公开(公告)号：US07361228B2

公开(公告)日：2008-04-22

申请号：US11060525

申请日：2005-02-17

Applicant: Young-Bae Choi ,  Moon-Sook Lee ,  Byoung-Jae Bae

Inventor： Young-Bae Choi ,  Moon-Sook Lee ,  Byoung-Jae Bae

IPC: C23C16/455 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32522 ,  H01J37/3244

Abstract: Showerheads including a plate having a plurality of gas outlet holes extending therethrough and a head cover coupled to the plate to form a space between the plate and the head cover. A gas supply inlet member is configured to provide gas to the space directed toward the head cover. A gas distribution member on an inner face of the head cover facing the space is configured to partially suppress flow of the gas provided to the space in a direction along the gas distribution member to substantially uniformly distribute the gas in the space. The direction along the gas distribution member may be a horizontal direction and the gas provided to the space is directed in a substantially vertical upward direction. Apparatus and methods using the showerheads are also provided.

Abstract translation: 喷头包括具有延伸穿过其中的多个气体出口孔的板，以及联接到该板的头罩，以在板和头盖之间形成空间。 气体供给入口构件被配置为向指向头罩的空间提供气体。 在头盖的面向空间的内表面上的气体分配构件被构造成部分地抑制沿着气体分配构件的方向设置到空间的气体的流动，以将气体基本均匀地分布在空间中。 沿着气体分配构件的方向可以是水平方向，并且设置到空间的气体被引向基本垂直的向上的方向。 还提供了使用喷头的装置和方法。

公开(公告)号：US07312091B2

公开(公告)日：2007-12-25

申请号：US10898564

申请日：2004-07-26

Applicant: Moon-Sook Lee ,  Byoung-Jae Bae

Inventor： Moon-Sook Lee ,  Byoung-Jae Bae

IPC: H01L21/00

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/452 ,  C23C16/45514

Abstract: Metal organic chemical vapor deposition (MOCVD) may be utilized in methods of forming an (111) oriented PZT ferroelectric layer at a lower temperature, a ferroelectric capacitor and methods of fabricating, and a ferroelectric memory device using the same may be provided. Using the metal organic chemical vapor deposition, ferroelectric layers, capacitors, and memory devices, which may be fabricated and may have (111) preferred oriented crystal growth.

Abstract translation: 金属有机化学气相沉积（MOCVD）可以用于在较低温度下形成（111）取向的PZT铁电体层的方法，铁电电容器和制造方法，并且可以提供使用该方法的铁电存储器件。 使用金属有机化学气相沉积，铁电层，电容器和存储器件，其可以被制造并且可以具有（111）优选的取向晶体生长。

公开(公告)号：US20070029546A1

公开(公告)日：2007-02-08

申请号：US11279640

申请日：2006-04-13

Applicant: Byeong-Ok CHO ,  Moon-Sook LEE ,  Takahiro YASUE

Inventor： Byeong-Ok CHO ,  Moon-Sook LEE ,  Takahiro YASUE

IPC: H01L29/08

CPC classification number: H01L51/0001 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/04 ,  H01L27/283 ,  H01L51/0018 ,  H01L51/0591

Abstract: A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory element. Thus, the photoimageable switchable material is directly patterned by the actinic irradiation so that it is possible to fabricate the resistive memory cell through simple processes, and avoiding ashing and stripping steps.

Abstract translation: 电阻式存储单元采用可光成像的可切换材料，其可以通过光化辐射进行图案化，并且在可区分的电阻状态之间可逆地切换为存储元件。 因此，可光成像的可切换材料通过光化辐射直接图案化，使得可以通过简单的工艺制造电阻式存储单元，并避免灰化和剥离步骤。

公开(公告)号：US20060263289A1

公开(公告)日：2006-11-23

申请号：US11419986

申请日：2006-05-23

Applicant: Jang-Eun HEO ,  Moon-Sook LEE ,  Young-Moon CHOI ,  In-Gyu BAEK ,  Yoon-Ho SON ,  Suk-Hun CHOI ,  Kyung-Rae BYUN

Inventor： Jang-Eun HEO ,  Moon-Sook LEE ,  Young-Moon CHOI ,  In-Gyu BAEK ,  Yoon-Ho SON ,  Suk-Hun CHOI ,  Kyung-Rae BYUN

IPC: D01F9/12

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C13/0002 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1675

Abstract: Disclosed is a metal-metal oxide resistive memory device including a lower conductive layer pattern disposed in a substrate. An insulation layer is formed over the substrate, including a contact hole to partially expose the upper surface of the lower conductive layer pattern. The contact hole is filled with a carbon nanotube grown from the lower conductive layer pattern. An upper electrode and a transition-metal oxide layer made of a 2-components material are formed over the carbon nanotube and the insulation layer. The metal-metal oxide resistive memory device is adaptable to high integration and operable with relatively small power consumption by increasing the resistance therein.

公开(公告)号：US20060215445A1

公开(公告)日：2006-09-28

申请号：US11378945

申请日：2006-03-17

Applicant: In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

Inventor： In-Gyu Baek ,  Moon-Sook Lee ,  Dong-Chul Kim

IPC: G11C11/00

CPC classification number: H01L45/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

Abstract: A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

Abstract translation: 存储单元包括衬底中的插塞式第一电极，设置在第一电极上的磁阻存储元件，以及设置在与第一电极相对的磁阻存储元件上的第二电极。 第二电极具有与磁阻存储元件重叠的区域，其大于第一电极和磁阻存储元件的重叠区域。 例如，第一表面可以是基本上圆形的并且具有小于第二表面的最小平面尺寸（例如，宽度）的直径。 磁阻存储元件可以包括巨磁阻材料，例如具有钙钛矿相和/或过渡金属氧化物的绝缘材料。

公开(公告)号：US20060108625A1

公开(公告)日：2006-05-25

申请号：US11282136

申请日：2005-11-18

Applicant: Moon-Sook Lee ,  In-Gyu Baek

Inventor： Moon-Sook Lee ,  In-Gyu Baek

IPC: H01L27/108 ,  H01L21/8242 ,  G11C11/00

CPC classification number: G11C13/00 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

Abstract: A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to reduce a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed.

Abstract translation: 一种对包括过渡金属氧化物层的非易失性存储器件进行编程的方法包括将第一电脉冲施加到过渡金属氧化物层第一周期以减小过渡金属氧化物层的电阻并向第二电脉冲施加第二电脉冲 过渡金属氧化物层，延长第一周期，以增加过渡金属氧化物层的电阻。 还公开了相关设备。

公开(公告)号：US06987308B2

公开(公告)日：2006-01-17

申请号：US11009809

申请日：2004-12-10

Applicant: Moon-sook Lee ,  Kun-sang Park

Inventor： Moon-sook Lee ,  Kun-sang Park

IPC: H01L29/72

CPC classification number: H01L28/56 ,  H01L21/31683 ,  H01L27/10814 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/60

Abstract: A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.

Abstract translation: 形成铁电电容器的方法包括在基板上形成下电极。 下电极被氧化以形成金属氧化物膜。 在金属氧化物膜上形成铁电体膜，同时抑制金属氧化物膜的氧含量的降低。 在铁电体膜上形成上部电极。

公开(公告)号：US20050106761A1

公开(公告)日：2005-05-19

申请号：US11009809

申请日：2004-12-10

Applicant: Moon-sook Lee ,  Kun-sang Park

Inventor： Moon-sook Lee ,  Kun-sang Park

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/00 ,  H01L29/94 ,  H01L31/113 ,  H01L21/8242 ,  H01L29/76 ,  H01L31/119 ,  H01L31/062

CPC classification number: H01L28/56 ,  H01L21/31683 ,  H01L27/10814 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/60

Abstract: A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.

Abstract translation: 形成铁电电容器的方法包括在基板上形成下电极。 下电极被氧化以形成金属氧化物膜。 在金属氧化物膜上形成铁电体膜，同时抑制金属氧化物膜的氧含量的降低。 在铁电体膜上形成上部电极。

公开(公告)号：US20050011444A1

公开(公告)日：2005-01-20

申请号：US10855851

申请日：2004-05-27

Applicant: Moon-sook Lee ,  Byoung-jae Bae

Inventor： Moon-sook Lee ,  Byoung-jae Bae

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/4402 ,  C23C16/4408 ,  C23C16/45574

Abstract: A vapor deposition system can include a first portion of the vapor deposition system that is configured to be purged using a first material and a second portion that is configured to be purged using a second material. Related methods are also disclosed.

Abstract translation: 气相沉积系统可以包括蒸气沉积系统的第一部分，其被配置为使用第一材料进行清洗，第二部分被配置为使用第二材料进行吹扫。 还公开了相关方法。

公开(公告)号：US06576941B1

公开(公告)日：2003-06-10

申请号：US10079160

申请日：2002-02-20

Applicant: Moon-Sook Lee ,  Kun-Sang Park

Inventor： Moon-Sook Lee ,  Kun-Sang Park

IPC: H01L31119

CPC classification number: H01L27/11502 ,  H01L21/76895 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

Abstract: Ferroelectric capacitors, etc. are disclosed that include a conductive plug that has a base portion of a first cross-sectional width and a protruding portion that protrudes from the base portion and has a second cross-sectional width that is less than the first cross-sectional width. A conductive layer of the ferroelectric capacitor is on the protruding portion opposite the base portion. Related methods are also disclosed.

Abstract translation: 公开了铁电电容器等，其包括具有第一横截面宽度的基部的导电插塞和从基部突出的具有比第一横截面宽度小的第二横截面宽度的突出部分， 截面宽度。 铁电电容器的导电层位于与基部相对的突出部分上。 还公开了相关方法。