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    Methods of Forming Replacement Gate Structures for Semiconductor Devices
    69.
    发明申请
    Methods of Forming Replacement Gate Structures for Semiconductor Devices 审中-公开
    形成半导体器件的替代栅极结构的方法

    公开(公告)号：US20130187236A1

    公开(公告)日：2013-07-25

    申请号：US13354844

    申请日：2012-01-20

    申请人： Ruilong Xie ,  Xiuyu Cai ,  Robert Miller ,  Andreas Knorr

    发明人： Ruilong Xie ,  Xiuyu Cai ,  Robert Miller ,  Andreas Knorr

    IPC分类号： H01L27/092 ,  H01L21/28

    CPC分类号： H01L29/4966 ,  H01L21/82345 ,  H01L21/823456 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553

    摘要： Disclosed herein are methods of forming replacement gate structures. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gate structure to thereby define a gate cavity, forming a layer of insulating material in the gate cavity and forming a layer of metal within the gate cavity above the layer of insulating material. The method further includes forming a sacrificial material in the gate cavity so as to cover a portion of the layer of metal and thereby define an exposed portion of the layer of metal, performing an etching process on the exposed portion of the layer of metal to thereby remove the exposed portion of the layer of metal from within the gate cavity, and, after performing the etching process, removing the sacrificial material and forming a conductive material above the remaining portion of the layer of metal.

    摘要翻译： 这里公开了形成替换栅极结构的方法。 在一个示例中，该方法包括在半导体衬底之上形成牺牲栅极结构，去除牺牲栅极结构从而限定栅极腔，在栅极腔中形成绝缘材料层并在栅极腔内形成金属层 绝缘材料层。 该方法还包括在栅腔中形成牺牲材料以覆盖金属层的一部分，从而限定金属层的暴露部分，对金属层的暴露部分进行蚀刻工艺，由此 从栅极腔内去除金属层的暴露部分，并且在执行蚀刻工艺之后，去除牺牲材料并在金属层的剩余部分上方形成导电材料。