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    Carbon nanotube-based neural networks and methods of making and using same
    71.
    发明授权
    Carbon nanotube-based neural networks and methods of making and using same 有权
    基于碳纳米管的神经网络及其制造和使用方法

    公开(公告)号：US08659940B2

    公开(公告)日：2014-02-25

    申请号：US12934545

    申请日：2009-03-25

    申请人： Claude L. Bertin ,  Brent M. Segal ,  Darren K. Brock

    发明人： Claude L. Bertin ,  Brent M. Segal ,  Darren K. Brock

    IPC分类号： G11C11/54

    CPC分类号： G06N3/063

    摘要： Physical neural networks based nanotechnology include dendrite circuits that comprise non-volatile nanotube switches. A first terminal of the non-volatile nanotube switches is able to receive an electrical signal and a second terminal of the non-volatile nanotube switches is coupled to a common node that sums any electrical signals at the first terminals of the nanotube switches. The neural networks further includes transfer circuits to propagate the electrical signal, synapse circuits, and axon circuits.

    摘要翻译： 基于物理神经网络的纳米技术包括包含非挥发性纳米管开关的枝晶电路。 非挥发性纳米管开关的第一端子能够接收电信号，并且非易失性纳米管开关的第二端子耦合到公共节点，该公共节点与纳米管开关的第一端子处的任何电信号相加。 神经网络还包括传输电路以传播电信号，突触电路和轴突电路。

    RESISTIVE ELEMENTS USING CARBON NANOTUBES
    74.
    发明申请
    RESISTIVE ELEMENTS USING CARBON NANOTUBES 有权
    使用碳纳米管的电阻元件

    公开(公告)号：US20080231413A1

    公开(公告)日：2008-09-25

    申请号：US12111442

    申请日：2008-04-29

    申请人： Claude L. Bertin ,  Thomas Ruckes ,  Brent M. Segal ,  Jonathan W. Ward

    发明人： Claude L. Bertin ,  Thomas Ruckes ,  Brent M. Segal ,  Jonathan W. Ward

    IPC分类号： H01C10/00

    CPC分类号： H01C7/06 ,  H01C7/003 ,  H01C7/005 ,  H01C7/006 ,  H01C10/306 ,  H01C17/0652 ,  H01C17/232 ,  H01C17/283 ,  H01L28/22

    摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

    摘要翻译： 电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。 元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。 体积电阻是可调谐的。

    Nonvolatile resistive memories having scalable two-terminal nanotube switches
    75.
    发明授权
    Nonvolatile resistive memories having scalable two-terminal nanotube switches 有权
    具有可扩展的两端纳米管开关的非易失性电阻存储器

    公开(公告)号：US08102018B2

    公开(公告)日：2012-01-24

    申请号：US11835612

    申请日：2007-08-08

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

    IPC分类号： G11C11/56 ,  G11C5/00 ,  H01L29/00

    CPC分类号： B82Y10/00 ,  G11C11/56 ,  G11C13/003 ,  G11C13/025 ,  G11C19/00 ,  G11C29/86 ,  G11C2213/19 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206

    摘要： A non-volatile resistive memory is provided. The memory includes at least one non-volatile memory cell and selection circuitry. Each memory cell has a two-terminal nanotube switching device having and a nanotube fabric article disposed between and in electrical communication with two conductive terminals. Selection circuitry is operable to select the two-terminal nanotube switching device for read and write operations. Write control circuitry, responsive to a control signal, supplies write signals to a selected memory cell to induce a change in the resistance of the nanotube fabric article, the resistance corresponding to an informational state of the memory cell. Resistance sensing circuitry in communication with a selected nonvolatile memory cell, senses the resistance of the nanotube fabric article and provides the control signal to the write control circuitry. Read circuitry reads the corresponding informational state of the memory cell.

    摘要翻译： 提供了非易失性电阻性存储器。 存储器包括至少一个非易失性存储单元和选择电路。 每个存储单元具有两端纳米管切换装置，其具有设置在两个导电端子之间并与两个导电端子电连通的纳米管织物制品。 选择电路可操作以选择用于读和写操作的两端纳米管切换装置。 响应于控制信号的写控制电路向所选存储单元提供写入信号，以引起纳米管织物物品的电阻变化，该电阻对应于存储单元的信息状态。 与所选择的非易失性存储器单元通信的电阻感测电路感测纳米管织物制品的电阻并将控制信号提供给写入控制电路。 读取电路读取存储单元的相应信息状态。

    Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
    77.
    发明授权
    Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
    非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法

    公开(公告)号：US07782650B2

    公开(公告)日：2010-08-24

    申请号：US11835845

    申请日：2007-08-08

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

    IPC分类号： G11C11/00

    CPC分类号： H01L27/1021 ,  G11C2213/19 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  Y10S977/943

    摘要： Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell.

    摘要翻译： 在一个方面，存储器阵列包括字线; 位线 记忆细胞; 和存储器操作电路。 每个存储器单元响应于字线和位线上的电刺激，并且包括：具有第一和第二端子的二端非易失性纳米管开关器件，半导体二极管元件和能够具有多个电阻状态的纳米管织物制品 。 半导体二极管和纳米管制品分别与第一和第二端子电连接，并且与第一和第二端子电连接，它们分别耦合到字线位线。 操作电路通过激活位和/或字线来选择单元，检测所选择的存储单元的纳米管织物的电阻状态，并调整施加到单元的电刺激以可控制地引起纳米管织物制品中选定的电阻状态。 选择的电阻状态对应于存储单元的信息状态。

    ISOLATED METAL PLUG PROCESS FOR USE IN FABRICATING CARBON NANOTUBE MEMORY CELLS
    78.
    发明申请
    ISOLATED METAL PLUG PROCESS FOR USE IN FABRICATING CARBON NANOTUBE MEMORY CELLS 失效
    用于制备碳纳米管存储器细胞的隔离金属压片方法

    公开(公告)号：US20100148277A1

    公开(公告)日：2010-06-17

    申请号：US12710477

    申请日：2010-02-23

    申请人： Richard J. Carter ,  Peter A. Burke ,  Verne C. Hornback ,  Thomas Rueckes ,  Claude L. Bertin

    发明人： Richard J. Carter ,  Peter A. Burke ,  Verne C. Hornback ,  Thomas Rueckes ,  Claude L. Bertin

    IPC分类号： H01L27/112

    CPC分类号： H01H1/0094 ,  Y10S977/724 ,  Y10S977/732 ,  Y10S977/943

    摘要： The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a lower chamber above the electrical contact. A nanotube crossbar element is arranged to span the lower chamber. A second support layer is formed with an opening that defines a top chamber above the lower chamber, the top chamber including an extension region that extends beyond an edge of the lower chamber to expose a portion of the top surface of the first support layer. A roof layer covers the top of the top chamber and includes an aperture that exposes a portion of the extension region of the top chamber and includes a plug that extends into the aperture in the roof layer to seal the top and bottom chambers. The memory cell further includes an electrode that overlies the crossbar element such that electrical signals can activate the electrode to attract or repel the crossbar element to set a memory state for the transistor.

    摘要翻译： 本发明涉及制造具有纳米管横杆元件的机电存储器单元的结构和方法。 这种存储单元包括具有与晶体管电接触的接触的晶体管的衬底。 第一支撑层形成在衬底上，其开口限定了电触点上方的下腔室。 纳米管横杆元件布置成跨越下室。 第二支撑层形成有开口，所述开口限定在所述下腔室上方的顶部腔室，所述顶部腔室包括延伸超出所述下部腔室的边缘以暴露所述第一支撑层的顶部表面的一部分的延伸区域。 屋顶层覆盖顶部室的顶部，并且包括露出顶部室的延伸区域的一部分并且包括延伸到顶部层中的孔中以密封顶部和底部室的插塞的孔。 存储单元还包括覆盖在横杆元件上的电极，使得电信号可以激活电极以吸引或排斥交叉开关元件以设置晶体管的存储状态。

    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
    79.
    发明授权
    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
    非易失性机电场效应器件和使用其的电路及其形成方法

    公开(公告)号：US07595527B2

    公开(公告)日：2009-09-29

    申请号：US11860929

    申请日：2007-09-25

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  John E. Berg

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  John E. Berg

    IPC分类号： H01L27/105 ,  H01L29/788

    CPC分类号： B82Y10/00 ,  G11C8/10 ,  G11C11/412 ,  G11C11/54 ,  G11C13/025 ,  G11C16/0416 ,  G11C23/00 ,  H01L27/115 ,  Y10S977/733

    摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal.

    摘要翻译： 非易失性场效应器件和使用它的电路。 非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。 源极，漏极和栅极中的每一个都具有相应的端子。 电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。 源极，漏极和栅极中的其他物体直接连接到其相应的端子。 纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。

    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
    80.
    发明授权
    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
    非易失性机电场效应器件和使用其的电路及其形成方法

    公开(公告)号：US07274064B2

    公开(公告)日：2007-09-25

    申请号：US10967858

    申请日：2004-10-18

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  John E. Berg

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  John E. Berg

    IPC分类号： H01L29/788

    CPC分类号： B82Y10/00 ,  G11C8/10 ,  G11C11/412 ,  G11C11/54 ,  G11C13/025 ,  G11C16/0416 ,  G11C23/00 ,  H01L27/115 ,  Y10S977/733

    摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile closed state.

    摘要翻译： 非易失性场效应器件和使用它的电路。 非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。 源极，漏极和栅极中的每一个都具有相应的端子。 电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。 源极，漏极和栅极中的其他物体直接连接到其相应的端子。 纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。 在一个实施例中，当创建非易失性打开状态时，两个控制端中的一个具有用于与纳米管开关元件接触的电介质表面。 在一个实施例中，源极，漏极和栅极可以在从地面到电源电压的任何电压电平下被激励，并且其中两个控制端子被激励在从接地到比电源电压更大幅度的开关阈值电压的任何电压电平。 在一个实施例中，纳米管开关元件包括由纳米制成的制品，其位于两个控制端子之间。 在一个实施例中，两个控制端子中的一个是用于静电拉伸纳米管制品的释放电极，与源极，漏极和栅极之一不接触，以形成非易失性的打开状态。 在一个实施例中，两个控制端子中的另一个是用于静电拉动纳米管制品与源极，漏极和栅极之一接触的设置电极，以便形成非易失性闭合状态。