公开(公告)号：US07083677B2

公开(公告)日：2006-08-01

申请号：US10921303

申请日：2004-08-19

申请人： Masayuki Watanabe

发明人： Masayuki Watanabe

IPC分类号： C30B15/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/36

摘要： Using a seed crystal comprising a silicon single crystal not including a vacancy excess region, a neck comprising a silicon single crystal not including a vacancy excess region is grown with a diameter contracted smaller than, or equal to that of the contact surface of the silicon seed crystal in contact with a raw material silicon melt, and necking is performed so that the length L of the neck satisfies L≧d·(cot ψ), where d denotes the length of the diameter or the diagonal of the contact surface of the silicon seed crystal in contact with the raw material silicon melt, and ψ denotes the angle formed between the propagation direction of dislocations and the growth direction of the neck, and then the silicon single crystal is grown with the diameter expanded.

摘要翻译： 使用包含不包括空位过剩区域的硅单晶的晶种，生长包含不包括空位过剩区域的单晶硅的颈部，其直径缩小到小于或等于硅晶粒的接触表面的直径 与原料硅熔体接触的晶体，并且进行颈缩，使得颈部的长度L满足L> = d。（cot psi），其中d表示直径或接触表面的对角线的长度 与原料硅熔体接触的硅晶种，psi表示位错的传播方向与颈部的生长方向之间形成的角度，然后使直径扩大的硅单晶生长。

公开(公告)号：US20060137712A1

公开(公告)日：2006-06-29

申请号：US11260568

申请日：2005-10-28

申请人： Yukihisa Wada ,  Masayuki Watanabe

发明人： Yukihisa Wada ,  Masayuki Watanabe

IPC分类号： C23G1/00 ,  B08B7/04 ,  B08B3/00 ,  C03C15/00 ,  B08B3/12 ,  C23F1/00 ,  H01L21/306

CPC分类号： B08B3/08 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/6708 ,  H01L21/67253

摘要： A method for cleaning electronic devices including the step of cleaning a target substrate placed in a cleaning chamber by etching using a cleaning solution which is circulated for reuse in a cleaning solution circulation path including at least the cleaning chamber and a cleaning solution circulation line, the method further including the steps of: (a) determining etch time based on data concerning variations in amount of a target film on the target substrate etched by the cleaning solution, the variations depending on time elapsed since the cleaning solution was fed into the cleaning solution circulation path; (b) etching the target substrate in the cleaning chamber using the cleaning solution for the determined etch time; and (c) rinsing the target substrate with water.

摘要翻译： 一种清洁电子设备的方法，包括以下步骤：通过使用在至少包括清洁室和清洁溶液循环管线的清洁溶液循环路径中循环再循环的清洁溶液进行蚀刻来清洁放置在清洁室中的目标基板的步骤， 方法还包括以下步骤：（a）基于关于由清洁溶液蚀刻的目标衬底上的目标膜的量的变化的数据确定蚀刻时间，这取决于从清洁溶液被供给到清洁溶液中经过的时间的变化 循环路径; （b）使用所述清洁溶液在所述清洁室中蚀刻所述目标衬底以确定蚀刻时间; 和（c）用水冲洗目标底物。

公开(公告)号：US06913031B2

公开(公告)日：2005-07-05

申请号：US10491955

申请日：2002-10-16

申请人： Tokuhide Nawata ,  Yoshihisa Sudoh ,  Masayuki Kouketsu ,  Masayuki Watanabe ,  Hiroki Doi

发明人： Tokuhide Nawata ,  Yoshihisa Sudoh ,  Masayuki Kouketsu ,  Masayuki Watanabe ,  Hiroki Doi

IPC分类号： G05D7/06

CPC分类号： G05D7/0647 ,  G05D7/0635 ,  Y10T137/0379 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/86421

摘要： A flow controller and a flow controlling method are adapted to be released from conventional restrictions by using a novel type called a pulse shot type. A pulse shot (opening/closing operation of a first cutoff valve (12) and, after that, opening/closing operation of a second cutoff valve (17)) is repeated. Simultaneously, a volume flow Q of process gas exhausted from the second cutoff valve (17) per unit time on the basis of after-filling pressure and after-exhaust pressure of the process gas in a gas filling capacity (13) measure by a pressure sensor (14). Furthermore, a mode of the pulse shot is changed to control the volume flow Q of the process gas exhausted from the second cutoff valve (17) per unit time.

摘要翻译： 流量控制器和流量控制方法适用于通过使用称为脉冲射击型的新颖型式从常规限制中解除。 重复脉冲（第一截止阀（12）的打开/关闭操作），之后，重新开启第二截止阀（17）的打开/关闭操作。 同时，基于填充气体（13）中的处理气体的补充压力和排气后压力，单位时间内从第二截止阀（17）排出的处理气体的体积流量Q通过压力 传感器（14）。 此外，改变脉冲射击的模式，以控制每单位时间从第二截止阀（17）排出的处理气体的体积流量Q。

公开(公告)号：US20050039671A1

公开(公告)日：2005-02-24

申请号：US10941993

申请日：2004-09-16

申请人： Masayuki Watanabe ,  Junichi Osanai ,  Akihiko Kobayashi ,  Kazuhiko Kashima ,  Hiroyuki Fujimori

发明人： Masayuki Watanabe ,  Junichi Osanai ,  Akihiko Kobayashi ,  Kazuhiko Kashima ,  Hiroyuki Fujimori

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B29/06 ,  C30B33/00 ,  H01L21/322 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/203 ,  C30B29/06 ,  C30B33/00

摘要： At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.

摘要翻译： 在从根据切克劳斯基法生长的氮掺杂硅单晶制造硅单晶晶片时，覆盖有氧沉淀体微观缺陷和氧化诱导堆垛层错的区域的硅单晶晶片混合存在 在还原气体或惰性气体气氛中在1100〜1300℃的温度下进行热处理。 以这种方式，制造在整个表面中不存在生长的晶体缺陷的高质量硅单晶晶片和硅单晶晶片的方法，并且充分地形成氧沉淀体微观缺陷（BMD） 可以提供高密度以在内侧显示IG效果。 单晶晶片可以适合用于形成半导体器件的操作区域。

公开(公告)号：US06763738B1

公开(公告)日：2004-07-20

申请号：US09604975

申请日：2000-06-28

申请人： Takashi Tsutsui ,  Masayuki Watanabe

发明人： Takashi Tsutsui ,  Masayuki Watanabe

IPC分类号： F16H5712

CPC分类号： B62D5/0421 ,  B62D5/0409 ,  F16C23/10 ,  F16C25/083 ,  F16C2326/24 ,  F16H55/24 ,  F16H57/12 ,  F16H2057/0213 ,  F16H2057/0224 ,  Y10T74/19828 ,  Y10T74/19842

摘要： An electric power steering apparatus having a reduction mechanism in which an inner peripheral face of a fitting hole provided to a gear housing is formed into an inclined face inclined with respect to a worm shaft so as to fit with and hold a bearing to which a worm shaft for transmitting rotating force of a steering assisting motor to a steering shaft provided with a worm wheel, an inclined contact surface in contact with the inclined face is provided on an outer periphery of the bearing, and the inclined contact surface of the bearing is moved along the inclined face of the fitting hole to adjust a distance between a shaft center of the worm shaft and a rotation center of the worm wheel.

摘要翻译： 一种具有减速机构的电动助力转向装置，其中设置在齿轮箱上的装配孔的内周面形成为相对于蜗杆轴倾斜的倾斜面，从而与蜗杆 用于将转向辅助电动机的转动力传递到设置有蜗轮的转向轴的轴上，与所述倾斜面接触的倾斜接触面设置在所述轴承的外周上，并且所述轴承的倾斜接触面移动 沿着装配孔的倾斜面调整蜗杆轴的中心与蜗轮的旋转中心之间的距离。

公开(公告)号：US06177739B1

公开(公告)日：2001-01-23

申请号：US09178301

申请日：1998-10-23

申请人： Tadashi Matsudaira ,  Masashi Sugano ,  Hiroshi Oyama ,  Masayuki Watanabe

发明人： Tadashi Matsudaira ,  Masashi Sugano ,  Hiroshi Oyama ,  Masayuki Watanabe

IPC分类号： H01H4700

CPC分类号： G03G15/5004 ,  Y10T307/696 ,  Y10T307/702 ,  Y10T307/826

摘要： In an electric power supply for supplying electric power, after a power factor has been improved, to an equipment having a power saving mode which is transferred to the power saving mode when the equipment is not operated for a predetermined period of time, the electric power supply includes: a power factor improvement section for improving the power factor by a switching operation; and a switch provided between a power source and the power factor improvement section for switching the electric power to either the power factor improvement section or the equipment. When the equipment is transferred to the power saving mode, the electric power is supplied by the switch to the equipment without passing through the power factor improvement section.

摘要翻译： 在功率因数提高的电力供给装置中，在设备未在规定时间内运转时，将具有省电模式的设备转换为省电模式的电力， 电源包括：用于通过切换操作来改善功率因数的功率因数改善部分; 以及设置在电源和功率因数改善部之间的开关，用于将功率切换到功率因数改善部或设备。 当设备转移到省电模式时，电源由开关提供给设备而不通过功率因数改善部分。

公开(公告)号：US5994611A

公开(公告)日：1999-11-30

申请号：US20843

申请日：1998-02-09

申请人： Masaharu Nishihara ,  Masaaki Nishikawa ,  Suminori Tanaka ,  Nanao Horiishi ,  Satoru Saito ,  Naruo Yokoyama ,  Kazuyuki Hayashi ,  Masayuki Watanabe

发明人： Masaharu Nishihara ,  Masaaki Nishikawa ,  Suminori Tanaka ,  Nanao Horiishi ,  Satoru Saito ,  Naruo Yokoyama ,  Kazuyuki Hayashi ,  Masayuki Watanabe

IPC分类号： C01G49/06 ,  C01G49/08 ,  A62D3/00 ,  C01G19/02 ,  C01G49/00 ,  C09C1/22

CPC分类号： B82Y30/00 ,  C01G49/06 ,  C01G49/08 ,  C01P2002/84 ,  C01P2002/88 ,  C01P2004/10 ,  C01P2004/20 ,  C01P2004/50 ,  C01P2004/51 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/60 ,  C01P2006/80

摘要： The disclosure describes plastic formed products comprising:one selected from the group consisting of a thermoplastic resin and a thermosetting resin; and0.1 to 10 wt % of at least one selected from the group consisting of ferric oxide hydroxide particles, hematite particles, magnetite particles and maghemite particles;wherein (1) the average major axial diameter or the plate diameter of said ferric oxide hydroxide particles is 0.02 or 2.0 .mu.m and the average aspect ratio or the plate ratio thereof is 2 to 20, (2) the average particle size of said hematite particles, magnetite particles and maghemite particles is 0.01 to 1.0, the BET specific surface area thereof is 1 to 120 m.sup.2 /g and the water content on the surfaces thereof is not less than 0.02 wt %/m.sup.2 /g.

摘要翻译： 本公开内容描述了塑料成型产品，其包括：选自热塑性树脂和热固性树脂的一种; 和0.1〜10重量％的选自氧化铁氢氧化物颗粒，赤铁矿颗粒，磁铁矿颗粒和磁赤铁矿颗粒中的至少一种; 其中（1）所述三氧化二铁氢氧化物颗粒的平均主轴径或板直径为0.02或2.0μm，平均纵横比或板的比例为2〜20，（2）所述赤铁矿的平均粒径 颗粒，磁铁矿颗粒和磁赤铁矿颗粒为0.01〜1.0，BET比表面积为1〜120m 2 / g，其表面含水率为0.02重量％/ m 2 / g以上。

公开(公告)号：US5837951A

公开(公告)日：1998-11-17

申请号：US682340

申请日：1996-07-25

申请人： Harunori Kato ,  Yasukazu Mizutani ,  Shigekazu Shibata ,  Katsuhiro Kimura ,  Hideki Koseki ,  Mitsuhiro Urano ,  Masayuki Watanabe

发明人： Harunori Kato ,  Yasukazu Mizutani ,  Shigekazu Shibata ,  Katsuhiro Kimura ,  Hideki Koseki ,  Mitsuhiro Urano ,  Masayuki Watanabe

IPC分类号： G01P15/03 ,  G01P15/135 ,  H01H35/02 ,  H01H35/14

CPC分类号： H01H35/142 ,  G01P15/032 ,  G01P15/135 ,  H01H35/02

摘要： A seismosensitive element includes a housing formed from an electrically conductive material and having an inclined face formed on the bottom thereof to gradually rise concentrically outwardly substantially from a center of the inner bottom face, and a header fixed to the housing to close its open end and having through-aperture in which an electrically conductive terminal pin is fixed in an insulated relation. A contact is fixed an end of the terminal pin located inside the housing and has a plurality of feather portions disposed concentrically with the terminal pin, the feather portions having a predetermined elasticity. An inertia ball is enclosed in the housing to be located substantially at the center in the housing in a normal position of the element in a stationary state. The inertia ball rolls when subjected to oscillation, so that the inertia ball slides on the feather portions of the contact except for distal ends of the feather portions such that the inertia ball electrically conducts between the contact and the housing and such that the feather portions are elastically deformed, thereby receiving a force causing the same to be pushed against the bottom of the housing. An acceleration responsive switch includes a receptacle including a housing having a conical face, an inertial ball in the receptacle, and an oscillation damping liquid in the receptacle. The oscillation damping liquid has a viscosity such that the inertial ball terminates rotation when it is subjected to an external oscillation to be rotated.

摘要翻译： 地震敏感元件包括由导电材料形成并具有形成在其底部上的倾斜面的壳体，其基本上从内底面的中心逐渐同心地向外升起，并且固定到壳体以将其开口端部闭合， 具有通孔，其中导电端子销以绝缘关系固定。 接触件固定在壳体内部的端子销的端部，并且具有与端子销同心设置的多个羽毛部分，羽毛部分具有预定的弹性。 惯性球被封闭在壳体中，以在固定状态下的元件的正常位置中大致位于壳体的中心。 惯性球在受到振动时滚动，使得惯性球在羽毛部的远端除了接触部的羽毛部分之外滑动，使得惯性球在接触和壳体之间电导通，使得羽毛部分 弹性变形，从而接收使其相对于壳体的底部被推压的力。 一种加速度响应开关包括一个插座，它包括一个具有圆锥面的壳体，该插座中的一个惯性球，以及该容器中的振荡阻尼液体。 振动阻尼液体具有这样的粘度，使得当惯性球经受外部振荡以旋转时终止旋转。

公开(公告)号：US5552026A

公开(公告)日：1996-09-03

申请号：US299834

申请日：1994-09-01

申请人： Hirihiko Ikegaya ,  Masaaki Isobe ,  Masayuki Watanabe

发明人： Hirihiko Ikegaya ,  Masaaki Isobe ,  Masayuki Watanabe

IPC分类号： C25D5/08 ,  C25D7/04 ,  C25D17/00 ,  B05C3/02 ,  C25D17/06

CPC分类号： C25D5/08 ,  C25D7/04

摘要： An improved surface treatment system, assembly, workstation and method for plating and the like. The assembly includes a suction pump along the treating liquid discharge end to circulate treatment fluid and avoid leakage. The assembly includes a member defining a fluid passage within the interior surface of a workpiece which is connected to a treating liquid feed channel and a treating liquid discharge channel. Advantageously, a washing fluid inlet is provided to permit a workpiece to be both treated and washed at the same workstation. The assembly may be used with a cover as an additional means to avoid leakage.

摘要翻译： 改进的表面处理系统，组装，工作站和电镀方法等。 组件包括沿着处理液排出端的抽吸泵，以循环处理流体并避免泄漏。 组件包括在工件的内表面内限定流体通道的构件，其连接到处理液体进料通道和处理液体排出通道。 有利地，提供洗涤流体入口以允许工件在相同的工作站处理和洗涤。 该组件可以与盖一起用作附加装置以避免泄漏。

公开(公告)号：US5028986A

公开(公告)日：1991-07-02

申请号：US288955

申请日：1988-12-23

申请人： Toshio Sugano ,  Kohji Nagaoka ,  Seiichiro Tsukui ,  Yoshiaki Wakashima ,  Michio Tanimoto ,  Masayuki Watanabe ,  Suguru Sakaguchi ,  Kunihiko Nishi ,  Aizo Kaneda ,  Kohji Serizawa ,  Michiharu Honda ,  Tohru Yoshida ,  Takeshi Komaru ,  Atsushi Nakamura

发明人： Toshio Sugano ,  Kohji Nagaoka ,  Seiichiro Tsukui ,  Yoshiaki Wakashima ,  Michio Tanimoto ,  Masayuki Watanabe ,  Suguru Sakaguchi ,  Kunihiko Nishi ,  Aizo Kaneda ,  Kohji Serizawa ,  Michiharu Honda ,  Tohru Yoshida ,  Takeshi Komaru ,  Atsushi Nakamura

IPC分类号： G11C5/00 ,  H01L23/498 ,  H01L25/065 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H05K3/36

CPC分类号： G11C5/02 ,  G11C5/00 ,  G11C5/06 ,  H01L23/49805 ,  H01L25/0657 ,  H01L2224/16 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06579 ,  H01L2225/06596 ,  H01L2924/07811 ,  H01L2924/09701 ,  H05K1/144 ,  H05K1/182 ,  H05K3/3421 ,  H05K3/363

摘要： There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and a large capacity while minimizing the mounting area. In order to achieve this memory, the TAB (Tape Automated Bonding) of the prior art is mounted on an electrically conductive connector, and a plurality of structures composed of the TAB and the connector are stacked. Moreover, the connector mounting the TAB thereon is constructed such that the independent terminals of the stacked TABs may not be shorted.

摘要翻译： 存在增加需要大容量存储器的器件的面积的趋势，其由半导体存储器占据。 这种趋势阻碍了设备尺寸的减小。 本发明旨在提供一种能够在最小化安装面积的同时具有高集成度，高密度和大容量的存储器。 为了实现这种记忆，现有技术的TAB（磁带自动接合）被安装在导电连接器上，并且由TAB和连接器组成的多个结构被堆叠。 此外，将TAB安装在其上的连接器构造成使得堆叠的TAB的独立端子可能不会短路。