公开(公告)号：US20070272944A1

公开(公告)日：2007-11-29

申请号：US11711711

申请日：2007-02-28

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L31/00

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 因此，可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US20060035447A1

公开(公告)日：2006-02-16

申请号：US11199597

申请日：2005-08-08

申请人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

发明人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

IPC分类号： H01L21/20 ,  G12B21/02

CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/3063 ,  H01L21/30635

摘要： A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.

摘要翻译： 一种制造半导体衬底的方法包括在第一单晶半导体上生长第二单晶半导体的生长步骤，在第二单晶半导体上形成阻挡层的阻挡层形成步骤以及产生晶体缺陷的松弛步骤 在比阻挡层更深的部分放松作用在第二单晶半导体上的应力。 阻挡层包括例如多孔层，并且防止在比阻挡层更深的部分处的晶体缺陷传播到第二单晶半导体的表面。

公开(公告)号：US20050109388A1

公开(公告)日：2005-05-26

申请号：US10971130

申请日：2004-10-25

申请人： Tsutomu Murakami ,  Shoji Nishida

发明人： Tsutomu Murakami ,  Shoji Nishida

IPC分类号： H01L31/04 ,  H01L31/00 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/03682 ,  H01L31/077 ,  H01L31/182 ,  Y02B10/12 ,  Y02E10/546 ,  Y02P70/521

摘要： There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.

摘要翻译： 提供一种光电器件，其中在沉积在衬底上的薄膜半导体中形成至少一个pin-junction，所述衬底包括：包括多晶硅的衬底; 以及通过液相生长在基底上形成的多晶硅层，其中多晶硅层的至少一部分表面具有由小面表面构成的凹凸。 光伏器件由于不存在优选的不均匀性而导致光电转换效率的降低，由于使用昂贵的材料而导致的成本增加，并且光电器件的生产量降低，并且具有优选的特性和高的生产率。

公开(公告)号：US06534336B1

公开(公告)日：2003-03-18

申请号：US09572940

申请日：2000-05-18

申请人： Masaaki Iwane ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Masaaki Iwane ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2100

CPC分类号： H01L31/1892 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/056 ,  H01L31/1804 ,  H01L31/184 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a production method of a photoelectric conversion device, which comprises a step of forming an uneven shape on a surface of a substrate, a step of providing a separation layer maintaining the uneven shape on the substrate, a step of forming a semiconductor film maintaining the uneven shape on the separation layer, and a step of separating the semiconductor film from the substrate at the separation layer, wherein the step of forming the uneven shape on the surface of the substrate is a step of forming the substrate having the uneven shape on the surface by anisotropic etching of the substrate with the separation layer remaining after the separation. The present invention also provides a photoelectric conversion device produced by the above method.

摘要翻译： 本发明提供了一种光电转换装置的制造方法，其特征在于，包括在基板的表面上形成不均匀的形状的步骤，在基板上设置保持凹凸形状的分离层的工序，形成半导体 在分离层上保持不均匀形状的膜，以及在分离层处分离半导体膜与基板的步骤，其中在基板的表面上形成不均匀形状的步骤是形成具有不平坦的基板的步骤 通过分离后残留分离层的基板的各向异性蚀刻在表面上形成。 本发明还提供一种通过上述方法制造的光电转换装置。

公开(公告)号：US06391743B1

公开(公告)日：2002-05-21

申请号：US09401775

申请日：1999-09-22

申请人： Masaaki Iwane ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

发明人： Masaaki Iwane ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

IPC分类号： H01L2130

CPC分类号： H01L31/072 ,  H01L21/67092 ,  H01L21/76254 ,  H01L2221/68363 ,  Y02E10/50

摘要： There is disclosed a method of producing a photoelectric conversion device comprising the steps of forming a semiconductor substrate comprising a first and a second semiconductor layers with a separation layer therebetween; bonding a support substrate to a surface of the second semiconductor layer opposite to the separation-layer-side surface to form a bonded substrate; separating the first and the second semiconductor layers by the separation layer; and producing a photoelectric conversion device in the second semiconductor layer, wherein when bonding the semiconductor substrate and the support substrate to each other, at least a portion is formed in the bonded substrate in which at least a part of end portions of the semiconductor substrate and the support substrate is not bonded to the other substrate and a fluid is jetted against a side surface of the bonded substrate, thereby separating the first and the second semiconductor layers. The method makes it possible to separate a bonded substrate with a high yield, thereby supplying photoelectric conversion devices with a high quality at a low production cost.

摘要翻译： 公开了一种制造光电转换装置的方法，包括以下步骤：形成包括第一和第二半导体层的半导体衬底，其间具有分离层; 将支撑基板接合到与分离层侧表面相对的第二半导体层的表面，以形成键合衬底; 通过分离层分离第一和第二半导体层; 以及在所述第二半导体层中制造光电转换器件，其中当将所述半导体衬底和所述支撑衬底彼此接合时，至少一部分形成在所述键合衬底中，其中所述半导体衬底和所述支撑衬底的至少一部分端部和 支撑基板不与另一个基板接合，并且流体相对于键合衬底的侧表面喷射，从而分离第一和第二半导体层。 该方法可以以高产率分离粘合的基片，从而以低的生产成本提供高质量的光电转换装置。

公开(公告)号：US06100166A

公开(公告)日：2000-08-08

申请号：US993034

申请日：1997-12-18

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida ,  Kenji Yamagata

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida ,  Kenji Yamagata

IPC分类号： B28D5/00 ,  G02F1/1362 ,  H01L21/18 ,  H01L21/20 ,  H01L21/304 ,  H01L21/66 ,  H01L31/068 ,  H01L31/18 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76259 ,  B28D5/00 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/304 ,  H01L21/76254 ,  H01L22/00 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  G02F1/136277 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

公开(公告)号：US5403771A

公开(公告)日：1995-04-04

申请号：US190584

申请日：1994-02-02

申请人： Shoji Nishida ,  Takao Yonehara

发明人： Shoji Nishida ,  Takao Yonehara

IPC分类号： H01L31/0368 ,  H01L31/0392 ,  H01L31/0745 ,  H01L31/077 ,  H01L31/18 ,  H01L21/20 ,  H01L21/3205

CPC分类号： H01L31/0745 ,  H01L31/03682 ,  H01L31/03921 ,  H01L31/077 ,  H01L31/1804 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for effectively producing an inexpensive solar cell by using a metallic substrate and growing a polycrystal semiconductor layer of a large crystal grain size. And a process for effectively producing a high quality and inexpensive solar cell by forming a polycrystal semiconductor layer of a large crystal grain size and with a reduced defect level density in grain boundaries on a polycrystal semiconductor layer of a small crystal grain size which serves as a crystal seed.

摘要翻译： 一种通过使用金属基板有效地生产廉价太阳能电池并生长大晶粒尺寸的多晶半导体层的方法。 以及通过在小晶粒尺寸的多晶半导体层上形成大晶粒尺寸的多晶半导体层和晶粒边界的缺陷水平密度降低来有效地生产高质量和廉价的太阳能电池的方法，其作为 晶种。

公开(公告)号：US20100053126A1

公开(公告)日：2010-03-04

申请号：US12549456

申请日：2009-08-28

申请人： Tamaki Kobayashi ,  Shoji Nishida ,  Takuto Moriguchi ,  Takeo Tsukamoto

发明人： Tamaki Kobayashi ,  Shoji Nishida ,  Takuto Moriguchi ,  Takeo Tsukamoto

IPC分类号： G09G5/00 ,  H01J1/02 ,  H01J1/62

CPC分类号： H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30492 ,  H01J2201/3165 ,  H01J2329/0426 ,  H01J2329/0471 ,  H01J2329/0489

摘要： An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm.

摘要翻译： 电子发射装置包括硼化镧多晶膜，构成多晶膜的微晶尺寸等于或大于2.5nm且等于或小于100nm，优选多晶膜的膜厚度相等 至或小于100nm。

公开(公告)号：US20080271783A1

公开(公告)日：2008-11-06

申请号：US12169597

申请日：2008-07-08

申请人： Tsutomu Murakami ,  Shoji Nishida

发明人： Tsutomu Murakami ,  Shoji Nishida

IPC分类号： H01L31/00

CPC分类号： H01L31/02363 ,  H01L31/03682 ,  H01L31/077 ,  H01L31/182 ,  Y02B10/12 ,  Y02E10/546 ,  Y02P70/521

摘要： There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.

摘要翻译： 提供一种光电器件，其中在沉积在衬底上的薄膜半导体中形成至少一个pin-junction，所述衬底包括：包括多晶硅的衬底; 以及通过液相生长在基底上形成的多晶硅层，其中多晶硅层的至少一部分表面具有由小面表面构成的凹凸。 光伏器件由于不存在优选的不均匀性而导致光电转换效率的降低，由于使用昂贵的材料而导致的成本增加，并且光电器件的生产量降低，并且具有优选的特性和高的生产率。

公开(公告)号：US20050087226A1

公开(公告)日：2005-04-28

申请号：US10957577

申请日：2004-10-05

申请人： Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

发明人： Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

IPC分类号： H01L21/28 ,  H01L31/00 ,  H01L31/04

CPC分类号： H01L31/022425 ,  Y02E10/50

摘要： The method of arranging an electrode according to the present invention includes: arranging an electrode material (103) for forming a eutectic with silicon on a silicon base (101) having unevenness; heating the silicon base (101) at a temperature equal to or higher than a eutectic temperature of the silicon and the electrode material (103); and cooling the silicon base (101) to flatten the unevenness on a surface of the silicon base just under the arranged electrode material (103). The present invention can provide a method of arranging an electrode on an uneven surface, which is a simple method and enables mass-production, and more particularly a method of arranging an electrode on a surface of a solar cell which can realize high efficiency of the solar cell.

摘要翻译： 根据本发明的电极布置方法包括：在具有不平坦度的硅基底（101）上布置用于与硅形成共晶的电极材料（103）; 在等于或高于硅和电极材料（103）的共晶温度的温度下加热硅基底（101）; 并且冷却硅基底（101）以使正好在布置的电极材料（103）下面的硅基底的表面上的凹凸变平。 本发明可以提供一种在不平坦表面上设置电极的方法，这是一种简单的方法并且可以批量生产，更具体地说，一种在太阳能电池的表面上设置电极的方法，其可以实现高效率 太阳能电池。