公开(公告)号：US20180002826A1

公开(公告)日：2018-01-04

申请号：US15636926

申请日：2017-06-29

申请人： Infineon Technologies AG

发明人： Johannes Freund ,  Thomas Wuebben ,  Helmut Oefner ,  Hans-Joachim Schulze

IPC分类号： C30B15/04 ,  B28D5/04 ,  H01L21/66 ,  H01L29/66

CPC分类号： C30B15/04 ,  B28D5/00 ,  B28D5/04 ,  C30B15/02 ,  H01L22/14 ,  H01L22/20 ,  H01L29/66325 ,  H01L29/7393

摘要： In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

公开(公告)号：US09852948B2

公开(公告)日：2017-12-26

申请号：US15015061

申请日：2016-02-03

申请人： National Taiwan University of Science and Technology

发明人： Bing-Joe Hwang ,  Wei-Nien Su ,  Jeng-Ywan Jeng ,  Yuan-Han Chu ,  Tse-Ming Chiu ,  Hsin-Fu Teng

IPC分类号： H01L21/306 ,  H01L21/78 ,  B28D5/04 ,  H01L21/3063

CPC分类号： H01L21/78 ,  B28D5/04 ,  H01L21/30604 ,  H01L21/3063

摘要： A method of processing a substrate is disclosed. The method includes the following steps: providing a substrate body having a surface; placing a die on the surface, wherein the die acts as a catalyst; immersing the substrate body and the die in a reaction solution; and processing the substrate body via a chemical reaction occurring on the surface through the reaction solution and the catalyst.

公开(公告)号：US09789580B2

公开(公告)日：2017-10-17

申请号：US14736559

申请日：2015-06-11

申请人： Chen-Chia Chou

发明人： Chen-Chia Chou ,  I-Wei Su ,  Hao-Yen Liao ,  Kuei-Chih Feng

IPC分类号： B24B1/04 ,  B28D5/04

CPC分类号： B24B1/04 ,  B28D5/04 ,  B28D5/047

摘要： A tool unit applied to ultrasonic machining, includes an amplitude transformer, a machining head and a connecting portion. The machining head has a micron-sized array structure. With the connecting portion, the amplitude transformer and the machining head are assembled together and the connecting portion has a change in shape. The machining head includes a substrate and at least one diamond layer. An upper surface of substrate touches the amplitude transformer or the connecting portion. And the diamond layer is disposed on an lower surface of substrate. The material of the substrate is selected from a group of a steel material with thermal expansion coefficient ranged from 10.70×10−6K−1 to 17.30×10−6K−1, tungsten carbide and combination thereof. The material of the diamond layer is selected from a group of a diamond material with thermal expansion coefficient ranged from 1.00×10−6K−1 to 2.50×10−6K−1, a polycrystalline diamond, a diamond sintered body and combination thereof.

公开(公告)号：US20170016140A1

公开(公告)日：2017-01-19

申请号：US15124319

申请日：2015-03-30

申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives

发明人： Denis CHAVRIER ,  Jean-Paul GARANDET ,  Etienne PIHAN

IPC分类号： C30B11/00 ,  C30B29/06 ,  H01L31/18 ,  B05D7/22 ,  B05D3/00 ,  B28D5/04 ,  C30B11/02 ,  C30B33/00

CPC分类号： C30B11/002 ,  B05D3/007 ,  B05D7/22 ,  B28D5/04 ,  C30B11/02 ,  C30B29/06 ,  C30B33/00 ,  C30B33/06 ,  C30B35/002 ,  H01L31/1804 ,  H01L31/1864

摘要： A crucible for formation of a crystalline material by solidification by growth on seed, including a bottom, at least one side wall orthogonal to the bottom of the crucible, and at least two marks extending on the inner surface of the at least one side wall in an orthogonal direction to the bottom of the crucible, for materialising the position of at least one seed designed to be positioned at the bottom of the crucible, the seed including at least first and second surfaces orthogonal to the bottom of the crucible. The respective positions of at least two of the marks on at least one of the side walls define, in the crystalline material, a first cutting plane tangent to the first surface of the seed and a second cutting plane tangent to the second surface of the seed.

摘要翻译： 一种用于通过在种子上生长固化形成结晶材料的坩埚，包括底部，与坩埚底部正交的至少一个侧壁，以及在至少一个侧壁的内表面上延伸的至少两个标记 与坩埚底部的正交方向，用于实现设计成位于坩埚底部的至少一个种子的位置，种子至少包括与坩埚底部正交的第一和第二表面。 在至少一个侧壁上的至少两个标记的相应位置在结晶材料中限定与种子的第一表面相切的第一切割平面和与种子的第二表面相切的第二切割平面 。

公开(公告)号：US20160325466A1

公开(公告)日：2016-11-10

申请号：US15109907

申请日：2015-01-09

申请人： KOBELCO RESEARCH INSTITUTE, INC.

发明人： Kazuo YOSHIKAWA ,  Masanori ANAN ,  Akinori URATSUKA ,  Yoshitake MATSUSHIMA

IPC分类号： B28D1/08

CPC分类号： B28D1/088 ,  B24B27/0633 ,  B28D5/04

摘要： A method for cutting a workpiece except silicon includes moving a resin-coated saw wire having a resin coating that covers the surface of a steel wire. In the method, at least one of the resin-coated saw wire or the workpiece is swung, a diamond abrasive grain having an average grain size of more than 0 μm and 8 μm or less is sprayed onto the resin-coated saw wire, and a wire running speed of the resin-coated saw wire is 800 m/min or higher.

摘要翻译： 除了硅之外的工件的切割方法包括移动覆盖钢丝表面的树脂涂层的树脂涂覆的锯线。 在该方法中，树脂涂覆的锯线或工件中的至少一个摆动，将平均粒径大于0μm和8μm或更小的金刚石磨粒喷涂到涂覆有树脂的锯线上， 树脂被覆线锯的线速度为800m /分钟以上。

公开(公告)号：US20160052098A1

公开(公告)日：2016-02-25

申请号：US14736559

申请日：2015-06-11

申请人： Chen-Chia Chou

发明人： Chen-Chia CHOU ,  I-Wei SU ,  Hao-Yen LIAO ,  Kuei-Chih FENG

IPC分类号： B24B1/04

CPC分类号： B24B1/04 ,  B28D5/04 ,  B28D5/047

摘要： A tool unit applied to ultrasonic machining, includes an amplitude transformer, a machining head and a connecting portion. The machining head has a micron-sized array structure. With the connecting portion, the amplitude transformer and the machining head are assembled together and the connecting portion has a change in shape. The machining head includes a substrate and at least one diamond layer. An upper surface of substrate touches the amplitude transformer or the connecting portion. And the diamond layer is disposed on an lower surface of substrate. The material of the substrate is selected from a group of a steel material with thermal expansion coefficient ranged from 10.70×10−6K−1 to 17.30×10−6K−1 , tungsten carbide and combination thereof. The material of the diamond layer is selected from a group of a diamond material with thermal expansion coefficient ranged from 1.00×10−6K−1 to 2.50×10−6K−1, a polycrystalline diamond, a diamond sintered body and combination thereof.

摘要翻译： 应用于超声波加工的工具单元包括振幅变压器，加工头和连接部。 加工头具有微米尺寸的阵列结构。 利用连接部分，振幅变压器和加工头组装在一起，并且连接部分具有形状变化。 加工头包括基底和至少一个金刚石层。 衬底的上表面接触振幅变压器或连接部分。 并且金刚石层设置在基板的下表面上。 基材的材料选自热膨胀系数为10.70×10-6K-1至17.30×10-6K-1，碳化钨及其组合的一组钢材。 金刚石层的材料选自热膨胀系数范围为1.00×10-6K-1至2.50×10-6K-1的金刚石材料，多晶金刚石，金刚石烧结体及其组合。

公开(公告)号：US08900972B2

公开(公告)日：2014-12-02

申请号：US13680873

申请日：2012-11-19

申请人： MEMC Singapore, Pte. Ltd

发明人： Dale A. Witte ,  Jihong John Chen ,  Travis L. Hambach ,  Linda K. Swiney

IPC分类号： H01L21/00 ,  C30B33/00 ,  C30B35/00 ,  B28D5/04 ,  B23D1/00 ,  C30B33/06

CPC分类号： B23D1/00 ,  B28D5/04 ,  C30B11/14 ,  C30B29/06 ,  C30B33/06 ,  C30B35/00 ,  Y10T29/49995 ,  Y10T29/52 ,  Y10T117/1016

摘要： A method of producing rectangular seed bricks for use in semiconductor or solar manufacturing is disclosed. The method includes connecting an alignment layer to a top surface of a template, drawing alignment lines on the alignment layer to demarcate a plurality of nodes, connecting cylindrical rods to the alignment layer such that a center of each rod is aligned with a corresponding node, and slicing through the rods and the alignment layer with a wire web to produce rectangular seed bricks.

摘要翻译： 公开了一种制造用于半导体或太阳能制造的矩形种子砖的方法。 该方法包括将对准层连接到模板的顶表面，在对准层上绘制对准线以划定多个节点，将圆柱形杆连接到对准层，使得每个杆的中心与相应的节点对齐， 并通过杆和对准层用线网切片以产生矩形种子砖。

公开(公告)号：US20140261368A1

公开(公告)日：2014-09-18

申请号：US14351942

申请日：2012-10-15

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Kazuya Nakagawa

IPC分类号： B28D1/08

CPC分类号： B28D1/08 ,  B23D55/082 ,  B23D55/086 ,  B23D59/04 ,  B24B27/06 ,  B28D5/04 ,  B28D5/045

摘要： The present invention provides a bandsaw cutting apparatus including an actuator configured to move static pressure pads forward and backward in a rotating direction of a blade, and a controller configured to control a movement distance and a movement speed of the static pressure pads to be moved by the actuator, wherein the ingot is cut by feeding the blade relatively downward toward and below the ingot while a rotating blade is guided with static pressure pads, and the movement of the static pressure pads is controlled with the controller. The apparatus can stably suppress a displacement of the blade during cutting, thereby cutting the ingot into blocks or sample wafers for crystal quality evaluation stably with good quality cut surface at a higher cutting rate and extending the lifetime of the blade.

摘要翻译： 本发明提供了一种带锯切割装置，其包括致动器，该致动器构造成在叶片的旋转方向上向前和向后移动静压垫;以及控制器，被配置为控制静压垫的移动距离和运动速度， 致动器，其中通过在旋转叶片被静压垫引导的同时向刀片向下并且在刀片下方供给刀片来切割锭，并且通过控制器控制静压片的移动。 该设备可以稳定地抑制切割期间刀片的位移，从而以更高的切割速率以优良的切割面稳定地将锭切割成用于晶体质量评估的块或样品晶片，并延长刀片的寿命。

公开(公告)号：US20100117199A1

公开(公告)日：2010-05-13

申请号：US12596149

申请日：2008-10-15

申请人： Christopher Eisele

发明人： Christopher Eisele

IPC分类号： H01L29/02 ,  B26D7/06

CPC分类号： B28D5/0082 ,  B23K26/0624 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/04 ,  Y10T83/0448 ,  Y10T83/202

摘要： The invention relates to a method and an apparatus for the production of thin disks or films (3) from semiconductor bodies (1). Advantageously, a laser is used as a cutting tool (2). The beam of the laser is focused using suitable optical means, for example a cylindrical lens, in such a way that a linear intensity profile is created rather than a point-shaped one in order to cut the semiconductor film (3). Furthermore, it is meaningful to place several linear intensity profiles in a row in such a way that a parting line is created across the entire width of the semiconductor body (1), such that the entire cutting line can be removed quasi continuously, at the repetition rate of the laser. Ideally, the peripheral beams of the focused laser beam, which face the semiconductor body (1), should extend parallel to the edge of the semiconductor body (1). Near the tip (9) of the cutting tool (2), on the side facing the semiconductor film (3), the peripheral beams follow the bending radius of the semiconductor film (3), and an increasing gap is created as the distance from the focus (the tip of the cutting tool 2) increases.

摘要翻译： 本发明涉及从半导体本体（1）制造薄片或薄膜（3）的方法和设备。 有利地，激光被用作切削工具（2）。 为了切割半导体膜（3），使用合适的光学装置（例如圆柱形透镜）聚焦激光束，使得产生线性强度分布而不是点状分布。 此外，将多个线性强度分布放置在一行中是有意义的，使得在半导体本体（1）的整个宽度上形成分型线，使得整个切割线可以在 激光的重复率。 理想地，面对半导体主体（1）的聚焦激光束的外围光束应平行于半导体本体（1）的边缘延伸。 在切割工具（2）的尖端（9）附近，在面向半导体膜（3）的一侧上，周边光束遵循半导体膜（3）的弯曲半径，并且随着距离 焦点（切削工具2的尖端）增加。

公开(公告)号：US07637801B2

公开(公告)日：2009-12-29

申请号：US11341440

申请日：2006-01-30

申请人： Kimihiko Kajimoto ,  Junzou Wakuda

发明人： Kimihiko Kajimoto ,  Junzou Wakuda

IPC分类号： B24B1/00

CPC分类号： B24B37/042 ,  B28D5/04

摘要： A method of manufacturing a solar cell including a silicon wafer is provided. In certain example instances, the method may include flattening fine roughness existing on a side face of a silicon block or a silicon stack used for manufacturing the silicon wafer for use in the solar cell.

摘要翻译： 提供一种制造包括硅晶片的太阳能电池的方法。 在某些示例中，该方法可以包括存在于硅块或用于制造用于太阳能电池的硅晶片的硅堆叠的侧面上的平坦化细粗糙度。