公开(公告)号：US06069162A

公开(公告)日：2000-05-30

申请号：US147317

申请日：1999-05-28

Applicant: Yoshikuni Itoh ,  Takumi Yatabe, deceased ,  Takayuki Inoue ,  Hitoshi Hamashima

Inventor： Yoshikuni Itoh ,  Takumi Yatabe, deceased ,  Takayuki Inoue ,  Hitoshi Hamashima

IPC: A61K31/00 ,  A61K31/415 ,  A61K31/4164 ,  A61K31/4178 ,  A61K31/425 ,  A61K31/427 ,  A61K31/47 ,  A61K31/4709 ,  A61P1/00 ,  A61P1/04 ,  A61P3/00 ,  A61P3/10 ,  A61P9/00 ,  A61P11/00 ,  A61P19/00 ,  A61P19/02 ,  A61P19/10 ,  A61P25/04 ,  A61P29/00 ,  A61P37/00 ,  A61P39/00 ,  C07D233/54 ,  C07D233/90 ,  C07D401/06 ,  C07D401/12 ,  C07D401/14 ,  C07D403/12 ,  C07D403/14 ,  C07D405/12 ,  C07D405/14 ,  C07D409/12 ,  C07D413/12 ,  C07D417/12 ,  C07D521/00

CPC classification number: C07D233/64 ,  C07D231/12 ,  C07D233/56 ,  C07D233/90 ,  C07D249/08 ,  C07D401/06 ,  C07D401/12 ,  C07D401/14 ,  C07D403/12 ,  C07D403/14 ,  C07D405/12 ,  C07D405/14 ,  C07D409/12 ,  C07D413/12 ,  C07D417/12

Abstract: The object amide compounds of the present invention are novel and can be represented by the following general formula (I): whereinR.sup.1 is indolyl or benzofuranyl;R.sup.2 is hydrogen, lower alkylthio(lower)alkyl or a group of the formula: ##STR1## in which R.sup.5 is hydrogen, lower alkoxy or halogen; R.sup.3 is hydrogen, quinolyl or phenyl which may have a suitable substituent selected from the group consisting of lower alkyl, lower alkoxy, lower alkylthio and halogen;R.sup.4 is hydrogen or optionally esterified carboxy; andX is S or NR.sup.6in which R.sup.6 is hydrogen, lower alkyl or a group of the formula: ##STR2## in which R.sup.7 is lower alkyl or lower alkoxy.

Abstract translation: PCT No.PCT / JP97 / 01757 Sec。 371日期1999年5月28日 102（e）日期1999年5月28日PCT提交1997年5月22日PCT公布。 公开号WO97 / 45425 PCT 日期1997年12月4日本发明的目的酰胺化合物是新颖的，可以由以下通式（I）表示：其中R1是吲哚基或苯并呋喃基; R2是氢，低级烷硫基（低级）烷基或下式基团：其中R5是氢，低级烷氧基或卤素; R3是氢，喹啉基或苯基，其可以具有选自低级烷基，低级烷氧基，低级烷硫基和卤素的合适取代基; R4是氢或任选酯化的羧基; 且X为S或NR 6，其中R 6为氢，低级烷基或下式基团：其中R 7为低级烷基或低级烷氧基。

公开(公告)号：US5563162A

公开(公告)日：1996-10-08

申请号：US233771

申请日：1994-04-26

Applicant: Teruo Oku ,  Hiroshi Kayakiri ,  Shigeki Satoh ,  Yoshito Abe ,  Yuki Sawada ,  Takayuki Inoue ,  Hirokazu Tanaka

Inventor： Teruo Oku ,  Hiroshi Kayakiri ,  Shigeki Satoh ,  Yoshito Abe ,  Yuki Sawada ,  Takayuki Inoue ,  Hirokazu Tanaka

IPC: A61K31/47 ,  A61K31/495 ,  A61K31/498 ,  A61K31/50 ,  A61K31/502 ,  A61K31/505 ,  A61K31/517 ,  A61K31/53 ,  A61P35/00 ,  A61P37/08 ,  A61P43/00 ,  C07D215/24 ,  C07D215/26 ,  C07D215/40 ,  C07D237/10 ,  C07D237/28 ,  C07D239/74 ,  C07D241/42 ,  C07D241/44 ,  C07D401/12 ,  C07D401/14 ,  C07D403/12 ,  C07D409/12 ,  C07D413/12 ,  C07F7/18 ,  C07D215/02

CPC classification number: C07D401/12 ,  C07D215/26 ,  C07D237/28 ,  C07D239/74 ,  C07D241/42 ,  C07D401/14 ,  C07D403/12 ,  C07D409/12 ,  C07D413/12 ,  C07F7/1856

Abstract: This invention relates to new heterocyclic compounds and pharmaceutically acceptable salts thereof. More particularly, this invention relates to new heterocyclic compounds and salts thereof which display bradykinin antagonist activity, to processes for preparing these compounds, to a pharmaceutical composition comprising these compounds, and to methods of using same in the prevention and/or the treatment of bradykinin- or bradykinin analogue-mediated diseases such as allergy, inflammation, autoimmune disease, shock, pain, or the like, in human beings or in animals.

Abstract translation: 本发明涉及新的杂环化合物及其药学上可接受的盐。 更具体地说，本发明涉及向包含这些化合物的药物组合物中显示缓激肽拮抗剂活性的新型杂环化合物及其盐，制备这些化合物的方法，以及用于预防和/或治疗缓激肽的方法 - 或缓激肽类似物介导的疾病，如过敏，炎症，自身免疫性疾病，休克，疼痛等，在人类或动物中。

公开(公告)号：US5354759A

公开(公告)日：1994-10-11

申请号：US8646

申请日：1993-01-25

Applicant: Teruo Oku ,  Hiroyuki Setoi ,  Hiroshi Kayakiri ,  Shigeki Satoh ,  Takayuki Inoue ,  Yuki Sawada ,  Akio Kuroda ,  Hirokazu Tanaka

Inventor： Teruo Oku ,  Hiroyuki Setoi ,  Hiroshi Kayakiri ,  Shigeki Satoh ,  Takayuki Inoue ,  Yuki Sawada ,  Akio Kuroda ,  Hirokazu Tanaka

IPC: A61K31/435 ,  C07D471/04

CPC classification number: A61K31/435 ,  C07D471/04

Abstract: This invention related to compounds of the formula ##STR1## wherein the radicals are as defined in the claims. The compounds are angiotensin II antagonists useful in treating hypertension, etc.

Abstract translation: 本发明涉及式IMA的化合物，其中基团如权利要求中所定义。 这些化合物是可用于治疗高血压等的血管紧张素II拮抗剂

公开(公告)号：US4948671A

公开(公告)日：1990-08-14

申请号：US356609

申请日：1989-05-25

Applicant: Masafumi Hattori ,  Takayuki Inoue ,  Masahide Ochiumi

Inventor： Masafumi Hattori ,  Takayuki Inoue ,  Masahide Ochiumi

IPC: C08L23/26 ,  B32B27/28 ,  B32B27/32 ,  C08K5/00 ,  C08L23/00 ,  C08L23/02 ,  C08L29/04 ,  C08L51/00 ,  C08L51/02 ,  C08L51/06 ,  C08L53/00 ,  C08L101/00

CPC classification number: C08L23/02 ,  C08L51/06 ,  Y10T428/31504 ,  Y10T428/31909 ,  Y10T428/31913

Abstract: A transparent resin composition is described, comprising (i) from 65 to 99.9 parts by weight of a modified polyolefin which is at least partially modified with an unsaturated carboxylic acid or the anhydride thereof and having an unsaturated carboxylic acid or anhydride content of from 0.002 to 5 wt %, (2) from 35 to 0.1 parts by weight of a saponified ethylene/vinyl acetate copolymer having an ethylene content of from 25 to 75 mol % and a degree of saponification of at least 96%, and (3) from 0.5 to 200 parts by weight per 100 parts by weight of the copolymer (2) of a plasticizer. Molded articles of the resin composition have excellent transparency, moldability, mechanical strength, moisture barrier property, etc. The resin composition can be easily prepared from trimming wastes, wastes of extrusion or the like of multi-layered articles.

Abstract translation: 描述了一种透明树脂组合物，其包含（i）65至99.9重量份的改性聚烯烃，其至少部分地用不饱和羧酸或其酸酐改性并且具有不同的羧酸或酸酐含量为0.002至 5重量％，（2）35〜0.1重量份乙烯含量为25〜75摩尔％，皂化度为96％以上的皂化乙烯/乙酸乙烯酯共聚物，（3）0.5 相对于100重量份的增塑剂共聚物（2）为200重量份。 树脂组合物的成型体具有优异的透明性，成型性，机械强度，防潮性等。树脂组合物可以通过修整废物，多层制品的挤出废物等而容易地制备。

公开(公告)号：US4720425A

公开(公告)日：1988-01-19

申请号：US936774

申请日：1986-12-02

Applicant: Masafumi Hattori ,  Takayuki Inoue

Inventor： Masafumi Hattori ,  Takayuki Inoue

IPC: B32B27/32 ,  B32B27/08 ,  B32B27/36 ,  B65D35/08

CPC classification number: B32B27/08 ,  Y10T428/1379 ,  Y10T428/1386 ,  Y10T428/27 ,  Y10T428/31507 ,  Y10T428/31797 ,  Y10T428/31913 ,  Y10T428/3192

Abstract: A multi-layer laminated structure comprising a polycarbonate or thermoplastic polyester layer having adjacently adhered thereto a layer comprised of a modified olefin polymer having a stiffness modulus of from 100 to 3,000 Kg/cm.sup.2 and a degree of crystallinity of not more than 33%, in which an unsaturated carboxylic acid or the derivative thereof is grafted to at least a part of a polymer consisting of a hydrocarbon. The laminated structure is excellent in moisture impermeability, oxygen barrier property, adhesion durability under a high temperature and high humidity condition, moldability, processability, and the like, and is useful as a packaging material.

Abstract translation: 一种多层层叠结构，其包含聚碳酸酯或热塑性聚酯层，其相邻地粘附有由硬度模量为100至3,000Kg / cm 2和结晶度不超过33％的改性烯烃聚合物构成的层， 将不饱和羧酸或其衍生物接枝到由烃组成的聚合物的至少一部分上。 该层压结构在高温和高湿度条件下的不透水性，氧气阻隔性，粘合耐久性，成型性，加工性等方面优异，并且可用作包装材料。

公开(公告)号：US4415765A

公开(公告)日：1983-11-15

申请号：US261161

申请日：1981-04-30

Applicant: Tatsuya Iwasa ,  Takayuki Inoue ,  Noriyuki Mizuta

Inventor： Tatsuya Iwasa ,  Takayuki Inoue ,  Noriyuki Mizuta

IPC: H01B7/00 ,  H01B7/08 ,  H01B7/36

CPC classification number: H01B7/365 ,  H01B7/0045

Abstract: A plurality of connecting wires to be connected to separate devices are arranged regularly and fastened with a string at the front end, the intermediate end and the rear end corresponding to the position of the respective device so as to provide a flat structure including the fastening points in connection with the arrangement in order and the position of each end of the connecting wires so that the wiring can be easily attained to improve productivity; the reading of wiring diagram in the wiring operation is needless by connecting a data card; the flat structure facilitates employment of machines and the combination with a computer allows a fully automatic system. When the connecting wires are bundled, the increase of occupied sectional area is prevented and the occupied sectional area is substantially the same as that of the conventional one. The present invention is suited to the wiring of electric control devices.

Abstract translation: PCT No.PCT / JP80 / 00272 Sec。 1981年4月30日 102（e）日期1981年4月30日PCT提交1980年10月31日PCT公布。 公开号WO81 / 01343 日期为1981年5月14日。要连接到分离的设备的多条连接线规则地布置，并且在前端，中间端和后端处的串被紧固以对应于相应设备的位置，以便提供 平面结构，包括依次排列的连接点和连接线的每个端部的位置，使得可以容易地实现布线以提高生产率; 通过连接数据卡不需要在布线操作中读取接线图; 平面结构便于机器的使用，并且与计算机的组合允许全自动系统。 当连接线捆扎时，可以防止占用截面积的增加，占用的截面积与传统的截面面积基本相同。 本发明适用于电气控制装置的布线。

公开(公告)号：US08951894B2

公开(公告)日：2015-02-10

申请号：US13618472

申请日：2012-09-14

Applicant: Shunpei Yamazaki ,  Takayuki Inoue ,  Erumu Kikuchi ,  Hiroto Inoue

Inventor： Shunpei Yamazaki ,  Takayuki Inoue ,  Erumu Kikuchi ,  Hiroto Inoue

IPC: H01L21/314 ,  H01J37/32 ,  H01L29/66

CPC classification number: H01J37/32449 ,  H01J37/3244 ,  H01J37/32541 ,  H01L29/66765

Abstract: A structure of the plasma treatment apparatus is employed in which an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes, the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated, the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated, the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode, and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.

Abstract translation: 采用等离子体处理装置的结构，其中上电极具有设置有第一导入孔的突出部分和设置有第二导入孔的凹部，上电极的第一导入孔与填充有气体的第一圆筒连接， 不可能解离，第二引入孔连接到填充有可能解离的气体的第二气缸，不可能解离的气体从第一引入孔的引入口引入反应室 设置在上部电极的突出部分的表面上的引入孔和可能被解离的气体从设置在凹部的表面上的第二引入孔的引入口引入到反应室中。

公开(公告)号：US08901552B2

公开(公告)日：2014-12-02

申请号：US13226713

申请日：2011-09-07

Applicant: Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

IPC: H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/01 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

Abstract: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

Abstract translation: 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US08530030B2

公开(公告)日：2013-09-10

申请号：US13432322

申请日：2012-03-28

Applicant: Yasushi Noguchi ,  Atsushi Kaneda ,  Takayuki Inoue

Inventor： Yasushi Noguchi ,  Atsushi Kaneda ,  Takayuki Inoue

IPC: F01N3/10 ,  F01N3/24 ,  B01D53/94

CPC classification number: F01N3/28 ,  B01D46/2425 ,  B01D46/2451 ,  B01D46/247 ,  B01D46/2474 ,  B01D53/88 ,  B01D2046/2433 ,  B01D2046/2437 ,  B01D2258/01 ,  C04B35/565 ,  C04B35/6316 ,  C04B38/0009 ,  C04B41/009 ,  C04B41/5096 ,  C04B41/85 ,  C04B2111/0081 ,  C04B2235/3213 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/663 ,  C04B2235/96 ,  F01N3/0222 ,  Y02T10/20 ,  Y10T428/24149 ,  Y10T428/24165 ,  C04B38/0067 ,  C04B41/5059 ,  C04B38/0006 ,  C04B35/573

Abstract: There is disclosed a honeycomb structure including a honeycomb structure section including: porous partition walls to divide and form a plurality of cells which extend from one end surface to the other end surface and become through channels of a fluid; and an outer peripheral wall positioned in an outermost periphery. The partition walls and the outer peripheral wall contain silicon carbide particles as an aggregate, and silicon as a binder to bind the silicon carbide particles, thicknesses of the partition walls are from 50 to 200 μm, a cell density is from 50 to 150 cells/cm2, an average particle diameter of silicon carbide as the aggregate is from 3 to 40 μm, and a volume resistivity at 400° C. is from 1 to 40 Ωcm.

Abstract translation: 公开了一种蜂窝结构体，其包括蜂窝结构部分，该蜂窝结构部分包括：多孔分隔壁，用于分隔并形成从一个端面延伸到另一端面的多个单元，并且通过流体通道; 以及位于最外周的外周壁。 分隔壁和外周壁包含作为骨料的碳化硅颗粒和作为粘结剂的硅作为结合碳化硅颗粒的分隔壁，隔壁的厚度为50至200μm，电池密度为50至150个/ cm 2，作为骨料的碳化硅的平均粒径为3〜40μm，400℃下的体积电阻率为1〜40Ω·cm。

公开(公告)号：US08441047B2

公开(公告)日：2013-05-14

申请号：US12754393

申请日：2010-04-05

Applicant: Hiromichi Godo ,  Takayuki Inoue

Inventor： Hiromichi Godo ,  Takayuki Inoue

IPC: H01L29/80 ,  H01L31/112

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: An object is to provide an n-channel transistor and a p-channel transistor having a preferred structure using an oxide semiconductor. A first source or drain electrode which is electrically connected to a first oxide semiconductor layer and is formed using a stacked-layer structure including a first conductive layer containing a first material and a second conductive layer containing a second material, and a second source or drain electrode which is electrically connected to a second oxide semiconductor layer and is formed using a stacked-layer structure including a third conductive layer containing the first material and a fourth conductive layer containing the second material are included. The first oxide semiconductor layer is in contact with the first conductive layer of the first source or drain electrode, and the second oxide semiconductor layer is in contact with the third and the fourth conductive layers of the second source or drain electrode.

Abstract translation: 目的是提供使用氧化物半导体的具有优选结构的n沟道晶体管和p沟道晶体管。 第一源极或漏极，其电连接到第一氧化物半导体层，并且使用包括包含第一材料的第一导电层和包含第二材料的第二导电层的堆叠层结构形成，以及第二源极或漏极 电连接到第二氧化物半导体层并且使用包括包含第一材料的第三导电层和包含第二材料的第四导电层的层叠结构形成的电极。 第一氧化物半导体层与第一源极或漏极的第一导电层接触，并且第二氧化物半导体层与第二源极或漏极的第三导电层和第四导电层接触。