公开(公告)号：US20200321280A1

公开(公告)日：2020-10-08

申请号：US16957159

申请日：2018-12-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Toshimitsu OBONAI ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L23/532 ,  H01L21/265 ,  H01L21/02 ,  H01L21/263

Abstract: A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.

公开(公告)号：US20200227257A1

公开(公告)日：2020-07-16

申请号：US16773741

申请日：2020-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke KUROSAKI ,  Yasutaka NAKAZAWA ,  Kenichi OKAZAKI

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L21/28

Abstract: To provide a novel method for manufacturing a semiconductor device. To provide a method for manufacturing a highly reliable semiconductor device at relatively low temperature. The method includes a first step of forming a first oxide semiconductor film in a deposition chamber and a second step of forming a second oxide semiconductor film over the first oxide semiconductor film in the deposition chamber. Water vapor partial pressure in an atmosphere in the deposition chamber is lower than water vapor partial pressure in atmospheric air. The first oxide semiconductor film and the second oxide semiconductor film are formed such that the first oxide semiconductor film and the second oxide semiconductor film each have crystallinity. The second oxide semiconductor film is formed such that the crystallinity of the second oxide semiconductor film is higher than the crystallinity of the first oxide semiconductor film.

公开(公告)号：US20190355764A1

公开(公告)日：2019-11-21

申请号：US16522912

申请日：2019-07-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US20180164625A1

公开(公告)日：2018-06-14

申请号：US15890404

申请日：2018-02-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toru TANABE ,  Takahiro FUKUTOME ,  Koji MORIYA ,  Daisuke KUROSAKI ,  Masakatsu OHNO

IPC: G02F1/1333 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1368 ,  G06F3/044 ,  G06F3/041 ,  G02F1/137

CPC classification number: G02F1/13338 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/1368 ,  G02F1/137 ,  G02F2001/133334 ,  G02F2201/121 ,  G02F2201/123 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103

Abstract: A liquid crystal display device that is not influenced by a noise in obtaining positional information can be provided. The liquid crystal display device includes a first substrate provided with a pixel electrode and a common electrode with a first insulating film interposed therebetween. The pixel electrode and the common electrode partly overlap with each other. The liquid crystal display device further includes a second substrate provided with a pair of electrodes, a resin film covering the pair of electrodes, and a conductive film on the resin film. The pair of electrodes partly overlap with each other with a second insulating film interposed therebetween. The liquid crystal display device further includes a liquid crystal layer between the conductive film on the second substrate side and the pixel electrode and the common electrode on the first substrate side. A predetermined potential is supplied to the conductive film.

公开(公告)号：US20180145095A1

公开(公告)日：2018-05-24

申请号：US15815985

申请日：2017-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yasutaka NAKAZAWA

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  H01L21/02 ,  H01L29/786

Abstract: A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. A display device includes a transistor and a capacitor. The transistor includes a first insulating layer, a first semiconductor layer in contact with the first insulating layer, a second insulating layer in contact with the first semiconductor layer, and a first conductive layer electrically connected to the first semiconductor layer via an opening portion provided in the second insulating layer. The capacitor includes a second conductive layer in contact with the first insulating layer, the second insulating layer in contact with the second conductive layer, and the first conductive layer in contact with the second insulating layer. The second conductive layer includes a composition similar to that of the first semiconductor layer. The first conductive layer and the second conductive layer are configured to transmit visible light.

公开(公告)号：US20180083048A1

公开(公告)日：2018-03-22

申请号：US15819201

申请日：2017-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Masami JINTYOU ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400° C. to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.

公开(公告)号：US20170186843A1

公开(公告)日：2017-06-29

申请号：US15391186

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu OBONAI ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Takashi HAMOCHI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: H01L29/24 ,  C04B35/453 ,  C04B35/622 ,  H01L29/786

CPC classification number: H01L29/24 ,  C03C17/245 ,  C03C2217/23 ,  C03C2218/151 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US20170170325A1

公开(公告)日：2017-06-15

申请号：US15372554

申请日：2016-12-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Toshimitsu OBONAI ,  Hiroshi KANEMURA ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L21/465 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/413 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/78696

Abstract: An oxide semiconductor film contains In, M (M is Al, Ga, Y, or Sn), and Zn and includes a region with a film density higher than or equal to 6.3 g/cm3 and lower than 6.5 g/cm3. Alternatively, the oxide semiconductor film contains In, M (M is Al, Ga, Y, or Sn), and Zn and includes a region with etching at an etching rate higher than or equal to 10 nm/min and lower than or equal to 45 nm/min when a phosphoric acid aqueous solution obtained by diluting 85 vol % phosphoric acid with water 100 times is used for etching.

公开(公告)号：US20170141234A1

公开(公告)日：2017-05-18

申请号：US15421657

申请日：2017-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/51 ,  H01L29/24 ,  H01L29/49

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device using a transistor including an oxide semiconductor. One embodiment of a semiconductor device including a transistor includes a gate electrode, first and second insulating films over the gate electrode, an oxide semiconductor film over the second insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. A third insulating film is provided over the transistor and a fourth insulating film is provided over the third insulating film. The third insulating film includes oxygen. The fourth insulating film includes nitrogen. The amount of oxygen released from the third insulating film is 1×1019/cm3 or more by thermal desorption spectroscopy, which is estimated as oxygen molecules. The amount of oxygen molecules released from the fourth insulating film is less than 1×1019/cm3.

公开(公告)号：US20150372146A1

公开(公告)日：2015-12-24

申请号：US14741961

申请日：2015-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki SHISHIDO ,  Satoru SAITO ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/04 ,  H01L29/24 ,  H01L29/06

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film, a first gate electrode, a second gate electrode, a first conductive film, and a second conductive film. The first gate electrode is electrically connected to the second gate electrode. The first conductive film and the second conductive film function as a source electrode and a drain electrode. The oxide semiconductor film includes a first region that overlaps with the first conductive film, a second region that overlaps with the second conductive film, and a third region that overlaps with a gate electrode and the third conductive film. The first region includes a first edge that is opposed to the second region. The second region includes a second edge that is opposed to the first region. The length of the first edge is shorter than the length of the second edge.

Abstract translation: 提供具有稳定电特性的半导体器件。 半导体器件包括氧化物半导体膜，第一栅电极，第二栅电极，第一导电膜和第二导电膜。 第一栅电极电连接到第二栅电极。 第一导电膜和第二导电膜用作源电极和漏电极。 氧化物半导体膜包括与第一导电膜重叠的第一区域，与第二导电膜重叠的第二区域和与栅电极和第三导电膜重叠的第三区域。 第一区域包括与第二区域相对的第一边缘。 第二区域包括与第一区域相对的第二边缘。 第一边缘的长度短于第二边缘的长度。