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105 条记录 (耗时 0.035 秒)

    Causing relative motion
    62.
    发明授权
    Causing relative motion 有权
    造成相对运动

    公开(公告)号：US08263955B2

    公开(公告)日：2012-09-11

    申请号：US12337796

    申请日：2008-12-18

    申请人： Peter Kiesel ,  Markus Beck ,  Michael Bassler ,  Noble M. Johnson

    发明人： Peter Kiesel ,  Markus Beck ,  Michael Bassler ,  Noble M. Johnson

    IPC分类号： G01N21/55 ,  G01N21/25 ,  G01N21/00

    CPC分类号： G01N15/1429 ,  G01N15/1459 ,  G01N21/532 ,  G01N21/645 ,  G01N21/65 ,  G01N2015/1075

    摘要： Sensors can be used to obtain encoded sensing results from objects that have nonuniform relative motion. A photosensor or impedance-based sensor, for example, can obtain sensing results from objects that have relative motion within a sensing region relative to the sensor, with the relative motion being, for example, periodically varying, randomly varying, chirp-varying, or modulated relative motion that completes at least one modulation cycle within the sensing region. Relative motion can be caused by varying objects' speed and/or direction or by controlling flow of fluid carrying objects, movement of a channel, movement of a support structure, movement of a sensor, and/or pattern movement. A fluidic implementation can include shaped channel wall parts and/or a displacement component causing time-varying lateral displacement. A support structure implementation can include a scanner device and a rotary device that respectively control scanning and rotating movement of a movable support structure or of a sensor.

    摘要翻译： 传感器可用于从具有不均匀相对运动的物体获得编码的感测结果。 例如，光传感器或基于阻抗的传感器可以从相对于传感器的感测区域内具有相对运动的物体获得感测结果，相对运动例如是周期性变化的，随机变化的线性调频脉冲变化或 调制的相对运动，其在感测区域内完成至少一个调制周期。 可以通过改变物体的速度和/或方向或通过控制流体携带物体的流动，通道的移动，支撑结构的运动，传感器的运动和/或图案运动来引起相对运动。 流体实现可以包括形成通道壁部分和/或引起时变横向位移的位移部件。 支撑结构实现可以包括分别控制可移动支撑结构或传感器的扫描和旋转运动的扫描器装置和旋转装置。

    Obtaining sensing results and/or data in response to object detection
    63.
    发明授权
    Obtaining sensing results and/or data in response to object detection 有权
    获取响应于物体检测的感测结果和/或数据

    公开(公告)号：US08153950B2

    公开(公告)日：2012-04-10

    申请号：US12337771

    申请日：2008-12-18

    申请人： Peter Kiesel ,  Markus Beck ,  Joerg Martini ,  Michael Bassler ,  Noble M. Johnson

    发明人： Peter Kiesel ,  Markus Beck ,  Joerg Martini ,  Michael Bassler ,  Noble M. Johnson

    IPC分类号： G01J1/42 ,  F21V9/16 ,  G01N21/25

    CPC分类号： G01J3/2803 ,  G01J3/02 ,  G01J3/027 ,  G01N15/12 ,  G01N15/1429 ,  G01N15/1459 ,  G01N2015/1075 ,  G01N2021/1734

    摘要： An encoder/sensor can obtain sensing results from objects in an encoding/sensing region; a trigger detector can respond to objects in a trigger detection region, providing respective trigger signals; and a relative motion component can cause relative motion of objects into the trigger detection region, from it into the encoding/sensing region, and within the encoding/sensing region. In response to an object's trigger signal, control circuitry can cause the encoder/sensor and/or the relative motion component to operate so that the encoder/sensor obtains sensing results indicating a time-varying waveform and processing circuitry can obtain data from the sensing results indicating a time-varying waveform. The time-varying waveform can include information resulting from the relative motion within the encoding/sensing region. The encoder/sensor and trigger detector can be implemented, for example, with discrete components or as sets of cells in a photosensing array on an integrated circuit.

    摘要翻译： 编码器/传感器可以从编码/感测区域中的对象获得感测结果; 触发检测器可以响应触发检测区域中的对象，提供相应的触发信号; 并且相对运动分量可以引起物体进入触发检测区域的相对运动，从而进入编码/感测区域，并且在编码/感测区域内。 响应于物体的触发信号，控制电路可以使编码器/传感器和/或相对运动分量运行，使得编码器/传感器获得指示时变波形的感测结果，并且处理电路可以从感测结果获得数据 表示时变波形。 时变波形可以包括由编码/感测区域内的相对运动产生的信息。 编码器/传感器和触发检测器可以例如利用集成电路中的光敏阵列中的分立组件或单元组来实现。

    Fabrication of quantum confinement semiconductor light-emitting devices
    68.
    发明授权
    Fabrication of quantum confinement semiconductor light-emitting devices 失效
    量子限制半导体发光器件的制造

    公开(公告)号：US5607876A

    公开(公告)日：1997-03-04

    申请号：US581287

    申请日：1995-12-29

    申请人： David K. Biegelsen ,  Nicholas K. Sheridon ,  Noble M. Johnson

    发明人： David K. Biegelsen ,  Nicholas K. Sheridon ,  Noble M. Johnson

    IPC分类号： H01L33/06 ,  H01L33/08 ,  H01L33/34 ,  H01L21/20

    CPC分类号： H01L33/346 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/08 ,  Y10S438/962

    摘要： The present invention consists of an electroluminescent structure and method of fabrication of that structure in materials which have an indirect bandgap in their bulk form. The processing steps can all be standard VLSI methods. Quantum columns, quantum wires or quantum dots may be formed, for example in an array, by masking, reactive ion etching and oxidation. When the semiconductor core is sufficiently thin, quantum mechanical confinement effects raise the energy and the radiative recombination efficiency of injected carriers. Tuning the core diameters allows selection of individual or multiple wavelength emission bands.

    摘要翻译： 本发明包括一种电致发光结构和在其体积形式具有间接带隙的材料中制造该结构的方法。 处理步骤都可以是标准的VLSI方法。 量子列，量子线或量子点可以例如通过掩模，反应离子蚀刻和氧化形成阵列。 当半导体芯足够薄时，量子力学限制效应提高了注入载体的能量和辐射复合效率。 调整核心直径允许选择单个或多个波长发射波段。

    Selective disordering of well structures by laser annealing
    69.
    发明授权
    Selective disordering of well structures by laser annealing 失效
    通过激光退火对阱结构进行选择性排列

    公开(公告)号：US4654090A

    公开(公告)日：1987-03-31

    申请号：US775979

    申请日：1985-09-13

    申请人： Robert D. Burnham ,  Noble M. Johnson

    发明人： Robert D. Burnham ,  Noble M. Johnson

    IPC分类号： H01L21/18 ,  H01L21/268 ,  H01S5/34 ,  H01L21/265 ,  H01L21/203

    CPC分类号： B82Y20/00 ,  H01L21/182 ,  H01L21/268 ,  H01S5/34 ,  Y10S148/084 ,  Y10S148/094

    摘要： A method of converting selected areas of a semiconductor structure into a disordered alloy comprising a well feature epitaxially deposited on a semiconductor support, the well feature comprising at least one first well layer of narrow bandgap material deposited adjacent to at least a second layer of wider bandgap material or interposed between second and third layers of wider bandgap material. The disordered alloy exhibits higher bandgap and lower refractive index properties than the first layer. The method comprises the steps of (1) either placing the structure within a protective environment to prevent the escape of volatile components from the structure during subsequent processing or alternatively, covering the structure with a protective coating to prevent the escape of any elemental component of the structure, (2) heating the structure to a background temperature just below the temperature required to achieve rapid thermal disordering of the well feature, (3) scanning the structure with a laser beam while maintaining the applied heat to selectively disorder the well feature due to the additional heat supplied by the laser beam forming a pattern of wider bandgap and lower refractive index properties prescribed in the feature by the scanning trace of the laser beam compared to areas of the feature not scanned by the laser beam. The well feature may be a quantum well structure comprising a single quantum well structure, a multiple quantum well structure or a separate confinement single quantum well or a separate confinement multiple quantum well or a heterostructure including an active region being the first layer.

    摘要翻译： 一种将半导体结构的选定区域转换为包含外延沉积在半导体支撑体上的阱特征的无序合金的方法，所述阱特征包括至少一个第一阱层，所述第一阱层与至少第二层较宽带隙相邻沉积的窄带隙材料沉积 材料或介于第二和第三层宽带隙材料之间。 无序合金表现出比第一层更高的带隙和更低的折射率特性。 该方法包括以下步骤：（1）将结构放置在保护环境内以防止挥发性组分在随后的加工过程中从结构中逸出，或者用保护涂层覆盖结构以防止任何元素的逸出 结构，（2）将结构加热到恰好低于实现阱特征的快速热排列所需的温度的背景温度，（3）用激光束扫描结构，同时保持所施加的热量以选择性地使井的特征失调由于 激光束提供的额外的热量与未被激光束扫描的特征区域相比，通过激光束的扫描轨迹形成特征中规定的较宽带隙和较低折射率特性的图案。 阱特征可以是量子阱结构，其包括单量子阱结构，多量子阱结构或单独约束单量子阱或分离的约束多量子阱或包括作为第一层的有源区的异质结构。