公开(公告)号：US20100079359A1

公开(公告)日：2010-04-01

申请号：US12570662

申请日：2009-09-30

申请人： Yasumitsu Kunoh ,  Yasuhiko Nomura

发明人： Yasumitsu Kunoh ,  Yasuhiko Nomura

IPC分类号： H01S5/40 ,  G09G3/20

CPC分类号： G09G3/002 ,  B82Y20/00 ,  G09G3/3406 ,  G09G3/346 ,  G09G2300/0452 ,  G09G2310/0235 ,  H01S5/34333 ,  H01S5/4031 ,  H01S5/4087 ,  H04N9/3161

摘要： This semiconductor laser device includes a substrate, a blue semiconductor laser element, formed on the surface of a substrate, including a first active layer made of a nitride-based semiconductor and having a first major surface of a non-C plane and a green semiconductor laser element, formed on the surface of the substrate, including a second active layer made of a nitride-based semiconductor and having a second major surface of a surface orientation substantially identical to the non-C plane.

摘要翻译： 该半导体激光器件包括形成在基板表面上的基板，蓝色半导体激光元件，其包括由氮化物类半导体构成的第一有源层，具有非C面的第一主表面和绿色半导体 激光元件，其形成在所述基板的表面上，所述激光元件包括由氮化物基半导体制成的第二有源层，并且具有与所述非C平面基本相同的表面取向的第二主表面。

公开(公告)号：US20090174035A1

公开(公告)日：2009-07-09

申请号：US12402196

申请日：2009-03-11

申请人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L27/14 ,  H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2231 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

摘要翻译： 半导体器件包括由至少两种III族元素和氮形成的半导体衬底，形成在半导体衬底上的有源层和形成在半导体衬底的表面上并形成在半导体衬底和第二衬底之间的氮化物半导体层 活动层 氮化物半导体层由半导体衬底的相同构成元件形成。 氮化物半导体层的III族元素中的最轻元素的组成比高于半导体衬底的相应元素的组成比。

公开(公告)号：US20080315221A1

公开(公告)日：2008-12-25

申请号：US12139807

申请日：2008-06-16

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L33/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

公开(公告)号：US20070223548A1

公开(公告)日：2007-09-27

申请号：US11723642

申请日：2007-03-21

申请人： Hiroki Ohbo ,  Yasuyuki Bessho ,  Kazushi Mori ,  Yasuhiko Nomura

发明人： Hiroki Ohbo ,  Yasuyuki Bessho ,  Kazushi Mori ,  Yasuhiko Nomura

IPC分类号： H01S5/00

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01S5/0021 ,  H01S5/0222 ,  H01S5/028 ,  H01S5/32341 ,  H01L2924/00014

摘要： In a semiconductor laser device including a package for airtight sealing, and a semiconductor laser element provided in the package, a moisture concentration inside the package is 2500 ppm or less and arithmetic mean roughness in at least one portion of an inner surface of the package is 0.3 μm or less.

摘要翻译： 在包括用于气密密封的封装的半导体激光器件和设置在封装中的半导体激光元件中，封装内的水分浓度为2500ppm以下，封装的内表面的至少一部分的算术平均粗糙度为 0.3毫米以下。

公开(公告)号：US20070057337A1

公开(公告)日：2007-03-15

申请号：US11518235

申请日：2006-09-11

申请人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Takashi Kano ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L27/14

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2231 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

摘要翻译： 半导体器件包括由至少两种III族元素和氮形成的半导体衬底，形成在半导体衬底上的有源层和形成在半导体衬底的表面上并形成在半导体衬底和第二衬底之间的氮化物半导体层 活动层 氮化物半导体层由半导体衬底的相同构成元件形成。 氮化物半导体层的III族元素中的最轻元素的组成比高于半导体衬底的相应元素的组成比。

公开(公告)号：US20060227838A1

公开(公告)日：2006-10-12

申请号：US11390460

申请日：2006-03-28

申请人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

发明人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

IPC分类号： H01S5/00

CPC分类号： H01S5/4043 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/4087 ,  H01L2924/00014

摘要： A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

公开(公告)号：US20060045156A1

公开(公告)日：2006-03-02

申请号：US11215066

申请日：2005-08-31

申请人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono

发明人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono

IPC分类号： H01S5/00

CPC分类号： H01S5/4025 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01S5/4087 ,  H01L2924/00014

摘要： A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN substrate. Each of the red semiconductor laser device and the infrared semiconductor laser device is manufactured by forming semiconductor layers on a GaAs substrate. The modulus of elasticity of GaAs is smaller than the modulus of elasticity of GaN. The length of each of the red semiconductor laser device and the infrared semiconductor laser device is longer than the length of the blue-violet semiconductor laser device.

摘要翻译： 在半导体激光装置中使用的单芯片半导体激光装置具有将红色半导体激光装置和红外半导体激光装置堆叠在蓝紫色半导体激光装置上的结构。 通过在GaN衬底上形成半导体层来制造蓝紫色半导体激光器件。 通过在GaAs衬底上形成半导体层来制造红色半导体激光器件和红外半导体激光器件。 GaAs的弹性模量小于GaN的弹性模量。 红色半导体激光器件和红外半导体激光器件的长度比蓝紫色半导体激光器件的长度长。

公开(公告)号：US06954478B2

公开(公告)日：2005-10-11

申请号：US10356504

申请日：2003-02-03

申请人： Yasuhiko Nomura ,  Takashi Kano

发明人： Yasuhiko Nomura ,  Takashi Kano

IPC分类号： H01S5/20 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

摘要翻译： 获得能够延长寿命的氮化物系半导体激光装置。 该氮化物系半导体激光装置包括由第一导电型氮化物系半导体构成的第一包层，形成在第一包层上的由氮化物系半导体和第二包层构成的发光层， 发射层，由第二导电型氮化物基半导体组成，而发射层包括发射光的有源层，用于限制光的导光层和布置在有源层和导光层之间的载流子阻挡层，具有 比导光层更大的带隙。

公开(公告)号：US20050221590A1

公开(公告)日：2005-10-06

申请号：US11080398

申请日：2005-03-16

申请人： Takashi Kano ,  Tsutomu Yamaguchi ,  Hiroaki Izu ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Takashi Kano ,  Tsutomu Yamaguchi ,  Hiroaki Izu ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/76 ,  H01L33/32 ,  H01S5/00 ,  H01S5/223 ,  H01S5/343

CPC分类号： H01L21/0243 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0075 ,  H01L33/025

摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

摘要翻译： 提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法 用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。 在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。 每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。

公开(公告)号：US20050191775A1

公开(公告)日：2005-09-01

申请号：US11114193

申请日：2005-04-26

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L21/285 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/343 ,  H01L21/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.