AC light emitting diode
    61.
    发明授权
    AC light emitting diode 有权
    交流发光二极管

    公开(公告)号:US07768020B2

    公开(公告)日:2010-08-03

    申请号:US12515869

    申请日:2007-03-13

    Abstract: Disclosed herein is an AC light emitting diode. The light emitting diode comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate. Wires electrically connect the light emitting cells to one another to thereby form a serial array of the light emitting cells. Further, the light emitting cells are spaced apart from one another by distances within a range of 10 to 30 D, and the serial array is operated while connected to an AC power source. Accordingly, the excellent operating characteristics and light output power can be secured in an AC light emitting diode with a limited size.

    Abstract translation: 本文公开了AC发光二极管。 发光二极管包括二维布置在单个基板上的多个发光单元。 导线将发光单元彼此电连接从而形成发光单元的串联阵列。 此外,发光单元彼此隔开距离在10至30D的范围内,串联阵列在连接到交流电源时工作。 因此,可以在具有有限尺寸的AC发光二极管中确保优异的操作特性和光输出功率。

    LIGHT EMITTING DIODE FOR AC OPERATION
    62.
    发明申请
    LIGHT EMITTING DIODE FOR AC OPERATION 有权
    用于交流操作的发光二极管

    公开(公告)号:US20100102336A1

    公开(公告)日:2010-04-29

    申请号:US12607506

    申请日:2009-10-28

    Abstract: The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

    Abstract translation: 本发明公开了一种发光二极管(LED),其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元,每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元,每个包括至少一个发光单元,每个全波发光单元包括分别在其两端形成的第三和第四端子。 每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子,并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子 波发光单元。 此外,第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间,并且第二半波发光单元 串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。

    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    63.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20100078658A1

    公开(公告)日:2010-04-01

    申请号:US12630370

    申请日:2009-12-03

    Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

    Abstract translation: 本发明涉及一种发光器件及其制造方法。 根据本发明,发光器件包括衬底,形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层,其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外,本发明提供了一种发光器件,其包括形成有多个发光单元的衬底,每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层,以及基座衬底翻转 芯片接合到基板上,其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接,并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外,本发明提供一种制造发光器件的方法。 因此,具有发光效率,外部量子效率,提取效率等发光装置的特性得到提高,可靠性得到确保,能够发出高发光强度和亮度的光的优点。

    AC LIGHT EMITTING DIODE
    65.
    发明申请
    AC LIGHT EMITTING DIODE 有权
    交流发光二极管

    公开(公告)号:US20100019253A1

    公开(公告)日:2010-01-28

    申请号:US12515869

    申请日:2007-03-13

    Abstract: Disclosed herein is an AC light emitting diode. The light emitting diode comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate. Wires electrically connect the light emitting cells to one another to thereby form a serial array of the light emitting cells. Further, the light emitting cells are spaced apart from one another by distances within a range of 10 to 30 D, and the serial array is operated while connected to an AC power source. Accordingly, the excellent operating characteristics and light output power can be secured in an AC light emitting diode with a limited size.

    Abstract translation: 本文公开了AC发光二极管。 发光二极管包括二维布置在单个基板上的多个发光单元。 导线将发光单元彼此电连接从而形成发光单元的串联阵列。 此外,发光单元彼此隔开距离在10至30D的范围内,串联阵列在连接到交流电源时工作。 因此,可以在具有有限尺寸的AC发光二极管中确保优异的操作特性和光输出功率。

    LIGHT EMITTING DIODE HAVING LIGHT EMITTING CELL WITH DIFFERENT SIZE AND LIGHT EMITTING DEVICE THEREOF
    66.
    发明申请
    LIGHT EMITTING DIODE HAVING LIGHT EMITTING CELL WITH DIFFERENT SIZE AND LIGHT EMITTING DEVICE THEREOF 有权
    具有不同尺寸的发光单元的发光二极管及其发光装置

    公开(公告)号:US20100006867A1

    公开(公告)日:2010-01-14

    申请号:US12442796

    申请日:2007-09-14

    Abstract: There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires.According to the present invention, light emitting cells formed in an LED have different sizes, and thus have different turn-on voltages when light is emitted under AC power, so that times when the respective light emitting cells start emitting light are different to thereby effectively reduce a flicker phenomenon.

    Abstract translation: 提供了在AC电源下工作的发光二极管,其包括基板; 形成在所述基板上的缓冲层; 以及形成在所述缓冲层上以具有不同尺寸并且彼此电隔离的多个发光单元,所述多个发光单元通过金属线串联连接。 根据本发明,形成在LED中的发光单元具有不同的尺寸,因此当在AC功率下发光时具有不同的导通电压,从而当各个发光单元开始发光的时间不同,从而有效地 减少闪烁现象。

    LIGHT EMITTING DIODE
    67.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号:US20080230765A1

    公开(公告)日:2008-09-25

    申请号:US12050873

    申请日:2008-03-18

    Abstract: AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.

    Abstract translation: 根据本发明的AC LED包括衬底和至少一个具有串联连接在衬底上的多个发光单元的串联阵列。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层,由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层,活性层 介于下半导体层和上半导体层之间的下电极,形成在衬底的第一角上露出的下半导体层上的下电极,形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上,并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于 相邻另一个发光单元的那些。

    METHOD OF FABRICATING LIGHT EMITTING DIODE
    68.
    发明申请
    METHOD OF FABRICATING LIGHT EMITTING DIODE 有权
    制造发光二极管的方法

    公开(公告)号:US20070269913A1

    公开(公告)日:2007-11-22

    申请号:US11750955

    申请日:2007-05-18

    CPC classification number: H01L33/0095 H01L33/20

    Abstract: Disclosed herein is a method of fabricating a light emitting diode. The method comprises preparing a substrate, forming a lower semiconductor layer, an active layer and an upper semiconductor layer on the substrate, forming a photoresist pattern over the upper semiconductor layer such that a sidewall of the photoresist pattern is inclined to an upper surface of the substrate, and sequentially etching the upper semiconductor layer, active layer and lower semiconductor layer using the photoresist pattern as an etching mask. With this structure, since the light emitting diode permits light generated in the active layer to be easily emitted to an outside through the sidewalls of the semiconductor layers, it has improved light emitting efficiency.

    Abstract translation: 本文公开了一种制造发光二极管的方法。 该方法包括在衬底上制备衬底,形成下半导体层,有源层和上半导体层,在上半导体层上形成光致抗蚀剂图案,使得光致抗蚀剂图案的侧壁倾斜于 衬底,并且使用光致抗蚀剂图案作为蚀刻掩模来顺序蚀刻上半导体层,有源层和下半导体层。 利用这种结构,由于发光二极管允许有源层中产生的光通过半导体层的侧壁容易地发射到外部,所以其具有改善的发光效率。

    Light emitting diode having electrode pads
    69.
    发明授权
    Light emitting diode having electrode pads 有权
    具有电极焊盘的发光二极管

    公开(公告)号:US09236532B2

    公开(公告)日:2016-01-12

    申请号:US13330327

    申请日:2011-12-19

    Abstract: The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer. The first light emitting cells are connected in series to the second light emitting cells.

    Abstract translation: 本发明涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括:第一组,其包括彼此并联连接的多个第一发光单元;以及第二组,包括与每个并联连接的多个第二发光单元 其他。 每个第一发光单元和第二发光单元具有包括第一导电型半导体层,第二导电型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层的半导体堆叠, 型半导体层。 第一发光单元的至少两个发光单元共享第一导电型半导体层,并且第二发光单元的至少两个发光单元共享第一导电型半导体层。 第一发光单元与第二发光单元串联连接。

    Light-emitting diode package and method of fabricating the same
    70.
    发明授权
    Light-emitting diode package and method of fabricating the same 有权
    发光二极管封装及其制造方法

    公开(公告)号:US09153745B2

    公开(公告)日:2015-10-06

    申请号:US13825937

    申请日:2010-12-03

    Abstract: A Light Emitting Diode (LED) package and a method of manufacturing the same. The LED package includes a substrate. The substrate defines therein a cavity having a tapered shape, a stepped portion formed on the upper end of the cavity, and a through hole formed in the bottom of the cavity. A conductive film fills the through-hole and is formed on the bottom and the side surfaces of the cavity. An LED has a fluorescent layer thereon, and is flip-chip bonded onto the conductive film. An encapsulant encapsulates the cavity. A Zener diode or a rectifier is provided on the silicon substrate.

    Abstract translation: 发光二极管(LED)封装及其制造方法。 LED封装包括基板。 衬底在其中限定具有锥形形状的空腔,形成在空腔的上端上的阶梯部分和形成在空腔底部的通孔。 导电膜填充通孔并形成在空腔的底部和侧表面上。 LED在其上具有荧光层,并且被倒装芯片接合到导电膜上。 密封剂封装空腔。 在硅衬底上提供齐纳二极管或整流器。

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