公开(公告)号：US06656779B1

公开(公告)日：2003-12-02

申请号：US09406793

申请日：1999-09-28

申请人： Kenji Kasahara

发明人： Kenji Kasahara

IPC分类号： H01L2100

CPC分类号： H01L29/4908 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621

摘要： A semiconductor device comprises a first insulating film provided over a substrate and heat-treated, a second insulating film provided over the first insulating film, and a semiconductor film provided over the second insulating film, the second insulating film and the semiconductor film being formed successively without exposing them to the atmosphere.

摘要翻译： 半导体器件包括：设置在基板上并进行热处理的第一绝缘膜，设置在第一绝缘膜上的第二绝缘膜;以及设置在第二绝缘膜上的半导体膜，第二绝缘膜和半导体膜，依次形成 而不会让他们暴露在大气中。

公开(公告)号：US08541844B2

公开(公告)日：2013-09-24

申请号：US13172398

申请日：2011-06-29

申请人： Hidehito Kitakado ,  Ritsuko Kawasaki ,  Kenji Kasahara

发明人： Hidehito Kitakado ,  Ritsuko Kawasaki ,  Kenji Kasahara

IPC分类号： H01L21/00

CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633

摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

公开(公告)号：US08085105B2

公开(公告)日：2011-12-27

申请号：US12618315

申请日：2009-11-13

申请人： Kenji Kasahara

发明人： Kenji Kasahara

IPC分类号： H03L1/00

CPC分类号： H03B1/02 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H03L1/023 ,  H03L1/028 ,  H03L1/04 ,  H05K1/0201 ,  H05K1/0212 ,  H05K1/181 ,  H05K2201/10022 ,  H05K2201/10075 ,  H05K2201/10151 ,  H05K2203/165 ,  H01L2224/0401

摘要： A constant-temperature type crystal oscillator includes: a crystal unit including a case main body including a first power source terminal on an outer bottom surface thereof; a surface-mounted oscillator; a temperature control circuit including a heating resistor and a temperature sensor; and a circuit substrate including a second power source terminal. One ends of the heating resistor and the temperature sensor are electrically connected to the second power source terminal. The first power source terminal of the surface-mounted oscillator and the one ends of the heating resistor and the temperature sensor are electrically connected to the second power source terminal of the circuit substrate. The first power source terminal of the surface-mounted oscillator is directly and electrically connected to, at least, the one end of the temperature sensor via an electrically-conducting path.

摘要翻译： 恒温型晶体振荡器包括：晶体单元，包括壳主体，其在其外底表面上包括第一电源端子; 表面安装的振荡器; 温度控制电路，包括加热电阻器和温度传感器; 以及包括第二电源端子的电路基板。 加热电阻器和温度传感器的一端电连接到第二电源端子。 表面安装的振荡器的第一电源端子和加热电阻器的一端和温度传感器电连接到电路基板的第二电源端子。 表面安装振荡器的第一电源端子至少通过导电路径电连接到温度传感器的一端。

公开(公告)号：US07998845B2

公开(公告)日：2011-08-16

申请号：US11785633

申请日：2007-04-19

申请人： Kenji Kasahara ,  Shunpei Yamazaki

发明人： Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L21/20

CPC分类号： H01L27/1277 ,  G02F1/13454 ,  H01L27/1296 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78684

摘要： To provide a semiconductor device in which a semiconductor film having a leveled main surface is used as an active layer. A semiconductor film (5) having the leveled main surface with an rms of less than 10 nm and a P-V value of less than 70 nm which each indicate a surface roughness is formed by crystallizing a silicon film (3) containing germanium in a concentration of several %, preferably 0.1 to 10 atoms % and irradiating the film with a laser light. In a case of performing a crystallization by use of a metal element for accelerating the crystallization. The semiconductor film high in an orientation rate of the crystal as well as in levelness is obtained.

摘要翻译： 提供一种半导体器件，其中使用具有调平主表面的半导体膜作为有源层。 通过使包含锗的硅膜（3）的结晶浓度为1μm以下，形成具有小于10nm的均匀分布的主表面和小于70nm的PV值的半导体膜（5），其各自表示表面粗糙度 几个％，优选为0.1〜10原子％，并用激光照射薄膜。 在通过使用用于加速结晶的金属元素进行结晶的情况下。 获得晶体取向率高，水平度高的半导体膜。

公开(公告)号：US20110193637A1

公开(公告)日：2011-08-11

申请号：US12931300

申请日：2011-01-28

申请人： Kenji Kasahara

发明人： Kenji Kasahara

IPC分类号： H03B1/00 ,  H03L1/00

CPC分类号： H03H9/0552 ,  H03H9/02102 ,  H03H9/0542 ,  H03H9/1021 ,  H03H9/105

摘要： The invention relates to an oven controlled crystal oscillator for surface mounting with reduced height (low profile). The oven controlled crystal oscillator for surface mounting comprises: a flat first substrate made of ceramic and on which are installed a crystal device and a heat resistor; and a second substrate made of a glass epoxy resin which is quadrangular in plan view and which faces the first substrate and has a larger external shape in plan view than the first substrate. The second substrate has an opening into whose center the crystal device is inserted, and has terminal sections on four locations corresponding to the surface outer periphery of the first substrate and the peripheral surfaces of the opening in the second substrate, and the terminal sections of the first substrate and second substrate are connected by solder. A front end side head section of the crystal device inserted into the opening section of the second substrate is positioned inside the open surface of the opening section, and from terminal sections provided at four locations on the second substrate, conductive paths extend via the outside surface of the second substrate to external terminals formed on the outside bottom surface of the second substrate.

摘要翻译： 本发明涉及一种用于表面安装的烤箱控制晶体振荡器，其具有降低的高度（低轮廓）。 用于表面安装的烤箱控制晶体振荡器包括：由陶瓷制成的平坦的第一基板，其上安装有晶体装置和热电阻器; 以及由玻璃环氧树脂制成的第二基板，其平面图为四边形，面向第一基板，在平面视图中具有比第一基板更大的外形。 第二基板具有插入其晶体装置的中心的开口，并且在与第一基板的表面外周对应的四个位置和第二基板的开口的外周面上具有端子部， 第一基板和第二基板通过焊料连接。 插入第二基板的开口部的晶体装置的前端侧头部位于开口部的开口部的内侧，并且设置在第二基板的四个位置的端子部分，导电路径经由外表面 的第二基板连接到形成在第二基板的外侧底面上的外部端子。

公开(公告)号：US20100127784A1

公开(公告)日：2010-05-27

申请号：US12591188

申请日：2009-11-12

申请人： Kenji Kasahara

发明人： Kenji Kasahara

IPC分类号： H03B1/00

CPC分类号： H03L1/04 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/00

摘要： A low-price, compact oscillating device having a good temperature characteristic of a frequency intermediate between a temperature compensated crystal oscillator (TCXO) and an oven-controlled crystal oscillator (OCXO) is provided. The oscillating device having a TCXO is provided with a base on which the TCXO is mounted, that is formed into a box shape having a recess, with a plane area substantially equal to that of the TCXO; and a semiconductor chip including a temperature control circuit, a temperature sensor, and a heating element, mounted in the recess. An opening of the recess is provided in a surface opposite a surface in which the temperature compensated crystal oscillator is mounted, and sealed by a cover. A temperature of the TCXO can be kept constant to provide a oscillating device having an excellent temperature characteristic of a frequency compared with the single TCXO.

摘要翻译： 提供了具有温度补偿晶体振荡器（TCXO）和炉控晶体振荡器（OCXO）之间的中间频率的良好温度特性的低价格，紧凑的振荡器件。 具有TCXO的振荡装置设置有安装有TCXO的基座，其形成为具有与TCXO的平面面积大致相等的凹部的箱形; 以及安装在凹部中的包括温度控制电路，温度传感器和加热元件的半导体芯片。 在安装温度补偿晶体振荡器的表面相对的表面上设置凹部的开口，并且被盖封闭。 TCXO的温度可以保持恒定，以提供与单个TCXO相比具有优异的频率温度特性的振荡器件。

公开(公告)号：US07679131B1

公开(公告)日：2010-03-16

申请号：US09651889

申请日：2000-08-30

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L29/94

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/1274

摘要： A laser annealing method for obtaining a crystalline semiconductor film having a large grain size, and a method of manufacturing a semiconductor device using the crystalline semiconductor film, are provided. Using a shape change (convex portion or concave portion) of an amorphous semiconductor film when crystallizing the amorphous semiconductor film using irradiation of laser light, it is possible to intentionally regulate the origin of crystal growth, and to make the grain size large. By then designing the arrangement of an active layer (island shape semiconductor film) so as to contain at least a channel forming region within one grain, it becomes possible to improve the electrical characteristics of a TFT.

摘要翻译： 提供了用于获得具有大晶粒尺寸的晶体半导体膜的激光退火方法，以及使用该晶体半导体膜制造半导体器件的方法。 使用激光的照射使非晶半导体膜结晶时，使用非晶半导体膜的形状变化（凸部或凹部），有可能有意调节晶体生长的起因，并使晶粒尺寸变大。 然后，通过设计有源层（岛状半导体膜）的布置，以便至少在一个晶粒内容纳沟道形成区域，可以改善TFT的电特性。

公开(公告)号：US07670935B2

公开(公告)日：2010-03-02

申请号：US11354885

申请日：2006-02-16

申请人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L23/544 ,  H01L27/1285 ,  H01L29/42384 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.

摘要翻译： 在激光照射之前形成岛状半导体膜和标记。 标记用作位置参考，以便不在衬底表面内的整个半导体上执行激光照射，而是在至少不可缺少的部分上进行最小结晶。 由于可以减少激光结晶所需的时间，可以提高基板处理速度。 通过将上述结构应用于传统的SLS方法，提供了一种用于在传统SLS方法中解决这种问题的方法，即基板处理效率不足。

公开(公告)号：US07645625B2

公开(公告)日：2010-01-12

申请号：US12294963

申请日：2007-03-30

申请人： Yoshinobu Ono ,  Kenji Kasahara ,  Kazumasa Ueda

发明人： Yoshinobu Ono ,  Kenji Kasahara ,  Kazumasa Ueda

IPC分类号： H01L21/00

CPC分类号： H01L21/30608 ,  H01L21/308 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L2933/0083 ,  Y10S977/856

摘要： The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching.

摘要翻译： 本发明提供了一种基板的精细加工方法，基板的制造方法以及发光装置。 在基板精细加工方法中，在从具有单一颗粒层的基板除去单个颗粒层之后，具有内径小于颗粒直径的孔并且以基体上的每个颗粒构成的位置为中心 已经放置的单个颗粒层通过蚀刻形成。

公开(公告)号：US07514852B2

公开(公告)日：2009-04-07

申请号：US11472197

申请日：2006-06-21

申请人： Kenji Kasahara ,  Takeshi Uchida

发明人： Kenji Kasahara ,  Takeshi Uchida

IPC分类号： H01L41/08

CPC分类号： H03H9/08 ,  H03H9/0514 ,  H03H9/0542 ,  H03H9/0552 ,  H03H9/1014

摘要： A piezooscillator having a piezoelectric vibrator and an oscillation circuit in a space surrounded by a substrate and a cover, which has a smaller size and height, and further, which can be assembled easily and suppress power consumption, is provided. The piezooscillator includes a recessed portion formed on the surface of the substrate; a supporting member supporting the piezoelectric vibrator while the piezoelectric vibrator is in a state partially or entirely accommodated in the recessed portion and floating from the substrate; a heating element provided on the surface of the piezoelectric vibrator; a temperature sensitive element provided in the space; and a temperature control unit provided in the space and controlling power supply to said heating element based on an output of the temperature sensitive element, in which, it is possible to reduce capacity of the space accommodating the piezoelectric vibrator and the heating element by eliminating the need of an additional substrate provided above the substrate as in conventional piezoelectric vibrators, so that the size and height of the piezooscillator can be reduced, in which assembling is eased, and power consumption can be reduced on the back of suppressed heat release to the substrate.

摘要翻译： 提供一种具有压电振动器和振荡电路的振荡电路，该振荡电路由包括基板和盖的空间中，其具有较小的尺寸和高度，并且还可以容易地组装并抑制功率消耗。 所述压电振荡器包括形成在所述基板的表面上的凹部; 支撑构件，其支撑压电振动器，同时压电振动器处于部分或全部容纳在凹部中并从衬底浮动的状态; 设置在所述压电振动器的表面上的加热元件; 设置在该空间中的温度敏感元件; 以及温度控制单元，其设置在所述空间中，并且基于所述温度敏感元件的输出来控制对所述加热元件的电力供给，其中可以通过消除所述温度敏感元件的输出来减小容纳所述压电振动器和所述加热元件的空间的容量 需要在传统的压电振动器中设置在衬底上方的附加衬底，使得可以减少压电振荡器的尺寸和高度，其中组装被减轻，并且在抑制的释放到衬底的背面上可以降低功耗 。