摘要:
The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.
摘要:
This invention is related to thick film conductor compositions comprising electrically conductive gold powder, one or more glass frit or ceramic oxide compositions and an organic vehicle. It is further directed to the composition's uses for LTCC (low temperature co-fired ceramic) tape, for fabrication of multilayer electronic circuits and in high frequency microelectronic applications.
摘要:
This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired) laminates of three or more different dielectric tape chemistries that are configured in an uniquely or pseudo-symmetrical arrangement in the z-axis of the laminate.
摘要:
The present invention relates to a method to achieve the suppression of planar shrinkage in LTCC ceramic tape laminate structures without externally applied forces or sacrificial constraining tape. The method utilizes a non-sacrificial constraining tape that constrains a tape assembly.
摘要:
A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.
摘要:
The invention relates to a surface-modified RuO2 conductive and a lead-free powdered glass material formulated to make a paste suitable for application to the manufacture of a thick film resistor material. The resistance range that is most suitable to this invention is a resistor having 10 kilo-ohms to 10 mega-ohms per square of sheet resistance. The resulting resistors have ±100 ppm/° C. TCRs.
摘要:
A substantially lead-free thick-film resistor paste composition is disclosed including a resistor composition dispersed in an organic vehicle. The resistor composition includes (a) RuO2 conductive material; (b) an α-oxide selected from CuO, Na2O, K2O, Li2O and combinations thereof (c) a borosilicate glass composition having: (i) B2O3, (ii) SiO2, (iii) a δ-oxide selected from BaO, CaO, ZnO, SrO, MgO and combinations thereof, and optionally including any of (iv) P2O5, (v) ZrO2 and (vi) Al2O3. The CuO α-oxide and TiO2, Ta2O5, Nb2O5 β-oxide(s) and combinations thereof are present in the paste composition either separately, or in the borosilicate glass composition, or both. The Na2O, K2O, Li2O α-oxide(s) and combinations thereof are present in the borosilicate glass composition. TCR values in the range of +/−100 ppm/° C. and R values of 100 ohms to 10 mega-ohms per square are obtained by resistors made from the paste composition.
摘要翻译:公开了一种基本上无铅的厚膜电阻膏组合物,其包括分散在有机载体中的电阻组合物。 电阻组合物包括(a)RuO 2导电材料; (b)选自CuO,Na2O,K2O,Li2O及其组合的α-氧化物及其组合(c)硼硅酸盐玻璃组合物,其具有:(i)B 2 O 3,(ii)SiO 2,(iii)选自BaO, ,ZnO,SrO,MgO及其组合,并且任选地包括(iv)P 2 O 5,(v)ZrO 2和(vi)Al 2 O 3中的任何一种。 CuOα-氧化物和TiO 2,Ta 2 O 5,Nb 2 O 5和/或它们的组合分别存在于糊料组合物中或在硼硅酸盐玻璃组合物中,或两者均存在。 Na 2 O,K 2 O,Li 2 O的α-氧化物及其组合存在于硼硅酸盐玻璃组合物中。 通过由糊剂组合物制成的电阻器,可获得+/- 100ppm /℃范围内的TCR值和100欧姆至10兆欧每平方厘米的R值。
摘要:
The invention relates to the use of and method of forming Low Temperature Cofired Ceramic (LTCC) circuits for high frequency applications. Furthermore, the invention relates to the novel LTCC thick film compositions and the structure itself.
摘要:
A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li2RuO3 of diameter between 0.5 and 5 microns and a lead-free frit. The particles have had the lithium at or near primarily the surface of the particle at least partially exchanged for atoms of other metals.
摘要:
Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof.The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.