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公开(公告)号：US20170263323A1
公开(公告)日：2017-09-14
申请号：US15275362
申请日：2016-09-24
Applicant: STMicroelectronics S.r.l
Inventor： Giovanni Campardo , Salvatore Polizzi
CPC classification number: G11C16/26 , G11C7/12 , G11C7/18 , G11C16/0408 , G11C16/08 , G11C16/24 , G11C16/28 , G11C2207/002 , G11C2207/12
Abstract: A circuit for reading a memory cell of a non-volatile memory device provided with a memory array with cells arranged in wordlines and bitlines, among which a first bitline, associated to the memory cell, and a second bitline, has: a first circuit branch associated to the first bitline and a second circuit branch associated to the second bitline, each with a local node, coupled to which is a first dividing capacitor, and a global node, coupled to which is a second dividing capacitor; a decoder stage for coupling the local node to the first or second bitlines and coupling the global node to the local node; and a differential comparator stage supplies an output signal indicative of the datum stored; and a control unit for controlling the decoder stage, the coupling stage, and the differential comparator stage for generation of the output signal.
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公开(公告)号：US20170253477A1
公开(公告)日：2017-09-07
申请号：US15602760
申请日：2017-05-23
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Lorenzo BALDO , Enri DUQI , Flavio Francesco VILLA
CPC classification number: B81B7/0045 , B81B3/0072 , B81B2201/0228 , B81B2201/025 , B81B2203/0127 , B81B2203/0163 , B81B2203/0315 , B81B2207/012 , B81C1/00182 , B81C1/00325 , B81C2201/0116 , B81C2201/0173 , B81C2203/0785 , G02B26/0858
Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.
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公开(公告)号：US09753279B2
公开(公告)日：2017-09-05
申请号：US14564237
申请日：2014-12-09
Inventor： Benedetto Vigna , Marco Ferrera , Sonia Costantini , Marco Salina
CPC classification number: G02B26/0841 , B81B3/0045 , B81B2201/042 , B81B2203/0154 , B81C1/00198 , G02B27/1006 , H02N1/002 , H02N1/006 , H04N9/3129 , H04N9/3135 , Y10T29/49002
Abstract: An electrostatically actuated oscillating structure includes a first stator subregion, a second stator subregion, a first rotor subregion and a second rotor subregion. Torsional elastic elements mounted to the first and second rotor subregions define an axis of rotation. A mobile element is coupled to the torsional elastic elements. The stator subregions are electrostatically coupled to respective regions of actuation on the mobile element. The stator subregions exhibit an element of structural asymmetry such that the electrostatic coupling surface between the first stator subregion and the first actuation region differs from the electrostatic coupling surface between the second stator subregion and the second actuation region.
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764.发明授权公开(公告)号：US09752944B2
公开(公告)日：2017-09-05
申请号：US14656391
申请日：2015-03-12
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Alberto Pagani
CPC classification number: G01L9/0054 , G01L9/0052 , G01L27/002 , Y10T29/42
Abstract: A microelectromechanical sensing structure having a membrane region including a membrane that undergoes deformation as a function of a pressure and a first actuator that is controlled in a first operating mode and a second operating mode, the first actuator being such that, when it operates in the second operating mode, it contacts the membrane region and deforms the membrane in a way different from when it operates in the first operating mode.
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公开(公告)号：US09739613B2
公开(公告)日：2017-08-22
申请号：US15140349
申请日：2016-04-27
Applicant: STMicroelectronics S.r.l.
Inventor： Luca Coronato , Gabriele Cazzaniga
IPC: G01C19/5712 , G01C19/5747 , G01C19/02
CPC classification number: G01C19/5747 , G01C19/5712 , G01P9/02 , Y10T29/49002
Abstract: An integrated MEMS structure includes a driving assembly anchored to a substrate and actuated with a driving movement. A pair of sensing masses suspended above the substrate and coupled to the driving assembly via elastic elements is fixed in the driving movement and performs a movement along a first direction of detection, in response to an external stress. A coupling assembly couples the pair of sensing masses mechanically to couple the vibration modes. The coupling assembly is formed by a rigid element, which connects the sensing masses and has a point of constraint in an intermediate position between the sensing masses, and elastic coupling elements for coupling the rigid element to the sensing masses to present a first stiffness to a movement in phase-opposition and a second stiffness, greater than the first, to a movement in phase, of the sensing masses along the direction of detection.
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Patent Agency Ranking
766.发明授权公开(公告)号：US09730285B2
公开(公告)日：2017-08-08
申请号：US15162289
申请日：2016-05-23
Applicant: STMicroelectronics S.r.l.
Inventor： Davide Lena , Simone Crespi
IPC: H05B33/08
CPC classification number: H05B33/083 , H05B33/0812 , H05B33/0815 , H05B33/0842
Abstract: An electronic circuit drives a plurality of LED strings connected in series. The electronic circuit includes a regulation module corresponding to each LED string, with the regulation module connected to the cathode terminal of the corresponding LED string. Each regulation module is further coupled to receive a reference voltage in phase with a rectified a.c. voltage. The regulation modules execute in turn and in sequence a current-regulation phase as a function of a trend of the reference voltage. Each regulation module, when executing the current-regulation phase, functions to regulate the current that flows in the corresponding LED string and in any previous LED strings in the series connection so that the regulated current is proportional to the reference voltage.
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公开(公告)号：US09727306B2
公开(公告)日：2017-08-08
申请号：US14508126
申请日：2014-10-07
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Giuseppe Guarnaccia , Salvatore Marco Rosselli
IPC: G06F5/10
CPC classification number: G06F5/10 , G06F2205/102 , G06F2205/106
Abstract: A bi-synchronous electronic device may include a FIFO memory circuit configured to store data, and a first digital circuit coupled to the FIFO memory circuit and configured to operate based upon a first clock signal and a write pointer, write a data burst to the FIFO memory circuit, thereby causing a jump in the write pointer to a new position, and write a burst indicator associated with the new position in the FIFO memory circuit. The bi-synchronous electronic device may include a second digital circuit coupled to the FIFO memory circuit and configured to operate based upon a second clock signal different from the first clock signal, read from the FIFO memory circuit based upon a read pointer, and synchronize the read pointer to the write pointer based upon the burst indicator.
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公开(公告)号：US20170222626A1
公开(公告)日：2017-08-03
申请号：US15014260
申请日：2016-02-03
Applicant: STMicroelectronics S.r.l.
Inventor： Marco Orazio Cavallaro
IPC: H03H11/04
CPC classification number: H03H11/0427 , H03H11/0422
Abstract: An active high gain filter includes high value resistances in feedback implemented using a negative resistance circuit configuration. The high value resistance is implemented using two or smaller resistances connected in the negative resistance circuit configuration. This implementation permits integration of the filter circuit using less occupied area while still providing an accurate transfer function response.
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769.发明申请公开(公告)号：US20170221841A1
公开(公告)日：2017-08-03
申请号：US15251355
申请日：2016-08-30
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Paolo Colpani , Antonella Milani , Lucrezia Guarino , Andrea Paleari
IPC: H01L23/00
CPC classification number: H01L24/05 , H01L23/3192 , H01L23/50 , H01L23/522 , H01L23/562 , H01L24/00 , H01L24/03 , H01L2224/02205 , H01L2224/02215 , H01L2224/04042 , H01L2224/05018 , H01L2224/05025 , H01L2224/05082 , H01L2224/05147 , H01L2224/05562 , H01L2224/05655 , H01L2924/04642 , H01L2924/05042 , H01L2924/351
Abstract: In one embodiment, a semiconductor device includes one or more metallizations, such as, e.g., Cu-RDL metallizations, provided on a passivation layer over a dielectric layer. A via is provided through the passivation layer and the dielectric layer in the vicinity of the corners of the metallization. The via may be a “dummy” via without electrical connections to an active device and may be provided at a distance between approximately 1 micron (10−6 m.) and approximately 10 micron (10−5 m.) from each one of said converging sides landing on an underlying metal layer.
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公开(公告)号：US09718675B2
公开(公告)日：2017-08-01
申请号：US14971639
申请日：2015-12-16
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Barbara Simoni , Carlo Valzasina , Lorenzo Corso
CPC classification number: B81B7/0074 , B81B7/007 , B81B7/008 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81B2207/093 , B81B2207/096 , B81B2207/097 , B81C1/0023 , B81C2203/0118 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.
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