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135 条记录 (耗时 0.033 秒)

    Relaxed InGaN/AlGaN Templates
    72.
    发明申请
    Relaxed InGaN/AlGaN Templates 有权
    轻松的InGaN / AlGaN模板

    公开(公告)号：US20110281424A1

    公开(公告)日：2011-11-17

    申请号：US13193530

    申请日：2011-07-28

    申请人： Christopher L. Chua ,  Zhihong Yang ,  Andre Strittmatter ,  Mark R. Teepe

    发明人： Christopher L. Chua ,  Zhihong Yang ,  Andre Strittmatter ,  Mark R. Teepe

    IPC分类号： H01L21/20 ,  C30B25/10 ,  C30B25/02

    CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/3203 ,  H01S5/32341

    摘要： A relaxed InGaN template is formed by growing a GaN or InGaN nucleation layer at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures on the nucleation layer. Although not necessary, the buffer layer is typically undoped, and is usually grown at high pressures to encourage planarization and to improve surface smoothness. A subsequent n-doped cap layer can then be grown at low pressures to form the n-contact of a photonic or electronic device. In some cases, a wetting layer—typically low temperature AlN—is grown prior to the nucleation layer. Other templates, such as AlGaN on Si or SiC, are also produced using the method of the present invention.

    摘要翻译： 通过在常规基底层（例如，蓝宝石）上在低温下生长GaN或InGaN成核层来形成松弛的InGaN模板。 成核层通常非常粗糙和多晶。 然后在成核层上的常温下生长单晶InGaN缓冲层。 虽然不是必需的，缓冲层通常是未掺杂的，并且通常在高压下生长以促进平坦化并改善表面平滑度。 然后可以在低压下生长随后的n掺杂的盖层，以形成光子或电子器件的n接触。 在一些情况下，在成核层之前生长润湿层（通常是低温AlN）。 也可以使用本发明的方法制造其它模板，例如Si或SiC上的AlGaN。

    Semiconductor Laser with Integrated Contact and Waveguide
    73.
    发明申请
    Semiconductor Laser with Integrated Contact and Waveguide 有权
    具有集成接触和波导的半导体激光器

    公开(公告)号：US20110069730A1

    公开(公告)日：2011-03-24

    申请号：US12564302

    申请日：2009-09-22

    申请人： André Strittmatter ,  Christopher L. Chua ,  Noble M. Johnson

    发明人： André Strittmatter ,  Christopher L. Chua ,  Noble M. Johnson

    IPC分类号： H01S5/026 ,  H01S5/02

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/2202 ,  H01S2301/18

    摘要： A semiconductor light-emitting device has, in place of a traditional separate cladding layer and contact structure, a non-epitaxial contact and waveguide layer. The non-epitaxial contact and waveguide layer is formed of a conductive material and such that it has a recess therein and over the injection region. Air filling the region together with appropriate choice of material for the non-epitaxial contact and waveguide layer creates desired lateral waveguiding. Metallic silver in one choice for this material. The recess may also be filled with a low-loss material having a refractive index higher than that of the material forming the non-epitaxial contact and waveguide layer. Transparent conductive oxides (e.g., indium tin oxide (ITO), zinc oxide (ZnO), etc.), appropriate metal (e.g., gold), or a composite comprising a conductive oxide and a metal, provide low absorption in the UV and near-IR wavelengths of interest, and are thus good candidate materials for within the recess.

    摘要翻译： 一种半导体发光器件代替传统的独立包层和接触结构，具有非外延接触和波导层。 非外延接触和波导层由导电材料形成，并且其在其中和在注入区域上具有凹部。 填充该区域的空气与用于非外延接触和波导层的材料的适当选择产生所需的横向波导。 金属银在这种材料的一个选择。 该凹部也可以填充折射率高于形成非外延接触和波导层的材料的折射率的低损耗材料。 透明导电氧化物（例如，氧化铟锡（ITO），氧化锌（ZnO）等），合适的金属（例如金）或包含导电氧化物和金属的复合材料在UV和附近提供低吸收 -IR波长，因此是凹陷内的良好候选材料。

    Selective Decomposition Of Nitride Semiconductors To Enhance LED Light Extraction
    74.
    发明申请
    Selective Decomposition Of Nitride Semiconductors To Enhance LED Light Extraction 有权
    氮化物半导体的选择性分解以增强LED光提取

    公开(公告)号：US20110039360A1

    公开(公告)日：2011-02-17

    申请号：US12909548

    申请日：2010-10-21

    申请人： David P. Bour ,  Clifford F. Knollenberg ,  Christopher L. Chua

    发明人： David P. Bour ,  Clifford F. Knollenberg ,  Christopher L. Chua

    IPC分类号： H01L33/58

    CPC分类号： H01L21/268 ,  H01L33/007 ,  H01L33/12 ,  H01L33/22

    摘要： A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.

    摘要翻译： 描述了在LED的模板层内或紧邻LED的模板层内纹理化表面的方法。 该方法使用引导通过基底的纹理激光来分解和凹陷待纹理表面的半导体材料。 通过纹理化表面，减少了模板层内的光捕获。 此外，通过图案化凹坑的布置，可以布置每个凹坑的金属涂层以将电流扩散通过模板层，从而穿过LED的n掺杂区域。

    Sensor surface with 3D curvature formed by electronics on a continuous 2D flexible substrate
    75.
    发明授权
    Sensor surface with 3D curvature formed by electronics on a continuous 2D flexible substrate 有权
    传感器表面具有由连续2D柔性基板上的电子元件形成的3D曲率

    公开(公告)号：US07733397B2

    公开(公告)日：2010-06-08

    申请号：US11644056

    申请日：2006-12-22

    申请人： Jeng Ping Lu ,  Christopher L. Chua

    发明人： Jeng Ping Lu ,  Christopher L. Chua

    IPC分类号： H04N3/14

    CPC分类号： H01L27/14601 ,  G06K9/209 ,  H04N5/335 ,  H04N5/3696

    摘要： A method of making a curved sensor is described. The method involves projecting portions of a curved three dimensional structure such as a hemisphere onto a two dimensional substrate in an outline pattern. The outline pattern typically serves as a perimeter of a sensor. After forming a sensor in the shape of the outline pattern, the two dimensional substrate is flexed to form a three dimensional sensor structure.

    摘要翻译： 描述制作弯曲传感器的方法。 该方法涉及将轮廓图案中的诸如半球的弯曲三维结构的部分投影到二维基板上。 轮廓图案通常用作传感器的周边。 在形成轮廓图案形状的传感器之后，使二维基板弯曲形成三维传感器结构。

    LIGHT-EMITTING DEVICES WITH MODULATION DOPED ACTIVE LAYERS
    77.
    发明申请
    LIGHT-EMITTING DEVICES WITH MODULATION DOPED ACTIVE LAYERS 审中-公开
    具有调制活性层的发光装置

    公开(公告)号：US20090283746A1

    公开(公告)日：2009-11-19

    申请号：US12121431

    申请日：2008-05-15

    申请人： Christopher L. Chua ,  Zhihong Yang

    发明人： Christopher L. Chua ,  Zhihong Yang

    IPC分类号： H01L29/06 ,  H01S5/00 ,  H01L21/20

    CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L33/025 ,  H01L33/06 ,  H01L33/325 ,  H01S5/305 ,  H01S5/309

    摘要： A semiconductor light emitting device has an n-type layer, a p-type layer, and a light-emitting active layer arranged between the p-type layer and the n-type layer, the active layer having alternating regions of doped and undoped materials. A double heterojunction light emitting device has a bulk active layer having doped portions alternating with undoped portions. A method of manufacturing a light emitting device includes forming a first layer arranged on a substrate, growing an active layer, selectively adding impurities at predetermined times during the growing of the active layer, and forming a second layer arranged on the active layer.

    摘要翻译： 半导体发光器件具有n型层，p型层和布置在p型层和n型层之间的发光有源层，有源层具有掺杂和未掺杂材料的交替区域 。 双异质结发光器件具有具有与未掺杂部分交替的掺杂部分的体有源层。 一种制造发光器件的方法包括形成布置在衬底上的第一层，生长活性层，在活性层生长期间在预定时间选择性地添加杂质，以及形成布置在有源层上的第二层。

    PARTICLE DISPLAY WITH JET-PRINTED COLOR FILTERS AND SURFACE COATINGS
    78.
    发明申请
    PARTICLE DISPLAY WITH JET-PRINTED COLOR FILTERS AND SURFACE COATINGS 有权
    喷墨打印彩色滤色片和表面涂层的颗粒显示

    公开(公告)号：US20090154516A1

    公开(公告)日：2009-06-18

    申请号：US11957799

    申请日：2007-12-17

    申请人： Christopher L. Chua ,  Zhihong Yang

    发明人： Christopher L. Chua ,  Zhihong Yang

    IPC分类号： H01S5/125 ,  H01L33/00

    CPC分类号： H01S5/18308 ,  H01L33/007 ,  H01L33/145 ,  H01S5/0213 ,  H01S5/0424 ,  H01S5/32341 ,  H01S5/423 ,  H01S2304/04

    摘要： A method of forming a buried aperture in a nitride light emitting device is described. The method involves forming an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also includes nitride. The aperture layer is etched to create an aperture which is then filled with a conducting material by epitaxial regrowth. The amorphous layer is crystallized forming an electrically resistive material during or before regrowth. The conducting aperture in the electrically resistive material is well suited for directing current into a light emitting region of the active layer.

    摘要翻译： 描述了在氮化物发光器件中形成掩埋孔的方法。 该方法包括在包括氮化物材料的有源层上形成通孔，通常为非晶或多晶材料。 孔层材料通常还包括氮化物。 蚀刻孔径层以产生孔，然后通过外延再生长填充导电材料。 在再生长期间或之前，非晶层结晶形成电阻材料。 电阻材料中的导电孔径非常适合于将电流引导到有源层的发光区域中。

    Photonic device with integrated hybrid microlens array
    79.
    发明授权
    Photonic device with integrated hybrid microlens array 有权
    具有集成混合微透镜阵列的光子器件

    公开(公告)号：US07324717B2

    公开(公告)日：2008-01-29

    申请号：US11286123

    申请日：2005-11-22

    申请人： Christopher L. Chua ,  Michel A. Rosa ,  Patrick Y. Maeda ,  Eric Peeters

    发明人： Christopher L. Chua ,  Michel A. Rosa ,  Patrick Y. Maeda ,  Eric Peeters

    IPC分类号： G02B6/12 ,  G02B6/32

    CPC分类号： H01L31/02327 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/16151 ,  H01S5/02296 ,  H01S5/18388 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A microlens structure is mounted directly onto the upper surface of a packaged VCSEL device and positioned to locate microlenses directly over corresponding VCSEL elements. The microlens structure includes a block-like pedestal having a lower surface that faces the upper surface of the VSCEL device. The microlenses are formed in a central region of the lower surface, and several legs (stand-offs) extend from peripheral edges of the lower surface. During assembly, the VCSEL device is positioned under the microlens structure such that each microlens is aligned over its corresponding VCSEL element, and then raised until the legs contact the upper surface of the VCSEL device. The legs serve to self-align the microlenses to the VCSEL device, and are sized to maintain an optimal distance between the microlenses and the VCSEL elements. The pedestal is attached to a carrier plate that is secured to an IC package housing the VCSEL device.

    摘要翻译： 微透镜结构直接安装在封装的VCSEL器件的上表面上并定位成将微透镜直接定位在相应的VCSEL元件上。 微透镜结构包括具有面向VSCEL器件的上表面的下表面的块状基座。 微透镜形成在下表面的中心区域中，并且几个腿（支座）从下表面的周边边缘延伸。 在组装期间，VCSEL器件位于微透镜结构下方，使得每个微透镜在其相应的VCSEL元件上对准，然后升高直到腿接触VCSEL器件的上表面。 腿用于将微透镜自对准到VCSEL器件，并且其尺寸被设计成保持微透镜和VCSEL元件之间的最佳距离。 基座固定在承载VCSEL装置的IC封装的承载板上。