公开(公告)号：US09741802B2

公开(公告)日：2017-08-22

申请号：US14979915

申请日：2015-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/66 ,  H01L29/40 ,  G06F17/50 ,  H01L29/778 ,  H01L29/872 ,  H01L29/20

CPC classification number: H01L29/408 ,  G06F17/5068 ,  G06F17/5072 ,  G06F2217/02 ,  G06F2217/78 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/7786 ,  H01L29/872

Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film or a low conductive film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film or the low conductive film. The conducting elements can vary in at least one of composition, doping, conductivity, size, thickness, shape, and distance from the device channel along a lateral length of the insulating film or the low conductive film, or in a direction that is perpendicular to the lateral length.

公开(公告)号：US20170229610A1

公开(公告)日：2017-08-10

申请号：US15495169

申请日：2017-04-24

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/15 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/207 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/145 ,  H01L33/32 ,  H01L33/325 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/34333

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

公开(公告)号：US09724441B2

公开(公告)日：2017-08-08

申请号：US14541245

申请日：2014-11-14

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: F24F3/16 ,  A61L2/10 ,  A23L3/28 ,  F25D17/04

CPC classification number: A61L2/10 ,  A23L3/28 ,  A61L2202/14 ,  A61L2202/21 ,  F25D17/042 ,  F25D2317/0417

Abstract: Ultraviolet radiation is directed within an area at target wavelengths, target intensities, a target temporal distribution, and/or a target spatial distribution. The target attribute(s) of the ultraviolet radiation can correspond to at least one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, an ethylene decomposition operating configuration, and/or the like.

公开(公告)号：US09707307B2

公开(公告)日：2017-07-18

申请号：US14937090

申请日：2015-11-10

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: A23B4/015 ,  A61L2/10 ,  A23L3/00 ,  A23L3/28 ,  A61L2/24

CPC classification number: A23L3/28 ,  A23L3/003 ,  A61L2/10 ,  A61L2/24 ,  A61L2202/14

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.

公开(公告)号：US20170197002A1

公开(公告)日：2017-07-13

申请号：US15469683

申请日：2017-03-27

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10 ,  G01N21/47 ,  G01N21/64

CPC classification number: A61L2/10 ,  A61B5/0071 ,  A61F13/0246 ,  A61L2202/14 ,  A61N5/0624 ,  A61N2005/0645 ,  A61N2005/0651 ,  A61N2005/0654 ,  A61N2005/0661 ,  A61N2005/0666 ,  G01N21/4738 ,  G01N21/6486 ,  G01N2201/0221 ,  G01N2201/062 ,  G01N2201/0621

Abstract: A device including a flexible substrate and an ultraviolet radiation system is disclosed. The ultraviolet radiation system can include at least one ultraviolet radiation source configured to emit ultraviolet radiation towards a surface to be disinfected, an ultraviolet transparent component configured to focus the ultraviolet radiation, and a control system configured to control the at least one ultraviolet radiation source. The device can include a hand article, such as a glove.

公开(公告)号：US20170189711A1

公开(公告)日：2017-07-06

申请号：US15388296

申请日：2016-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Alexander Dobrinsky

IPC: A61N5/06

Abstract: Medical devices capable of delivering and/or sensing electromagnetic radiation within an organism body are described. Placement of a location for delivering and/or sending the electromagnetic radiation is done through the skin of the organism body. Devices described include a needle with a wave guiding structure configured to direct the electromagnetic radiation to/from a location within the organism body.

公开(公告)号：US20170157276A1

公开(公告)日：2017-06-08

申请号：US15436945

申请日：2017-02-20

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska ,  Timothy James Bettles

IPC: A61L2/10 ,  A61L9/20 ,  A41D13/002 ,  G01J1/42 ,  G09B5/06 ,  G09B19/24 ,  A61L2/24 ,  G01N21/64

CPC classification number: A61L2/10 ,  A41D13/002 ,  A61L2/24 ,  A61L9/00 ,  A61L9/20 ,  A61L2202/14 ,  A61L2209/111 ,  A61L2209/14 ,  G01J1/429 ,  G01N21/6456 ,  G01N21/6486 ,  G01N2201/0221 ,  G09B5/06 ,  G09B19/24

Abstract: A system capable of detecting and/or sterilizing surface(s) of an object using ultraviolet radiation is provided. The system can include a disinfection chamber and/or handheld ultraviolet unit, which includes ultraviolet sources for inducing fluorescence in a contaminant and/or sterilizing a surface of an object. The object can comprise a protective suit, which is worn by a user and also can include ultraviolet sources for disinfecting air prior to the air entering the protective suit. The system can be implemented as a multi-tiered system for protecting the user and others from exposure to the contaminant and sterilizing the protective suit after exposure to an environment including the contaminant.

公开(公告)号：US09673285B2

公开(公告)日：2017-06-06

申请号：US14576303

申请日：2014-12-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/205 ,  G06F17/50 ,  H01L29/40 ,  H01L29/10 ,  H01L29/20

CPC classification number: H01L29/205 ,  G06F17/5068 ,  H01L29/1075 ,  H01L29/1079 ,  H01L29/2003 ,  H01L29/408 ,  H01L29/7786

Abstract: A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted for removal by the low-conducting layer or a maximum interfering frequency targeted for suppression using the low-conducting layer. For example, a product of the lateral resistance and a capacitance between the low-conducting layer and the channel can be configured to be larger than an inverse of the minimum target operating frequency and the product can be smaller than at least one of: the charge-discharge time or an inverse of the maximum interfering frequency.

公开(公告)号：US09660043B2

公开(公告)日：2017-05-23

申请号：US14636546

申请日：2015-03-03

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/45 ,  H01L29/20 ,  H01L21/285 ,  H01L29/417 ,  H01L33/38 ,  H01L29/778

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/7787 ,  H01L33/382 ,  H01L2933/0016

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

公开(公告)号：US20170117437A1

公开(公告)日：2017-04-27

申请号：US15331895

申请日：2016-10-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/64 ,  H01L33/62 ,  H01L33/32 ,  H01L33/40

Abstract: An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.