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    VACUUM PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS WITH TEMPERATURE CONTROL FUNCTION FOR WAFER STAGE
    62.
    发明申请
    VACUUM PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS WITH TEMPERATURE CONTROL FUNCTION FOR WAFER STAGE 有权
    具有温度控制功能的真空加工设备和等离子体加工设备

    公开(公告)号：US20110132541A1

    公开(公告)日：2011-06-09

    申请号：US12696552

    申请日：2010-01-29

    申请人： Takumi TANDOU ,  Masaru Izawa

    发明人： Takumi TANDOU ,  Masaru Izawa

    IPC分类号： H01L21/465

    CPC分类号： H01L21/67109 ,  H01L21/67017

    摘要： A wafer stage includes a first evaporator where a refrigerant circulates. The first evaporator makes up a cooling cycle with a compressor, first condenser, expansion valve, second evaporator, refrigerant thermometer, and refrigerant flowmeter. The first condenser is supplied with a heat exchange medium. The temperature of a coolant supplied to the second evaporator is measured by an inlet refrigerant thermometer and outlet refrigerant thermometer, while the flow rate of the coolant is monitored and adjusted by a flow-rate adjuster. The temperature difference in the coolant between being at the inlet and at the outlet and flow rate can be measured. Upon complete evaporation of the refrigerant in the second evaporator, the dryness of the refrigerant discharged from the wafer stage is calculated from the amount of heat absorbed from (exchanged with) the coolant, the circulation amount of the refrigerant and the refrigerant temperature to control the rotational speed of the compressor.

    摘要翻译： 晶片台包括制冷剂循环的第一蒸发器。 第一蒸发器与压缩机，第一冷凝器，膨胀阀，第二蒸发器，制冷剂温度计和制冷剂流量计构成冷却循环。 第一冷凝器配有热交换介质。 通过入口制冷剂温度计和出口制冷剂温度计测量供应到第二蒸发器的冷却剂的温度，同时通过流速调节器监测和调节冷却剂的流量。 可以测量在入口和出口处的冷却剂的温度差和流量。 在第二蒸发器中制冷剂完全蒸发时，从冷却剂的吸收热量，制冷剂的循环量和制冷剂的温度来计算从晶片台排出的制冷剂的干度，以控制 压缩机的转速。

    PLASMA PROCESSING APPARATUS AND MAINTENANCE METHOD THEREFOR
    63.
    发明申请
    PLASMA PROCESSING APPARATUS AND MAINTENANCE METHOD THEREFOR 有权
    等离子体加工设备及其维护方法

    公开(公告)号：US20100326094A1

    公开(公告)日：2010-12-30

    申请号：US12538986

    申请日：2009-08-11

    申请人： Takumi TANDOU ,  Masaru Izawa

    发明人： Takumi TANDOU ,  Masaru Izawa

    IPC分类号： F25B45/00 ,  H01L21/3065 ,  F25B19/00

    CPC分类号： H01J37/32091 ,  F25B45/00 ,  F25B2500/06 ,  H01J2237/2001

    摘要： In a plasma processing apparatus, a check valve is installed close to a refrigerant inlet of a compressor. When performing maintenance of a sample stage, refrigerant collected from a refrigerant flow path is temporarily stored in a flow path section extending from an expansion valve to the check valve, making it possible to perform the maintenance without changing the amount of refrigerant in the refrigerating cycle. With a refrigerant storage tank, a refrigerant supply valve, and a refrigerant discharge valve included in the refrigerating cycle, when maintenance of the compressor, a condenser, or the expansion valve is performed, the refrigerant collected from the refrigerating cycle can be put in use again.

    摘要翻译： 在等离子体处理装置中，止回阀安装在压缩机的制冷剂入口附近。 在对样品台进行维护时，从制冷剂流路收集的制冷剂暂时存储在从膨胀阀向止回阀延伸的流路部中，能够不改变制冷循环中的制冷剂量而进行维护 。 在冷冻循环中包括的制冷剂储存箱，制冷剂供给阀和制冷剂排出阀中，当执行压缩机，冷凝器或膨胀阀的维护时，可以使用从制冷循环中收集的制冷剂 再次。

    Method for smoothing a resist pattern prior to etching a layer using the resist pattern
    64.
    发明授权
    Method for smoothing a resist pattern prior to etching a layer using the resist pattern 失效
    在使用抗蚀剂图案蚀刻层之前使抗蚀剂图案平坦化的方法

    公开(公告)号：US07723235B2

    公开(公告)日：2010-05-25

    申请号：US11571853

    申请日：2005-06-10

    申请人： Masaru Kurihara ,  Masaru Izawa

    发明人： Masaru Kurihara ,  Masaru Izawa

    IPC分类号： H01L21/311 ,  H01L21/3065

    CPC分类号： H01L21/28035 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76885 ,  H01L29/6659 ,  H01L29/7833

    摘要： After a polycrystalline silicon film (5) is formed on a semiconductor substrate via an insulating film for a gate insulating film (step S1), an organic antireflection film (21) is formed on the polycrystalline silicon film (5) (step S2), and a resist pattern (22) is formed on the antireflection film (21) (step S3). Then, a passivation film (23) is deposited on the antireflection film (21) so as to cover the resist pattern (22) by plasma using fluorocarbon gas while a bias voltage is being applied to the semiconductor substrate (step S4). Then, the passivation film (23) and the antireflection film (21) are etched by plasma using gas containing oxygen gas (step S5). Thereafter, the polycrystalline silicon film (5) is etched using the resist pattern (22) with reduced line edge roughness as an etching mask to form a gate electrode (step S6).

    摘要翻译： 在通过栅极绝缘膜用绝缘膜在半导体基板上形成多晶硅膜（5）（步骤S1）之后，在多晶硅膜（5）上形成有机防反射膜（21）（步骤S2） 并且在防反射膜（21）上形成抗蚀剂图案（22）（步骤S3）。 然后，在防反射膜（21）上沉积钝化膜（23），以便在对半导体衬底施加偏置电压的同时使用碳氟化合物气体通过等离子体覆盖抗蚀剂图案（步骤S4）。 然后，使用含氧气体的等离子体蚀刻钝化膜（23）和防反射膜（21）（步骤S5）。 此后，使用具有减小的线边缘粗糙度的抗蚀剂图案（22）蚀刻多晶硅膜（5）作为蚀刻掩模以形成栅电极（步骤S6）。

    DRY-ETCHING METHOD AND APPARATUS
    65.
    发明申请
    DRY-ETCHING METHOD AND APPARATUS 审中-公开
    干燥方法和装置

    公开(公告)号：US20090181545A1

    公开(公告)日：2009-07-16

    申请号：US12400697

    申请日：2009-03-09

    申请人： Nobuyuki Negishi ,  Masaru Izawa ,  Masatsugu Arai

    发明人： Nobuyuki Negishi ,  Masaru Izawa ,  Masatsugu Arai

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/32935 ,  C23F4/00 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

    摘要： A resist damage free dry-etching process is proposed. A time duration defined until bias electric power is applied is controlled according to a plasma ignition detection signal. Wafer back-side gas pressure for a certain constant time after starting of an etching process operation is set to be lower than that as to a main etching condition. Within the time duration defined after starting of the etching process operation up to a certain constant time, CxFy gas having a lower C/F ratio than that of the main etching condition is employed, or a flow rate of the CxFy gas is lowered. The above-described parameter values are controlled every wafer according to an amount of radicals contained in the plasma being monitored. A unit for preheating a wafer is installed in a wafer transporting system.

    摘要翻译： 提出了一种抗蚀损坏自由干蚀刻工艺。 根据等离子体点火检测信号控制施加偏压电力之前定义的持续时间。 在开始蚀刻处理操作之后，将一定时间的晶片后侧气体压力设定为低于主蚀刻条件。 在蚀刻处理操作开始定义的持续时间之前，采用比主蚀刻条件低C / F比的CxFy气体，或者降低CxFy气体的流量。 根据被监测的等离子体中所含的自由基的量，每个晶片控制上述参数值。 用于预热晶片的单元安装在晶片传送系统中。

    Plasma processing apparatus capable of adjusting temperature of sample stand
    66.
    发明申请
    Plasma processing apparatus capable of adjusting temperature of sample stand 有权
    能够调节样品台温度的等离子体处理装置

    公开(公告)号：US20080023448A1

    公开(公告)日：2008-01-31

    申请号：US11512118

    申请日：2006-08-30

    申请人： Takumi Tandou ,  Ken'etsu Yokogawa ,  Seiichiro Kanno ,  Masaru Izawa

    发明人： Takumi Tandou ,  Ken'etsu Yokogawa ,  Seiichiro Kanno ,  Masaru Izawa

    IPC分类号： B23K9/00

    CPC分类号： H01L21/67248 ,  H01J2237/2001 ,  H01L21/67109

    摘要： A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.

    摘要翻译： 提供一种等离子体处理装置，其通过使用在处理室中形成的等离子体处理在真空容器中布置在处理室中的样品台上保持的样品。 等离子体处理装置包括：布置在样品台中的通道，其中供应冷却剂并在其流动时蒸发; 具有样品台，压缩机，冷凝器和膨胀阀的制冷循环，其顺序连接并使冷却剂在其中循环; 冷却剂通道使已经通过膨胀阀的冷却剂分支，然后与从样品台中的路径朝向压缩机返回的冷却剂合流; 以及调节器，用于调节通过样品台中的路径并在制冷循环中循环的冷却剂的量以及分配并流过冷却剂通道的冷却剂量。