公开(公告)号：US20040251477A1

公开(公告)日：2004-12-16

申请号：US10485695

申请日：2004-02-03

发明人： Eric Pourquier ,  Louis Brissot ,  Gilles Simon ,  Alain Jutant ,  Philippe Rommeveaux

IPC分类号： H01L021/00 ,  H01L027/148 ,  H01L029/768 ,  H01L031/00

CPC分类号： H01L27/14667 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02162

摘要： The invention relates to very small-sized color image sensors. The sensor according to the invention is made by the following method: the formation, on the front face of the semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone comprising photosensitive zones (12) covered with conductive and insulating layers (14, 16) enabling the collection of electrical charges generated in the photosensitive zones, the transfer of the wafer (10) by its front face against the front face of a supporting substrate (20), the elimination of the major part of the thickness of the semiconductive wafer, leaving a very fine semiconductive layer (30) on the substrate, this fine semiconductive layer comprising the photosensitive zones, the deposition and etching of color filters (18) on the semiconductive layer thus thinned.

摘要翻译： 本发明涉及非常小尺寸的彩色图像传感器。 根据本发明的传感器通过以下方法制造：在半导体晶片（10）的正面上形成包括图像检测电路并且各自对应于各自的图像传感器的一系列有源区（ZA） 每个活动区域包括由导电和绝缘层（14,16）覆盖的光敏区域（12），能够收集在感光区域中产生的电荷，晶片（10）的前表面相对于 支撑衬底（20），消除半导体晶片的主要部分的厚度，在衬底上留下非常精细的半导体层（30），该精细半导体层包括感光区，滤色器的沉积和蚀刻 18）在半导体层上变薄。

公开(公告)号：US20040232454A1

公开(公告)日：2004-11-25

申请号：US10869629

申请日：2004-06-17

申请人： Toyoda Gosei Co., Ltd.

发明人： Toshiya Uemura ,  Atsuo Hirano ,  Koichi Ota ,  Naohisa Nagasaka

IPC分类号： H01L029/768

CPC分类号： H01L33/38 ,  H01L24/05 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/02166 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/181 ,  H01L2924/00

摘要： An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained. That is, in the present invention, in a device having an outermost diameter of not smaller than 700 nullm, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 nullm.

摘要翻译： 本发明的目的是提供一种能够获得均匀发光的大尺寸发光装置。 也就是说，在本发明中，在最外径为700μm以上的装置中，从n电极到p电极的最远点的距离选择为不大于500μm。

公开(公告)号：US20040232452A1

公开(公告)日：2004-11-25

申请号：US10485540

申请日：2004-02-02

发明人： Michiaki Tsuneoka ,  Koji Hashimoto ,  Masaaki Hayama ,  Takeo Yasuho

IPC分类号： H01L029/768

CPC分类号： H01L23/552 ,  H01L23/3121 ,  H01L23/60 ,  H01L24/83 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83851 ,  H01L2924/00011 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/284 ,  H01L2224/29075 ,  H01L2924/00014

摘要： A module includes a component, a circuit board having the component mounted thereon, a first grounding pattern formed on an outermost periphery of a surface portion of the circuit board; a first sealer provided on the circuit board and having a dimension projected on the circuit board, and a metal film covering the sealer and connected to the grounding pattern. The dimension of the first dealer is smaller than an outside dimension of the circuit board. The first sealer is made of first resin and sealing the component. The module has a low profile and is adequately shielded.

摘要翻译： 模块包括部件，具有安装在其上的部件的电路板，形成在电路板的表面部分的最外周上的第一接地图案​​; 设置在电路板上并具有投影在电路板上的尺寸的第一密封器，以及覆盖密封件并连接到接地图案的金属膜。 第一经销商的尺寸小于电路板的外部尺寸。 第一个封口机由第一个树脂制成并密封组件。 该模块具有低外形并且被充分屏蔽。

公开(公告)号：US20040195596A1

公开(公告)日：2004-10-07

申请号：US10754439

申请日：2004-01-09

发明人： Kae-Horng Wang ,  Ralf Staub ,  Matthias Kronke

IPC分类号： H01L029/768

CPC分类号： H01L27/10888 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/10829

摘要： One (or more) contacts are produced on one or more active areas of a semiconductor wafer, it being possible for one or more isolated control lines to be arranged on the active areas with which contact is to be made. The control lines may, for example, be gate lines. The semiconductor component is fabricated in the following way. application of a polysilicon layer to the semiconductor wafer, patterning of the polysilicon layer, in order to produce a polysilicon contact above the active area, the polysilicon contact at least partly covering the two control lines, application of a first insulator layer to the semiconductor wafer, with the polysilicon contact being embedded, partial removal of the first insulator layer, so that at least the upper surface of the polysilicon contact is uncovered, and application of a metal layer to the semiconductor wafer in order to make electrical contact with the polysilicon contact.

摘要翻译： 在半导体晶片的一个或多个有源区上产生一个（或多个）触点，一个或多个隔离的控制线可以布置在与其进行接触的有源区上。 控制线可以例如是栅极线。 以下列方式制造半导体元件。 向半导体晶片施加多晶硅层，构图多晶硅层，以便在有源区上方产生多晶硅接触，多晶硅接触至少部分地覆盖两个控制线，向半导体晶片施加第一绝缘体层 ，其中多晶硅接触被嵌入，部分地去除第一绝缘体层，使得至少多晶硅接触的上表面未被覆盖，并且将金属层施加到半导体晶片以与多晶硅接触电接触 。

公开(公告)号：US20040150002A1

公开(公告)日：2004-08-05

申请号：US10354687

申请日：2003-01-30

申请人： SMART PIXEL, INC.

发明人： Christoph H. Grein ,  Silviu Velicu ,  Sivalingam Sivananthan

IPC分类号： H01L027/148 ,  H01L029/768 ,  H01L031/0328 ,  H01L031/0336

CPC分类号： H01L31/101 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/1032 ,  H01L31/109

摘要： A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. At least one extraction region is disposed on a first side of the active region and has a majority carrier of the second conductivity type. Carriers of the second conductivity type are extracted from the active region and into the extraction region under a condition of reverse bias. At least one exclusion region is disposed on a second side of the active region and has a majority carrier of the first conductivity type. The exclusion region prevents entry of its minority carriers, which are of the second conductivity type, into the active region while in a condition of reverse bias. The exclusion region includes a superlattice with a plurality of layers.

摘要翻译： 光敏二极管具有限定第一导电类型的多数载流子和第二导电类型的少数载流子的有源区。 至少一个提取区域设置在有源区域的第一侧上并且具有第二导电类型的多数载流子。 第二导电类型的载体在反向偏压的条件下从有源区域提取并进入提取区域。 至少一个排除区域设置在有源区域的第二侧上并且具有第一导电类型的多数载流子。 排斥区域在反向偏压的条件下防止其第二导电类型的少数载流子进入有源区域。 排除区域包括具有多个层的超晶格。

公开(公告)号：US20040113181A1

公开(公告)日：2004-06-17

申请号：US10319204

申请日：2002-12-13

发明人： Guy C. Wicker

IPC分类号： H01L029/768

CPC分类号： H01L21/76838 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/1691

摘要： Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance. The method may further include forming a phase change material between the two electrodes.

摘要翻译： 简而言之，根据本发明的实施例，提供了一种横向相变存储器和制造相变存储器的方法。 该方法可以包括在衬底之上形成导体材料并且图案化导体材料以从导体材料形成两个电极，其中两个电极通过亚光刻距离分开。 该方法可以进一步包括在两个电极之间形成相变材料。

公开(公告)号：US20040099886A1

公开(公告)日：2004-05-27

申请号：US10303897

申请日：2002-11-26

发明人： Howard Rhodes ,  Jeff McKee

IPC分类号： H01L029/768 ,  H01L027/148

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609

摘要： A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.

摘要翻译： 公开了连接到CMOS成像器的各种光敏元件和/或电元件的电荷存储电容器以及形成方法。 电荷存储电容器可以完全在CMOS成像器的场氧化物区域上形成，整个在像素传感器单元的有效区域上，或部分地在场氧化物区域上，部分地在像素传感器单元的有源像素区域上形成。

公开(公告)号：US20040061146A1

公开(公告)日：2004-04-01

申请号：US10261796

申请日：2002-09-30

发明人： Shiann-Tsong Tsai ,  Yu-Ming Hsu ,  Wen-Lung Wu ,  Kuen-Huang Chen ,  Wen-Sheng Su ,  Chin-Hsing Lin

IPC分类号： H01L029/768

CPC分类号： H01L25/50 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00

摘要： A multi-chip semiconductor package and a fabrication method thereof are provided. A substrate having an upper surface and a lower surface is prepared. At least a first chip is mounted on the upper surface of the substrate. A non-conductive material is applied over predetermined area on the first chip and the upper surface of the substrate. At least a second chip is mounted on the non-conductive material, and formed with at least a suspending portion free of interference in position with the first chip, wherein the non-conductive material is dimensioned in surface area at least corresponding to the second chip, so as to allow the suspending portion to be supported on the non-conductive material. With the second chip being completely supported on the non-conductive material without causing a conventional chip-crack problem, structural intactness and reliability can be effectively assured for fabricated-package products.

公开(公告)号：US20040036093A1

公开(公告)日：2004-02-26

申请号：US10450310

申请日：2003-06-11

发明人： Neil Thomson Gordon ,  Anthony Michael White ,  Charles Thomas Elliott

IPC分类号： H01L029/768

CPC分类号： H01L31/101 ,  H01L29/868 ,  H01L31/02966 ,  H01L31/105

摘要： A multi-layer semiconductor diode having a layer of wide bandgap material located between the active layer and a first contact zone, where the active layer and additional wide bandgap layer are of one dopant type, and the first contact zone is of the opposite dopant type. A specific embodiment of the invention comprises a stack formed from a first contact zone (4) of p-type material, a lightly doped p-type active layer (2), an additional p layer (20) and a second contact zone (6) of n-type material. The diode may be used as an infrared detector or a negative luminescent source.

摘要翻译： 一种多层半导体二极管，其具有位于有源层和第一接触区之间的宽带隙材料层，其中有源层和附加宽带隙层是一种掺杂剂型，并且第一接触区具有相反的掺杂剂型 。 本发明的具体实施方案包括由p型材料的第一接触区（4），轻掺杂的p型有源层（2），附加p层（20）和第二接触区（6）形成的堆叠 ）的n型材料。 二极管可以用作红外检测器或负极发光源。

公开(公告)号：US20030205739A1

公开(公告)日：2003-11-06

申请号：US09928194

申请日：2001-08-11

发明人： Kurt E. Petersen ,  Nadim Maluf ,  Wendell McCulley ,  John Logan ,  Erno Klaasen ,  Jan Mark Noworolski

IPC分类号： H01L029/768 ,  H01L027/148

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10S73/01

摘要： In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

摘要翻译： 一方面，本发明提供了包括第一单晶硅晶片层的半导体传感器。 在第一晶片层中形成单晶硅结构。 该结构包括两个相对布置的基本垂直的主表面和两个相对布置的大体水平的小的表面。 主表面与次表面的纵横比至少为5：1。 包括凹陷区域的载体被固定到第一晶片层，使得所述结构与凹陷区域相对地悬挂。