摘要:
A method (and system) of reducing contact resistance on a silicon-on-insulator device, including controlling a silicide depth in a source-drain region of the device.
摘要:
An apparatus is provided for implementing an enhanced hand shake protocol for microelectronic communication systems. A transmitter and a receiver is coupled together by a transmission link. The transmitter receives an idle input. The idle input is activated when the transmitter is not transmitting data and the transmitter applies a first common 10 mode level to the receiving unit. The idle input is deactivated when the transmitter is ready to transmit data and the transmitter raises the common mode level to the receiving unit. Responsive to the receiver detecting the common mode level up-movement, then the receiver receives the transmitted data signals. After the desired data has been sent, the 15 transmitter terminates communications, drops the common mode level with the idle input being activated.
摘要:
A semiconductor structure for a dynamic random access memory (DRAM) cell array that includes a plurality of vertical memory cells built on a semiconductor-on-insulator (SOI) wafer and a body contact electrically coupling a semiconductor body and a semiconductor substrate of the SOI wafer. The semiconductor body includes a channel region for the access device of one of the vertical memory cells. The body contact, which extends through a buried dielectric layer of the SOI wafer, provides a current leakage path that reduces the impact of floating body effects upon the vertical memory cell. The body contact may be formed by etching a via that extends through the semiconductor body and buried dielectric layer of the SOI wafer and extends into the substrate and partially filling the via with a conductive material that electrically couples the semiconductor body with the substrate.
摘要:
A method (and system) of reducing contact resistance on a silicon-on-insulator device, including controlling a silicide depth in a source-drain region of the device.
摘要:
A semiconductor structure that includes a monocrystalline germanium-containing layer, preferably substantially pure germanium, a substrate, and a buried insulator layer separating the germanium-containing layer from the substrate. A porous layer, which may be porous silicon, is formed on a substrate and a germanium-containing layer is formed on the porous silicon layer. The porous layer may be converted to a layer of oxide, which provides the buried insulator layer. Alternatively, the germanium-containing layer may be transferred from the porous layer to an insulating layer on another substrate. After the transfer, the insulating layer is buried between the latter substrate and the germanium-containing layer.
摘要:
Semiconductor device structures that integrate field effect transistors and bipolar junction transistors on a single substrate, such as a semiconductor-on-insulator substrate, and methods for fabricating such hybrid semiconductor device structures. The field effect and bipolar junction transistors are fabricated using adjacent electrically-isolated semiconductor bodies. During fabrication of the device structures, certain fabrication stages strategically rely on block masks for process isolation. Other fabrication stages are shared during the fabrication process for seamless integration that reduces process complexity.
摘要:
A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.
摘要:
An integrated circuit includes memory cells having array transistors separated by minimum lithographic feature size, and unsilicided metal bit lines encapsulated by a diffusion barrier while high performance logic transistors may be formed on the same chip without compromise of performance including an effective channel silicided contacts for low source/drain contact resistance, extension and halo implants for control of short channel effects and a dual work function semiconductor gate having a high impurity concentration and correspondingly thin depletion layer thickness commensurate with state of the art gate dielectric thickness. This structure is achieved by of an easily planarized material, and using a similar mask planarized to the height of the structures of differing materials to decouple substrate and gate implantations in the logic transistors.
摘要:
Methods of manufacturing trench-bounded buried-channel p-type metal oxide semiconductor field effect transistors (p-MOSFETs), as used in dynamic random access memory (DRAM) technologies, for significantly reducing the anomalous buried-channel p-MOSFET sensitivity to device width. In one embodiment, the method comprises the initiation of a low temperature annealing step using an inert gas after the deep phosphorous n-well implant step, and prior to the boron buried-channel implant and 850.degree. C. gate oxidation steps. Alternatively, the annealing step may be performed after the boron buried-channel implant and prior to the 850.degree. C. gate oxidation step. In another embodiment, a rapid thermal oxidation (RTO) step is substituted for the 850.degree. C. gate oxidation step, following the deep phosphorous n-well and boron buried-channel implant steps. Alternatively, an 850.degree. C. gate oxidation step may follow the RTO gate oxidation step.
摘要:
Lateral field emission devices ("FEDs") for display elements and methods of fabrication are set forth. The FED includes a thin-film emitter oriented parallel to, and disposed above, a substrate. The FED further includes a columnar shaped anode having a first lateral surface. A phosphor layer is disposed adjacent to the first lateral surface. Specifically, the anode is oriented such that the lateral surface and adjacent phosphor layer are perpendicular to the substrate. The emitter has a tip which is spaced less than the mean free distance of an electron in air from the phosphor layer. Operationally, when a voltage potential is applied between said anode and said emitter, electrons are emitted from the tip of the emitter into the phosphor layer causing the phosphor layer to emit electromagnetic energy. Further specific details of the field emission device, fabrication method, method of operation, and associated display are set forth.