公开(公告)号：US20150126046A1

公开(公告)日：2015-05-07

申请号：US14534870

申请日：2014-11-06

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Megan Doppel ,  John Entralgo ,  Jianping Zhao ,  Toshihisa Nozawa

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67

Abstract: A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.

Abstract translation: 公开了一种处理系统，其具有多个功率传输元件，其具有可设置在等离子体处理室周围的内腔。 每个电力传输元件可以传播可用于在等离子体处理室内产生等离子体的电磁能。 功率传输元件可以被设计为适应范围从500W到3500W和0.9GHz到9GHz的一系列功率和频率范围。 在一个实施例中，动力传递元件可以包括能够产生具有两种或更多种模式的驻波的矩形内腔。 在另一个实施例中，动力传递元件可以具有可以沿等离子体处理室放置的圆柱形内部空腔或使气缸的一端靠在等离子体处理室上。

公开(公告)号：US20140360670A1

公开(公告)日：2014-12-11

申请号：US14026092

申请日：2013-09-13

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H01J37/32

CPC classification number: H01J37/32357

Abstract: A processing system is disclosed, having a plasma source chamber that excites source plasma to generate an electron beam, and a process chamber that houses a substrate for exposure of the substrate to the electron beam. The processing system also includes an electron injector that injects electrons from the source plasma into the electron beam as the electron beam enters the process chamber. The electron beam includes a substantially equal number of electrons and positively charged ions in the process chamber. In one embodiment, the processing system also includes a magnetic field generator that generates a magnetic field in the process chamber to capture the electrons included in the electron beam to generate a voltage potential between the magnetic field generator and the substrate. The voltage potential accelerates the positively charged ions to the substrate and minimizes the electrons that reach the substrate.

Abstract translation: 公开了一种处理系统，其具有激发源等离子体以产生电子束的等离子体源室，以及容纳用于将衬底暴露于电子束的衬底的处理室。 处理系统还包括电子注入器，当电子束进入处理室时，电子注入器将电子从源等离子体注入电子束。 电子束在处理室中包括基本上相等数量的电子和带正电荷的离子。 在一个实施例中，处理系统还包括磁场发生器，其在处理室中产生磁场以捕获包括在电子束中的电子，以在磁场发生器和衬底之间产生电压电位。 电压电位将带正电荷的离子加速到衬底并使到达衬底的电子最小化。

公开(公告)号：US20140262040A1

公开(公告)日：2014-09-18

申请号：US13842965

申请日：2013-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jianping Zhao ,  Peter L. G. Ventzek ,  Lee Chen ,  Barton Lane ,  Merritt Funk ,  Radha Sundararajan ,  Iwao Toshihiko ,  Zhiying Chen

IPC: H01J37/32

CPC classification number: H01J37/32256

Abstract: A plasma-tuning rod configured for use with a microwave processing system. The waveguide includes a first dielectric portion having a first outer diameter. A second dielectric portion, with a second outer diameter greater than the first outer diameter surrounds the first dielectric portion, and may be coaxial therewith. In some embodiments of the present invention, a dielectric constant of the first dielectric portion may be equal to or greater than a dielectric constant of the second dielectric portion.

Abstract translation: 一种配置成与微波处理系统一起使用的等离子体调节杆。 波导包括具有第一外径的第一电介质部分。 具有大于第一外径的第二外径的第二电介质部分围绕第一电介质部分，并且可以与其同轴。 在本发明的一些实施例中，第一电介质部分的介电常数可以等于或大于第二电介质部分的介电常数。

公开(公告)号：US08669705B2

公开(公告)日：2014-03-11

申请号：US13830090

申请日：2013-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

IPC: H05B31/26

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有至少一个时隙的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型和第二凹陷构型，其中第一凹槽构型的至少一个第一凹槽的尺寸和/或形状与第二凹部构型的至少一个第二凹部不同。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

公开(公告)号：US20130119854A1

公开(公告)日：2013-05-16

申请号：US13676265

申请日：2012-11-14

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Lee Chen ,  Peter L.G. Ventzek ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC: H01J1/00

CPC classification number: H01J1/00 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4675

Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

Abstract translation: 提供射频（RF）功率耦合系统。 该系统具有被配置为在等离子体处理系统中将RF功率耦合到等离子体的RF电极，多个功率耦合元件被配置为在RF电极上的多个功率耦合位置处电耦合RF功率，以及耦合到多功率耦合的RF功率系统 元件，并且被配置为将RF功率信号耦合到多个功率耦合元件中的每一个。 多个功率耦合元件包括位于RF电极中心的中心元件和位于离RF电极中心偏离中心的外围元件。 第一外围RF功率信号与第二外围RF功率信号同相不同。

公开(公告)号：US20240380114A1

公开(公告)日：2024-11-14

申请号：US18781542

申请日：2024-07-23

Applicant: Tokyo Electron Limited

Inventor： Chelsea DuBose ,  Barton Lane ,  Merritt Funk ,  Justin Moses

IPC: H01Q9/27 ,  H01Q5/25

Abstract: According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonating structure to form a corresponding first resonant circuit operating at a first resonance frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonating structure to form a corresponding second resonant circuit operating at a second resonance frequency. In a first mode of operation, the resonating structure operates as a single resonance antenna. In a second mode of operation, the resonating structure operates as a parallel resonance antenna.

公开(公告)号：US20240347319A1

公开(公告)日：2024-10-17

申请号：US18750960

申请日：2024-06-21

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Peter Ventzek ,  Alok Ranjan

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01J37/32146 ,  H01J37/32183 ,  H01L21/67253 ,  H01L22/20 ,  H01J2237/334

Abstract: Various embodiments of systems and methods are described herein for controlling a pulsed plasma. Pulse timing parameters (e.g., the pulse on-time and/or the pulse-off time) of the plasma generation source may be controlled based on the measurement data received from measurement device(s), to control the plasma exposure of the substrate during a sequence of dynamically controlled pulses within the plasma process chamber. In addition or alternatively, pulse timing parameters (e.g., the pulse on-time and/or the pulse-off time) can be applied to the source power, bias power, and/or both based on the measurement data received from measurement device(s), to control a plasma exposure of the substrate. The pulse timing changes may be made in a feedforward or feedback manner.

公开(公告)号：US12119207B2

公开(公告)日：2024-10-15

申请号：US17748737

申请日：2022-05-19

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Barton Lane

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32651 ,  H01J37/32146 ,  H01J2237/327

Abstract: An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.

公开(公告)号：US12074390B2

公开(公告)日：2024-08-27

申请号：US17985360

申请日：2022-11-11

Applicant: Tokyo Electron Limited

Inventor： Chelsea DuBose ,  Barton Lane ,  Merritt Funk ,  Justin Moses

IPC: H01Q9/27 ,  H01Q5/25

CPC classification number: H01Q9/27 ,  H01Q5/25

Abstract: According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonating structure to form a corresponding first resonant circuit operating at a first resonance frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonating structure to form a corresponding second resonant circuit operating at a second resonance frequency. In a first mode of operation, the resonating structure operates as a single resonance antenna. In a second mode of operation, the resonating structure operates as a parallel resonance antenna.

公开(公告)号：US20240258074A1

公开(公告)日：2024-08-01

申请号：US18162876

申请日：2023-02-01

Applicant: Tokyo Electron Limited

Inventor： Chelsea DuBose ,  Barton Lane ,  Justin Moses ,  Merritt Funk ,  Mitsunori Ohata

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J2237/327

Abstract: According to an embodiment, a plasma processing system includes a plasma chamber, a planar antenna, a dielectric plate, and a plurality of magnets. The planar antenna is configured to generate plasma within the plasma chamber. The dielectric plate is disposed between the plasma chamber and the planar antenna. The magnets are arranged vertically above an outer surface of the dielectric plate that faces the plasma chamber.