公开(公告)号：US5723384A

公开(公告)日：1998-03-03

申请号：US713944

申请日：1996-09-13

Applicant: Byung-lyul Park ,  Jung-min Ha ,  Dae-hong Ko ,  Sang-in Lee

Inventor： Byung-lyul Park ,  Jung-min Ha ,  Dae-hong Ko ,  Sang-in Lee

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L27/10852 ,  H01L27/10817 ,  H01L28/91

Abstract: There is provided a method for manufacturing a capacitor in a semiconductor device including the steps of forming first and second insulating layers with a first contact hole through to a semiconductor substrate, patterning a first conductive layer to form a pedestal portion of a lower electrode, using a patterned third insulating layer selectively forming an upper portion of the lower electrode from a tungsten nitride thin film, and forming an undercut beneath the pedestal portion by wet-etching the second insulating layer.

Abstract translation: 提供了一种用于制造半导体器件中的电容器的方法，包括以下步骤：将具有第一接触孔的第一绝缘层和第二绝缘层形成至半导体衬底，使第一导电层图案化以形成下电极的基座部分，使用 图案化的第三绝缘层，从氮化钨薄膜选择性地形成下部电极的上部，并通过湿式蚀刻第二绝缘层，在底座部分下方形成底切。

公开(公告)号：US5572072A

公开(公告)日：1996-11-05

申请号：US341982

申请日：1994-11-16

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: H01L21/285 ,  H01L21/441 ,  H01L21/48 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L29/43 ,  H01L29/41

CPC classification number: H01L21/76838 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

Abstract: The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole is formed in the insulating layer. On the insulating layer, a first metal is deposited via a CVD method to form a CVD metal layer or a CVD metal plug filling up the contact hole. Then, the thus-obtained CVD metal layer or the CVD metal plus is heat-treated in a vacuum at a high temperature below the melting point of the first metal, thereby planarizing the surface of the CVD metal layer. A second metal is deposited via a sputtering method on the CVD metal layer or on the CVD metal plug to thereby form a sputtered metal layer. The contact hole is filled up with the first metal by the CVD method and then a reliable sputtered metal layer is deposited via a sputtering method. The wiring layer can be used for semiconductor devices of the next generation.

公开(公告)号：US5266521A

公开(公告)日：1993-11-30

申请号：US828458

申请日：1992-01-31

Applicant: Sang-in Lee ,  Chang-soo Park ,  Jeong-ha Son

Inventor： Sang-in Lee ,  Chang-soo Park ,  Jeong-ha Son

IPC: H01L21/20 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/532 ,  H01L21/441

CPC classification number: H01L21/76882 ,  H01L21/32115 ,  H01L21/7684 ,  H01L23/53214 ,  H01L21/76804 ,  H01L2924/0002 ,  Y10S438/913

Abstract: A method for manufacturing a semiconductor device, comprising the steps of forming an insulating interlayer on a semiconductor substrate to provide a semiconductor intermediate product, providing the insulating interlayer with an opening, forming a first metal layer on the semiconductor intermediate product, heat-treating the first metal layer to fill up the opening with the metal, forming a second metal layer on the first metal layer, and then heat-treating the second layer to planarize the metal layer. An alternative embodiment of the invention encompasses a method for manufacturing a semiconductor device, comprising the steps of providing a semiconductor wafer with an opening formed thereon, forming a metal layer on the semiconductor wafer, and then heat-treating the metal layer to fill up the opening with the metal, wherein pure Al or an aluminum alloy having no Si component is used as the metal in forming the metal layer.

Abstract translation: 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成绝缘中间层以提供半导体中间产物，为绝缘中间层提供开口，在半导体中间产物上形成第一金属层，热处理 第一金属层用金属填充开口，在第一金属层上形成第二金属层，然后热处理第二层以使金属层平坦化。 本发明的替代实施例包括一种用于制造半导体器件的方法，包括以下步骤：提供半导体晶片，其上形成有开口，在半导体晶片上形成金属层，然后热处理金属层以填充 与金属一起开口，其中在形成金属层时使用纯Al或不含Si成分的铝合金作为金属。

公开(公告)号：US20180290171A1

公开(公告)日：2018-10-11

申请号：US15942205

申请日：2018-03-30

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: B05D1/02 ,  B05D3/14 ,  B05B7/16

Abstract: Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

公开(公告)号：US09163310B2

公开(公告)日：2015-10-20

申请号：US13397590

申请日：2012-02-15

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H05H1/24 ,  C23C16/455 ,  B05D1/36 ,  B05D1/38 ,  B05D1/00

CPC classification number: C23C16/45534 ,  B05D1/36 ,  B05D1/38 ,  B05D1/60 ,  B05D1/62 ,  C23C16/345 ,  C23C16/45517 ,  C23C16/45553 ,  C23C16/513

Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.

Abstract translation: 实施例涉及在不同的沉积过程阶段使用自由基。 可以通过在远离衬底的电抗器中的电极上施加电压来产生自由基。 在分子层沉积（MLD），原子层沉积（ALD）和化学气相沉积（CVD）的不同阶段将基团注入到衬底上，以改善沉积层的特性，从而能够沉积不可行的材料和/或 增加沉积速率。 用于产生自由基的气体可包括惰性气体和其它气体。 基团可以分解前体，活化沉积层的表面或引起沉积的分子之间的交联。

公开(公告)号：USD725184S1

公开(公告)日：2015-03-24

申请号：US29461724

申请日：2013-07-26

Applicant: Jong-Kyu Kim ,  Sang-In Lee ,  Seung-Wook Jeong ,  Naoto Fukasawa

Designer： Jong-Kyu Kim ,  Sang-In Lee ,  Seung-Wook Jeong ,  Naoto Fukasawa

公开(公告)号：US08877300B2

公开(公告)日：2014-11-04

申请号：US13369717

申请日：2012-02-09

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/30 ,  C23C16/40

CPC classification number: C23C16/513 ,  C23C16/308 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45551

Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

Abstract translation: 使用氮化合物的混合物的自由基进行原子层沉积（ALD），以增加沉积在基底上的层的沉积速率。 将氮化合物气体的混合物注入自由基反应器中。 通过在自由基反应器中的两个电极上施加电压以产生氮化合物气体的自由基来产生复合气体的等离子体。 将基团注入预先注入源前体的基底的表面上。 该基团用作反应物前体并在衬底上沉积一层材料。

公开(公告)号：US20120302071A1

公开(公告)日：2012-11-29

申请号：US13572555

申请日：2012-08-10

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/31

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US20120301632A1

公开(公告)日：2012-11-29

申请号：US13563611

申请日：2012-07-31

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

公开(公告)号：US08257799B2

公开(公告)日：2012-09-04

申请号：US12709763

申请日：2010-02-22

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H05H1/24 ,  C23C16/00

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。