公开(公告)号：US08119924B2

公开(公告)日：2012-02-21

申请号：US12295286

申请日：2007-03-30

申请人： Katsumi Abe ,  Kenichiro Fujii ,  Atsumasa Sawada

发明人： Katsumi Abe ,  Kenichiro Fujii ,  Atsumasa Sawada

IPC分类号： H05K1/00

CPC分类号： H05K1/0271 ,  H01L23/49822 ,  H01L23/4985 ,  H01L23/562 ,  H01L2224/05022 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/3511 ,  H05K1/0281 ,  H05K1/189 ,  H05K3/4614 ,  H05K3/4691 ,  H05K2201/0187 ,  H05K2201/10674 ,  H05K2201/2009 ,  H05K2203/302 ,  Y10T428/24777 ,  H01L2924/00 ,  H01L2224/05599

摘要： Stress concentration at the connecting portion of the electronic component and the curved board and the area around the connecting portion is suppressed. In a flexible wiring board, insulation layers (11, 13) and wiring layers (12, 15) are piled up alternately and wiring layers (12, 15) are via-connected each other. The board comprises reinforced area (10a) reinforced against external stress, bending area (10c) bending easier than the reinforced area (10a) by external stress, and a stress relaxation area (10b) provided in area between the reinforced area (10a) and the bending area (10c), bending easier than the reinforced area (10a) but not easier than the bending area (10c) by the external stress, and relaxing the stress carried from the bending area (10c) to the reinforced area (10a).

摘要翻译： 电子部件和弯曲板的连接部的应力集中以及连接部周围的区域被抑制。 在柔性布线板中，绝缘层（11,13）和布线层（12,15）交替堆叠，并且布线层（12,15）彼此通孔连接。 所述板包括加强区域（10a），抵抗外部应力增强，弯曲区域（10c）比外部应力比加强区域（10a）弯曲得更容易;以及应力松弛区域（10b），设置在加强区域（10a）和 所述弯曲区域（10c）比所述加强区域（10a）弯曲变得容易，但是通过外部应力不易弯曲区域（10c），并且缓和从所述弯曲区域（10c）向所述加强区域（10a）承受的应力， 。

公开(公告)号：US20110092016A1

公开(公告)日：2011-04-21

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/26 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US20110024741A1

公开(公告)日：2011-02-03

申请号：US12882404

申请日：2010-09-15

申请人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/26

CPC分类号： H01L29/7869

摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

摘要翻译： 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

公开(公告)号：US07863611B2

公开(公告)日：2011-01-04

申请号：US11269646

申请日：2005-11-09

申请人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L31/20

CPC分类号： H01L29/7869

摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

摘要翻译： 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

公开(公告)号：US20100194450A1

公开(公告)日：2010-08-05

申请号：US12679682

申请日：2008-11-11

申请人： Hisae Shimizu ,  Ryo Hayashi ,  Katsumi Abe

发明人： Hisae Shimizu ,  Ryo Hayashi ,  Katsumi Abe

IPC分类号： H03K3/00 ,  H01L29/786 ,  H01L33/00

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/0233 ,  H01L27/1225 ,  H01L29/7869

摘要： In a light-emitting display apparatus including a plurality of pixels each including a light-emitting element and a driving circuit of the light-emitting element, and the driving circuit includes a plurality of thin-film transistors connected in parallel, a threshold voltage of the thin-film transistor reversibly changes according to a voltage applied between a gate and a source or between the gate and a drain of each of the thin-film transistors, by selecting and switching the plurality of thin-film transistors TFT11 to TFT13, the threshold voltage of the thin-film transistors for supplying a current to the light-emitting element is held within a predetermined range.

摘要翻译： 在包括发光元件和发光元件的驱动电路的多个像素的发光显示装置中，驱动电路包括并联连接的多个薄膜晶体管，阈值电压 薄膜晶体管通过选择并切换多个薄膜晶体管TFT11至TFT13，根据施加在栅极和源极之间或每个薄膜晶体管的栅极和漏极之间的电压而可逆地改变， 用于向发光元件供给电流的薄膜晶体管的阈值电压保持在预定范围内。

公开(公告)号：US20100104964A1

公开(公告)日：2010-04-29

申请号：US12524213

申请日：2008-01-24

申请人： Makoto Koike ,  Katsumi Abe ,  Atsushi Takesue

发明人： Makoto Koike ,  Katsumi Abe ,  Atsushi Takesue

IPC分类号： G03G5/04 ,  G03G5/047

CPC分类号： G03G5/0614 ,  G03G5/0521 ,  G03G5/0607 ,  G03G5/0616 ,  G03G5/062

摘要： An object of the invention is to provide a photoreceptor for electrophotography which has a low residual potential in an initial stage, is inhibited from increasing in residual potential, is prevented from decreasing in charge potential, and undergoes little fatigue deterioration even upon repeated use. The invention relates to a photoreceptor for electrophotography which has a photosensitive layer containing a cyclic phenol sulfide represented by the following general formula (1): and one or more charge-transporting agents each having an arylamino group in the molecule, and which has excellent durability.

摘要翻译： 本发明的目的是提供一种用于电子照相的感光体，其在初始阶段具有低残留电位，被抑制增加残留电位，防止电荷电位降低，即使重复使用也几乎不会发生疲劳劣化。 本发明涉及一种电子照相用感光体，其具有含有下述通式（1）表示的环状苯酚硫化物的感光层和分子内各具有芳基氨基的一种或多种电荷输送剂，其耐久性优异 。

公开(公告)号：US20100053041A1

公开(公告)日：2010-03-04

申请号：US12548796

申请日：2009-08-27

申请人： Katsumi Abe ,  Kenji Takahashi ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Kenji Takahashi ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G3/30 ,  H04N5/222

CPC分类号： G09G3/325 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/0814 ,  G09G2300/0852 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2320/0223

摘要： A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ.

摘要翻译： 至少包括发光元件的像素电路和薄膜晶体管，其向发光元件提供根据发光元件的亮度 - 电流特性来控制灰度的第一电流，其中所述薄膜晶体管具有背面 至少一个驱动周期，其中薄膜晶体管将第一电流提供给发光元件;以及写入周期，其中第二电流在驱动周期之前被写入薄膜晶体管，以便通过第一 包括在驱动周期期间到薄膜晶体管的电流，并且通过改变在驱动周期和写入周期中施加到背栅电极的电压，使薄膜晶体管的栅极电压的电流能力不同。

公开(公告)号：US20100051937A1

公开(公告)日：2010-03-04

申请号：US12527622

申请日：2008-02-08

申请人： Nobuyuki Kaji ,  Ryo Hayashi ,  Hisato Yabuta ,  Katsumi Abe

发明人： Nobuyuki Kaji ,  Ryo Hayashi ,  Hisato Yabuta ,  Katsumi Abe

IPC分类号： H01L29/786 ,  H01L33/00

CPC分类号： H01L29/78696 ,  H01L29/105 ,  H01L29/7869

摘要： There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm.

摘要翻译： 提供了至少包括衬底，栅电极，栅极绝缘层，氧化物半导体层，源电极，漏电极和保护层的薄膜晶体管，其中氧化物半导体层是含有 元素In，Ga和Zn中的至少一种，氧化物半导体层的栅电极侧载流子密度高于其保护层侧载流子密度，氧化物半导体层的膜厚为30nm±15 nm。

公开(公告)号：US07515150B2

公开(公告)日：2009-04-07

申请号：US10942760

申请日：2004-09-16

申请人： Katsumi Abe ,  Masamichi Shimoda

发明人： Katsumi Abe ,  Masamichi Shimoda

IPC分类号： G09G5/00

CPC分类号： G09G3/3241 ,  G09G3/3275 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2310/027

摘要： A semiconductor device is capable of suppressing variations of a current or a voltage to be supplied to an external circuit. The semiconductor device has a plurality of unit areas arrayed in one direction, and components in the unit areas are arranged in the same shape and the same layout in the unit areas. A holding capacitor for holding a voltage is surrounded by an interconnect kept at ground potential. Interconnects at ground potential are inserted in areas where reference current interconnects for supplying reference currents to functional blocks (1-bit DCC circuit regions) and gradation digital data interconnects and storage timing signal interconnects cross each other vertically, the interconnects being disposed between these reference current interconnects, gradation digital data interconnects and storage timing signal interconnects.

摘要翻译： 半导体器件能够抑制要供给到外部电路的电流或电压的变化。 半导体器件具有沿一个方向排列的多个单位区域，并且单位区域中的部件在单位区域中以相同的形状和相同的布局布置。 用于保持电压的保持电容器被保持接地电位的互连件包围。 接地电位互连插入到用于向功能块（1位DCC电路区）提供参考电流的参考电流互连和色阶数字数据互连和存储定时信号互连垂直交叉的区域中，互连设置在这些参考电流 互连，灰度数字数据互连和存储定时信号互连。

公开(公告)号：US20090053633A1

公开(公告)日：2009-02-26

申请号：US12161964

申请日：2007-01-24

申请人： Shinya Nagai ,  Atsushi Takesue ,  Makoto Koike ,  Katsumi Abe ,  Takehiro Nakajima

发明人： Shinya Nagai ,  Atsushi Takesue ,  Makoto Koike ,  Katsumi Abe ,  Takehiro Nakajima

IPC分类号： G03G5/04

CPC分类号： G03G5/0618 ,  C07C211/54 ,  G03G5/0614 ,  G03G5/0696

摘要： An object of the invention is to provide: a p-terphenyl compound mixture useful as a charge-transporting agent which has improved solubility in organic solvents to thereby diminish a cracking phenomenon, which poses problems concerning photoreceptor characteristics, and can realize an electrophotographic photoreceptor having high sensitivity and high durability; and an electrophotographic photoreceptor employing the compound mixture. The invention relates to: a p-terphenyl compound mixture which includes two symmetric p-terphenyl compounds respectively represented by the following general formula (1) and general formula (2) and an asymmetric p-terphenyl compound represented by the following general formula (3) which has both a group of substituents of the compound represented by general formula (1) and a group of substituents of the compound represented by general formula (2); and an electrophotographic photoreceptor containing the compound mixture.

摘要翻译： 本发明的目的是提供：可用作电荷输送剂的对三联苯化合物混合物，其在有机溶剂中具有改善的溶解度从而减少裂纹现象，这导致关于感光体特性的问题，并且可以实现具有 高灵敏度和高耐用性; 和使用该化合物混合物的电子照相感光体。 本发明涉及：对三联苯化合物混合物，其包含分别由以下通式（1）和通式（2）表示的两个对称对三联苯化合物和由以下通式（3）表示的不对称对三联苯化合物 ），其具有由通式（1）表示的化合物的一组取代基和由通式（2）表示的化合物的取代基的一组; 和含有该化合物混合物的电子照相感光体。