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61.发明授权Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same 失效磁阻元件及其制造方法以及使用该磁阻元件的磁头，磁存储器和磁记录装置公开(公告)号：US06943041B2
公开(公告)日：2005-09-13
申请号：US10719412
申请日：2003-11-21
IPC分类号： G01R33/09 , G11B5/39 , G11C11/16 , H01F10/32 , H01F41/30 , H01L27/22 , H01L43/08 , H01L43/12 , H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F41/302 , H01L43/08 , H01L43/12
摘要： The present invention provides a method for producing a magnetoresistive element including a tunnel insulating layer, and a first magnetic layer and a second magnetic layer that are laminated so as to sandwich the tunnel insulating layer, wherein a resistance value varies depending on a relative angle between magnetization directions of the first magnetic layer and the second magnetic layer. The method includes the steps of: (i) laminating a first magnetic layer, a third magnetic layer and an Al layer successively on a substrate; (ii) forming a tunnel insulating layer containing at least one compound selected from the group consisting of an oxide, nitride and oxynitride of Al by performing at least one reaction selected from the group consisting of oxidation, nitriding and oxynitriding of the Al layer; and (iii) forming a laminate including the first magnetic layer, the tunnel insulating layer and a second magnetic layer by laminating the second magnetic layer in such a manner that the tunnel insulating layer is sandwiched by the first magnetic layer and the second magnetic layer. The third magnetic layer has at least one crystal structure selected from the group consisting of a face-centered cubic crystal structure and a face-centered tetragonal crystal structure and is (111) oriented parallel to a film plane of the third magnetic layer. According to this production method, it is possible to produce a magnetoresistive element with excellent properties and thermal stability.
摘要翻译： 本发明提供了一种制造磁阻元件的方法，该磁阻元件包括隧道绝缘层，以及第一磁性层和第二磁性层，其被层压以夹住隧道绝缘层，其中电阻值根据相对角度而变化 第一磁性层和第二磁性层的磁化方向。 该方法包括以下步骤：（i）在衬底上依次层叠第一磁性层，第三磁性层和Al层; （ii）通过进行选自Al层的氧化，氮化和氮氧化的至少一种反应，形成包含至少一种选自Al的氧化物，氮化物和氮氧化物的化合物的隧道绝缘层; 以及（iii）通过层叠所述第二磁性层来形成包括所述第一磁性层，所述隧道绝缘层和第二磁性层的层压体，使得所述隧道绝缘层被所述第一磁性层和所述第二磁性层夹在中间。 第三磁性层具有至少一种选自面心立方晶体结构和面心四边形晶体结构的晶体结构，并且（111）取向为平行于第三磁性层的膜平面。 根据该制造方法，可以制造出具有优异性能和热稳定性的磁阻元件。
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公开(公告)号：US20050133834A1
公开(公告)日：2005-06-23
申请号：US10948747
申请日：2004-09-24
申请人： Haruyuki Sorada , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
发明人： Haruyuki Sorada , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8234 , H01L29/10 , H01L29/51 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66636 , H01L21/28202 , H01L29/1054 , H01L29/518 , H01L29/665 , H01L29/7833 , H01L29/7842
摘要： A semiconductor device of this invention includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate; a pair of source and drain electrodes respectively formed in regions of the semiconductor substrate situated on opposite sides of the gate electrode in a plan view; and a germanium-containing channel layer situated below the gate electrode to sandwich an gate insulator therebetween and intervening between the pair of source and drain electrodes, wherein a silicide layer forming at least a part of the source and drain electrodes has a lower germanium concentration than the channel layer.
摘要翻译： 本发明的半导体器件包括：半导体衬底; 形成在所述半导体衬底上的栅电极; 在平面图中分别形成在位于栅电极的相对侧的半导体衬底的区域中的一对源极和漏极; 以及位于栅极电极下方的含锗沟道层，以夹持栅极绝缘体，并且介于所述一对源极和漏极之间，其中形成所述源极和漏极的至少一部分的硅化物层的锗浓度低于 通道层。
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公开(公告)号：US20050040436A1
公开(公告)日：2005-02-24
申请号：US10866093
申请日：2004-06-14
申请人： Haruyuki Sorada , Akira Asai , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
发明人： Haruyuki Sorada , Akira Asai , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
IPC分类号： H01L21/8238 , H01L27/10
CPC分类号： H01L21/823807
摘要： A semiconductor integrated circuit fabrication method according to this invention includes: a step of forming a pair of first device forming regions and a pair of second device forming regions in a surface layer portion of a semiconductor substrate by surrounding each of the regions by device isolation; a step of forming a first oxide film covering the surface of the semiconductor substrate after the preceding step; a step of removing an intended portion of the first oxide film to expose the pair of second device forming regions; a step of forming a pair of heterojunction structures, by selective epitaxial growth, on the pair of second device forming regions thus exposed; a step of forming a second oxide film covering the surface of the substrate after the preceding step; and a step of forming a pair of gate electrodes above each of the pair of first device forming regions and the pair of second device forming regions, whereby a normal complementary MOS transistor and a heterojunction complementary MOS transistor are eventually formed in the pair of first device forming regions and the pair of second device forming regions, respectively.
摘要翻译： 根据本发明的半导体集成电路制造方法包括：通过器件隔离来围绕每个区域来在半导体衬底的表面层部分中形成一对第一器件形成区域和一对第二器件形成区域的步骤; 在前述步骤之后形成覆盖半导体衬底的表面的第一氧化物膜的步骤; 去除所述第一氧化物膜的预期部分以暴露所述一对第二器件形成区域的步骤; 通过选择性外延生长形成一对异质结结构在由此露出的一对第二器件形成区上的步骤; 在上述步骤之后形成覆盖基板表面的第二氧化膜的步骤; 以及在所述一对第一器件形成区域和所述一对第二器件形成区域中的每一个上形成一对栅电极的步骤，由此在所述一对第一器件形成区域中最终形成正常互补MOS晶体管和异质结互补MOS晶体管 形成区域和一对第二装置形成区域。
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公开(公告)号：US4881987A
公开(公告)日：1989-11-21
申请号：US295773
申请日：1989-01-11
申请人： Susumu Kanbara , Kenji Aihara , Masato Tomiku , Yoshio Kawashima , Tadashi Sawada , Shinji Okuda , Mitsuaki Ikeda
发明人： Susumu Kanbara , Kenji Aihara , Masato Tomiku , Yoshio Kawashima , Tadashi Sawada , Shinji Okuda , Mitsuaki Ikeda
摘要： Direct softening heat treatment of rolled wire rods comprises the steps of:providing wire rods by hot- or warm-rolling, and immediately following rolling, coiling the rolled wire rods in an annealing furnace. Apparatus therefor comprises an annealing furnace provided with an externally or internally built coiler for rolled wire rods disposed adjacent to a rolling line of said wire rods, the coiler being disposed so as to directly receive the rolled wire rods.
摘要翻译： 轧制线材的直接软化热处理包括以下步骤：通过热轧或热轧提供线材，并且在轧制之后立即将轧制的线材卷绕在退火炉中。 其设备包括一个退火炉，该退火炉设置有一个外部或内部卷绕机，用于与所述线材的轧制线相邻设置的轧制线材，所述卷取机设置成直接容纳轧制的线材。
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65.发明授权
公开(公告)号：US4834345A
公开(公告)日：1989-05-30
申请号：US207905
申请日：1988-06-16
申请人： Susumu Kanbara , Kenji Aihara , Masato Tomiku , Yoshio Kawashima , Tadashi Sawada , Shinji Okuda , Mitsuaki Ikeda
发明人： Susumu Kanbara , Kenji Aihara , Masato Tomiku , Yoshio Kawashima , Tadashi Sawada , Shinji Okuda , Mitsuaki Ikeda
摘要： Direct softening heat treatment of rolled wire rods comprises the steps:providing wire rods by hot- or warm-rolling, andimmediately following rolling, coiling the rolled wire rods in an annealing furnace. Apparatus therefor comprises an annealing furnace provided with an externally or internally built coiler for rolled wire rods disposed adjacent to a rolling line of said wire rods, the coiler being disposed so as to directly receive the rolled wire rods.
摘要翻译： 轧制线材的直接软化热处理包括以下步骤：通过热轧或热轧提供线材，并且在轧制之后立即将轧制的线材卷绕在退火炉中。 其设备包括一个退火炉，该退火炉设置有一个外部或内部卷绕机，用于与所述线材的轧制线相邻设置的轧制线材，所述卷取机设置成直接容纳轧制的线材。
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公开(公告)号：US07564073B2
公开(公告)日：2009-07-21
申请号：US11294566
申请日：2005-12-06
申请人： Haruyuki Sorada , Akira Asai , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
发明人： Haruyuki Sorada , Akira Asai , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
IPC分类号： H01L27/04
CPC分类号： H01L21/823807
摘要： A semiconductor integrated circuit fabrication method according to this invention includes: a step of forming a pair of first device forming regions and a pair of second device forming regions in a surface layer portion of a semiconductor substrate by surrounding each of the regions by device isolation; a step of forming a first oxide film covering the surface of the semiconductor substrate after the preceding step; a step of removing an intended portion of the first oxide film to expose the pair of second device forming regions; a step of forming a pair of heterojunction structures, by selective epitaxial growth, on the pair of second device forming regions thus exposed; a step of forming a second oxide film covering the surface of the substrate after the preceding step; and a step of forming a pair of gate electrodes above each of the pair of first device forming regions and the pair of second device forming regions, whereby a normal complementary MOS transistor and a heterojunction complementary MOS transistor are eventually formed in the pair of first device forming regions and the pair of second device forming regions, respectively.
摘要翻译： 根据本发明的半导体集成电路制造方法包括：通过器件隔离来围绕每个区域来在半导体衬底的表面层部分中形成一对第一器件形成区域和一对第二器件形成区域的步骤; 在前述步骤之后形成覆盖半导体衬底的表面的第一氧化物膜的步骤; 去除所述第一氧化物膜的预期部分以暴露所述一对第二器件形成区域的步骤; 通过选择性外延生长形成一对异质结结构在由此露出的一对第二器件形成区上的步骤; 在上述步骤之后形成覆盖基板表面的第二氧化膜的步骤; 以及在所述一对第一器件形成区域和所述一对第二器件形成区域中的每一个上形成一对栅电极的步骤，由此在所述一对第一器件形成区域中最终形成正常互补MOS晶体管和异质结互补MOS晶体管 形成区域和一对第二装置形成区域。
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67.发明授权公开(公告)号：US07079361B2
公开(公告)日：2006-07-18
申请号：US11060028
申请日：2005-02-16
申请人： Yasunari Sugita , Masayoshi Hiramoto , Nozomu Matsukawa , Mitsuo Satomi , Yoshio Kawashima , Akihiro Odagawa
发明人： Yasunari Sugita , Masayoshi Hiramoto , Nozomu Matsukawa , Mitsuo Satomi , Yoshio Kawashima , Akihiro Odagawa
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/3204 , H01F10/3231 , H01F10/3254 , H01F10/3268 , H01F10/3295 , Y10T428/115
摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.
摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， （X 1以上）选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种， Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W，Re中的至少一种 ，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。
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公开(公告)号：US20050218034A1
公开(公告)日：2005-10-06
申请号：US11087078
申请日：2005-03-23
申请人： Yoshio Kawashima
发明人： Yoshio Kawashima
IPC分类号： B65D85/86 , H01L21/00 , H01L21/673 , B65D85/30
CPC分类号： H01L21/67369
摘要： A lid unit seals a container main body of a thin-plate supporting container which is conveyed while plural 300 mm-diameter semiconductor wafers are stored in the container. In a wafer retainer which supports the wafers stored in the container main body, the maximum amount of displacement is set in a range of 1.5 to 2.5 mm (ranges from 1/200 to 1/120 of the semiconductor wafer diameter), and proportionality is held between the amount of displacement and external force when the maximum amount of displacement ranges from 1.5 to 2.5 mm. In the states in which the wafer retainer is fitted in the container main body and force is not applied, the wafer retainer is arranged at a position in which the wafer retainer is not in contact with the semiconductor wafers stored in the container main body or at a position in which the wafer retainer is in slight contact with the semiconductor wafers. Therefore, the lid unit can be attached and detached without fixing the container main body, so that vibration-resistant performance and shock-resistant performance are improved by preventing spring resistance force from rapidly increasing, and automatization of the attachment and detachment of the lid unit is easy to realize.
摘要翻译： 盖单元将多个300mm直径的半导体晶片存储在容器中的薄板支撑容器的容器主体密封，该容器主体被输送。 在支撑存储在容器主体中的晶片的晶片保持器中，最大位移量设定在1.5〜2.5mm（半导体晶片直径的1/200〜1/120的范围）的范围内，比例为 当最大位移量范围为1.5至2.5mm时，位移量与外力之间保持不变。 在晶片保持器装配在容器主体中并且不施加力的状态下，晶片保持器布置在晶片保持器不与存储在容器主体中的半导体晶片接触的位置处或者 晶片保持器与半导体晶片轻微接触的位置。 因此，可以在不固定容器主体的情况下将盖单元安装和拆卸，从而通过防止弹簧阻力急剧增加来提高防振性能和抗冲击性能，并且使盖单元的安装和拆卸自动化 很容易实现。
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公开(公告)号：US4761980A
公开(公告)日：1988-08-09
申请号：US835027
申请日：1986-02-28
申请人： Yoshio Kawashima , Shunji Ogata , Masaaki Yokoyama , Masato Tomiku , Tsuneo Yamada , Tsutomu Kuno , Hisao Murakami , Hiroyuki Morimoto , Toyoshige Myojo , Kozo Watanabe , Toshihiro Tanaka
发明人： Yoshio Kawashima , Shunji Ogata , Masaaki Yokoyama , Masato Tomiku , Tsuneo Yamada , Tsutomu Kuno , Hisao Murakami , Hiroyuki Morimoto , Toyoshige Myojo , Kozo Watanabe , Toshihiro Tanaka
CPC分类号： B23D33/006 , B21D43/021 , B21D43/09 , B21D43/285 , B21K27/02 , Y10T83/041 , Y10T83/283
摘要： Disclosed is a method and apparatus for feeding a material to a hot forging machine in a forging line in which a coiled material is uncoiled, straightened, fed intermittently by pinch rollers through a heating device, cut by a cutting device and then fed into a hot forging machine. The method has the steps of preparing a driving device which drives the pinch rollers mechanically independently from the hot forging machine; picking up the timing of forging conducted by the hot forging machine as an electric signal, and controlling the driving device in accordance with the electric signal.
摘要翻译： 公开了一种在锻造线中向热锻造机供给材料的方法和装置，其中卷绕材料被卷起，拉直，通过夹送辊通过加热装置间歇地进给，由切割装置切割，然后被送入热 锻造机。 该方法具有以下步骤：制备驱动装置，其与热锻机器机械地独立地驱动夹送辊; 拾取由热锻造机进行锻造的时刻作为电信号，并根据电信号控制驱动装置。
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70.发明授权公开(公告)号：US06917492B2
公开(公告)日：2005-07-12
申请号：US10611224
申请日：2003-06-27
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F41/307 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T29/49034
摘要： A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0
摘要翻译： 磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。 铁磁层中的至少一个具有由（M×××××××××××××××××××××××××××composition composition z SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >在与非磁性层的界面处。 非磁性层包括选自B，C，N，O和P中的至少一种元素。这里，M是Fe L是选自Pt，Pd，Ir和Rh中的至少一种元素，R是具有较低自由能以与非金属元素形成化合物的元素， 磁性层是选自B，C，N，O和P中的至少一种，除了组合物中包含的任何其它元素为M或L，以及a，b，c，x，y和 z满足a + b + c = 100，a> = 30，x + y = 100,0
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