公开(公告)号：US08282734B2

公开(公告)日：2012-10-09

申请号：US12255638

申请日：2008-10-21

申请人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： C23C16/455 ,  C23C16/30 ,  C23C16/34 ,  C23C16/32 ,  B05C11/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/0254 ,  C23C16/26 ,  C23C16/4404

摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

摘要翻译： 提供了具有用于半导体应用的保护涂层的制品及其制造方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

公开(公告)号：US20120208373A1

公开(公告)日：2012-08-16

申请号：US13455984

申请日：2012-04-25

申请人： DEENESH PADHI ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： DEENESH PADHI ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US08197636B2

公开(公告)日：2012-06-12

申请号：US12106881

申请日：2008-04-21

申请人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/6719 ,  H01J37/32366 ,  H01J2237/3321 ,  H01L21/67201 ,  H01L21/67207

摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

公开(公告)号：US20110300715A1

公开(公告)日：2011-12-08

申请号：US13050807

申请日：2011-03-17

申请人： Tirunelveli S. Ravi ,  Ananda H. Kumar ,  Ashish Asthana ,  Visweswaren Sivaramakrishnan

发明人： Tirunelveli S. Ravi ,  Ananda H. Kumar ,  Ashish Asthana ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/306 ,  C25F7/00 ,  C25F3/02

CPC分类号： H01L31/1876 ,  H01L21/68728 ,  H01L31/048 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels.

摘要翻译： 公开了一种制造光伏（PV）电池板的方法，其中所有PV电池同时形成在固定在基座上的单晶硅母晶片的二维阵列上。 在母晶片的表面上阳极氧化多孔硅分离层。 然后使多孔膜平滑以形成用于外延膜生长的合适表面。 使用外延反应器来生长形成PV电池结构的n型和p型膜。 与n层和p层的接触被沉积，然后将玻璃层粘合到PV电池阵列上。 然后通过剥离运动将多孔硅膜分离穿过所有附着在上面的细胞，随后在PV电池阵列上附着一层强化层。 母晶片的阵列可以重复使用多次，从而减少完成的太阳能电池板的材料成本。

公开(公告)号：US20090314309A1

公开(公告)日：2009-12-24

申请号：US12142402

申请日：2008-06-19

申请人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： B08B5/00 ,  C23C16/56 ,  C23C16/513

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

摘要翻译： 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。

公开(公告)号：US20080153311A1

公开(公告)日：2008-06-26

申请号：US12042829

申请日：2008-03-05

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20060272774A1

公开(公告)日：2006-12-07

申请号：US11145258

申请日：2005-06-03

申请人： Kazutoshi Maehara ,  Visweswaren Sivaramakrishnan ,  Kentaro Wada ,  Mark Fodor ,  Andrzei Kaszuba

发明人： Kazutoshi Maehara ,  Visweswaren Sivaramakrishnan ,  Kentaro Wada ,  Mark Fodor ,  Andrzei Kaszuba

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/4586 ,  H01L21/68757

摘要： A substrate support comprises a ceramic disc with an electrode that is chargeable through an electrode terminal. An electrical connector connects an external power source to the electrode terminal. The electrical connector has a pair of opposing pincer arms, a groove sized to fit around the electrode terminal, and a pair of through holes to receive a tightening assembly capable of tightening the opposing pincer arms about the electrode terminal.

摘要翻译： 衬底支撑件包括具有可通过电极端子充电的电极的陶瓷盘。 电连接器将外部电源连接到电极端子。 电连接器具有一对相对的钳形臂，尺寸适于围绕电极端子的凹槽和一对通孔，用于接收能够围绕电极端子紧固相对的夹持臂的紧固组件。

公开(公告)号：US07094313B2

公开(公告)日：2006-08-22

申请号：US10829520

申请日：2004-04-21

申请人： Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Mario David Silvetti ,  Talex Sajoto

发明人： Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Mario David Silvetti ,  Talex Sajoto

IPC分类号： C23F1/02 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/5096 ,  H01J37/32183

摘要： A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.

摘要翻译： 衬底处理系统设置有处理室，交流电压源和阻抗匹配网络。 处理室在处理期间保持基板，并且交流电压供应与处理室连接以将能量电容耦合到处理室内形成的等离子体。 阻抗匹配网络与交流电源耦合，并具有可变电阻元件和可变无功元件，其状态分别定义阻抗的不同实部和虚部。

公开(公告)号：US07055809B2

公开(公告)日：2006-06-06

申请号：US10817396

申请日：2004-04-02

申请人： Visweswaren Sivaramakrishnan ,  John M. White

发明人： Visweswaren Sivaramakrishnan ,  John M. White

IPC分类号： B01F3/04

CPC分类号： C23C16/4481 ,  B01F3/022 ,  Y10S261/65

摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.

公开(公告)号：US20050287771A1

公开(公告)日：2005-12-29

申请号：US11065464

申请日：2005-02-24

申请人： Martin Seamons ,  Wendy Yeh ,  Sudha Rathi ,  Deenesh Padhi ,  Andy Luan ,  Sum-Yee Tang ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Hichem M'Saad ,  Yuxiang Wang ,  Michael Kwan

发明人： Martin Seamons ,  Wendy Yeh ,  Sudha Rathi ,  Deenesh Padhi ,  Andy Luan ,  Sum-Yee Tang ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Hichem M'Saad ,  Yuxiang Wang ,  Michael Kwan

IPC分类号： C23C16/505 ,  H01L21/314 ,  H01L21/768 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36

CPC分类号： C23C16/505 ,  H01L21/3146 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829

摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

摘要翻译： 提供用于沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括将衬底定位在处理室中，将处理气体引入处理室，其中处理气体包括载气，氢气和一种或多种前体化合物，产生 处理气体的等离子体，通过从双频RF源施加电力，以及在基板上沉积无定形碳层。