公开(公告)号：US07456083B2

公开(公告)日：2008-11-25

申请号：US11069061

申请日：2005-03-02

申请人： Takashi Noma ,  Yoshinori Seki ,  Motoaki Wakui

发明人： Takashi Noma ,  Yoshinori Seki ,  Motoaki Wakui

IPC分类号： H01L21/301

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/544 ,  H01L24/10 ,  H01L24/13 ,  H01L24/97 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention is directed to an improvement of cutting accuracy in a cutting process when a semiconductor device attached with a supporting member is manufactured. The invention provides a manufacturing method of a semiconductor device where a semiconductor wafer attached with a glass substrate is cut with moving a rotation blade along a dicing region and has following features. A pair of alignment marks is formed facing each other over the dicing region on the semiconductor wafer. Then, when the rotation blade is to be aligned on a center of the dicing region, that is, on a centerline thereof in the cutting process, positions of the alignment marks are detected by a recognition camera, the centerline is calculated based on the detection result, and the rotation blade is aligned on the centerline to perform cutting.

摘要翻译： 本发明涉及当制造附着有支撑构件的半导体器件时，在切割过程中提高切割精度。 本发明提供一种半导体器件的制造方法，其中通过沿着切割区域移动旋转刀片来切割附着有玻璃基板的半导体晶片，并且具有以下特征。 在半导体晶片上的切割区域上形成一对对准标记。 然后，当切割区域的中心，即在切割过程中的中心线处，旋转刀片对准时，通过识别照相机检测对准标记的位置，基于检测计算中心线 结果，旋转叶片在中心线上对齐，以进行切割。

公开(公告)号：US07397134B2

公开(公告)日：2008-07-08

申请号：US11145176

申请日：2005-06-06

申请人： Takashi Noma

发明人： Takashi Noma

IPC分类号： H01L23/498

CPC分类号： H04N5/2253 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/48 ,  H01L27/14618 ,  H01L27/14683 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/013

摘要： The invention provides a package type semiconductor device and a manufacturing method thereof where reliability is improved without increasing a manufacturing cost. A resin layer and a supporting member are formed on a top surface of a semiconductor substrate formed with pad electrodes. Then, openings are formed penetrating the resin layer and the supporting member so as to expose the pad electrodes. Metal layers are then formed on the pad electrodes exposed in the openings, and conductive terminals are formed thereon. Finally, the semiconductor substrate is separated into semiconductor dice by dicing. When this semiconductor device is mounted on a circuit board (not shown), the conductive terminals of the semiconductor die and external electrodes of the circuit board are electrically connected with each other.

摘要翻译： 本发明提供一种封装型半导体器件及其制造方法，其中提高可靠性而不增加制造成本。 树脂层和支撑构件形成在形成有焊盘电极的半导体衬底的顶表面上。 然后，形成穿透树脂层和支撑部件的开口，以露出焊盘电极。 然后在暴露在开口中的焊盘电极上形成金属层，并在其上形成导电端子。 最后，通过切割将半导体衬底分成半导体芯片。 当该半导体器件安装在电路板（未示出）上时，半导体管芯的导电端子和电路板的外部电极彼此电连接。

公开(公告)号：US07379284B2

公开(公告)日：2008-05-27

申请号：US11426273

申请日：2006-06-23

申请人： Iwao Fukushi ,  Tomoaki Nishi ,  Takashi Noma

发明人： Iwao Fukushi ,  Tomoaki Nishi ,  Takashi Noma

IPC分类号： H02H3/00 ,  G05F1/00

CPC分类号： H02M3/1588 ,  H02M1/32 ,  Y02B70/1466

摘要： A self-excited DC-DC converter comprises a switching element that chops a direct-current input voltage; a smoothing circuit that smoothes the chopped voltage to generate a DC output voltage; a switching control signal generation circuit that generates a switching control signal for the on/off control of the switching element by comparing a feedback voltage of the output voltage and a comparison voltage; an output correction circuit that adjusts the comparison voltage according to an error between the feedback voltage and the reference voltage and, when the output current is in the overcurrent state, reduces the level of the comparison voltage; an overcurrent protection signal generation circuit that, when the output current is in an overcurrent state, generates an overcurrent protection signal for turning off the switching element regardless of the switching control signal; and a delay circuit that delays the overcurrent protection signal. Also, a switching control circuit is provided therein.

摘要翻译： 自激式DC-DC转换器包括切断直流输入电压的开关元件; 平滑电路，其使所述斩波电压平滑以产生DC输出电压; 切换控制信号生成电路，通过比较输出电压的反馈电压和比较电压，生成用于开关元件的导通/截止控制的开关控制信号; 输出校正电路，根据反馈电压和参考电压之间的误差调整比较电压，并且当输出电流处于过电流状态时，降低比较电压的电平; 过电流保护信号产生电路，当输出电流处于过电流状态时，不管开关控制信号如何，都产生用于关断开关元件的过电流保护信号; 以及延迟过电流保护信号的延迟电路。 另外，在其中设置开关控制电路。

公开(公告)号：US07271466B2

公开(公告)日：2007-09-18

申请号：US11206146

申请日：2005-08-18

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Nobuyuki Takai ,  Katsuhiko Kitagawa ,  Ryoji Tokushige ,  Takayasu Otagaki ,  Tatsuya Ando ,  Mitsuru Okigawa

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Nobuyuki Takai ,  Katsuhiko Kitagawa ,  Ryoji Tokushige ,  Takayasu Otagaki ,  Tatsuya Ando ,  Mitsuru Okigawa

IPC分类号： H01L29/40

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L24/13 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00

摘要： Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.

摘要翻译： 具有球形导电端子的BGA（球栅阵列）型半导体器件降低了成本并提高了可靠性。 第一布线形成在形成在半导体管芯的表面上的绝缘膜上。 在半导体管芯的表面上接合玻璃基板，半导体管芯的侧表面和背面被绝缘膜覆盖。 第二布线连接到第一布线的侧表面或后表面并在半导体管芯的后表面上延伸。 导电端子如凸块形成在第二布线上。

公开(公告)号：US07208340B2

公开(公告)日：2007-04-24

申请号：US10733799

申请日：2003-12-12

申请人： Takashi Noma

发明人： Takashi Noma

IPC分类号： H01L21/44

CPC分类号： H01L24/10 ,  H01L21/4846 ,  H01L23/3114 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15788 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05124

摘要： The invention is directed to improving of a yield and reliability of a BGA type semiconductor device having ball-shaped conductive terminals. A semiconductor wafer having warped portions is supported by a plurality of pins, being spaced from a heated stage. The semiconductor wafer is heated as a whole by uniformly irradiating thermal radiation thereto by using IR heaters disposed on an upper part of the semiconductor wafer and side heaters facing to lateral surfaces of the semiconductor wafer. This enables uniform reflowing of the conductive terminals provided on the semiconductor wafer, and makes each of the conductive terminals form a uniform shape.

摘要翻译： 本发明旨在提高具有球形导电端子的BGA型半导体器件的产率和可靠性。 具有翘曲部分的半导体晶片由多个引脚支撑，与加热台隔开。 通过使用设置在半导体晶片的上部的红外线加热器和面对半导体晶片的侧面的侧面加热器，通过均匀地照射热辐射来将半导体晶片整体加热。 这使得能够均匀地回流设置在半导体晶片上的导电端子，并且使每个导电端子形成均匀的形状。

公开(公告)号：US20070026639A1

公开(公告)日：2007-02-01

申请号：US11488890

申请日：2006-07-19

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Akira Suzuki ,  Yoshinori Seki ,  Koichi Kuhara ,  Yukihiro Takao ,  Hiroshi Yamada

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Akira Suzuki ,  Yoshinori Seki ,  Koichi Kuhara ,  Yukihiro Takao ,  Hiroshi Yamada

IPC分类号： H01L21/44

CPC分类号： H01L21/6835 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/10 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.

摘要翻译： 玻璃基板通过树脂粘合到其上形成有第一布线的半导体晶片的顶表面。 通过从晶片的背面开槽而形成V形槽。 形成与第一布线连接并在晶片的背面延伸的第二布线。 通过喷涂在第二布线上形成由有机树脂或光致抗蚀剂层组成的保护膜以提供开口的保护。 通过使用保护膜作为焊接掩模的丝网印刷形成导电端子。 可以通过喷涂在晶片的背面上形成缓冲材料。

公开(公告)号：US20060289991A1

公开(公告)日：2006-12-28

申请号：US11451619

申请日：2006-06-13

申请人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

发明人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L23/3192 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate with insulation films interposed therebetween, a plating layer formed on the pad electrode, a conductive terminal formed on the plating layer and electrically connected with the pad electrode, and a first passivation film covering the insulation films and a side end portion of the pad electrode, in which an exposed portion of the pad electrode that causes corrosion is covered by forming a second passivation film so as to cover the first passivation film, the plating layer, and a portion of a sidewall of the conductive terminal.

摘要翻译： 本发明提供了一种具有高可靠性的CSP型半导体器件。 半导体器件包括：在半导体衬底上形成有绝缘膜的焊盘电极，形成在焊盘电极上的镀层，形成在镀层上并与焊盘电极电连接的导电端子;以及第一钝化膜， 绝缘膜和焊盘电极的侧端部分，其中通过形成第二钝化膜来覆盖引起腐蚀的焊盘电极的暴露部分，以覆盖第一钝化膜，镀层和一部分 导电端子的侧壁。

公开(公告)号：US07102238B2

公开(公告)日：2006-09-05

申请号：US10828556

申请日：2004-04-21

申请人： Takashi Noma ,  Akira Suzuki ,  Hiroyuki Shinogi

发明人： Takashi Noma ,  Akira Suzuki ,  Hiroyuki Shinogi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/02 ,  H01L21/76898 ,  H01L23/3114 ,  H01L25/0657 ,  H01L27/14806 ,  H01L2224/0401 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06565 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

摘要： A stacked MCM is manufactured at reduced cost without using expensive apparatus. A first wiring and a second wiring are formed on a surface of a semiconductor chip of a first semiconductor device through an insulation film. A glass substrate having an opening to expose the second wiring is bonded to the surface of the semiconductor chip on which the first wiring and the second wiring are formed. A third wiring is disposed on a back surface and a side surface of the semiconductor chip through an insulation film and connected to the first wiring. And a conductive terminal of another semiconductor device is connected to the second wiring through the opening.

摘要翻译： 在不使用昂贵的设备的情况下，以低成本制造堆叠MCM。 通过绝缘膜在第一半导体器件的半导体芯片的表面上形成第一布线和第二布线。 具有露出第二布线的开口的玻璃基板被接合到形成有第一布线和第二布线的半导体芯片的表面上。 第三布线通过绝缘膜设置在半导体芯片的背面和侧面上并连接到第一布线。 并且另一半导体器件的导电端子通过开口连接到第二布线。

公开(公告)号：US20050208735A1

公开(公告)日：2005-09-22

申请号：US11069061

申请日：2005-03-02

申请人： Takashi Noma ,  Yoshinori Seki ,  Motoaki Wakui

发明人： Takashi Noma ,  Yoshinori Seki ,  Motoaki Wakui

IPC分类号： H01L21/301 ,  G01R31/26 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/485 ,  H01L23/544

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/544 ,  H01L24/10 ,  H01L24/13 ,  H01L24/97 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention is directed to an improvement of cutting accuracy in a cutting process when a semiconductor device attached with a supporting member is manufactured. The invention provides a manufacturing method of a semiconductor device where a semiconductor wafer attached with a glass substrate is cut with moving a rotation blade along a dicing region and has following features. A pair of alignment marks is formed facing each other over the dicing region on the semiconductor wafer. Then, when the rotation blade is to be aligned on a center of the dicing region, that is, on a centerline thereof in the cutting process, positions of the alignment marks are detected by a recognition camera, the centerline is calculated based on the detection result, and the rotation blade is aligned on the centerline to perform cutting.

摘要翻译： 本发明涉及当制造附着有支撑构件的半导体器件时，在切割过程中提高切割精度。 本发明提供一种半导体器件的制造方法，其中通过沿着切割区域移动旋转刀片来切割附着有玻璃基板的半导体晶片，并且具有以下特征。 在半导体晶片上的切割区域上形成一对对准标记。 然后，当在切割过程中旋转刀片对准切割区域的中心时，即在切割过程的中心线上，通过识别照相机检测对准标记的位置，基于检测计算中心线 结果，旋转叶片在中心线上对齐，以进行切割。

公开(公告)号：US20050067363A1

公开(公告)日：2005-03-31

申请号：US10913354

申请日：2004-08-09

申请人： Takashi Noma ,  Hiroshi Takemura

发明人： Takashi Noma ,  Hiroshi Takemura

IPC分类号： H02M3/155 ,  H02M3/156 ,  H02H7/122

CPC分类号： H02M3/156

摘要： A ripple converter includes a transistor for switching an input direct-current voltage, a choke coil and a smoothing capacitor for smoothing the switched direct-current voltage, a flywheel diode for causing a current to flow through the choke coil when the transistor is turned off, and a comparing unit for controlling the ON/OFF of the transistor according to ripple in an output voltage. In the ripple converter, a waveform converter is provided on a connecting path between an output terminal and a non-inverting input terminal of a comparator in the comparing unit. A result of converting the waveform of the output voltage is compared with a reference voltage, and a result of the comparison is fed back to the transistor.

摘要翻译： 纹波转换器包括用于切换输入直流电压的晶体管，用于平滑切换的直流电压的扼流线圈和平滑电容器;当晶体管截止时，用于使电流流过扼流线圈的续流二极管 以及用于根据输出电压中的纹波来控制晶体管的导通/截止的比较单元。 在纹波转换器中，波形转换器设置在比较单元中的比较器的输出端子和非反相输入端子之间的连接路径上。 将输出电压的波形转换的结果与参考电压进行比较，将比较结果反馈给晶体管。