公开(公告)号：US20050153217A1

公开(公告)日：2005-07-14

申请号：US11012494

申请日：2004-12-16

申请人： Kyoko Izuha ,  Shigeki Nojima ,  Toshiya Kotani ,  Satoshi Tanaka

发明人： Kyoko Izuha ,  Shigeki Nojima ,  Toshiya Kotani ,  Satoshi Tanaka

IPC分类号： G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  G06F17/50 ,  H01L21/027

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： A pattern verification method comprising preparing a desired pattern and a mask pattern forming the desired pattern on a substrate, defining at least one evaluation point on an edge of the desired pattern, defining at least one process parameter to compute the transferred/formed pattern, defining a reference value and a variable range for each of the process parameters, computing a positional displacement for each first points corresponding to the evaluation point, first points computed using correction mask pattern and a plurality of combinations of parameter values obtained by varying the process parameters within the variable range or within the respective variable ranges, the positional displacement being displacement between first point and the evaluation point, computing a statistics of the positional displacements for each of the evaluation points, and outputting information modifying the mask pattern according to the statistics.

摘要翻译： 一种图案验证方法，包括在衬底上制备期望图案和形成期望图案的掩模图案，在期望图案的边缘上限定至少一个评估点，限定至少一个工艺参数以计算所转印/形成的图案，定义 对于每个过程参数的参考值和可变范围，计算与评估点相对应的每个第一点的位置位移，使用校正掩模图案计算的第一点和通过改变其中的处理参数而获得的参数值的多个组合 可变范围或在各个可变范围内，位置偏移是第一点和评估点之间的位移，计算每个评估点的位置偏移的统计，以及根据统计信息输出修改掩模图案的信息。

公开(公告)号：US06901577B2

公开(公告)日：2005-05-31

申请号：US10183572

申请日：2002-06-28

申请人： Toshiya Kotani ,  Satoshi Tanaka ,  Soichi Inoue

发明人： Toshiya Kotani ,  Satoshi Tanaka ,  Soichi Inoue

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G06F17/50 ,  G06F9/45

CPC分类号： G03F1/36 ,  Y10S438/926

摘要： A pattern forming method includes determining an allowable value of an etching conversion difference, obtaining a maximum distance between patterns generating the etching conversion difference within the allowable value, the patterns including main patterns or both main patterns and a dummy pattern, preparing a first design layout in which a first distance between the main patterns is smaller than the maximum distance, or a second design layout in which a second distance between the main patterns and the dummy pattern is smaller than the maximum distance, performing a design data conversion based on the first or second design layout to form first or second design data, and forming the main patterns by using the first design data, or forming both the main patterns and the dummy pattern by using the second design data.

公开(公告)号：US20050064302A1

公开(公告)日：2005-03-24

申请号：US10933334

申请日：2004-09-03

申请人： Toshiya Kotani ,  Satoshi Tanaka ,  Shoichi Inoue

发明人： Toshiya Kotani ,  Satoshi Tanaka ,  Shoichi Inoue

IPC分类号： G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G06F17/50 ,  H01J37/302 ,  H01L21/027 ,  G03F9/00 ,  G21K5/10 ,  H01J37/08

CPC分类号： G03F1/36 ,  H01J37/3026 ,  H01J2237/31769

摘要： A method of forming a mask pattern comprises the following steps. A second cell library is prepared by making process proximity effect correction with respect to cell patterns stored in a first cell library. The second cell library stores corrected cell patterns. A first corrected cell pattern and a second corrected cell pattern of the corrected cell patterns are placed so that an edge of the first corrected cell pattern and an edge of the second corrected cell pattern contact or come close to or overlap each other. A boundary pattern at the boundary neighborhood between the first corrected cell pattern and the second corrected cell pattern is extracted. Process proximity effect correction is made with respect to the boundary pattern.

摘要翻译： 形成掩模图案的方法包括以下步骤。 通过相对于存储在第一个细胞库中的细胞图案进行过程接近效应校正来制备第二个细胞库。 第二个细胞库存储校正的细胞图案。 放置经校正的单元图案的第一校正单元图案和第二校正单元图形，使得第一校正单元图案的边缘和第二校正单元图案的边缘彼此接近或重叠。 提取在第一校正单元图案和第二校正单元图案之间的边界邻域处的边界图案。 相对于边界图案进行过程接近效应校正。

公开(公告)号：US08865589B2

公开(公告)日：2014-10-21

申请号：US13614217

申请日：2012-09-13

申请人： Takaki Hashimoto ,  Yasunobu Kai ,  Toshiya Kotani

发明人： Takaki Hashimoto ,  Yasunobu Kai ,  Toshiya Kotani

IPC分类号： H01L21/027 ,  H01L21/768 ,  H01L21/311 ,  H01L23/528 ,  H01L21/033 ,  H01L27/115

CPC分类号： H01L23/528 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/768 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76895 ,  H01L27/11519 ,  H01L2924/0002 ,  Y10S438/947 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes a plurality of wires arranged in parallel at a predetermined pitch, a plurality at first contacts that are each connected to an odd-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to a wiring direction of the wires, and a plurality of second contacts that are each connected to an even-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to the wiring direction of the wires in such a way as to be offset from the first contacts in the wiring direction of the wires, in which the first contacts are offset from the second contacts by a pitch of the wires in an orthogonal direction with respect to the wiring direction of the wires.

摘要翻译： 根据一个实施例，半导体器件包括以预定间距平行布置的多条导线，多个第一触点分别连接到导线之间的奇数编号，并且与正交方向平行布置，与 与导线的布线方向相连接的多个第二触点，以及多个第二触点，每个第二触点各自连接到电线中的偶数线，并且相对于线的布线方向在正交方向上平行布置， 在与导线的布线方向正交的方向上的第一触点相对于第二触点偏离线的间距的方式偏离布线方向的第一触点。

公开(公告)号：US08609303B2

公开(公告)日：2013-12-17

申请号：US13237651

申请日：2011-09-20

申请人： Chikaaki Kodama ,  Toshiya Kotani ,  Hiromitusu Mashita ,  Fumiharu Nakajima

发明人： Chikaaki Kodama ,  Toshiya Kotani ,  Hiromitusu Mashita ,  Fumiharu Nakajima

IPC分类号： G03F1/38 ,  G03F1/68

CPC分类号： G03F1/36 ,  G03F1/38

摘要： According to a mask pattern generating method of the embodiments, an undesired pattern, which is transferred onto a substrate due to an auxiliary pattern when an on-substrate pattern is formed on the substrate by using a mask pattern in which the auxiliary pattern is placed, is extracted as an undesired transfer pattern. Then, the mask pattern is corrected by changing a size of the auxiliary pattern according to a size and a position of the undesired transfer pattern.

摘要翻译： 根据实施例的掩模图案生成方法，当通过使用其中放置辅助图案的掩模图案在衬底上形成衬底上图案时，由于辅助图案而转移到衬底上的不需要的图案， 被提取为不期望的转移模式。 然后，通过根据不希望的转印图案的尺寸和位置改变辅助图案的尺寸来校正掩模图案。

公开(公告)号：US08527914B2

公开(公告)日：2013-09-03

申请号：US13615691

申请日：2012-09-14

申请人： Taiga Uno ,  Toshiya Kotani ,  Satoshi Tanaka

发明人： Taiga Uno ,  Toshiya Kotani ,  Satoshi Tanaka

IPC分类号： G06F17/50

CPC分类号： G03F7/70941 ,  G03F1/70

摘要： A flare map calculating method of an embodiment calculates an optical image intensity distribution in each division region set in a pattern region. Furthermore, an average value of the optical image intensity distribution is calculated in each division region. A pattern or plural patterns, which has a pattern density corresponding to the average value, is calculated as a corresponding density pattern in each division region. Furthermore, a density map, which represents a pattern density distribution within the pattern region, is generated based on the corresponding density pattern, and a flare map representing a flare intensity distribution within the pattern region is calculated by convolution integral of the density map and a point spread function.

摘要翻译： 实施例的耀斑映射计算方法计算在图案区域中设置的每个划分区域中的光学图像强度分布。 此外，在每个划分区域中计算出光学图像强度分布的平均值。 在每个划分区域中计算具有对应于平均值的图案密度的图案或多个图案作为相应的浓度图案。 此外，基于对应的浓度模式生成表示图案区域内的图案密度分布的密度图，并且通过密度图和a的卷积积分来计算表示图案区域内的耀斑强度分布的耀斑图 点扩散功能。

公开(公告)号：US20130126959A1

公开(公告)日：2013-05-23

申请号：US13613473

申请日：2012-09-13

申请人： Ryota Aburada ,  Takashi Obara ,  Toshiya Kotani

发明人： Ryota Aburada ,  Takashi Obara ,  Toshiya Kotani

IPC分类号： H01L27/088 ,  H01L21/302 ,  H01L21/336 ,  H01L29/02

CPC分类号： H01L21/0337 ,  H01L21/32139 ,  H01L27/11582

摘要： According to one embodiment, there are provided a first shaped pattern in which a plurality of first holes are arranged and of which a width is periodically changed along an arrangement direction of the first holes, a second shaped pattern in which a plurality of second holes are arranged and of which a width is periodically changed along an arrangement direction of the second holes, and slits which are formed along the arrangement direction of the first holes and separate the first shaped pattern and the second shaped pattern.

摘要翻译： 根据一个实施例，提供了一种第一成形图案，其中布置多个第一孔并且沿着第一孔的排列方向周期性地改变宽度，第二成形图案中多个第二孔是 沿着第二孔的排列方向周期性地改变宽度，沿着第一孔的排列方向形成并分离第一成形图案和第二成形图案的狭缝。

公开(公告)号：US08438527B2

公开(公告)日：2013-05-07

申请号：US13426965

申请日：2012-03-22

申请人： Satomi Nakamura ,  Toshiya Kotani ,  Kazuhito Kobayashi ,  Akiko Mimotogi ,  Chikaaki Kodama

发明人： Satomi Nakamura ,  Toshiya Kotani ,  Kazuhito Kobayashi ,  Akiko Mimotogi ,  Chikaaki Kodama

IPC分类号： G06F17/50

CPC分类号： G03F1/70 ,  G03F1/84 ,  G03F7/70625

摘要： According to one embodiment, an original plate evaluation method is disclosed. The original plate includes a substrate and N patterns differing from one another in shape. The method includes selecting N1 patterns from the N patterns based on first criterion, obtaining measured values for the N1 patterns, performing a decision whether the obtained measured values satisfy first specification value, selecting N2 patterns from the N patterns based on second criterion, predicting shapes of transfer patterns corresponding to N2 patterns, performing a decision whether the predicted shapes satisfy second specification value, and evaluating the plate based on the decision.

摘要翻译： 根据一个实施例，公开了原版评估方法。 原版包括基板和N形图案，其形状彼此不同。 该方法包括基于第一准则从N个图案中选择N1个图案，获得N1个图案的测量值，执行所获得的测量值是否满足第一指定值，根据第二准则从N个图案中选择N2个图案，预测形状 对应于N2图案的传送图案，执行预测形状是否满足第二规格值的判定，以及基于该判定来评估印版。

公开(公告)号：US08336005B2

公开(公告)日：2012-12-18

申请号：US13050864

申请日：2011-03-17

申请人： Takafumi Taguchi ,  Toshiya Kotani ,  Hiromitsu Mashita ,  Fumiharu Nakajima ,  Ryota Aburada ,  Chikaaki Kodama

发明人： Takafumi Taguchi ,  Toshiya Kotani ,  Hiromitsu Mashita ,  Fumiharu Nakajima ,  Ryota Aburada ,  Chikaaki Kodama

IPC分类号： G06F17/50

CPC分类号： G06F17/5068

摘要： A pattern dimension calculation method according to one embodiment calculates a taper shape of a mask member used as a mask when a circuit pattern is processed in an upper layer of the circuit pattern formed on a substrate. The method calculates an opening angle facing the mask member from a shape prediction position on the circuit pattern on the basis of the taper shape. The method calculates a dimension of the circuit pattern according to the opening angle formed at the shape prediction position.

摘要翻译： 根据一个实施例的图案尺寸计算方法计算当在形成在基板上的电路图案的上层中处理电路图案时用作掩模的掩模构件的锥形形状。 该方法基于锥形形状从电路图案上的形状预测位置计算面向掩模构件的打开角度。 该方法根据在形状预测位置处形成的打开角度来计算电路图案的尺寸。

公开(公告)号：US20120244707A1

公开(公告)日：2012-09-27

申请号：US13239019

申请日：2011-09-21

申请人： Taiga Uno ,  Toshiya Kotani ,  Hiromitsu Mashita ,  Yukiyasu Arisawa

发明人： Taiga Uno ,  Toshiya Kotani ,  Hiromitsu Mashita ,  Yukiyasu Arisawa

IPC分类号： G03F1/70 ,  H01L21/311 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/70941

摘要： In the method of correcting a mask pattern according to the embodiments, a mask pattern correction amount for a reference flare value is calculated as a reference mask correction amount, for every type of patterns within the layout, and a change amount of the mask pattern correction amount corresponding to the change amount of the flare value is calculated as the change amount information. A mask pattern corresponding to the flare value of the pattern is created based on the reference mask correction amount and the change amount information corresponding to the pattern, extracted from the information having the pattern, the reference mask correction amount, and the change amount information correlated with each other, and based on a difference between the flare value of the pattern and the reference flare value.

摘要翻译： 在根据实施例的校正掩模图案的方法中，对于布局中的每种类型的图案，计算用于参考闪光值的掩模图案校正量作为参考掩模校正量，以及掩模图案校正的改变量 计算与闪光值的变化量对应的量作为变化量信息。 基于从具有图案的信息提取参考掩模校正量和变化量信息相关联的参考掩模校正量和对应于图案的改变量信息，创建与图案的闪光值相对应的掩模图案 并且基于图案的耀斑值和参考闪光值之间的差异。