公开(公告)号：US20060173913A1

公开(公告)日：2006-08-03

申请号：US11275660

申请日：2006-01-23

申请人： Satoshi Aoyama

发明人： Satoshi Aoyama

IPC分类号： G06F17/00 ,  G06F7/00

CPC分类号： H04N1/32128 ,  G06F16/51 ,  H04N2201/3236

摘要： The file name of an image file as a saving target is acquired (S401). A hash value is calculated on the basis of the acquired file name (S402). The image file as the saving target is saved in association with the data of the hash value.

摘要翻译： 获取作为保存对象的图像文件的文件名（S401）。 基于获取的文件名计算散列值（S 402）。 作为保存目标的图像文件与散列值的数据相关联地保存。

公开(公告)号：US07001698B2

公开(公告)日：2006-02-21

申请号：US10712032

申请日：2003-11-14

申请人： Takaei Sasaki ,  Noriyuki Harashima ,  Satoshi Aoyama ,  Shouichi Sakamoto

发明人： Takaei Sasaki ,  Noriyuki Harashima ,  Satoshi Aoyama ,  Shouichi Sakamoto

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  C23F4/00 ,  H01J37/3266

摘要： A chromium-containing half-tone phase-shift photomask comprising coarse and dense patterns coexisting in a plane is prepared by a series of pattern-forming steps including forming a resist layer on a photomask blank, exposing and patterning said resist layer, developing, etching said photomask blank and removing said resist layer. Patterns for transferring onto a wafer are formed on the photomask blank by a dry-etching method comprising dry-etching a chromium-containing half-tone phase-shift film utilizing etching gas comprised of mixed gas including (a) reactive ion etching gas, containing an oxygen-containing gas and a halogen-containing gas, and (b) reducing gas added to the gas component (a).

摘要翻译： 通过一系列图案形成步骤制备包含在平面中共存的粗和密集图案的含铬半色调相移光掩模，包括在光掩模坯料上形成抗蚀剂层，曝光和图案化所述抗蚀剂层，显影，蚀刻 所述光掩模坯料和去除所述抗蚀剂层。 用于转印到晶片上的图案通过干蚀刻方法形成在光掩模坯料上，该方法包括使用包括（a）反应性离子蚀刻气体的混合气体的蚀刻气体干法蚀刻含铬半色调相移膜，所述混合气体包含 含氧气体和含卤素气体，（b）还原气体成分（a）中的气体。

公开(公告)号：US20050260506A1

公开(公告)日：2005-11-24

申请号：US11133233

申请日：2005-05-20

申请人： Satoshi Aoyama

发明人： Satoshi Aoyama

IPC分类号： G03C5/00 ,  G03F1/30 ,  G03F1/68 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F1/44 ,  G03F1/30

摘要： A phase shift mask includes a quartz substrate having a main surface partially dug, and a Cr film deposited on the main surface. The dug portion includes an undercut provided such that the Cr film partially serves as an eaves, and the Cr film has a π opening exposing a portion of the dug portion, and a first subopening exposing an end of the dug portion.

摘要翻译： 相移掩模包括具有部分切割的主表面的石英基板和沉积在主表面上的Cr膜。 挖掘部分包括设置成使得Cr膜部分地用作屋檐的底切，并且Cr膜具有暴露部分挖出部分的pi开口，以及暴露出挖出部分的端部的第一开口。

公开(公告)号：US20050014038A1

公开(公告)日：2005-01-20

申请号：US10788294

申请日：2004-03-01

申请人： Satoshi Aoyama ,  Naoki Ito ,  Masahiko Iijima

发明人： Satoshi Aoyama ,  Naoki Ito ,  Masahiko Iijima

IPC分类号： B01D53/22 ,  B01D71/02 ,  C01B3/56 ,  H01M8/00 ,  H01M8/02 ,  H01M8/04 ,  H01M8/06

CPC分类号： B01D53/22 ,  B01D53/228 ,  B01D63/08 ,  B01D2257/108 ,  H01M8/04089 ,  H01M8/0612 ,  H01M8/0687

摘要： The object of the invention is to prevent reduction of hydrogen permeability and deterioration of a hydrogen separation member in a hydrogen separation device that uses an oxygen-containing as like a cathode off gas as a purge gas. A hydrogen separation device 50 includes a reformed gas passage 51, a purge gas passage 52, and a hydrogen separation membrane 53. A supply of a reformed gas flows through the reformed gas passage 51. A cathode off gas discharged from cathodes of fuel cells 60 flows through the purge gas passage 52 to carry hydrogen transmitted through the hydrogen separation membrane 53 to anodes of the fuel cells 60. A specific section of the hydrogen separation membrane 53 close to the supply of the cathode off gas has enhanced heat resistance. This structure effectively prevents deterioration of the hydrogen separation membrane 53, even when hydrogen transmitted through the hydrogen separation membrane 53 reacts with unreacted oxygen remaining in the cathode off gas to locally raise the temperature in the vicinity of the specific section close to the supply of the cathode off gas.

摘要翻译： 本发明的目的是防止使用含氧气体作为吹扫气体的阴极气体的氢分离装置中的氢气渗透性和氢分离构件的劣化。 氢分离装置50包括重整气体通道51，净化气体通道52和氢分离膜53.重整气体的供应流过重整气体通道51.从燃料电池60的阴极排出的阴极废气 流过净化气体通道52，将通过氢分离膜53传输的氢气输送到燃料电池60的阳极。靠近阴极废气供应的氢分离膜53的特定部分具有增强的耐热性。 该结构能够有效地防止氢分离膜53的劣化，即使通过氢分离膜53的氢与留在阴极废气中的未反应的氧反应，也能够局部地提高靠近供给的特定部附近的温度 阴极废气。

公开(公告)号：US20050012533A1

公开(公告)日：2005-01-20

申请号：US10889037

申请日：2004-07-13

申请人： Satoshi Aoyama ,  Atsuhiro Hayashi ,  Yasuhiko Takahashi

发明人： Satoshi Aoyama ,  Atsuhiro Hayashi ,  Yasuhiko Takahashi

IPC分类号： H03K19/0175 ,  G11C7/00 ,  H03H11/28 ,  H03H11/30 ,  H03K5/22 ,  H03K17/16 ,  H03K19/00 ,  H04L25/02

CPC分类号： H04L25/0278 ,  H03H11/30

摘要： A plurality of sets of circuits are provided, each of which generates an impedance code through the use of an impedance control circuit in association with a resistive element connected to an external terminal, and each of which varies the impedance in accordance with such an impedance code. The impedance control circuit includes an impedance comparator which is formed equivalently to the resistive element and the plurality of sets of circuits, and which performs an impedance comparison with each of a plurality of replica circuits to form an up signal that increases the impedance and a down signal that decreases the impedance. Counters are provided adjacent to the individuals of the plurality of sets of circuits to thereby generate the impedance codes in response to the up signal and the down signal.

摘要翻译： 提供多组电路，每组电路通过与连接到外部端子的电阻元件相关联地使用阻抗控制电路产生阻抗代码，并且每个电路根据这种阻抗代码改变阻抗 。 阻抗控制电路包括阻抗比较器，该阻抗比较器等效于电阻元件和多组电路，并且与多个复制电路中的每一个执行阻抗比较，以形成增加阻抗的向上信号和向下 信号降低阻抗。 提供与多组电路的个体相邻的计数器，从而响应于上升信号和下降信号而产生阻抗代码。

公开(公告)号：US20050011862A1

公开(公告)日：2005-01-20

申请号：US10712032

申请日：2003-11-14

申请人： Takaei Sasaki ,  Noriyuki Harashima ,  Satoshi Aoyama ,  Shouichi Sakamoto

发明人： Takaei Sasaki ,  Noriyuki Harashima ,  Satoshi Aoyama ,  Shouichi Sakamoto

IPC分类号： H01L21/302 ,  C23F4/00 ,  G03F1/32 ,  G03F1/68 ,  G03F1/80 ,  H01L21/306 ,  H01L21/3065 ,  C23F1/00

CPC分类号： G03F1/32 ,  C23F4/00 ,  H01J37/3266

摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.

摘要翻译： 干蚀刻方法包括干法蚀刻作为含铬半色调相移膜的金属薄膜的步骤，其特征在于，使用包括（a）和（c）的混合气体作为蚀刻气体， 在对金属薄膜进行干蚀刻的工序中，含有含氧气体和含卤素气体的反应离子蚀刻气体和（b）添加到气体成分（a）中的还原气体。 干蚀刻方法允许通过在用于含铬半色调相移掩模的光掩模坯料上形成要转印到晶片上的图案来生产半色调相移光掩模。 光掩模又可用于制造半导体电路。 该方法允许由于在平面中粗糙和致密图案的共存以及高精度图案蚀刻产品的生产而减小尺寸差异。

公开(公告)号：US06783877B2

公开(公告)日：2004-08-31

申请号：US09930989

申请日：2001-08-17

申请人： Takashi Shimazu ,  Satoshi Iguchi ,  Satoshi Aoyama ,  Koichi Numata ,  Kazuhisa Kunitake ,  Takeshi Nishikawa ,  Shuichi Kubo ,  Satoshi Yamazaki

发明人： Takashi Shimazu ,  Satoshi Iguchi ,  Satoshi Aoyama ,  Koichi Numata ,  Kazuhisa Kunitake ,  Takeshi Nishikawa ,  Shuichi Kubo ,  Satoshi Yamazaki

IPC分类号： H01M804

CPC分类号： H01M8/0612 ,  B01B1/005 ,  B01J19/0006 ,  B01J19/0013 ,  B01J19/0026 ,  B01J19/088 ,  B01J19/2485 ,  B01J19/26 ,  B01J2208/00716 ,  B01J2219/00006 ,  B01J2219/00063 ,  B01J2219/00087 ,  B01J2219/00117 ,  B01J2219/00123 ,  B01J2219/00157 ,  B01J2219/00159 ,  B01J2219/00162 ,  B01J2219/00164 ,  B01J2219/00166 ,  B01J2219/00186 ,  B01J2219/00198 ,  B01J2219/00211 ,  B01J2219/00216 ,  B01J2219/00218 ,  B01J2219/00231 ,  B01J2219/00236 ,  B01J2219/00247 ,  B01J2219/0896 ,  B01J2219/182 ,  B01J2219/1943 ,  C01B3/38 ,  C01B3/382 ,  C01B3/48 ,  C01B3/583 ,  C01B2203/0233 ,  C01B2203/0244 ,  C01B2203/0261 ,  C01B2203/0277 ,  C01B2203/0283 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/0805 ,  C01B2203/0811 ,  C01B2203/0822 ,  C01B2203/0827 ,  C01B2203/0844 ,  C01B2203/0861 ,  C01B2203/0866 ,  C01B2203/0877 ,  C01B2203/0883 ,  C01B2203/0894 ,  C01B2203/1041 ,  C01B2203/1047 ,  C01B2203/1064 ,  C01B2203/1076 ,  C01B2203/1082 ,  C01B2203/1247 ,  C01B2203/127 ,  C01B2203/1282 ,  C01B2203/1288 ,  C01B2203/142 ,  C01B2203/143 ,  C01B2203/148 ,  C01B2203/16 ,  C01B2203/1604 ,  C01B2203/1614 ,  C01B2203/1628 ,  C01B2203/1657 ,  C01B2203/1685 ,  C01B2203/169 ,  C01B2203/1695 ,  C01B2203/80 ,  C01B2203/82 ,  F01N2240/30 ,  H01M8/04223 ,  H01M8/04302 ,  H01M8/241 ,  H01M8/2457 ,  Y02P20/128

摘要： In a fuel cell system 10, a cracking unit 20 is provided upstream of a reformer 36. When the cracking unit 20 is supplied with oxygen and gasoline as a hydrocarbon-based fuel, the gasoline is partially oxidized and decomposed using oxidation-generated heat to give a hydrocarbon with a lower carbon number. The hydrocarbon with the lower carbon number obtained by such gasoline pyrolysis is fed to the reformer 36 and supplied to a reforming reaction zone.

摘要翻译： 在燃料电池系统10中，在重整器36的上游设置有裂解装置20.当以裂解装置20供给作为烃类燃料的氧气和汽油时，汽油被氧化生成的热量部分氧化分解， 得到碳数较少的烃。 通过这种汽油热分解获得的具有较低碳原子数的烃被供给至重整器36并供给至重整反应区。

公开(公告)号：US06685848B1

公开(公告)日：2004-02-03

申请号：US09361158

申请日：1999-07-27

申请人： Takaei Sasaki ,  Noriyuki Harashima ,  Satoshi Aoyama ,  Shouichi Sakamoto

发明人： Takaei Sasaki ,  Noriyuki Harashima ,  Satoshi Aoyama ,  Shouichi Sakamoto

IPC分类号： C23F100

CPC分类号： G03F1/32 ,  C23F4/00 ,  H01J37/3266

摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.

摘要翻译： 干蚀刻方法包括干法蚀刻作为含铬半色调相移膜的金属薄膜的步骤，其特征在于，使用包括（a）和（c）的混合气体作为蚀刻气体， 在对金属薄膜进行干蚀刻的工序中，含有含氧气体和含卤素气体的反应性离子蚀刻气体和（b）添加到气体成分（a）中的还原气体。 干蚀刻方法允许通过在用于含铬半色调相移掩模的光掩模坯料上形成要转印到晶片上的图案来生产半色调相移光掩模。 光掩模又可用于制造半导体电路。 该方法允许由于在平面中粗糙和致密图案的共存以及高精度图案蚀刻产品的生产而减小尺寸差异。

公开(公告)号：US06455008B1

公开(公告)日：2002-09-24

申请号：US09471483

申请日：1999-12-23

申请人： Satoshi Aoyama ,  Yasushi Araki

发明人： Satoshi Aoyama ,  Yasushi Araki

IPC分类号： G05B100

CPC分类号： C01B3/583 ,  C01B3/323 ,  C01B3/48 ,  C01B2203/0233 ,  C01B2203/0283 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/0811 ,  C01B2203/1052 ,  C01B2203/1076 ,  C01B2203/1241 ,  C01B2203/1276 ,  C01B2203/1288 ,  C01B2203/16 ,  C01B2203/1604 ,  C01B2203/1619 ,  C01B2203/1661 ,  C01B2203/1671 ,  C01B2203/169 ,  C01B2203/1695

摘要： A shift reaction section 32 is designed to have a maximum capacity of about 40% of the maximum capacity of reforming section 30. When hydrogen-rich gas is supplied to the shift reaction section 32 in excess of its maximum capacity, a blower 46 supplies air to the hydrogen-rich gas in an amount corresponding to the supply of hydrogen-rich gas, and oxidation reaction of carbon monoxide is performed in addition to the shift reaction. By controlling the amount of air supplied, the carbon monoxide concentration at the exit of the shift reaction section 32 is maintained at a concentration less than a predetermined value. As a result, a fuel reformer 20 can be made compact, and at the same time, the energy required to increase the temperature at the time of start up can be reduced.

摘要翻译： 变速反应部分32被设计成具有重整部分30的最大容量的大约40％的最大容量。当向转换反应部分32供应超过其最大容量的富氢气体时，鼓风机46供应空气 以相当于富氢气体供给的量加入到富氢气体中，除了转化反应之外还进行一氧化碳的氧化反应。 通过控制供给的空气量，变换反应部32的出口处的一氧化碳浓度保持在小于规定值的浓度。 结果，能够使燃料重整器20紧凑化，同时能够降低启动时的温度上升所需的能量。

公开(公告)号：US5616430A

公开(公告)日：1997-04-01

申请号：US518402

申请日：1995-08-15

申请人： Satoshi Aoyama

发明人： Satoshi Aoyama

IPC分类号： C01B3/38 ,  C01B3/56 ,  H01M8/04 ,  H01M8/06 ,  H01M8/18

CPC分类号： H01M8/04223 ,  B60L11/1894 ,  B60L11/1898 ,  H01M8/0612 ,  H01M8/0662 ,  B60L2240/36 ,  H01M8/04119 ,  Y02T90/34

摘要： While a fuel cell operates, a fuel cell system allows a carbon dioxide rich gas discharged from an anode of the fuel cell through consumption of hydrogen to be fed into a carbon dioxide recovery element of a carbon dioxide recovery unit. The carbon dioxide recovery element is packed with a zeolite, which absorbs and retains a polar substance CO.sub.2. When the fuel cell stops operation, a recovery element heating burner receives a supply of the hydrogen-containing carbon dioxide rich gas fed via a first exhaust conduit of the fuel cell and a supply of methanol from a methanol reservoir, and combusts hydrogen contained in the carbon dioxide rich gas as well as the supply of methanol. This keeps the zeolite packed in the carbon dioxide recovery element under a heating condition, which allows carbon dioxide previously absorbed and retained to be released from the zeolite. A reforming reaction unit of a methanol reformer and the fuel cell are filled with the released carbon dioxide fed therein.

摘要翻译： 当燃料电池工作时，燃料电池系统允许通过消耗氢气从二氧化碳回收装置的二氧化碳回收元件中排出从燃料电池的阳极排出的富含二氧化碳的气体。 二氧化碳回收元件填充有吸收并保留极性物质CO 2的沸石。 当燃料电池停止运行时，回收元件加热燃烧器接收经由燃料电池的第一排气管道供给的富含二氧化碳的气体的供应和从甲醇储存器供应的甲醇，并且燃烧包含在 富含二氧化碳的气体以及甲醇的供应。 这使得包装在二氧化碳回收元件中的沸石在加热条件下保持，这使得先前吸收并保留的二氧化碳从沸石中释放出来。 甲醇重整器和燃料电池的重整反应单元中填充有释放的二氧化碳。