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    Lithographic apparatus and device manufacturing method
    64.
    发明授权
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号：US08263296B2

    公开(公告)日：2012-09-11

    申请号：US12707104

    申请日：2010-02-17

    申请人： Paul Christiaan Hinnen ,  Marcus Adrianus Van De Kerkhof ,  Reiner Maria Jungblut ,  Koenraad Remi André Maria Schreel

    发明人： Paul Christiaan Hinnen ,  Marcus Adrianus Van De Kerkhof ,  Reiner Maria Jungblut ,  Koenraad Remi André Maria Schreel

    IPC分类号： G03C5/00

    CPC分类号： G03B27/32 ,  G03B27/34 ,  G03F7/70625 ,  G03F7/70641

    摘要： A lithographic system includes a monitored lithographic projection apparatus arranged to project a patterned beam onto a substrate. A scatterometer measures a plurality of parameters of the pattern transferred to the substrate including at least one CD-profile parameter and at least one further parameter of the pattern transferred to the substrate which is indicative of a machine setting of the monitored lithographic projection apparatus. A matching system includes a database storing information representative of reference CD values and reference values for the further feature. A comparison arrangement compares the measured values with the corresponding stored values, a lithographic parameter calculation means calculating a corrected set of machine settings for the monitored lithographic apparatus dependent on the differences between the measured and reference values.

    摘要翻译： 平版印刷系统包括被设置为将图案化的光束投影到基底上的被监视的光刻投影装置。 散射仪测量转移到衬底的图案的多个参数，包括至少一个CD轮廓参数和转移到衬底的图案的至少一个另外的参数，该参数指示所监视的光刻投影设备的机器设置。 匹配系统包括存储表示参考CD值的信息的数据库和用于另外的特征的参考值。 比较装置将测量值与对应的存储值进行比较，光刻参数计算装置根据测量值和参考值之间的差异来计算被监测光刻设备的校正的机器设置集合。

    Method and Apparatus for Measuring Line End Shortening, Substrate and Patterning Device
    70.
    发明申请
    Method and Apparatus for Measuring Line End Shortening, Substrate and Patterning Device 有权
    测量线端缩短，基板和图案化装置的方法和装置

    公开(公告)号：US20110109888A1

    公开(公告)日：2011-05-12

    申请号：US12933806

    申请日：2009-04-22

    申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

    发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

    IPC分类号： G03B27/42 ,  G01N21/47

    CPC分类号： G03F7/70683 ,  G01N21/95607 ,  G03F1/0092 ,  G03F1/14 ,  G03F1/44 ,  G03F1/84 ,  G03F7/70625 ,  G03F7/70641

    摘要： End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

    摘要翻译： 在使用光刻设备的部件的制造期间可能发生线路效应的结束。 这些线路效应的结束可能导致正在制造的功能的线端缩短。 这种线端缩短可能对正在制造的部件产生不利影响。 因此，希望预测和/或监视线端缩短。 提供了具有两个独立区域的测试图案，使得如设计的那样，当两个区域被辐射照射时（例如，从角度分辨的散射仪）照射，它们导致具有彼此相等的不对称性的漫射辐射， 但在数量上相反。 当实际制造测试图形时，发生线端缩短，因此两个区域的不对称性不相等。 根据制造的测试图案的测量不对称性，可以估计发生的线端缩短量。