公开(公告)号：US06434008B1

公开(公告)日：2002-08-13

申请号：US09385632

申请日：1998-08-27

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K702

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US5936832A

公开(公告)日：1999-08-10

申请号：US790055

申请日：1997-01-28

申请人： Ryuichi Saito ,  Hidekatsu Onose ,  Yutaka Kobayashi ,  Michio Ohue

发明人： Ryuichi Saito ,  Hidekatsu Onose ,  Yutaka Kobayashi ,  Michio Ohue

IPC分类号： G11C14/00 ,  G11C11/22 ,  G11C11/56 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/112 ,  H01L27/115 ,  H01G4/06

CPC分类号： H01L27/11502 ,  G11C11/22 ,  G11C11/5657 ,  G11C16/08 ,  G11C8/14 ,  H01L27/10805

摘要： A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.

公开(公告)号：US5868961A

公开(公告)日：1999-02-09

申请号：US514085

申请日：1995-08-11

申请人： Takaaki Shimizu ,  Tsutomu Ogihara ,  Takeshi Kinsho ,  Tatsushi Kaneko ,  Ryuichi Saito ,  Hideshi Kurihara

发明人： Takaaki Shimizu ,  Tsutomu Ogihara ,  Takeshi Kinsho ,  Tatsushi Kaneko ,  Ryuichi Saito ,  Hideshi Kurihara

IPC分类号： C09K19/40 ,  C09K19/42 ,  C09K19/34 ,  C07F7/08 ,  C09K19/06

CPC分类号： C09K19/42 ,  C09K19/406

摘要： A silacyclohexane compound represented by the following general formula (I). ##STR1## In this formula, R denotes a linear-chain alkyl group with 1-10 carbon atoms, a branched-chain alkyl group with 3-8 carbon atoms, a mono- or di-fluoroalkyl group with 1-10 carbon atoms, an alkoxyalkyl group with 2-7 carbon atoms, or an alkenyl group with 2-8 carbon atoms. ##STR2## is trans-1-silacyclohexylene or trans-4-silacyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3. X denotes a R, OR, CN, F, Cl, CF.sub.3, CF.sub.2 Cl, CHFCl, OCF.sub.3, OCHF.sub.2, OCF.sub.2 Cl, OCHFCl, --(O).sub.m --CY.sub.1 .dbd.CX.sub.1 X.sub.2 (m denotes 0 or 1, Y.sub.1 and X.sub.1 respectively denote H, F or Cl, and X.sub.2 denotes F or Cl) or --O--C.sub.r F.sub.s H.sub.2r+1-s is (r denotes an integral of 2 to 4 and s denotes an integral of 1 to 7) group. Y denotes H or F. Z denotes H or F.

摘要翻译： 由以下通式（I）表示的硅环己烷化合物。 （1）在该式中，R表示具有1-10个碳原子的直链烷基，具有3-8个碳原子的支链烷基，具有1-10个碳原子的单 - 或二 - 氟代烷基 碳原子，具有2-7个碳原子的烷氧基烷基或具有2-8个碳原子的链烯基。 其中1位或4位的硅具有H，F，Cl或CH 3的取代基的反式-1-硅杂环己烯或反式-4-硅环己基。 X表示R，OR，CN，F，Cl，CF 3，CF 2 Cl，CHFCl，OCF 3，OCHF 2，OCF 2 Cl，OCHFCl， - （O）m -CY1 = CX1X2（m表示0或1，Y1和X1分别表示H ，F或Cl，X2表示F或Cl）或-O-CrFsH2r + 1-s是（r表示2〜4的整数，s表示1〜7的整数）。 Y表示H或F.Z表示H或F.

公开(公告)号：US5567350A

公开(公告)日：1996-10-22

申请号：US383368

申请日：1995-02-03

申请人： Takaaki Shimizu ,  Takeshi Kinsho ,  Tsutomu Ogihara ,  Tatsushi Kaneko ,  Ryuichi Saito ,  Hideshi Kurihara

发明人： Takaaki Shimizu ,  Takeshi Kinsho ,  Tsutomu Ogihara ,  Tatsushi Kaneko ,  Ryuichi Saito ,  Hideshi Kurihara

IPC分类号： C07F7/08 ,  C09K19/40 ,  C09K19/34 ,  C09K19/30 ,  G02F1/13

CPC分类号： C09K19/406 ,  C07F7/0818 ,  C07F7/0896

摘要： A silacyclohexane compound of formula (I): ##STR1## wherein R denotes a linear-chain alkyl group, a mono- or di-fluoroalkyl group, a branched-chain alkyl group, an alkoxyalkyl group, or an alkenyl group: at least one of ##STR2## denotes a 1-sila-1,4-cyclohexylene or a 4-sila-1,4-cyclohexylene group whose silicon at position 1 or 4 is H, F, Cl or CH.sub.3, and the other denotes a 1,4-cyclohexylene group, a 1-sila-1,4-cyclohexylene or a 4-sila-1,4-cyclohexylene group whose silicon at position 1 or 4 is H F, Cl or CH.sub.3 ; X denotes a substitutional group at an equatorial position, specifically CN, an alkyl group with its end group replaced by a trifluoromethyl group, an alkoxy group, an alkanoyloxy group, an alkoxycarbonyl group, a linear-chain alkyl group, or an alkoxyalkyl group; Y denotes a group at an axial position, specifically H or CN when Y is connected to a carbon atom in said (B) group or H, F, Cl or CH.sub.3 when Y is connected to a silicon atom in said (B) group.

摘要翻译： 式（I）的硅环己烷化合物：其中R表示直链烷基，单或二氟烷基，支链烷基，烷氧基烷基或烯基： “IMAGE”中的至少一个表示1-硅环-1,4-亚环己基或4-硅烷-1,4-亚环己基，其1或4位的硅为H，F，Cl或CH 3，另一个表示 位置1或4的硅为HF，Cl或CH3的1,4-亚环己基，1-硅烷-1,4-亚环己基或4-硅烷-1,4-亚环己基; X表示赤道位置的取代基，特别是CN，其端基被三氟甲基，烷氧基，烷酰氧基，烷氧基羰基，直链烷基或烷氧基烷基取代的烷基。 当Y连接到所述（B）基团中的硅原子时，Y表示在轴向位置的基团，特别是H或CN，当Y连接到所述（B）基团中的碳原子或H，F，Cl或CH 3时。

公开(公告)号：US5496501A

公开(公告)日：1996-03-05

申请号：US341218

申请日：1994-12-05

申请人： Takaaki Shimizu ,  Tsutomu Ogihara ,  Takeshi Kinsho ,  Tatsushi Kaneko ,  Ryuichi Saito ,  Hideshi Kurihara

发明人： Takaaki Shimizu ,  Tsutomu Ogihara ,  Takeshi Kinsho ,  Tatsushi Kaneko ,  Ryuichi Saito ,  Hideshi Kurihara

IPC分类号： C07F7/08 ,  C07F7/12 ,  C09K19/40 ,  C09K19/34

CPC分类号： C07F7/0896 ,  C07F7/0818 ,  C07F7/12 ,  C09K19/406

摘要： A silacyclohexane compound represented by the following general formula (I). ##STR1## In this formula, R denotes a linear-chain alkyl group with a carbon number of 1-10, a mono- or di-fluoroalkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8, an alkoxyalkyl group with a carbon number of 2-7, or an alkenyl group with a carbon number of 2-8. ##STR2## denotes a trans-1-silacyclohexylene or trans-4-silacyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3. X denotes a CN, F, Cl, CF.sub.3, CF.sub.2 Cl, CHFCl, OCF.sub.3, OCHF.sub.2, OCF.sub.2 Cl, OCHFCl, R or OR group. Y denotes H or F. Z denotes H or F.

摘要翻译： 由以下通式（I）表示的硅环己烷化合物。 （I）在该式中，R表示碳数为1-10的直链烷基，碳数为1〜10的单 - 或二 - 氟烷基，支链烷基 碳数为3-8，碳数为2-7的烷氧基烷基或碳数为2-8的烯基。 表示1位或4位的硅具有H，F，Cl或CH 3的取代基的反式-1-硅杂环己烯或反式-4-硅杂环己烯基。 X表示CN，F，Cl，CF 3，CF 2 Cl，CHFCl，OCF 3，OCHF 2，OCF 2 Cl，OCHFCl，R或OR基团。 Y表示H或F.Z表示H或F.

公开(公告)号：USRE34158E

公开(公告)日：1993-01-12

申请号：US744514

申请日：1991-08-13

申请人： Atsuo Watanabe ,  Takahiro Nagano ,  Takahide Ikeda ,  Naohiro Momma ,  Ryuichi Saito

发明人： Atsuo Watanabe ,  Takahiro Nagano ,  Takahide Ikeda ,  Naohiro Momma ,  Ryuichi Saito

IPC分类号： H01L21/762 ,  H01L21/763 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/092

CPC分类号： H01L27/0928 ,  H01L21/76224 ,  H01L21/763 ,  H01L21/823892 ,  H01L27/0623

摘要： A monolithic complementary semiconductor device comprising n-type and p-type well regions separated by a dielectric isolation region extending from the surface into the substrate region. The well region includes a highly doped buried region which is located at the bottom of the well region and separates an active region in the wall from the substrate region. The isolation region is deeper than the buried region. The well-to-well isolation is enhanced by the combination of the buried region and the deep dielectric isolation region. Packing density and the high speed operation can also be improved.

公开(公告)号：US4862240A

公开(公告)日：1989-08-29

申请号：US85260

申请日：1987-08-12

申请人： Atsuo Watanabe ,  Takahiro Nagano ,  Takahide Ikeda ,  Naohiro Momma ,  Ryuichi Saito

发明人： Atsuo Watanabe ,  Takahiro Nagano ,  Takahide Ikeda ,  Naohiro Momma ,  Ryuichi Saito

IPC分类号： H01L29/78 ,  H01L21/74 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/092

CPC分类号： H01L21/76224 ,  H01L21/74 ,  H01L21/76205 ,  H01L21/763 ,  H01L21/823892 ,  H01L27/092 ,  H01L27/0623

摘要： A monolithic complementary semiconductor device comprising n-type and p-type well regions separated by a dielectric isolation region extending from the surface into the substrate region. The well region includes a highly doped buried region which is located at the bottom of the well region and separates an active region in the well from the substrate region. The isolation region is deeper than the buried region. The well-to-well isolation is enhanced by the combination of the buried region and the deep dielectric isolation region. Packing density and the high speed operation can also be improved.

摘要翻译： 一种单片互补半导体器件，包括由从表面延伸到衬底区域的电介质隔离区隔开的n型和p型阱区。 阱区域包括高度掺杂的掩埋区域，其位于阱区域的底部并且将阱中的有源区域与衬底区域分离。 隔离区域比掩埋区域深。 通过掩埋区域和深介电隔离区域的组合增强了井对阱隔离。 包装密度和高速运转也可以提高。

公开(公告)号：US20210392550A1

公开(公告)日：2021-12-16

申请号：US17326817

申请日：2021-05-21

申请人： Ryuichi Saito

发明人： Ryuichi Saito

IPC分类号： H04W28/26 ,  H04B7/155 ,  H04L29/08 ,  H04L29/06

摘要： A resource management system includes a resource management device that manages a usage of a resource, a reservation management device that manages a reservation for the resource, and a communication relay device that communicates with the resource management device. The resource management device receives reservation information transmitted from the reservation management device. The reservation information is information on the reservation for the resource. The resource management device transmits, to the communication relay device, a request for identification information identifying the communication relay device. The resource management device receives the identification information, which is transmitted from the communication relay device in response to the request. The identification information is used to execute an event associated with the reservation information. The resource management device transmits, to an operation display terminal that displays a usage status of the resource, the identification information and a password that is associated with the identification information.

公开(公告)号：US08653652B2

公开(公告)日：2014-02-18

申请号：US13499520

申请日：2010-08-24

申请人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Toshiya Satoh ,  Hideaki Ishikawa ,  Nobutake Tsuyuno ,  Shigeo Amagi

发明人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Toshiya Satoh ,  Hideaki Ishikawa ,  Nobutake Tsuyuno ,  Shigeo Amagi

IPC分类号： H01L23/34

CPC分类号： H02M7/003 ,  H01L23/473 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/34 ,  H01L25/072 ,  H01L2224/33 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K7/1432 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device includes: a case with an opening formed thereat; a semiconductor element housed inside the case; a first conductor plate housed inside the case and positioned at one surface side of the semiconductor element; a second conductor plate housed inside the case and positioned at another surface side of the semiconductor element; a positive bus bar electrically connected to the first conductor plate, through which DC power is supplied; a negative bus bar electrically connected to the second conductor plate, through which DC power is supplied; a first resin member that closes off the opening at the case; and a second resin member that seals the semiconductor element, the first conductor plate and the second conductor plate and is constituted of a material other than a material constituting the first resin member.

摘要翻译： 一种半导体器件包括：形成有开口的壳体; 容纳在壳体内的半导体元件; 容纳在壳体内并位于半导体元件的一个表面侧的第一导体板; 第二导体板，容纳在所述壳体内并且位于所述半导体元件的另一表面侧; 电连接到第一导体板的正母线，通过其提供直流电力; 电连接到第二导体板的负母线，通过其提供直流电力; 封闭壳体上的开口的第一树脂构件; 以及第二树脂构件，其密封半导体元件，第一导体板和第二导体板，并且由构成第一树脂构件的材料以外的材料构成。

公开(公告)号：US08416574B2

公开(公告)日：2013-04-09

申请号：US13152505

申请日：2011-06-03

申请人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Keisuke Horiuchi ,  Toshiya Satoh ,  Hideki Miyazaki

发明人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Keisuke Horiuchi ,  Toshiya Satoh ,  Hideki Miyazaki

IPC分类号： H05K7/20

CPC分类号： H05K7/20927 ,  B60K6/26 ,  B60K6/28 ,  B60K6/46 ,  B60K17/16 ,  B60L11/1803 ,  B60L15/007 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2240/429 ,  B60Y2200/92 ,  H01L23/3121 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/473 ,  H01L23/492 ,  H01L23/49517 ,  H01L24/45 ,  H01L25/072 ,  H01L2224/40137 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1203 ,  H01L2924/13055 ,  H02M7/003 ,  H02M7/537 ,  H02P27/06 ,  H05K1/0262 ,  H05K7/2089 ,  Y10S903/906 ,  Y10S903/907 ,  Y10S903/909 ,  H01L2924/00 ,  H01L2224/45099

摘要： An electric power conversion apparatus includes: a channel case in which a cooling water channel is formed; a double side cooling semiconductor module that comprises an upper and lower arms series circuit of an inverter circuit; a capacitor module; a direct current connector; and an alternate current connector. The semiconductor module comprises a first and a second heat dissipation metals whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit is disposed tightly between the first heat dissipation metal and the second heat dissipation metal, and the semiconductor module further comprises a direct current positive terminal, a direct current negative terminal, and an alternate current terminal which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet to a cooling water outlet, and a first opening which opens into the cooling water channel.

摘要翻译： 电力转换装置包括：形成冷却水通道的通道壳体; 包括逆变器电路的上臂和下臂串联电路的双面冷却半导体模块; 电容器模块; 直流连接器; 和备用电流连接器。 半导体模块包括第一和第二散热金属，其外表面是散热表面，上下臂串联电路紧密地设置在第一散热金属和第二散热金属之间，并且半导体模块还包括 直流正极端子，直流负极端子和突出到外部的交流电流端子。 通道壳体设置有从冷却水入口延伸到冷却水出口的冷却水通道以及通向冷却水通道的第一开口。