Method and apparatus for high-pressure wafer processing and drying

    公开(公告)号:US20020026729A1

    公开(公告)日:2002-03-07

    申请号:US09924999

    申请日:2001-08-07

    Applicant: Semitool, Inc.

    Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

    System for processing a workpiece
    62.
    发明申请
    System for processing a workpiece 失效
    用于加工工件的系统

    公开(公告)号:US20020023717A1

    公开(公告)日:2002-02-28

    申请号:US09921845

    申请日:2001-08-02

    Applicant: SEMITOOL, INC.

    Abstract: An apparatus for processing a workpiece in a micro-environment includes a workpiece housing connected to a motor for rotation. The workpiece housing forms a substantially closed processing chamber where one or more processing fluids are distributed across at least one face of the workpiece by centrifugal force generated during rotation of the housing. Multiple housings may be vertically stacked and rotated about a common rotation axis to simultaneously process multiple workpieces in a small space.

    Abstract translation: 用于在微环境中处理工件的装置包括连接到用于旋转的电动机的工件壳体。 工件壳体形成基本封闭的处理室,其中一个或多个处理流体通过在壳体旋转期间产生的离心力分布在工件的至少一个面上。 多个壳体可以垂直堆叠并围绕公共旋转轴线旋转,以在小空间中同时处理多个工件。

    Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece
    64.
    发明申请
    Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece 失效
    用于在微电子工件上的高沉积速率焊料电镀的方法,化学和设备

    公开(公告)号:US20020000378A1

    公开(公告)日:2002-01-03

    申请号:US09884003

    申请日:2001-06-18

    Applicant: Semitool, Inc.

    CPC classification number: C25D3/30 C25D3/34 C25D7/123 C25D17/001

    Abstract: The present invention is directed to an improved electroplating method, chemistry, and apparatus for selectively depositing tin/lead solder bumps and other structures at a high deposition rate pursuant to manufacturing a microelectronic device from a workpiece, such as a semiconductor wafer. An apparatus for plating solder on a microelectronic workpiece in accordance with one aspect of the present invention comprises a reactor chamber containing an electroplating solution having free ions of tin and lead for plating onto the workpiece. A chemical delivery system is used to deliver the electroplating solution to the reactor chamber at a high flow rate. A workpiece support is used that includes a contact assembly for providing electroplating power to a surface at a side of the workpiece that is to be plated. The contact contacts the workpiece at a large plurality of discrete contact points that isolated from exposure to the electroplating solution. An anode, preferably a consumable anode, is spaced from the workpiece support within the reaction chamber and is in contact with the electroplating solution. In accordance with one embodiment the electroplating solution comprises a concentration of a lead compound, a concentration of a tin compound, water and methane sulfonic acid.

    Abstract translation: 本发明涉及一种改进的电镀方法,化学和装置,用于根据从诸如半导体晶片的工件制造微电子器件,以高沉积速率选择性地沉积锡/铅焊料凸块和其它结构。 根据本发明的一个方面的用于在微电子工件上电镀焊料的装置包括反应室,该反应室含有具有锡和铅的游离离子的电镀溶液,用于电镀到工件上。 化学输送系统用于以高流速将电镀溶液输送到反应室。 使用工件支撑件,其包括用于向要被电镀的工件的一侧的表面提供电镀功率的接触组件。 触点在与暴露于电镀溶液中分离的大量离散接触点处接触工件。 阳极,优选是可消耗阳极,与反应室内的工件支撑件间隔开并与电镀溶液接触。 根据一个实施例,电镀溶液包含铅化合物的浓度,锡化合物的浓度,水和甲烷磺酸。

    Methods for cleaning semiconductor surfaces
    65.
    发明申请
    Methods for cleaning semiconductor surfaces 审中-公开
    清洁半导体表面的方法

    公开(公告)号:US20010027799A1

    公开(公告)日:2001-10-11

    申请号:US09836059

    申请日:2001-04-16

    Applicant: Semitool, Inc.

    Inventor: Eric J. Bergman

    Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or, ozone. The processes can use centrifugal processing and spraying actions.

    Abstract translation: 本发明包括用于清洁晶片或其它半导体产品表面的方法。 使用被润湿到表面上的氧化溶液进行氧化。 氧化溶液可以包括水,臭氧,氯化氢,硫酸或过氧化氢中的一种或多种。 漂洗步骤除去氧化溶液并抑制进一步的活性​​。 此后,漂洗后的表面优选进行干燥步骤。 将表面暴露于氧化物去除蒸气以从其中除去半导体氧化物。 氧化物去除蒸气可以包括一种或多种:酸,例如卤化氢,例如氟化氢或氯化氢; 水; 异丙醇 或臭氧。 这些工艺可以使用离心加工和喷涂动作。

    Single semiconductor wafer processor
    67.
    发明申请
    Single semiconductor wafer processor 有权
    单个半导体晶圆处理器

    公开(公告)号:US20010020482A1

    公开(公告)日:2001-09-13

    申请号:US09859930

    申请日:2001-05-17

    Applicant: SEMITOOL, INC.

    CPC classification number: H01L21/67034 Y10S134/902

    Abstract: In a method of processing or drying a semiconductor wafer, the wafer is withdrawn from a fluid bath at an inclined angle, and at a selected withdrawal speed. A solvent vapor is provided at the surface of the bath, to create a surface tension gradient and promote drying, or removal of the fluid from the wafer surface. After the wafer is entirely withdrawn from the rinsing liquid, the wafer is rotated briefly, to remove any remaining fluid via centrifugal force, without the fluid drying on the wafer. The wafer is held onto a rotor assembly which rotates the wafer within an enclosed chamber, and which is also pivoted within the chamber, to position the wafer at the incline angle.

    Abstract translation: 在半导体晶片的处理或干燥的方法中,将晶片以倾斜角度从流体槽中以选定的退出速度取出。 在浴的表面处提供溶剂蒸气,以产生表面张力梯度并促进干燥或从晶片表面去除流体。 在晶片完全从冲洗液体中取出之后,晶片短暂旋转,通过离心力除去任何剩余的流体,而不会在晶片上流体干燥。 将晶片保持在转子组件上,转子组件使晶片在封闭的腔室内旋转,并且还在腔室内枢转,以便以倾斜角定位晶片。

    Wafer handling system
    68.
    发明申请
    Wafer handling system 有权
    晶圆处理系统

    公开(公告)号:US20010012481A1

    公开(公告)日:2001-08-09

    申请号:US09735154

    申请日:2000-12-12

    Applicant: Semitool, Inc.

    Inventor: Jeffry Davis

    Abstract: A semiconductor wafer processing system has a carrier including wafer slots. A process robot engages the carrier and installs the carrier into a rotor within a process chamber. The rotor has a tapered or stepped inside surface matching a tapered or stepped outside surface of the carrier . Wafer retainers on the carrier pivot to better secure wafers within the carrier.

    Abstract translation: 半导体晶片处理系统具有包括晶片槽的载体。 过程机器人接合载体并将载体安装在处理室内的转子中。 转子具有与载体的锥形或阶梯状外表面匹配的锥形或阶梯状内表面。 载体上的晶片固定器枢转以更好地将晶片保护在载体内。

    Vapor phase etching MEMS devices
    69.
    发明申请
    Vapor phase etching MEMS devices 有权
    气相蚀刻MEMS器件

    公开(公告)号:US20040259370A1

    公开(公告)日:2004-12-23

    申请号:US10464597

    申请日:2003-06-18

    Applicant: Semitool, Inc.

    Inventor: Eric J. Bergman

    CPC classification number: B81C1/0092 B81C1/00928 B81C2201/117 H01L21/6708

    Abstract: An etch release for a MEMS device on a substrate includes etching the substrate with an etchant vapor and a wetting vapor. A thermal bake of the MEMS device, after the etch release may be used to volatilize residues. A supercritical fluid may also be used to remove residual contaminants. The combination of the etchant vapor, such as HF, and the wetting vapor, such as an alcohol vapor, improves the uniformity of the etch undercut on the substrate.

    Abstract translation: 衬底上的MEMS器件的蚀刻释放包括用蚀刻剂蒸气和润湿蒸气蚀刻衬底。 在蚀刻释放之后,MEMS器件的热烘烤可用于挥发残留物。 也可以使用超临界流体来除去残留的污染物。 蚀刻剂蒸气(例如HF)和润湿蒸气(例如醇蒸汽)的组合改善了基板上蚀刻底切的均匀性。

    Semiconductor processing apparatus having lift and tilt mechanism
    70.
    发明申请
    Semiconductor processing apparatus having lift and tilt mechanism 失效
    具有升降机构的半导体处理装置

    公开(公告)号:US20040226510A1

    公开(公告)日:2004-11-18

    申请号:US10721057

    申请日:2003-11-24

    Applicant: Semitool. Inc.

    Abstract: A lift/tilt assembly for use in a semiconductor wafer processing device is set forth. The lift/tilt assembly includes a linear way comprising a fixed frame and a moveable frame. A nest for accepting a plurality of semiconductor wafers is rotatably connected to the moveable frame. The nest rotates between a wafer-horizontal orientation and a wafer-vertical orientation as it is driven with the movable frame by a motor that is coupled to the linear way. A lever connected to the nest provides an offset from true vertical for the nest when the nest is in the wafer-vertical orientation.

    Abstract translation: 阐述了用于半导体晶片处理装置的提升/倾斜组件。 提升/倾斜组件包括包括固定框架和可移动框架的线性方式。 用于接收多个半导体晶片的嵌座可旋转地连接到可移动框架。 当它由与可线性方式耦合的电动机用可移动框架驱动时,嵌套在晶片水平取向和晶片垂直取向之间旋转。 当嵌套处于晶片垂直方向时,连接到嵌套的杠杆提供与巢的真垂直的偏移。

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