ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM
    61.
    发明申请
    ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM 审中-公开
    电极厚膜组合物(S),电极(S)及其形成的半导体器件(S)

    公开(公告)号:US20090140217A1

    公开(公告)日:2009-06-04

    申请号:US12366250

    申请日:2009-02-05

    IPC分类号: H01B1/22

    摘要: The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.

    摘要翻译: 本发明涉及一种导电厚膜组合物,其包含:(a)选自(1)Al,Cu,Au,Ag,Pd和Pt中的导电金属颗粒; (2)Al,Cu,Au,Ag,Pd和Pt的合金; 和(3)它们的混合物; (3)玻璃料,其中所述玻璃料是无铅的; 分散在(d)有机介质中,并且其中所述导电金属颗粒的平均直径在0.5-10.0μm的范围内。 本发明还涉及由上述组合物形成的电极和包括所述电极的半导体器件(例如,太阳能电池)。

    Process for the production of a MWT silicon solar cell
    65.
    发明授权
    Process for the production of a MWT silicon solar cell 有权
    生产MWT硅太阳能电池的工艺

    公开(公告)号:US09054242B2

    公开(公告)日:2015-06-09

    申请号:US13022799

    申请日:2011-02-08

    摘要: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

    摘要翻译: 一种用于生产MWT硅太阳能电池的方法,包括以下步骤:(1)提供n型硅晶片,其具有(i)在晶片的前侧和后侧之间形成通孔的孔,以及(ii) p型发射体在孔的整个前侧和内侧延伸,(2)将导电金属膏施加到硅晶片的孔中,至少提供孔的内部金属化,(3)干燥 施加的导电性金属糊料,(4)烧制干燥后的导电性金属糊料,由此晶片达到700〜900℃的峰值温度,其中导电性金属糊料没有或仅有差的穿透能力,并且包括(a )至少一种选自银,铜和镍的颗粒状导电金属,(b)至少一种颗粒型p型掺杂剂,和(c)有机载体。

    Lead-free resistive composition
    67.
    发明授权
    Lead-free resistive composition 有权
    无铅电阻组成

    公开(公告)号:US08257619B2

    公开(公告)日:2012-09-04

    申请号:US12425048

    申请日:2009-04-16

    IPC分类号: H01B1/20 C03C8/02 H01C7/00

    摘要: A substantially lead-free thick-film resistor paste composition is disclosed including a resistor composition dispersed in an organic vehicle. The resistor composition includes (a) RuO2 conductive material; (b) an α-oxide selected from CuO, Na2O, K2O, Li2O and combinations thereof (c) a borosilicate glass composition having: (i) B2O3, (ii) SiO2, (iii) a δ-oxide selected from BaO, CaO, ZnO, SrO, MgO and combinations thereof, and optionally including any of (iv) P2O5, (v) ZrO2 and (vi) Al2O3. The CuO α-oxide and TiO2, Ta2O5, Nb2O5 β-oxide(s) and combinations thereof are present in the paste composition either separately, or in the borosilicate glass composition, or both. The Na2O, K2O, Li2O α-oxide(s) and combinations thereof are present in the borosilicate glass composition. TCR values in the range of +/−100 ppm/° C. and R values of 100 ohms to 10 mega-ohms per square are obtained by resistors made from the paste composition.

    摘要翻译: 公开了一种基本上无铅的厚膜电阻膏组合物,其包括分散在有机载体中的电阻组合物。 电阻组合物包括(a)RuO 2导电材料; (b)选自CuO,Na2O,K2O,Li2O及其组合的α-氧化物及其组合(c)硼硅酸盐玻璃组合物,其具有:(i)B 2 O 3,(ii)SiO 2,(iii)选自BaO, ,ZnO,SrO,MgO及其组合,并且任选地包括(iv)P 2 O 5,(v)ZrO 2和(vi)Al 2 O 3中的任何一种。 CuOα-氧化物和TiO 2,Ta 2 O 5,Nb 2 O 5和/或它们的组合分别存在于糊料组合物中或在硼硅酸盐玻璃组合物中,或两者均存在。 Na 2 O,K 2 O,Li 2 O的α-氧化物及其组合存在于硼硅酸盐玻璃组合物中。 通过由糊剂组合物制成的电阻器,可获得+/- 100ppm /℃范围内的TCR值和100欧姆至10兆欧每平方厘米的R值。

    THICK FILM RESISTIVE HEATER COMPOSITIONS COMPRISING Ag & RuO2, AND METHODS OF MAKING SAME
    70.
    发明申请
    THICK FILM RESISTIVE HEATER COMPOSITIONS COMPRISING Ag & RuO2, AND METHODS OF MAKING SAME 有权
    包含Ag&RuO2的厚膜电阻加热组合物及其制造方法

    公开(公告)号:US20120164314A1

    公开(公告)日:2012-06-28

    申请号:US13292642

    申请日:2011-11-09

    IPC分类号: H01B1/16 B05D5/12

    摘要: Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof.The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.

    摘要翻译: 公开了厚膜电阻膏组合物和制备厚膜组合物的方法。 组合物包括分散在有机载体中的电阻组合物。 电阻组合物具有3至60重量%的RuO 2导电材料,5至75重量%的Ag导电材料,15至60重量%的玻璃料和任选的至多10重量%的氧化铜或其前体,以及最多20个 重量铋氧化物或其前体。 当印刷到干燥厚度并在750℃和950℃之间的温度下烧结时,电阻器组合物的电阻率达10至10,000毫欧/平方厘米,电阻率的热温度系数为1000ppm /℃或更高。 烧结的电阻组合物可以实现0.75至1.50之间的电阻厚度比(Rtr)值。