公开(公告)号：US12011269B2

公开(公告)日：2024-06-18

申请号：US16819688

申请日：2020-03-16

Applicant: STMicroelectronics S.r.l.

Inventor： Francesco Rundo ,  Sabrina Conoci

IPC: G06F7/00 ,  A61B5/00 ,  A61B5/18 ,  A61B5/316 ,  B60W40/08

CPC classification number: A61B5/18 ,  A61B5/316 ,  A61B5/725 ,  A61B5/7264 ,  A61B5/746 ,  B60W40/08 ,  A61B2560/0228 ,  B60W2040/0872

Abstract: In an embodiment, a method of processing an electrophysiological signal includes collecting the electrophysiological signal that is indicative of a level of attention of a human; filtering the electrophysiological signal via joint low-pass and high-pass filtering using a set of filtering parameters including low-pass filters parameters and high-pass filters parameters having a set of low-pass cut-off frequencies and a set of high-pass cut-off frequencies respectively. The method further includes applying artificial neural network processing to the filtered electrophysiological signal to extract therefrom a set of features of the electrophysiological signal. The method further includes applying classifier processing to the set of features extracted from the filtered electrophysiological signal and producing a classification signal indicative of the level of attention of the human. The method further includes generating a trigger signal to trigger a user circuit based on the classification signal.

公开(公告)号：US20240183719A1

公开(公告)日：2024-06-06

申请号：US18061918

申请日：2022-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Enrico Rosario ALESSI ,  Fabio PASSANITI ,  Antonella LICCIARDELLO ,  Daniele BALDACCHINO

IPC: G01J5/0806 ,  G01J5/05 ,  G01J5/068

CPC classification number: G01J5/0806 ,  G01J5/05 ,  G01J5/068

Abstract: A sensor device includes a passive infrared sensor, a control circuit, and a lens that directs infrared radiation onto the passive infrared sensor. The lens includes an obstruction that asymmetrically blocks transmission of infrared radiation through the lens. The control circuit is configured to determine the direction of crossing of individuals passing in front of the sensor device based on sensor signals from the passive infrared sensor.

公开(公告)号：US12003247B2

公开(公告)日：2024-06-04

申请号：US17846520

申请日：2022-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： Francesco Stilgenbauer

IPC: H03M1/06 ,  H03M3/00

CPC classification number: H03M1/0668 ,  H03M1/0626 ,  H03M1/0648 ,  H03M3/492 ,  H03M3/51

Abstract: A signal processing circuit includes a filter generating a quantizer input signal from a noise shaping input signal and a quantizer output signal. A quantizer divides the quantizer input signal by a scaling factor to produce a noise shaping output signal and multiplies the noise shaping output signal by the scaling factor to produce the quantizer output signal. Receiver circuitry scales the quantizer output signal by a second scaling factor. A dynamic range optimization circuit compares a current value of the noise shaping input signal to a threshold value, lowers or raises the scaling factor in response to the comparison, and proportionally lowers or raises the scaling factor such that a ratio between the scaling factor and second scaling factor remains substantially constant.

公开(公告)号：US20240178301A1

公开(公告)日：2024-05-30

申请号：US18530050

申请日：2023-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ferdinando IUCOLANO ,  Alfonso PATTI ,  Alessandro CHINI

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/2003

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

公开(公告)号：US11990442B2

公开(公告)日：2024-05-21

申请号：US17537112

申请日：2021-11-29

Applicant: STMicroelectronics S.r.l.

Inventor： Cristina Somma ,  Aurora Sanna ,  Damian Halicki

IPC: H01L23/00 ,  H01L23/498

CPC classification number: H01L24/16 ,  H01L23/49838 ,  H01L24/17 ,  H01L2224/16225 ,  H01L2224/1713 ,  H01L2924/30101

Abstract: A semiconductor die is mounted at a die area of a ball grid array package that includes an array of electrically-conductive ball. A power channel conveys a power supply current to the semiconductor die. The power channel is formed by an electrically-conductive connection plane layers extending in a longitudinal direction between a distal end at a periphery of the package and a proximal end at the die area. A distribution of said electrically-conductive balls is made along the longitudinal direction. The electrically-conductive connection plane layer includes subsequent portions in the longitudinal direction between adjacent electrically-conductive balls of the distribution. Respective electrical resistance values of the subsequent portions monotonously decrease from the distal end to the proximal end. A uniform distribution of power supply current over the length of the power channel is thus facilitated.

公开(公告)号：US11989065B2

公开(公告)日：2024-05-21

申请号：US17578336

申请日：2022-01-18

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Fabio Passaniti ,  Enrico Rosario Alessi

IPC: H01T23/00 ,  G06F1/16

CPC classification number: G06F1/1677 ,  G06F1/1616 ,  G06F1/1652

Abstract: The present disclosure is directed to devices and methods for performing screen state detection. The screen state detection may be used in conjunction with any device with a bendable display. The device and method utilizes an electrostatic charge variation sensor to detect whether the display is in an open state or a closed state.

公开(公告)号：US20240162371A1

公开(公告)日：2024-05-16

申请号：US18504034

申请日：2023-11-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Giuseppe D'ARRIGO ,  Antonella SCIUTO ,  Domenico Pierpaolo MELLO ,  Pietro Paolo BARBARINO ,  Salvatore COFFA

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/34

CPC classification number: H01L33/025 ,  H01L33/0054 ,  H01L33/20 ,  H01L33/34

Abstract: A light-emitter device comprising: a body of solid-state material; and a P-N junction in the body, including: a cathode region, having N-type conductivity; an anode region, having P-type conductivity, extending in direct contact with the cathode region and defining a light-emitting surface; and a depletion region around an interface between the anode and the cathode regions. The light-emitting surface has at least one indentation that extends towards the depletion region. The depletion region has a peak defectiveness area, housing irregularities in crystal lattice, in correspondence of said at least one indentation. The defectiveness area, which includes point defects, line defects, bulk defects, etc., is generated as a direct consequence of the formation of the indentation by an indenter or nanoindenter system. In the defectiveness area color centers are generated.

公开(公告)号：US20240162175A1

公开(公告)日：2024-05-16

申请号：US18054806

申请日：2022-11-11

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Lucrezia GUARINO ,  Francesca MILANESI ,  Claudio ZAFFERONI

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/0225 ,  H01L2224/0233 ,  H01L2224/03001 ,  H01L2224/0401 ,  H01L2224/04042

Abstract: The present disclosure is directed to embodiments of a conductive structure on a conductive barrier layer that separates the conductive structure from a conductive layer on which the conductive barrier layer is present. A gap or crevice extends along respective surfaces of the conductive structure and along respective surfaces of one or more insulating layers. The gap or crevice separates the respective surfaces of the one or more insulating layers from the respective surfaces of the conductive structure. The gap or crevice provides clearance in which the conductive structure may expand into when exposed to changes in temperature. For example, when coupling a wire bond to the conductive structure, the conductive structure may increase in temperature and expand into the gap or crevice. However, even in the expanded state, respective surfaces of the conductive structure do not physically contact the respective surfaces of the one or more insulating layers.

公开(公告)号：US11982928B2

公开(公告)日：2024-05-14

申请号：US17979363

申请日：2022-11-02

Applicant: STMicroelectronics LTD ,  STMicroelectronics S.r.l.

Inventor： Alex Domnits ,  Elan Roth ,  Davide Terzi ,  Luca Molinari ,  Marco Boschi

IPC: G03B21/14 ,  G01J1/02 ,  G01J1/44 ,  G03B21/00 ,  G03B21/20

CPC classification number: G03B21/142 ,  G01J1/0238 ,  G01J1/44 ,  G03B21/008 ,  G03B21/2033

Abstract: A scanning laser projector includes an optical module with a housing defined by a top surface, a bottom surface, and sidewalls extending between the top surface and bottom surface to define an interior compartment within the housing. A given one of the sidewalls has an exit window defined therein. A first light detector is positioned at an interior surface of the given one of the sidewalls about a periphery of the exit window. A second light detector positioned at the interior surface of the given one of the sidewalls about the periphery of the exit window and on a different side thereof than the first light detector.

公开(公告)号：US20240153553A1

公开(公告)日：2024-05-09

申请号：US18406097

申请日：2024-01-06

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics S.r.l.

Inventor： Antonino Conte ,  Alin Razafindraibe ,  Francesco Tomaiuolo ,  Thibault Mortier

IPC: G11C13/00

CPC classification number: G11C13/0028 ,  G11C13/0004 ,  G11C13/003 ,  G11C2213/79

Abstract: In an embodiment, a non-volatile memory device is proposed. The device includes a plurality of local pull-up stages distributed along a group of memory portions in a memory array. Each local pull-up stage includes, for each wordline that extends through the group of memory portions, a corresponding local pull-up transistor of an NMOS type. The local pull-up transistors of each local pull-up are configured to locally decouple the corresponding wordline from a node at a first reference potential in response to a wordline that extends through the group of memory portions being selected, and locally couple the corresponding wordline to the node at the first reference potential in response to all the wordlines that extend through the group of memory portions being deselected to restore locally a deselection voltage on a wordline previously selected.