公开(公告)号：US20210358744A1

公开(公告)日：2021-11-18

申请号：US17391412

申请日：2021-08-02

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Srinivas Gandikota ,  Kelvin Chan ,  Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.

公开(公告)号：US20210305052A1

公开(公告)日：2021-09-30

申请号：US17347070

申请日：2021-06-14

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Jospeh Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/28 ,  C23C16/14 ,  C23C16/452 ,  C23C16/458

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US10741435B2

公开(公告)日：2020-08-11

申请号：US16393357

申请日：2019-04-24

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Kelvin Chan ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Pramit Manna

IPC: H01L21/32 ,  H01L21/762 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/43

Abstract: Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.

公开(公告)号：US10475642B2

公开(公告)日：2019-11-12

申请号：US15491331

申请日：2017-04-19

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Srinivas Gandikota ,  Kelvin Chan ,  Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L29/66 ,  C23C16/455 ,  C23C16/40 ,  H01L29/78 ,  H01L29/51

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.

公开(公告)号：US10410869B2

公开(公告)日：2019-09-10

申请号：US15633366

申请日：2017-06-26

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Kelvin Chan ,  Hien Minh Le ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Karthik Janakiraman

IPC: C23C16/06 ,  H01L21/3205 ,  C23C16/505 ,  H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  C23C16/02 ,  C23C16/40 ,  C23C28/00 ,  H01L27/11582

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US20190259652A1

公开(公告)日：2019-08-22

申请号：US16393357

申请日：2019-04-24

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Kelvin Chan ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Pramit Manna

IPC: H01L21/762 ,  H01L29/43 ,  H01L21/28 ,  H01L21/32 ,  H01L21/8234

Abstract: Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.

公开(公告)号：US10002757B2

公开(公告)日：2018-06-19

申请号：US15656045

申请日：2017-07-21

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Shaunak Mukherjee ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/455 ,  H01L23/532 ,  H01L21/3105 ,  H01L21/033

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

公开(公告)号：US20170114453A1

公开(公告)日：2017-04-27

申请号：US15297257

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Rui Cheng ,  Pramit Manna ,  Kelvin Chan ,  Karthik Janakiraman ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: C23C16/24 ,  C23C16/455

CPC classification number: C23C16/24 ,  C23C16/04 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/4584

Abstract: Methods for depositing film comprising cyclical exposure of a substrate surface to a precursor and a degas environment to remove gas evolved from the film. Some embodiments further comprise the incorporation poisoning the top of a feature to inhibit film growth at the top of the feature. Some embodiments further comprising etching a portion of the film deposited at the top of a feature between cycles to increase gap-fill uniformity.

公开(公告)号：US09508545B2

公开(公告)日：2016-11-29

申请号：US14984599

申请日：2015-12-30

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Shaunak Mukherjee ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

Abstract translation: 本文公开的实施方式通常涉及形成氧化硅膜的方法。 所述方法可以包括在具有末端羟基的基材的表面上进行甲硅烷基化。 然后使用等离子体和H 2 O浸泡再生衬底表面上的羟基以进行另外的甲硅烷基化。 其它方法包括使用路易斯酸催化暴露的表面，定向灭活暴露的第一和第二表面以及在侧壁表面上沉积含硅层。 可以进行多次等离子体处理以沉积具有所需厚度的层。

公开(公告)号：US09364871B2

公开(公告)日：2016-06-14

申请号：US13970176

申请日：2013-08-19

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Alexandros T. Demos ,  Kelvin Chan ,  Juan Carlos Rocha-Alvarez ,  Scott A. Hendrickson ,  Abhijit Kangude ,  Inna Turevsky ,  Mahendra Chhabra ,  Thomas Nowak ,  Daping Yao ,  Bo Xie ,  Daemian Raj

IPC: C23C16/455 ,  B08B7/00 ,  C11D11/00 ,  C23C16/44 ,  C23C16/48

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。