公开(公告)号：US10475678B2

公开(公告)日：2019-11-12

申请号：US15928343

申请日：2018-03-22

申请人： Advanced Ion Beam Technology, Inc.

发明人： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC分类号： H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/683

摘要： Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US09431247B2

公开(公告)日：2016-08-30

申请号：US14752522

申请日：2015-06-26

申请人： ADVANCED ION BEAM TECHNOLOGY, INC.

发明人： Zhimin Wan ,  Kourosh Saadatmand ,  Wilhelm P. Platow ,  Ger-Pin Lin ,  Ching-I Li ,  Rekha Padmanabhan ,  Gary N. Cai

IPC分类号： H01L21/265 ,  H01J37/302

CPC分类号： H01L21/26586 ,  H01J37/3026 ,  H01J37/3171 ,  H01J2237/0835 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31706

摘要： A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

摘要翻译： 提供了一种用于离子注入的方法。 首先，提供非平行离子束。 此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。 特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面 跨越非平行离子束一次，仅一次。 这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰， 发散离子束或会聚离子束。

公开(公告)号：US20150255242A1

公开(公告)日：2015-09-10

申请号：US14201747

申请日：2014-03-07

申请人： ADVANCED ION BEAM TECHNOLOGY, INC.

发明人： William DIVERGILIO ,  Stephen SAVAS ,  Susan FELCH ,  Tienyu SHENG ,  Hao CHEN

IPC分类号： H01J37/08 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/061 ,  H01J2237/083

摘要： A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.

摘要翻译： 用于工件的材料改性的等离子体材料改性系统可以包括耦合到处理室的等离子体源室。 构造成支撑工件的支撑结构可以设置在处理室内。 等离子体源室可以包括第一多个磁体，第二多个磁体和围绕等离子体源室中的等离子体产生区域的第三多个磁体。 等离子体源室可以被配置为产生在等离子体产生区域内具有离子的等离子体。 第三多个磁体可以被配置为在等离子体产生区域内限制具有大于10eV的能量的等离子体的大部分电子，同时允许来自等离子体的离子通过第三多个磁体进入处理室，用于材料修饰 工件。

公开(公告)号：US08993979B2

公开(公告)日：2015-03-31

申请号：US14191364

申请日：2014-02-26

申请人： Advanced Ion Beam Technology, Inc.

发明人： Jiong Chen

IPC分类号： G21K1/08 ,  H01J37/32 ,  G21K1/093 ,  G21K5/04 ,  H01J37/147 ,  H01J37/317 ,  H01J37/30

CPC分类号： H01J37/32669 ,  G21K1/093 ,  G21K5/04 ,  H01J37/1471 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/24542

摘要： A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

摘要翻译： 用于成形用于离子注入的离子束带的束控制组件包括第一杆，第二杆，电线的绕组的第一线圈，电线的第二绕组线圈，第一电源和第二电源。 第一线圈设置在第一杆上。 第一线圈是设置在第一条上的唯一线圈。 第二杆与第一杆相对地设置，在第一和第二杆之间限定间隙。 带状光束在间隙之间传播。 第二线圈设置在第二杆上。 第二线圈是设置在第二杆上的唯一线圈。 第一电源连接到第一线圈而不与任何其它线圈电连接。 第二电源连接到第二线圈而不与任何其它线圈电连接。

公开(公告)号：US20150031181A1

公开(公告)日：2015-01-29

申请号：US14195712

申请日：2014-03-03

申请人： ADVANCED ION BEAM TECHNOLOGY, INC.

发明人： Daniel TANG ,  Tzu-Shih YEN

IPC分类号： H01L29/66 ,  H01L29/51 ,  H01L29/165 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/78 ,  H01L21/306

CPC分类号： H01L29/66795 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/30604 ,  H01L21/31053 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66803 ,  H01L29/7848 ,  H01L29/785

摘要： A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.

摘要翻译： 形成具有在源极区和漏极区之间具有源极区，漏极区和沟道区的鳍的finFET。 翅片在半导体晶片上蚀刻。 形成具有与沟道区域直接接触的绝缘层和与绝缘层直接接触的导电栅极材料的栅极堆叠。 蚀刻源极和漏极区域，离开鳍片的沟道区域。 在与源极和漏极区相邻的沟道区的侧面上生长外延半导体，以形成源外延区和漏极外延区。 源极和漏极外延区域在生长外延半导体的同时原位掺杂。

公开(公告)号：US08890506B2

公开(公告)日：2014-11-18

申请号：US13227425

申请日：2011-09-07

申请人： Peter M. Kopalidis ,  Zhimin Wan

发明人： Peter M. Kopalidis ,  Zhimin Wan

IPC分类号： G01N27/00 ,  G01R19/00 ,  G01N27/62

CPC分类号： G01N27/62 ,  G01R19/0061

摘要： Techniques for measuring ion beam current, especially for measuring low energy ion beam current, are disclosed. The technique may be realized as an ion beam current measurement apparatus having at least a planar Faraday cup and a voltage assembly. The planar Faraday cup is located close to an inner surface of a chamber wall, and intersects an ion beam path. The voltage assembly is located outside a chamber having the chamber wall. Therefore, by properly adjusting the electric voltage applied on the planar Faraday cup by the voltage assembly, some undesired charged particles may be adequately suppressed. Further, the planar Faraday cup may surround an opening of a non-planar Faraday cup which may be any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of the planar Faraday cup on the ion beam path.

摘要翻译： 公开了用于测量离子束电流的技术，特别是用于测量低能量离子束电流的技术。 该技术可以被实现为具有至少一个平面法拉第杯和电压组件的离子束电流测量装置。 平面法拉第杯位于靠近室壁的内表面并与离子束路相交。 电压组件位于具有室壁的室外。 因此，通过适当地调整通过电压组件施加在平面法拉第杯上的电压，可以充分抑制一些不期望的带电粒子。 此外，平面法拉第杯可以围绕可以是任何常规法拉第杯的非平面法拉第杯的开口。 因此，可以通过离子束路径上的平面法拉第杯的较大的横截面面积良好地接收和测量整个离子束。

公开(公告)号：US08871584B2

公开(公告)日：2014-10-28

申请号：US13559499

申请日：2012-07-26

申请人： Daniel Tang ,  Tzu-Shih Yen

发明人： Daniel Tang ,  Tzu-Shih Yen

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/66803 ,  H01L21/02636 ,  H01L29/0673 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78684

摘要： A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched to expose a first region of the fin. A portion of the first region is then doped with a dopant.

摘要翻译： 形成具有在源极区和漏极区之间具有源极区，漏极区和沟道区的鳍的finFET。 翅片在半导体晶片上蚀刻。 形成具有与沟道区域直接接触的绝缘层和与绝缘层直接接触的导电栅极材料的栅极堆叠。 蚀刻源区和漏区以暴露鳍的第一区。 然后第一区域的一部分掺杂有掺杂剂。

公开(公告)号：US08698110B2

公开(公告)日：2014-04-15

申请号：US13101892

申请日：2011-05-05

申请人： Heng-Gung Chen ,  Shih-Chieh Jang

发明人： Heng-Gung Chen ,  Shih-Chieh Jang

IPC分类号： G21K5/00

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/24542

摘要： An ion implanting system includes an ion beam generator, a mass separation device, a holder device and a first detector. The ion beam generator is configured for generating a first ion beam. The mass separation device is configured for isolating a second ion beam comprising required ions from the first ion beam. The holder device is configured for holding a least one substrate. The holder device and the first detector reciprocate relative to the second ion beam along a first direction to make the substrate and the first detector pass across a projection region of the second ion beam, wherein the first detector is configured for obtaining relevant parameters of the second ion beam. The above-mentioned system is able to obtain the relevant parameters of the ion beam during ion implantation so that the system may immediately adjust the fabrication parameters to obtain better effect of ion implantation.

摘要翻译： 离子注入系统包括离子束发生器，质量分离装置，保持装置和第一检测器。 离子束发生器被配置用于产生第一离子束。 质量分离装置被配置用于从第一离子束隔离包含所需离子的第二离子束。 保持器装置构造成用于保持至少一个基板。 保持器装置和第一检测器沿着第一方向相对于第二离子束往复运动，以使得基板和第一检测器穿过第二离子束的突出区域，其中第一检测器被配置用于获得第二离子束的相关参数 离子束。 上述系统能够在离子注入期间获得离子束的相关参数，使得系统可以立即调整制造参数以获得更好的离子注入效果。

公开(公告)号：US08673753B1

公开(公告)日：2014-03-18

申请号：US13692815

申请日：2012-12-03

申请人： Advanced Ion Beam Technology, Inc.

发明人： Zhimin Wan

IPC分类号： H01L21/425

CPC分类号： H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/66803

摘要： In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.

摘要翻译： 在多能离子注入工艺中，使用具有离子源，提取组件和电极组件的离子注入系统将离子注入到靶中。 可以使用离子源和提取组件产生具有第一能量的离子束。 可以跨电极组件施加第一电压。 离子束可以以第一能量进入电极组件，以第二能量离开电极组件，并以第二能量将离子注入到靶中。 可以在电极组件上施加第二电压。 离子束可以以第一能量进入电极组件，以第三能量离开电极组件，并以第三能量将离子注入靶中。 第三能量可能与第二能量不同。

公开(公告)号：US08558197B2

公开(公告)日：2013-10-15

申请号：US12882432

申请日：2010-09-15

申请人： Heng-Gung Chen

发明人： Heng-Gung Chen

IPC分类号： G21G5/00

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/201 ,  H01J2237/20285 ,  H01J2237/24507

摘要： An ion implanting system includes an ion beam generator configured for generating a first ion beam; a mass separation device configured for isolating a second ion beam including required ions from the first ion beam; a holder device configured for holding a plurality of substrates, wherein the holder device and the second ion beam reciprocate relative to each other along a first direction in straight line or arc to make the plurality of substrates pass across a projection region of the second ion beam; and a first detector configured for obtaining relevant parameters of the second ion beam. The above ion beam implanting system may increase the ion beam utilization rate. The ion implanting system further comprises a second detector arranged on the holder device which could fully scan across the projection range of the second ion beam and obtaining the relevant parameters of the second ion beam.

摘要翻译： 离子注入系统包括被配置用于产生第一离子束的离子束发生器; 质量分离装置，被配置为将包含所需离子的第二离子束与第一离子束隔离; 保持装置，其构造成保持多个基板，其中所述保持器装置和所述第二离子束沿着第一方向相对于彼此沿直线或弧线往复运动，以使所述多个基板穿过所述第二离子束的投影区域 ; 以及第一检测器，被配置为获得所述第二离子束的相关参数。 上述离子束注入系统可以增加离子束的利用率。 离子注入系统还包括布置在保持器装置上的第二检测器，其可完全扫描第二离子束的投影范围并获得第二离子束的相关参数。