公开(公告)号：US08138004B2

公开(公告)日：2012-03-20

申请号：US12821201

申请日：2010-06-23

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L21/00

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

摘要翻译： 光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。 该制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

公开(公告)号：US08120034B2

公开(公告)日：2012-02-21

申请号：US12902642

申请日：2010-10-12

申请人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

发明人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

IPC分类号： H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

摘要翻译： 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。

公开(公告)号：US20120013076A1

公开(公告)日：2012-01-19

申请号：US13258793

申请日：2010-03-30

申请人： Hidekazu Takahashi

发明人： Hidekazu Takahashi

IPC分类号： F16J15/34 ,  F16J3/04

CPC分类号： F16J15/363

摘要： A bellows type mechanical seal is provided that is capable of reducing adverse effects on the bellows. The bellows type mechanical seal includes a first annular member fixed on a rotary shaft, a second annular member resiliently supported by the bellows in a housing axially to the outside of the first annular member, a seal ring having a first end seal face contacting the first annular member and a second end seal face contacting the second annular member, both seal faces being perpendicular to the shaft. A centering member is arranged contacting the inner surface of the seal ring and the inner surface of the second annular member within an annular space formed between both of the inner surfaces and the shaft to keep the sealing ring and the second annular member in alignment with each other.

摘要翻译： 提供了能够减少对波纹管的不利影响的波纹管式机械密封。 波纹管式机械密封件包括固定在旋转轴上的第一环形构件，由壳体中的波纹管沿轴向弹性地支撑在第一环形构件的外部的第二环形构件，密封环，其具有接触第一环形构件的第一端部密封面 环形构件和与第二环形构件接触的第二端部密封面，两个密封面垂直于轴。 定心构件在密封环的内表面和第二环形构件的内表面之间布置在形成在两个内表面和轴之间的环形空间内，以保持密封环和第二环形构件与每个 其他。

公开(公告)号：US08049157B2

公开(公告)日：2011-11-01

申请号：US12949301

申请日：2010-11-18

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H03F3/08 ,  H03K17/78 ,  H01J40/14 ,  H04N3/14 ,  H01L31/062

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US08039353B2

公开(公告)日：2011-10-18

申请号：US12854060

申请日：2010-08-10

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/78

CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

公开(公告)号：US08013369B2

公开(公告)日：2011-09-06

申请号：US12370015

申请日：2009-02-12

申请人： Koichiro Iwata ,  Hidekazu Takahashi

发明人： Koichiro Iwata ,  Hidekazu Takahashi

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1463

摘要： A photoelectric conversion apparatus includes a photoelectric conversion unit with a semiconductor region of a first conduction type, an amplifying transistor, and a contact. The contact supplies, via a semiconductor region of a second conduction type arranged along a side surface and a bottom surface of an element isolation region, a reference voltage to the semiconductor region of the second conduction-type arranged below source and drain regions of the amplifying transistor in a region below a gate electrode of the amplifying transistor.

摘要翻译： 光电转换装置包括具有第一导电类型的半导体区域，放大晶体管和触点的光电转换单元。 接触件通过沿着元件隔离区域的侧表面和底表面布置的第二导电类型的半导体区域提供参考电压，该参考电压被布置在放大器的源极和漏极区域之下的第二导电类型的半导体区域 晶体管在放大晶体管的栅电极下方的区域中。

公开(公告)号：US07982789B2

公开(公告)日：2011-07-19

申请号：US12168506

申请日：2008-07-07

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H04N9/045

摘要： Since pixel signals are not only added in the row direction but also averaged in the column direction, it is possible to sufficiently increase the frame rate even when the number of pixels increases. Additionally, since the spatial centers of gravity of the added or averaged signals are arranged at equal intervals in a Bayer array, it is possible to reduce false color (moiré) generation and suppress the decrease in the spatial resolution.

摘要翻译： 由于像素信号不仅在行方向上相加，而且在列方向上被平均化，所以即使像素数增加，也可以充分提高帧速率。 此外，由于相加或平均信号的空间重心在拜耳阵列中以相等的间隔排列，所以可以减少假色（莫尔）的产生并抑制空间分辨率的降低。

公开(公告)号：US07952634B2

公开(公告)日：2011-05-31

申请号：US12244379

申请日：2008-10-02

申请人： Tomoyuki Noda ,  Tetsuya Itano ,  Koichiro Iwata ,  Hidekazu Takahashi

发明人： Tomoyuki Noda ,  Tetsuya Itano ,  Koichiro Iwata ,  Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H04N5/23248 ,  H04N5/23274 ,  H04N5/345 ,  H04N5/361 ,  H04N5/3658 ,  H04N5/376 ,  H04N5/3765

摘要： An image sensing apparatus includes a pixel array including an optical black region and effective pixel region, and a scanning unit which scans the pixel array. The scanning unit includes a first shift register which scans the optical black region by a shift operation, and a second shift register which scans the effective pixel region by a shift operation. The second shift register starts the shift operation during a first period when the first shift register scans the optical black region, and scans a readout region serving as a partial region of the effective pixel region during a second period following the first period.

摘要翻译： 图像感测装置包括具有光学黑色区域和有效像素区域的像素阵列和扫描像素阵列的扫描单元。 扫描单元包括通过移位操作扫描光学黑色区域的第一移位寄存器和通过移位操作扫描有效像素区域的第二移位寄存器。 第二移位寄存器在第一移位寄存器扫描光学黑区域的第一周期期间开始移位操作，并且在第一周期之后的第二周期期间扫描用作有效像素区域的部分区域的读出区域。

公开(公告)号：US07891339B2

公开(公告)日：2011-02-22

申请号：US12058153

申请日：2008-03-28

申请人： Hidekazu Takahashi ,  Toyomori Tsuiki

发明人： Hidekazu Takahashi ,  Toyomori Tsuiki

IPC分类号： F02M63/00

CPC分类号： F02D41/40 ,  F02D41/2467 ,  F02D41/3845 ,  F02D2041/389 ,  F02D2200/0602 ,  Y02T10/44

摘要： A control apparatus is provided to control a fuel injection apparatus. The fuel injection apparatus includes an accumulator that accumulates high-pressure fuel, at least one injector that injects the high-pressure fuel accumulated in the accumulator into a cylinder of an internal combustion engine, and a pressure sensor that senses fuel pressure in the accumulator and outputs a signal indicative of the sensed fuel pressure. The control apparatus includes an estimator, a determiner, and a setter. The estimator estimates an actual injection duration of the injector. The determiner determines, during the actual injection duration estimated by the estimator, a value of the fuel pressure in the accumulator based on the signal output from the pressure sensor. The setter sets a manipulated variable for controlling fuel injection quantity of the injector based on the value of the fuel pressure determined by the determiner.

摘要翻译： 提供控制装置来控制燃料喷射装置。 燃料喷射装置包括：蓄积器，其积存高压燃料;至少一个喷射器，其将累积在蓄能器中的高压燃料喷射到内燃机的气缸中;以及压力传感器，其感测蓄能器中的燃料压力; 输出表示感测到的燃料压力的信号。 控制装置包括估计器，确定器和设定器。 估计器估计注射器的实际注射持续时间。 在由估计器估计的实际喷射持续时间期间，确定器基于从压力传感器输出的信号确定累加器中的燃料压力的值。 设定器基于由确定器确定的燃料压力的值来设定用于控制喷射器的燃料喷射量的操作变量。

公开(公告)号：US20110003426A1

公开(公告)日：2011-01-06

申请号：US12881582

申请日：2010-09-14

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H01L31/18

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。