公开(公告)号：US06277200B1

公开(公告)日：2001-08-21

申请号：US09728718

申请日：2000-11-30

申请人： Li-Qun Xia ,  Ellie Yieh

发明人： Li-Qun Xia ,  Ellie Yieh

IPC分类号： C23C1600

摘要： A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.

公开(公告)号：US06177344B1

公开(公告)日：2001-01-23

申请号：US09199911

申请日：1998-11-25

申请人： Li-Qun Xia ,  Richard A. Conti ,  Maria Galiano ,  Ellie Yieh

发明人： Li-Qun Xia ,  Richard A. Conti ,  Maria Galiano ,  Ellie Yieh

IPC分类号： H01L214763

CPC分类号： H01L21/31051 ,  H01L21/3105 ,  H01L21/31625

摘要： A multistep method for planarizing a silicon oxide insulating layer such as a deposited borophosphosilicate glass (BPSG) layer. The method includes several different planarization stages. During an initial, pre-planarization stage, a substrate having a BPSG layer deposited over it is loaded into a substrate processing chamber. Then, during a first planarization stage after the pre-planarization stage, oxygen and hydrogen are flowed into the substrate processing chamber to form a steam ambient in said chamber and the substrate is heated in the steam ambient from a first temperature to a second temperature. The first temperature is below a reflow temperature of the BPSG layer and the second temperature is sufficient to reflow the layer. After the substrate is heated to the second temperature during a second planarization stage, the temperature of the substrate and the conditions within the substrate processing chamber are maintained at conditions sufficient to reflow the BPSG layer in the steam ambient. In a more preferred embodiment, the multistep planarization method also includes a third planarization stage, after the second stage. In the third planarization stage, the flow of hydrogen is stopped while the flow of oxygen is maintained, thereby forming an oxygen ambient in the substrate processing chamber. The substrate temperature is maintained in the oxygen ambient at a temperature above the reflow temperature of the BPSG layer. It is believed that this additional step minimizes the amount of moisture incorporated into the reflowed BPSG layer.

摘要翻译： 一种用于平坦化氧化硅绝缘层例如沉积的硼磷硅酸盐玻璃（BPSG）层的多步法。 该方法包括几个不同的平坦化阶段。 在初始预平坦化阶段期间，在其上沉积有BPSG层的衬底被加载到衬底处理室中。 然后，在预平坦化阶段之后的第一平坦化阶段期间，氧气和氢气流入基板处理室以在所述室中形成蒸汽环境，并且基板在蒸汽环境中从第一温度加热到第二温度。 第一温度低于BPSG层的回流温度，第二温度足以使该层回流。 在第二平坦化阶段将衬底加热到​​第二温度之后，衬底的温度和衬底处理室内的条件保持在足以在蒸汽环境中回流BPSG层的条件。 在更优选的实施例中，多级平面化方法还包括在第二级之后的第三平坦化级。 在第三平坦化阶段，在保持氧气流的同时停止氢的流动，从而在衬底处理室中形成氧环境。 在超过BPSG层的回流温度的温度下，将基板温度保持在氧环境中。 据信这个附加步骤使并入回流的BPSG层中的水分量最小化。

公开(公告)号：US07151053B2

公开(公告)日：2006-12-19

申请号：US11118678

申请日：2005-04-28

申请人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

发明人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC分类号： H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

摘要翻译： 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

公开(公告)号：US20050158667A1

公开(公告)日：2005-07-21

申请号：US10761122

申请日：2004-01-20

申请人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul Naik ,  Li-Qun Xia ,  Ellie Yieh

发明人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul Naik ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： G03F7/00 ,  G03F7/36 ,  G03F7/42 ,  H01L21/02 ,  H01L21/311

CPC分类号： G03F7/427 ,  H01L21/02063 ,  H01L21/31138

摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

摘要翻译： 可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。 该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

公开(公告)号：US06680164B2

公开(公告)日：2004-01-20

申请号：US10006563

申请日：2001-11-30

申请人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul B. Naik ,  Li-Qun Xia ,  Ellie Yieh

发明人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul B. Naik ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： G03F742

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01L21/31138

摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

摘要翻译： 可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。 该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

公开(公告)号：US06569257B1

公开(公告)日：2003-05-27

申请号：US09710357

申请日：2000-11-09

申请人： Huong Thanh Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Ellie Yieh

发明人： Huong Thanh Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： B08B300

CPC分类号： H01J37/32862 ,  C23C16/4405

摘要： A method for cleaning silicon carbide and/or organosilicate layers from interior surfaces of a process chamber is disclosed. In one aspect, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of a process chamber by treating it with a hydrogen/fluorine-based plasma. In another aspect, silicon carbide and/or organosilicate layer are cleaned from interior surfaces of the process chamber by treating it with a hydrogen-based plasma followed by a fluorine-based plasma. Alternatively, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of the chamber by treating it with a fluorine-based plasma followed by a hydrogen-based plasma.

摘要翻译： 公开了一种从处理室的内表面清洁碳化硅和/或有机硅酸盐层的方法。 在一个方面，通过用氢/氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。 另一方面，通过用基于氢的等离子体处理它，随后用氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。 或者，通过用氟基等离子体处理，然后用氢基等离子体来清洗碳化硅和/或有机硅酸盐层，从室的内表面清洗。

公开(公告)号：US06261975B1

公开(公告)日：2001-07-17

申请号：US09262782

申请日：1999-03-04

申请人： Li-Qun Xia ,  Francimar Campana ,  Ellie Yieh

发明人： Li-Qun Xia ,  Francimar Campana ,  Ellie Yieh

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31051 ,  H01L21/31625 ,  H01L21/31629

摘要： A method for improving the reflow characteristics of a BPSG film. According to the method, a fluorine- or other halogen-doped BPSG layer is deposited over a substrate and reflowed using a rapid thermal pulse (RTP) method. The use of such an RTP reflow method results in superior reflow characteristics as compared to a 20-40 minute conventional furnace reflow process. The inventors discovered that reflowing FBPSG films in a conventional furnace may result in the highly mobile fluorine atoms diffusing from the film prior to completion of the anneal. Thus, the FBPSG layer loses the improved reflow characteristics provided by the incorporation of fluorine into the film. The RTP reflow reflows the film in a minimal amount of time (e.g., 10-90 seconds depending on the temperature used to reflow the layer and the degree of planarization required among other factors). Thus, the fluorine atoms within the FBPSG layer do not have sufficient time to migrate from the layer even if the layer is deposited over a PETEOS oxide or similar layer.

摘要翻译： 一种改善BPSG膜的回流特性的方法。 根据该方法，将氟或其它卤素掺杂的BPSG层沉积在衬底上并使用快速热脉冲（RTP）方法回流。 与20-40分钟的常规炉回流工艺相比，使用这种RTP回流方法导致优异的回流特性。 本发明人发现，在常规炉中回流FBPSG膜可能导致高度可移动的氟原子在退火完成之前从膜扩散。 因此，FBPSG层失去了通过将氟结合到膜中而提供的改进的回流特性。 RTP回流以最小的时间（例如10-90秒，取决于用于回流层的温度和其他因素所需的平坦化程度）来回流薄膜。 因此，即使该层沉积在PETEOS氧化物或类似层上，FBPSG层内的氟原子也不具有从该层迁移的足够时间。

公开(公告)号：US6153261A

公开(公告)日：2000-11-28

申请号：US322709

申请日：1999-05-28

申请人： Li-Qun Xia ,  Ellie Yieh

发明人： Li-Qun Xia ,  Ellie Yieh

IPC分类号： C23C16/34 ,  C23C16/40 ,  C23C16/52 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C16/30

CPC分类号： H01L21/0214 ,  C23C16/345 ,  C23C16/402 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/3122

摘要： A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.

摘要翻译： 一种用于提高沉积在基底上的介电膜在给定温度下的沉积速率的方法和装置，同时提供良好的阶梯覆盖和间隙填充性能。 这通过使用二乙基丁基胺硅作为硅源与氧化剂反应以在包括硅的衬底上形成电介质膜来实现。

公开(公告)号：US5935340A

公开(公告)日：1999-08-10

申请号：US747892

申请日：1996-11-13

申请人： Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

发明人： Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

IPC分类号： B08B7/00 ,  C23C16/44 ,  H01L21/00 ,  B08B6/00

CPC分类号： H01L21/67017 ,  B08B7/0035 ,  C23C16/4405

摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

摘要翻译： 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高纵横比器件的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US20170069488A1

公开(公告)日：2017-03-09

申请号：US15356475

申请日：2016-11-18

申请人： Ellie Yieh ,  Ludovic Godet ,  Srinivas Nemani ,  Er-Xuan Ping ,  Gary Dickerson

发明人： Ellie Yieh ,  Ludovic Godet ,  Srinivas Nemani ,  Er-Xuan Ping ,  Gary Dickerson

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/3213 ,  C23C14/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  H01J37/32 ,  C23C16/50 ,  H01L21/311 ,  C23C14/04

CPC分类号： H01L21/02271 ,  C23C14/021 ,  C23C14/046 ,  C23C16/0227 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67213 ,  H01L21/76224

摘要： Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.

摘要翻译： 实施例包括3D结构填充的方法和系统。 在一个实施例中，在晶片中填充沟槽的方法包括使用离子束相对于沟槽的侧壁以一定角度执行定向等离子体处理，以形成侧壁的处理部分和沟槽的未处理底部。 材料沉积在沟槽中。 材料在侧壁的处理部分上的沉积速率不同于沟槽的未处理底部上的第二沉积速率。 在一个实施例中，一种方法包括在晶片上沉积材料，填充沟槽的底部并在沟槽的侧壁上形成层，以及邻近沟槽的顶表面。 该方法包括用相对于侧壁成一定角度的离子束蚀刻该层。