公开(公告)号：US07198992B2

公开(公告)日：2007-04-03

申请号：US10867515

申请日：2004-06-14

申请人： Takashi Hamada ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Toru Takayama

发明人： Takashi Hamada ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Toru Takayama

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L21/02672 ,  G02F1/13454 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L27/1288 ,  H01L27/3246 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/56

摘要： The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the semiconductor film containing a rare gas element by a heat treatment. Furthermore, a first impurity region and a second impurity region formed in a semiconductor layer of a first n-channel TFT are provided outside a gate electrode. A third impurity region formed in a semiconductor layer of a second n-channel TFT is provided so as to be partially overlapped with a gate electrode. A third impurity region is provided outside a gate electrode. A fourth impurity region formed in a semiconductor layer of a p-channel TFT is provided so as to be partially overlapped with a gate electrode. A fifth impurity region is provided outside a gate electrode.

摘要翻译： 本发明的特征在于，在通过阻挡层使用催化元件而获得的结晶半导体膜上形成含有稀有气体元素的半导体膜，催化元素从结晶半导体膜移动到含有 稀有气体元素通过热处理。 此外，形成在第一n沟道TFT的半导体层中的第一杂质区域和第二杂质区域设置在栅电极的外侧。 形成在第二n沟道TFT的半导体层中的第三杂质区域设置成与栅电极部分重叠。 第三杂质区域设置在栅极外部。 形成在p沟道TFT的半导体层中的第四杂质区域设置成与栅电极部分重叠。 第五杂质区域设置在栅极外部。

公开(公告)号：US20070064752A1

公开(公告)日：2007-03-22

申请号：US11501064

申请日：2006-08-09

申请人： Toru Takayama ,  Isao Kidoguchi ,  Takayuki Kashima

发明人： Toru Takayama ,  Isao Kidoguchi ,  Takayuki Kashima

IPC分类号： H01S3/10

CPC分类号： H01S5/40 ,  H01S5/162 ,  H01S5/22 ,  H01S5/4087

摘要： Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the design of an optical system.

摘要翻译： 用于各波长的半导体激光器具有不同长度的窗口区域，以获得用于各个波长的发射光的最佳FFP，因此对波长的依赖性可以相等于波长，从而有助于光学系统的设计。

公开(公告)号：US07151015B2

公开(公告)日：2006-12-19

申请号：US09852672

申请日：2001-05-11

申请人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

发明人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/124 ,  H01L21/32136 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78684 ,  H01L2029/7863

摘要： There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.

摘要翻译： 当形成具有LDD结构的TFT或具有GOLD结构的TFT时，存在制造过程复杂并且处理次数增加的问题。 在制造半导体器件的方法中，在第二掺杂工艺中形成低浓度杂质区（24,25）之后，与第三电极（18c）重叠的低浓度杂质区的宽度和 可以通过第四蚀刻工艺来自由地控制不与第三电极重叠的低浓度杂质区域。 因此，在与第三电极重叠的区域中，实现电场浓度的松弛，然后可以防止热载流子注入。 并且，在不与第三电极重叠的区域中，可以抑制截止电流值。

公开(公告)号：US07148094B2

公开(公告)日：2006-12-12

申请号：US10808353

申请日：2004-03-25

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

IPC分类号： H01L21/336 ,  H01L21/84

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/78675

摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

摘要翻译： 公开了一种半导体器件。 半导体器件具有作为有源层区域的晶体硅膜。 结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。 制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

公开(公告)号：US20060231527A1

公开(公告)日：2006-10-19

申请号：US11452987

申请日：2006-06-15

申请人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

发明人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

IPC分类号： B44C1/22 ,  C03C25/68

CPC分类号： H01L27/1266 ,  H01L21/02672 ,  H01L21/2007 ,  H01L21/2022 ,  H01L21/76251 ,  H01L27/124 ,  H01L29/41733 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01021 ,  H01L2924/01055 ,  H01L2924/01068 ,  H01L2924/07811 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.

摘要翻译： 提供了一种以高产率分离层压体而不损坏层压体的方法。 此外，提供了总体薄的制造轻量，柔性半导体器件的方法。 半导体器件的制造方法包括：在第一基板上层叠金属层，氧化物层，不含氢元素的层和层叠体的第一工序; 在透明基板上形成光催化层的第二步骤; 以及第三步骤，通过在第一和第二步骤之后使用第一粘合剂材料将光催化层附着到层压体的表面，将金属层与氧化物层分离，并且从透明基板的侧面照射光，使得 分离光催化层和第一粘合剂材料之间的界面以除去第一粘合剂材料。

公开(公告)号：US20060214306A1

公开(公告)日：2006-09-28

申请号：US11420390

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L23/52 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83205 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/83851 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01003 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599

摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.

摘要翻译： 通过转印技术提供具有形成为集成薄膜的多个器件形成层的半导体芯片。 根据本发明，可以通过转移厚度最多为50um的器件形成层，通过技术将其从衬底分离成另一衬底而制成形成薄膜并且高度集成的半导体芯片 用于转移和转移厚度至多为50um的另一器件形成层，其从另一衬底分离到上述器件形成层，并且重复该转印过程。

公开(公告)号：US20060208263A1

公开(公告)日：2006-09-21

申请号：US11433084

申请日：2006-05-12

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

IPC分类号： H01L31/12 ,  H01L21/00

CPC分类号： H01L27/3211 ,  H01L21/67207 ,  H01L27/3209 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

公开(公告)号：US20060186399A1

公开(公告)日：2006-08-24

申请号：US11206000

申请日：2005-08-18

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L29/08

CPC分类号： H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

公开(公告)号：US07084045B2

公开(公告)日：2006-08-01

申请号：US11007308

申请日：2004-12-09

申请人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

发明人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/02672 ,  H01L21/2007 ,  H01L21/2022 ,  H01L21/76251 ,  H01L27/124 ,  H01L29/41733 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01021 ,  H01L2924/01055 ,  H01L2924/01068 ,  H01L2924/07811 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.

公开(公告)号：US20060148216A1

公开(公告)日：2006-07-06

申请号：US11295470

申请日：2005-12-07

申请人： Toru Takayama ,  Kengo Akimoto

发明人： Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L21/20

CPC分类号： H01L29/66757 ,  H01L29/78666 ,  H01L29/78675

摘要： Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for forming an amorphous silicon film having distortion. In the deposition of an amorphous silicon film using a sputter method, a condition is provided with a frequency of 15 to 25 kHz and a deposition power of 0.5 to 3 kW. This can sufficiently contain Ar at 10×1020/cm3 or more in an amorphous silicon film, thus making possible to form an amorphous silicon film having distortion.