Prokaryotic collagen-like proteins and uses thereof
    63.
    发明授权
    Prokaryotic collagen-like proteins and uses thereof 有权
    原核胶原蛋白及其用途

    公开(公告)号:US07544780B2

    公开(公告)日:2009-06-09

    申请号:US11800288

    申请日:2007-05-04

    IPC分类号: A61K38/17 C07K14/00

    CPC分类号: C07K14/78

    摘要: The present invention provides recombinant triple helical proteins or collagen-like proteins comprising a prokaryotic protein or one or more domains of a prokaryotic protein comprising a collagen-like peptide sequence of repeated Gly-Xaa-Yaa triplets and, optionally, one or more domains from a mammalian collagen. Also provided are expression vectors and host cells containing the expression vectors to produce these recombinant proteins and methods of production for the same. Additionally, antibodies are provided that are directed against a recombinant collagen-like protein that, preferably, binds an integrin. Furthermore, a method of screening for potential therapeutic compounds that inhibit the integrin-binding or -interacting activities of recombinant collagen-like proteins.

    摘要翻译: 本发明提供重组三螺旋蛋白或胶原样蛋白,其包含原核蛋白或原核蛋白的一个或多个结构域,其包含重复Gly-Xaa-Yaa三联体的胶原样肽序列和任选的一个或多个结构域 哺乳动物胶原蛋白。 还提供了含有表达载体以产生这些重组蛋白的表达载体和宿主细胞及其生产方法。 此外,提供针对重组胶原样蛋白的抗体,其优选结合整联蛋白。 此外,筛选抑制重组胶原样蛋白的整联蛋白结合或相互作用活性的潜在治疗化合物的方法。

    Prokaryotic collagen-like proteins and uses thereof
    64.
    发明申请
    Prokaryotic collagen-like proteins and uses thereof 有权
    原核胶原蛋白及其用途

    公开(公告)号:US20080014613A1

    公开(公告)日:2008-01-17

    申请号:US11800288

    申请日:2007-05-04

    CPC分类号: C07K14/78

    摘要: The present invention provides recombinant triple helical proteins or collagen-like proteins comprising a prokaryotic protein or one or more domains of a prokaryotic protein comprising a collagen-like peptide sequence of repeated Gly-Xaa-Yaa triplets and, optionally, one or more domains from a mammalian collagen. Also provided are expression vectors and host cells containing the expression vectors to produce these recombinant proteins and methods of production for the same. Additionally, antibodies are provided that are directed against a recombinant collagen-like protein that, preferably, binds an integrin. Furthermore, a method of screening for potential therapeutic compounds that inhibit the integrin-binding or -interacting activities of recombinant collagen-like proteins.

    摘要翻译: 本发明提供重组三螺旋蛋白或胶原样蛋白,其包含原核蛋白或原核蛋白的一个或多个结构域,其包含重复Gly-Xaa-Yaa三联体的胶原样肽序列和任选的一个或多个结构域 哺乳动物胶原蛋白。 还提供了含有表达载体以产生这些重组蛋白的表达载体和宿主细胞及其生产方法。 此外,提供针对重组胶原样蛋白的抗体,其优选结合整联蛋白。 此外,筛选抑制重组胶原样蛋白的整联蛋白结合或相互作用活性的潜在治疗化合物的方法。

    Prokaryotic collagen-like proteins and uses thereof

    公开(公告)号:US20060035336A1

    公开(公告)日:2006-02-16

    申请号:US11245689

    申请日:2005-10-07

    IPC分类号: C07H21/04 C12P21/06 C12N1/21

    摘要: The present invention provides recombinant triple helical proteins or collagen-like proteins comprising a prokaryotic protein or one or more domains of a prokaryotic protein comprising a collagen-like peptide sequence of repeated Gly-Xaa-Yaa triplets and, optionally, one or more domains from a mammalian collagen. Also provided are expression vectors and host cells containing the expression vectors to produce these recombinant proteins and methods of production for the same. Additionally, antibodies are provided that are directed against a recombinant collagen-like protein that, preferably, binds an integrin. Furthermore, a method of screening for potential therapeutic compounds that inhibit the integrin-binding or -interacting activities of recombinant collagen-like proteins.

    Method for improving oxide erosion of tungsten CMP operations
    68.
    发明授权
    Method for improving oxide erosion of tungsten CMP operations 有权
    改善钨CMP操作的氧化物侵蚀的方法

    公开(公告)号:US06569770B2

    公开(公告)日:2003-05-27

    申请号:US09893080

    申请日:2001-06-28

    IPC分类号: H01L2100

    CPC分类号: H01L21/7684 H01L21/3212

    摘要: A new method to prevent oxide erosion in a metal plug process by employing a silicon nitride layer over the oxide is described. An oxide layer is deposited overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the oxide layer. An opening is etched through the silicon nitride layer and into the oxide layer. A barrier metal layer is deposited overlying the silicon nitride layer and into the opening. A metal layer is deposited overlying the barrier metal layer. The metal layer and barrier metal layer are polished away using chemical mechanical polishing (CMP) with a polish stop at the silicon nitride layer. The metal layer forms a metal plug. The silicon nitride layer prevents erosion of the oxide layer during the polishing step to complete formation of a metal plug in the fabrication of an integrated circuit device.

    摘要翻译: 描述了通过在氧化物上使用氮化硅层来防止金属塞过程中的氧化物侵蚀的新方法。 沉积在半导体衬底上的氧化物层。 沉积氮化硅层覆盖在氧化物层上。 通过氮化硅层蚀刻开口并进入氧化物层。 在氮化硅层上沉积阻挡金属层并进入开口。 沉积在阻挡金属层上的金属层。 使用化学机械抛光(CMP)在氮化硅层上抛光停止来抛光金属层和阻挡金属层。 金属层形成金属塞。 氮化硅层在抛光步骤期间防止氧化物层的侵蚀,以在集成电路器件的制造中完成金属插塞的形成。

    Method to form damascene interconnects with sidewall passivation to protect organic dielectrics
    70.
    发明授权
    Method to form damascene interconnects with sidewall passivation to protect organic dielectrics 有权
    形成具有侧壁钝化的镶嵌互连以保护有机电介质的方法

    公开(公告)号:US06358842B1

    公开(公告)日:2002-03-19

    申请号:US09633770

    申请日:2000-08-07

    IPC分类号: H01L213205

    摘要: A new method of forming a damascene interconnect in the manufacture of an integrated circuit device has been achieved. The damascene interconnect may be a single damascene or a dual damascene. Copper conductors are provided overlying a semiconductor substrate. A first passivation layer is provided overlying the copper conductors. A low dielectric constant layer is deposited overlying the first passivation layer. An optional capping layer is deposited overlying the low dielectric constant layer. A photoresist layer is deposited overlying the capping layer. The capping layer and the low dielectric constant layer are etched through to form via openings. The photoresist layer is simultaneously stripped away while forming a sidewall passivation layer on the sidewalls of the via openings using a sulfur-containing gas. Sidewall bowing and via poisoning are thereby prevented. The first passivation layer is etched through to expose the underlying copper conductors. A copper layer is deposited overlying the capping layer and filling the via openings. The copper layer is polished down to complete the damascene interconnects in the manufacture of the integrated circuit device.

    摘要翻译: 已经实现了在集成电路器件的制造中形成镶嵌互连的新方法。 镶嵌互连可以是单镶嵌或双镶嵌。 提供铜导体覆盖在半导体衬底上。 第一钝化层被提供在铜导体上。 沉积在第一钝化层上的低介电常数层。 沉积覆盖在低介电常数层上的可选的覆盖层。 沉积在覆盖层上的光致抗蚀剂层。 覆盖层和低介电常数层被蚀刻通过以形成通孔。 同时剥离光致抗蚀剂层,同时使用含硫气体在通路孔的侧壁上形成侧壁钝化层。 从而防止侧壁弯曲和通过中毒。 蚀刻第一钝化层以暴露下面的铜导体。 沉积覆盖覆盖层并填充通孔的铜层。 铜层被抛光以在集成电路器件的制造中完成镶嵌互连。