摘要:
An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
摘要:
A system for inhibiting the transport of contaminant particles with an ion beam includes an electric field generator for generating an electric field relative to a path of travel for the ion beam. A particle located in the ion beam and in a region of the electric field is charged to a polarity according to the ion beam, so that the electric field may urge the charged particle out of the ion beam.
摘要:
A system for inhibiting the transport of contaminant particles with an ion beam includes a particle charging system for charging particles within a region through which the ion beam travels. An electric field is generated downstream relative to the charged region so as to urge charged particles away from a direction of travel for the ion beam.
摘要:
An improved bellows assembly (18) is provided for use in, for example, an ion implanter (10). The bellows assembly comprises a first mounting portion (56) located at one end of the bellows assembly for fixedly mounting the bellows assembly to a first vacuum chamber (16); a second mounting portion (52) located at an opposite end of the bellows assembly for slidably mounting the bellows assembly to a second vacuum chamber (15); and a steel bellows (54) located between the first and second mounting portions. The bellows extends generally along a longitudinal axis (64) and is expansible and contractible along this axis. The second mounting portion permits radial slidable movement of the bellows assembly with respect to the second chamber in a first plane substantially perpendicular to this axis. The second mounting portion comprises at least one sliding seal subassembly (80) for maintaining the vacuum, and a support ring (78) and a slide plate (82) located on opposite ends of the sliding seal subassembly. The slide plate and the sliding seal subassembly provide a slidable vacuum-tight mating surface therebetween.
摘要:
Method and apparatus for maintaining an ion beam along a beam path from an ion source to an ion implantation station where workpieces are treated with the ion beam. An ion beam neutralizer is positioned upstream from the ion treatment station and includes confinement structure which bounds the ion beam path. An electron source positioned within the confinement structure emits electrons into the ion beam. An array of magnets supported by the confinement structure creates a magnetic field which tends to confine the electrons moving within the confinement structure. An interior magnetic filter field is created inside the confinement structure by a plurality of axially elongated filter rods having encapsulated magnets bounding the ion beam and oriented generally parallel to the ion beam path. This interior magnetic field confines higher energy electrons from leaving the ion beam path and permits lower energy electrons to drift along the ion beam.
摘要:
An ion implantation featuring an improved beam neutralizer. A cylindrical electron source encircles the ion beam at a location just before the ion beam enters an implantation chamber. Regularly spaced cavities in the electron source contain wire filaments which are energized to emit electrons. The electrons are accelerated through the region of the ion beam and impact an inwardly facing wall of the cylindrical electron support. This causes low-energy electron emissions which neutralize the ion beam. Performance of the beam neutralizer is enhanced by injecting an ionizable gas into the region between the electron emitting surface and the ion beam.
摘要:
An ion implantation source used in an ion implantation system. The source produces multiple beam portions which combine to form a large diameter beam of the size of a workpiece. By controlling beam neutralization of the individual beam portions the ion density as a function of position within the cross-section of the beam can be controlled.
摘要:
A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.
摘要:
One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.
摘要:
A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends across a width of the ion beam for deflecting ions entering the lens structure. The lens structure includes a first electrode for decelerating ions and a second electrode for accelerating the ions. A lens structure mode controller selectively activates either the accelerating or decelerating electrode to to cause ions entering the lens structure to exit said lens structure with a desired trajectory regardless of the trajectory ions enter the lens structure.