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    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
    1.
    发明授权
    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
    非易失性机电场效应器件和使用其的电路及其形成方法

    公开(公告)号：US07595527B2

    公开(公告)日：2009-09-29

    申请号：US11860929

    申请日：2007-09-25

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  John E. Berg

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  John E. Berg

    IPC分类号： H01L27/105 ,  H01L29/788

    CPC分类号： B82Y10/00 ,  G11C8/10 ,  G11C11/412 ,  G11C11/54 ,  G11C13/025 ,  G11C16/0416 ,  G11C23/00 ,  H01L27/115 ,  Y10S977/733

    摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal.

    摘要翻译： 非易失性场效应器件和使用它的电路。 非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。 源极，漏极和栅极中的每一个都具有相应的端子。 电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。 源极，漏极和栅极中的其他物体直接连接到其相应的端子。 纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。

    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
    2.
    发明授权
    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
    非易失性机电场效应器件和使用其的电路及其形成方法

    公开(公告)号：US07274064B2

    公开(公告)日：2007-09-25

    申请号：US10967858

    申请日：2004-10-18

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  John E. Berg

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  John E. Berg

    IPC分类号： H01L29/788

    CPC分类号： B82Y10/00 ,  G11C8/10 ,  G11C11/412 ,  G11C11/54 ,  G11C13/025 ,  G11C16/0416 ,  G11C23/00 ,  H01L27/115 ,  Y10S977/733

    摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile closed state.

    摘要翻译： 非易失性场效应器件和使用它的电路。 非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。 源极，漏极和栅极中的每一个都具有相应的端子。 电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。 源极，漏极和栅极中的其他物体直接连接到其相应的端子。 纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。 在一个实施例中，当创建非易失性打开状态时，两个控制端中的一个具有用于与纳米管开关元件接触的电介质表面。 在一个实施例中，源极，漏极和栅极可以在从地面到电源电压的任何电压电平下被激励，并且其中两个控制端子被激励在从接地到比电源电压更大幅度的开关阈值电压的任何电压电平。 在一个实施例中，纳米管开关元件包括由纳米制成的制品，其位于两个控制端子之间。 在一个实施例中，两个控制端子中的一个是用于静电拉伸纳米管制品的释放电极，与源极，漏极和栅极之一不接触，以形成非易失性的打开状态。 在一个实施例中，两个控制端子中的另一个是用于静电拉动纳米管制品与源极，漏极和栅极之一接触的设置电极，以便形成非易失性闭合状态。

    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
    3.
    发明授权
    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
    非易失性机电场效应器件和使用其的电路及其形成方法

    公开(公告)号：US07943464B2

    公开(公告)日：2011-05-17

    申请号：US12554647

    申请日：2009-09-04

    申请人： John E. Berg ,  Claude L. Bertin ,  Thomas Rueckes

    发明人： John E. Berg ,  Claude L. Bertin ,  Thomas Rueckes

    IPC分类号： H01L21/336

    CPC分类号： B82Y10/00 ,  G11C8/10 ,  G11C11/412 ,  G11C11/54 ,  G11C13/025 ,  G11C16/0416 ,  G11C23/00 ,  H01L27/115 ,  Y10S977/733

    摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal.

    摘要翻译： 非易失性场效应器件和使用它的电路。 非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。 源极，漏极和栅极中的每一个都具有相应的端子。 电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。 源极，漏极和栅极中的其他物体直接连接到其相应的端子。 纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。

    NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
    4.
    发明授权
    NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same 有权
    具有纳米管块的NRAM阵列，纳米管迹线和纳米管平面及其制造方法

    公开(公告)号：US08587989B2

    公开(公告)日：2013-11-19

    申请号：US12486602

    申请日：2009-06-17

    申请人： H. Montgomery Manning ,  Thomas Rueckes ,  Claude L. Bertin ,  Jonathan W. Ward ,  Garo Derderian

    发明人： H. Montgomery Manning ,  Thomas Rueckes ,  Claude L. Bertin ,  Jonathan W. Ward ,  Garo Derderian

    IPC分类号： G11C13/00

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1675

    摘要： NRAM arrays with nanotube blocks, traces and planes, and methods of making the same are disclosed. In some embodiments, a nanotube memory array includes a nanotube fabric layer disposed in electrical communication with first and second conductor layers. A memory operation circuit including a circuit for generating and applying a select signal on first and second conductor layers to induce a change in the resistance of the nanotube fabric layer between the first and second conductor layers is provided. At least two adjacent memory cells are formed in at least two selected cross sections of the nanotube fabric and conductor layers such that each memory cell is uniquely addressable and programmable. For each cell, a change in resistance corresponds to a change in an informational state of the memory cell. Some embodiments include bit lines, word lines, and reference lines. In some embodiments, 6F2 memory cell density is achieved.

    摘要翻译： 公开了具有纳米管块，轨迹和平面的NRAM阵列及其制造方法。 在一些实施例中，纳米管存储器阵列包括布置成与第一和第二导体层电连通的纳米管织物层。 一种存储器操作电路，包括用于在第一和第二导体层上产生和施加选择信号以引起第一和第二导体层之间的纳米管织物层的电阻变化的电路。 至少两个相邻的存储单元形成在纳米管织物和导体层的至少两个选定的横截面中，使得每个存储单元是唯一可寻址和可编程的。 对于每个单元，电阻变化对应于存储单元的信息状态的变化。 一些实施例包括位线，字线和参考线。 在一些实施例中，实现6F2存储单元密度。

    Sensor platform using a horizontally oriented nanotube element
    6.
    发明授权
    Sensor platform using a horizontally oriented nanotube element 有权
    传感器平台采用水平取向的纳米管元件

    公开(公告)号：US08310015B2

    公开(公告)日：2012-11-13

    申请号：US11333426

    申请日：2006-01-17

    申请人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： H01L29/82

    CPC分类号： G01N27/4146 ,  B82Y15/00 ,  G11C13/025 ,  Y10S977/902 ,  Y10S977/904 ,  Y10S977/92 ,  Y10S977/921 ,  Y10S977/922 ,  Y10S977/924 ,  Y10T29/43 ,  Y10T29/49082

    摘要： Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes, and, under certain embodiments, it comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing a collection of nanotubes on the structure; defining a pattern within the nanotube collection; removing part of the collection so that a patterned collection remains to form a sensor element; and providing circuitry to electrically sense the sensor's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under certain embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array includes multiple sensors.

    摘要翻译： 描述了传感器平台及其制造方法，并且包括具有包括纳米管或其他纳米结构（例如纳米线）的水平定向的传感器元件的平台。 在某些实施方案中，传感器元件对分析物具有亲和力。 在某些实施方案中，这种传感器元件包括一个或多个原始纳米管，并且在某些实施方案中，其包含衍生化或官能化的纳米管。 在某些实施例中，通过提供支撑结构来制造传感器; 在结构上提供纳米管的集合; 定义纳米管集合内的图案; 去除部分集合，使得图案化的集合保持形成传感器元件; 以及提供用于电感测传感器电特性的电路。 在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。 在某些实施方案中，传感器材料在提供在结构上或在图案化之后被衍生化或官能化。 在某些实施例中，大规模阵列包括多个传感器。

    Compact electrical switching devices with nanotube elements, and methods of making same
    7.
    发明授权
    Compact electrical switching devices with nanotube elements, and methods of making same 有权
    具有纳米管元件的紧凑型电气开关器件及其制造方法

    公开(公告)号：US08222704B2

    公开(公告)日：2012-07-17

    申请号：US12651288

    申请日：2009-12-31

    申请人： H. Montgomery Manning ,  Thomas Rueckes ,  Claude L. Bertin

    发明人： H. Montgomery Manning ,  Thomas Rueckes ,  Claude L. Bertin

    IPC分类号： H01L29/12 ,  H01L29/41 ,  H01L29/43 ,  H01L27/11

    CPC分类号： B82Y10/00 ,  G11C13/025 ,  H01L27/24 ,  H01L29/0665 ,  H01L29/43 ,  H01L51/0048 ,  Y10S977/742 ,  Y10S977/936

    摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.

    摘要翻译： 电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。 设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。 纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。 这种电气装置的阵列可以形成为非易失性存储装置。 还公开了制造这种装置的方法。

    Resistive elements using carbon nanotubes
    8.
    发明授权
    Resistive elements using carbon nanotubes 有权
    使用碳纳米管的电阻元件

    公开(公告)号：US07859385B2

    公开(公告)日：2010-12-28

    申请号：US12111442

    申请日：2008-04-29

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Jonathan W. Ward

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Jonathan W. Ward

    IPC分类号： H01C10/00

    CPC分类号： H01C7/06 ,  H01C7/003 ,  H01C7/005 ,  H01C7/006 ,  H01C10/306 ,  H01C17/0652 ,  H01C17/232 ,  H01C17/283 ,  H01L28/22

    摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

    摘要翻译： 电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。 元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。 体积电阻是可调谐的。

    Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
    9.
    发明授权
    Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks 有权
    存储元件和交叉点开关以及使用非易失性纳米管块的阵列

    公开(公告)号：US07835170B2

    公开(公告)日：2010-11-16

    申请号：US11835613

    申请日：2007-08-08

    申请人： Claude L. Bertin ,  X. M. Henry Huang ,  Thomas Rueckes ,  Ramesh Sivarajan

    发明人： Claude L. Bertin ,  X. M. Henry Huang ,  Thomas Rueckes ,  Ramesh Sivarajan

    IPC分类号： G11C11/00

    CPC分类号： G11C5/063 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/0021 ,  G11C13/025 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/19 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/10 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/112 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0591 ,  Y10S977/943

    摘要： Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.

    摘要翻译： 在一个方面，覆盖的纳米管开关包括：（a）包括不对齐的多个纳米管的纳米管元件，所述纳米管元件具有顶表面，底表面和侧表面; （b）与纳米管元件接触的第一和第二端子，其中第一端子设置在并基本上覆盖纳米管元件的整个顶表面，并且其中第二端子接触纳米管的底表面的至少一部分 元件; 和（c）能够向第一和第二端子施加电刺激的控制电路。 纳米管元件可以响应于由控制电路施加到第一和第二端子的对应的多个电刺激而在多个电子状态之间切换。 对于每个不同的电子状态，纳米管元件提供在第一和第二端子之间具有不同电阻的电路径。

    Sensor platform using a non-horizontally oriented nanotube element
    10.
    发明授权
    Sensor platform using a non-horizontally oriented nanotube element 有权
    传感器平台使用非水平取向的纳米管元件

    公开(公告)号：US07786540B2

    公开(公告)日：2010-08-31

    申请号：US11827393

    申请日：2007-07-11

    申请人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： H01L23/00

    CPC分类号： G01N27/4146 ,  B82Y15/00 ,  G11C13/025 ,  Y10S977/902 ,  Y10S977/904 ,  Y10S977/92 ,  Y10S977/921 ,  Y10S977/922 ,  Y10S977/924 ,  Y10T29/43 ,  Y10T29/49082

    摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.

    摘要翻译： 介绍传感器平台及其制作方法。 描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。 在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。 在某些实施例中，这种传感器元件包括一个或多个原始纳米管。 在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。 在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。 在某些实施方案中，传感器元件包括预衍生化或预官能化的纳米管。 在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。 在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。