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    End point detection for sputtering and resputtering
    61.
    发明申请
    End point detection for sputtering and resputtering 失效
    溅射和再溅射的终点检测

    公开(公告)号：US20050173239A1

    公开(公告)日：2005-08-11

    申请号：US10659902

    申请日：2003-09-11

    申请人： Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

    发明人： Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

    IPC分类号： C23C14/04 ,  C23C14/16 ,  C23C14/32 ,  C23C14/54 ,  C23C14/58 ,  G01N21/68 ,  H01J37/32 ,  H01L21/285 ,  H01L21/66 ,  H01L21/768

    CPC分类号： C23C14/544 ,  C23C14/046 ,  C23C14/165 ,  C23C14/5833 ,  C23C14/5873 ,  G01N21/68 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

    摘要翻译： 可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。 在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。 位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。 在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。 虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。 当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

    Sustained self-sputtering reactor having an increased density plasma
    62.
    发明授权
    Sustained self-sputtering reactor having an increased density plasma 失效
    具有增加密度等离子体的持续自溅射反应器

    公开(公告)号：US06692617B1

    公开(公告)日：2004-02-17

    申请号：US08854008

    申请日：1997-05-08

    申请人： Jianming Fu ,  Peijun Ding ,  Zheng Xu

    发明人： Jianming Fu ,  Peijun Ding ,  Zheng Xu

    IPC分类号： C25C1434

    CPC分类号： H01J37/3447 ,  C23C14/3457 ,  C23C14/35 ,  H01J37/3408

    摘要： A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target. The density of the plasma next to the target is also intensified by positioning an anode grid between the target and the substrate, which provides a more planar geometry. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.

    摘要翻译： 用于物理气相沉积（PVD）的等离子体反应器，也称为溅射，其适于使得从目标溅射的原子物质能够自动维持等离子体而不需要诸如氩的工作气体。 特别适用于铜溅射的自持溅射（SSS）可以通过几种方式实现。 通过减小磁体的尺寸，磁控管的磁体组件的区域中的等离子体的密度增强了固定的目标功率。 为了提供更均匀的溅射，小型磁控管在目标背面以一维或二维扫描。 靠近目标的等离子体的密度也通过在靶和衬底之间设置阳极栅格来加强，这提供了更平面的几何形状。 此外，然后可以将衬底偏置以更有效地控制入射在晶片上的溅射粒子的能量和方向性。

    Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
    67.
    发明授权
    Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma 失效
    用于在用于产生电离金属等离子体的装置中减少衬底表面上的等离子体不均匀性的方法和装置

    公开(公告)号：US06217718B1

    公开(公告)日：2001-04-17

    申请号：US09251690

    申请日：1999-02-17

    申请人： Ralf Holmann ,  Zheng Xu

    发明人： Ralf Holmann ,  Zheng Xu

    IPC分类号： C23C1434

    CPC分类号： H01J37/321 ,  C23C14/32 ,  C23C14/358

    摘要： An apparatus for processing a workpiece by delivering ions to the workpiece, which apparatus includes a processing chamber, a workpiece support having a workpiece support surface in the chamber, a sputtering target in the chamber and a coil for creating an inductively coupled plasma to sputter material from the target, ionize the sputtered material and direct the ionized, sputtered material at the workpiece. The coil is connected to receive an RF current for establishing in the coil an RF voltage having a peak-to-peak amplitude which varies between a minimum value at a first location along the circumference and a maximum value at a second location along the circumference, the first and second locations being substantially diametrically opposite one another, the RF voltage variation producing a corresponding variation in plasma density around the central axis. In order to counteract this plasma density variation, the coil is positioned so that the second location is at a greater distance than the first location from a plane containing the workpiece support surface. The coil may be formed to have a cross section which varies along the circumference from a maximum area at the first location to a minimum area at the second location.

    摘要翻译： 一种用于通过将离子输送到工件来处理工件的装置，该装置包括处理室，在腔室中具有工件支撑表面的工件支撑件，腔室中的溅射靶，以及用于产生感应耦合等离子体以溅射材料的线圈 从目标，离子化溅射的材料，并引导电离溅射材料在工件。 线圈被连接以接收RF电流，以在线圈中建立具有在沿着圆周的第一位置处的最小值和沿着圆周的第二位置处的最大值之间变化的峰 - 峰幅度的RF电压， 第一和第二位置基本上沿径向相反，RF电压变化产生围绕中心轴的等离子体密度的相应变化。 为了抵消该等离子体密度变化，线圈被定位成使得第二位置距离包含工件支撑表面的平面的第一位置更大的距离。 线圈可以形成为具有沿着圆周从第一位置处的最大面积变化到第二位置处的最小面积的横截面。

    Multiple step ionized metal plasma deposition process for conformal step coverage
    68.
    发明授权
    Multiple step ionized metal plasma deposition process for conformal step coverage 失效
    多步电离金属等离子体沉积工艺，用于保形台阶覆盖

    公开(公告)号：US6080285A

    公开(公告)日：2000-06-27

    申请号：US152651

    申请日：1998-09-14

    申请人： Joanna Liu ,  Zheng Xu

    发明人： Joanna Liu ,  Zheng Xu

    IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01L21/285 ,  H01L21/768

    CPC分类号： C23C14/35 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  C23C14/3492 ,  H01L21/2855 ,  H01L21/76843

    摘要： A multiple step process sputter deposits material of uniform thickness on stepped surfaces of an integrated circuit substrate such as the surfaces of a high aspect ratio via or a narrow trench. Material is first sputter deposited at the bottom of the opening at high pressure using a source of high power RF energy connected to a coil in the deposition chamber to couple energy into the plasma. A high power RF bias is applied to the substrate, and a low power DC bias is applied to the sputtering target. The same parameters are repeated in a second step except that the high power RF bias on the substrate support is either reduced to a low power level or reduced to zero (by the end of the second step) to deposit on the lowest quarter of the sidewall of the opening. In a third step, no RF bias is applied to the pedestal remains and the pressure is reduced to a medium pressure state, resulting in a deposition on the second quarter of the sidewall of the opening. In a fourth step, the RF power coupled to the plasma is reduced to a low level, resulting in deposition on the third quarter of sidewall of the opening. Finally, the last quarter of the sidewall of the opening is deposited upon by lowering the pressure further to a low pressure state and applying a high power DC bias to the target.

    摘要翻译： 多步骤工艺在诸如高纵横比通孔或窄沟槽的表面的集成电路基板的台阶表面上溅射沉积具有均匀厚度的材料。 首先使用连接到沉积室中的线圈的高功率RF能量的源在高压下在材料的底部溅射沉积材料，以将能量耦合到等离子体中。 向衬底施加高功率RF偏压，并且向溅射靶施加低功率DC偏压。 在第二步骤中重复相同的参数，除了衬底支撑件上的高功率RF偏压被降低到低功率水平或者减小到零（到第二步骤结束）以沉积在侧壁的最低四分之一上 的开幕。 在第三步骤中，没有RF偏压施加到基座保持件并且压力降低到中等压力状态，导致在开口的侧壁的第二个四分之一上的沉积。 在第四步骤中，耦合到等离子体的RF功率被降低到低水平，导致在开口的侧壁的第三季度上沉积。 最后，通过将压力进一步降低到低压状态并向目标施加高功率DC偏压来沉积开口侧壁的最后四分之一。

    Method for forming aluminum contacts
    70.
    发明授权
    Method for forming aluminum contacts 失效
    铝触点形成方法

    公开(公告)号：US5851364A

    公开(公告)日：1998-12-22

    申请号：US892778

    申请日：1997-07-15

    申请人： Jianming Fu ,  Zheng Xu

    发明人： Jianming Fu ,  Zheng Xu

    IPC分类号： C23C14/06 ,  C23C14/02 ,  C23C14/16 ,  C23C14/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  C23C14/00

    CPC分类号： H01L21/76862 ,  C23C14/025 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76856

    摘要： A process for making an aluminum contact comprising sputter depositing in a contact opening in a semiconductor substrate a first layer of titanium, forming a thin layer of titanium oxide thereover, sputter depositing a titanium nitride layer, smoothing the titanium nitride layer in an argon plasma, and sputter depositing an aluminum contact over the treated titanium nitride layer. The argon plasma treatment smooths the surface of the titanium nitride layer and improves the wettability between this layer and aluminum.

    摘要翻译： 一种制造铝接触的方法，包括在半导体衬底中的接触开口中溅射沉积第一层钛，在其上形成薄层的氧化钛，溅射沉积氮化钛层，在氩等离子体中平滑氮化钛层， 并在处理的氮化钛层上溅射沉积铝接触。 氩等离子体处理使氮化钛层的表面平滑，并且改善了该层与铝之间的润湿性。