公开(公告)号：US08648350B2

公开(公告)日：2014-02-11

申请号：US13398925

申请日：2012-02-17

申请人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

IPC分类号： H01L29/15

CPC分类号： H01L33/325 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/14 ,  H01L33/18

摘要： Provided is a gallium nitride-based compound semiconductor light-emitting element, in which the concentration of Mg which is a p-type dopant in a p-GaN layer in which the (10-10) m-plane of a hexagonal wurtzite structure grows is adjusted in a range from 1.0×1018 cm−3 to 9.0×1018 cm−3.

摘要翻译： 提供了一种氮化镓系化合物半导体发光元件，其中在六边形纤锌矿结构的（10-10）m面生长的p-GaN层中作为p型掺杂剂的Mg的浓度增长 在1.0×10 18 cm -3〜9.0×10 18 cm -3的范围内进行调整。

公开(公告)号：US08587022B2

公开(公告)日：2013-11-19

申请号：US13256061

申请日：2010-12-27

申请人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.

摘要翻译： 氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1， 设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。

公开(公告)号：US08357607B2

公开(公告)日：2013-01-22

申请号：US12936960

申请日：2010-03-09

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Ryou Kato

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L21/3205

CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构20上的电极30.电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型半导体区域的表面接触。

公开(公告)号：US08309984B2

公开(公告)日：2012-11-13

申请号：US13167865

申请日：2011-06-24

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Ryou Kato

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构20上的电极30.电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型半导体区域的表面接触。

公开(公告)号：US08268706B2

公开(公告)日：2012-09-18

申请号：US13061544

申请日：2009-07-29

申请人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

IPC分类号： H01L21/203

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/32

摘要： A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S13); and cooling the p-type gallium nitride-based compound semiconductor layer (Step S14) after the step of growing has been carried out. The step of growing includes supplying hydrogen gas to a reaction chamber in which the p-type gallium nitride-based compound semiconductor layer is grown. The step of cooling includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off.

摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：通过在加热的气氛中进行金属有机化学气相沉积工艺来生长p型氮化镓基化合物半导体层，使得晶体生长面 半导体层为m面（步骤S13）。 并且在生长步骤之后冷却p型氮化镓基化合物半导体层（步骤S14）。 生长步骤包括向生长p型氮化镓系化合物半导体层的反应室供给氢气。 冷却步骤包括：将氢气供给到反应室切断时，冷却p型氮化镓系化合物半导体层。

公开(公告)号：US20120211725A1

公开(公告)日：2012-08-23

申请号：US13503972

申请日：2011-03-15

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L33/06 ,  H01L21/20 ,  H01L29/15

CPC分类号： H01L21/02579 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L23/53247 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/13 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341 ,  H01L2924/00

摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面以不小于1°的角度倾斜1° 超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。

公开(公告)号：US08163573B2

公开(公告)日：2012-04-24

申请号：US13294537

申请日：2011-11-11

申请人： Shunji Yoshida ,  Ryou Kato ,  Toshiya Yokogawa

发明人： Shunji Yoshida ,  Ryou Kato ,  Toshiya Yokogawa

IPC分类号： H01L21/205 ,  H01L21/66 ,  C30B25/00 ,  H01L33/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3202 ,  H01S2304/04

摘要： InyGa1-yN (0

摘要翻译： 其主表面为非极性平面或半极性平面的InyGa1-yN（0

公开(公告)号：US08110851B2

公开(公告)日：2012-02-07

申请号：US13191026

申请日：2011-07-26

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L33/00 ,  H01L33/06

CPC分类号： H01L33/32 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构体20上的电极30.电极30包括与半导体多层结构体20中的p型半导体区域的表面接触的Mg层32。

公开(公告)号：US20120002134A1

公开(公告)日：2012-01-05

申请号：US13256529

申请日：2009-07-09

申请人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

发明人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

IPC分类号： G02F1/1335 ,  H01L33/02

CPC分类号： H01L25/0753 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure 45 formed from an AlxInyGazN (x+y+z=1, x≧0, y≧0, z≧0) semiconductor, and the nitride-based semiconductor multilayer structure 20 includes an active layer region 24 having an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region 24; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths λ1 and λ2, respectively, and thicknesses of the semiconductor chips 45 of the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as d1 and d2, respectively, the following relations are satisfied: λ1

摘要翻译： 根据本发明的照明装置至少包括第一氮化物基半导体发光元件和第二氮化物基半导体发光元件，其中：第一氮化物基半导体发光元件和第二氮化物半导体发光元件 半导体发光元件各自包括半导体芯片; 半导体芯片包括由Al x In y Ga z N（x + y + z = 1，x≥0，y≥0，z≥0）形成的氮化物基半导体多层结构45，氮化物类半导体多层结构20包括 具有m面作为界面的有源层区域24; 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件均从有源层区域24发射偏振光; 并且当从第一氮化物基半导体发光元件发射的偏振光和从第二氮化物基半导体发光元件发出的偏振光分别具有波长λ1和λ2时，半导体芯片45的厚度 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件分别赋予d1和d2，满足以下关系：λ1<λ2和d1

公开(公告)号：US08030677B2

公开(公告)日：2011-10-04

申请号：US12375118

申请日：2007-07-13

申请人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2304/04

摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。