公开(公告)号：US5981977A

公开(公告)日：1999-11-09

申请号：US110834

申请日：1998-07-06

申请人： Chisato Furukawa ,  Hideto Sugawara ,  Masayuki Ishikawa ,  Nobuhiro Suzuki

发明人： Chisato Furukawa ,  Hideto Sugawara ,  Masayuki Ishikawa ,  Nobuhiro Suzuki

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/44 ,  H01S5/00 ,  H01S5/227 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341

摘要： A nitride compound semiconductor light emitting element comprises a substrate, a nitride compound semiconductor n-type layer, a mask layer having a predetermined opening, a nitride compound semiconductor buffer layer epitaxially grown on said n-type layer exclusively at said opening. The buffer layer has a recess on its top face so that a thickness of said buffer layer is thinner above a central portion of the opening and thicker above edge portions of the opening. A nitride compound semiconductor active layer is selectively formed on the recess of the buffer layer to be thicker at the central portion of the recess and thinner at the edges of the recess. A nitride compound semiconductor burying layer overlays the mask layer and the active layer to cover the active layer. By selectively growing the buffer layer and the active layer in the opening of the mask layer formed on the substrate and by growing additional layers to bury the entire structure and to flatten the surface, a planar-type, stripe-buried structure is realized. The active layer has a distribution of refractive index due to the distribution of thickness resulting from the selective growth and can confine light with high efficiency. Additionally, by using an insulation film, highly efficient confinement of current is realized to provide a light emitting element for a shorter wavelength with a high luminous intensity and a low oscillation threshold value.

摘要翻译： 氮化物半导体发光元件包括衬底，氮化物化合物半导体n型层，具有预定开口的掩模层，仅在所述开口处在所述n型层上外延生长的氮化物化合物半导体缓冲层。 缓冲层在其顶面上具有凹部，使得所述缓冲层的厚度在开口的中心部分上方更薄，并且在开口的边缘部分较厚。 在缓冲层的凹部上选择性地形成氮化物化合物半导体活性层，使其在凹部的中央部较厚，在凹部的边缘处变薄。 氮化物化合物半导体掩埋层覆盖掩模层和有源层以覆盖有源层。 通过在衬底上形成的掩模层的开口中选择性地生长缓冲层和活性层，并且通过生长附加层以埋入整个结构并使表面变平，实现了平面型条纹埋层结构。 活性层由于选择性生长导致的厚度分布而具有折射率分布，并且可以高效地限制光。 此外，通过使用绝缘膜，实现电流的高效限制，以提供具有高发光强度和低振荡阈值的较短波长的发光元件。

公开(公告)号：US4910743A

公开(公告)日：1990-03-20

申请号：US283796

申请日：1988-12-13

申请人： Yasuo Ohba ,  Masayuki Ishikawa ,  Motoyuki Yamamoto ,  Yukio Watanabe ,  Hideto Sugawara

发明人： Yasuo Ohba ,  Masayuki Ishikawa ,  Motoyuki Yamamoto ,  Yukio Watanabe ,  Hideto Sugawara

IPC分类号： H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/323

CPC分类号： H01S5/2231 ,  H01S5/0421 ,  H01S5/3054 ,  H01S5/32325 ,  Y10S148/095

摘要： There is disclosed a semiconductor layer which can emit a continuous laser beam in a visible wavelength range. The laser has an n-GaAs substrate. On this substrate, an n-InGaAlP cladding layer, an active layer, and p-InGaAlP cladding layers are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer is provided, defining a laser beam-guiding channel. A thin p-InGaAlP contact layer and a mesa-shaped, p-GaAs contact layer are formed on the top surface of the upper cladding layer. Two n-type semiconductive, current-blocking layers cover the slanted sides of the upper, mesa-shaped cladding layer and also the contact layer. They are made of the same n-GaAs compound semiconductor material as the substrate.

公开(公告)号：US4835117A

公开(公告)日：1989-05-30

申请号：US247268

申请日：1988-09-21

申请人： Yasuo Ohba ,  Masayuki Ishikawa ,  Motoyuki Yamamoto ,  Yukio Watanabe ,  Hideto Sugawara

发明人： Yasuo Ohba ,  Masayuki Ishikawa ,  Motoyuki Yamamoto ,  Yukio Watanabe ,  Hideto Sugawara

IPC分类号： H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/323

CPC分类号： H01S5/2231 ,  H01S5/0421 ,  H01S5/3054 ,  H01S5/32325 ,  Y10S148/095

摘要： There is disclosed a semiconductor layer which can emit a continuous laser beam in a visible wavelength range. The laser has an n-GaAs substrate. On this substrate, an n-InGaAlP cladding layer, an active layer, and p-InGaAlP cladding layers are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer is provided, defining a laser beam-guiding channel. A thin p-InGaAlP contact layer and a mesa-shaped, p-GaAs contact layer are formed on the top surface of the upper cladding layer. Two n-type semiconductive, current-blocking layers cover the slanted sides of the upper, mesa-shaped cladding layer and also the contact layer. They are made of the same n-GaAs compound semiconductor material as the substrate.

公开(公告)号：US08247794B2

公开(公告)日：2012-08-21

申请号：US12952758

申请日：2010-11-23

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L29/06

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/20

摘要： According to one embodiment, a nitride semiconductor device includes a substrate, an Alx1Ga1-x1N first buried layer, an InyAlzGa1-y-zN buried layer and an Alx2Ga1-x2N second buried layer. The substrate has protrusions formed in an in-plane direction on a first major surface, and a depression between adjacent ones of the protrusions. The first buried layer is formed on the depression and one of the protrusions. The InyAlzGa1-y-zN buried layer is formed on the first buried layer. The second buried layer is formed on the InyAlzGa1-y-zN buried layer. A portion of the first buried layer formed on the depression and a portion of the first buried layer formed on the one of the protrusions are not connected to each other. A portion of the InyAlzGa1-y-zN buried layer formed above the depression and a portion of the InyAlzGa1-y-zN buried layer formed above the one of the protrusions are connected to each other.

摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底，Al x Ga 1-x N 1第一掩埋层，In y Al z Ga 1-y-z N埋层和Al x Ga 1-x 2 N第二掩埋层。 基板具有在第一主表面上沿面内方向形成的突起，以及相邻突起之间的凹陷。 第一掩埋层形成在凹部和突起之一中。 InyAlzGa1-y-zN掩埋层形成在第一掩埋层上。 在InyAlzGa1-y-zN掩埋层上形成第二掩埋层。 形成在凹部上的第一掩埋层的一部分和形成在一个突起上的第一掩埋层的一部分没有彼此连接。 形成在凹部上方的InyAlzGa1-y-zN掩埋层的一部分和形成在上述一个突起上的InyAlzGa1-y-zN掩埋层的一部分彼此连接。

公开(公告)号：US08004065B2

公开(公告)日：2011-08-23

申请号：US12250767

申请日：2008-10-14

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/3203 ,  H01S2304/12

摘要： A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.

摘要翻译： 氮化物半导体包括：具有包括第一晶体极性表面和与第一晶体极性表面不同的第二晶体极性表面的主表面的基板; 以及设置在主表面上并具有单晶极性的单极性层。

公开(公告)号：US20080176353A1

公开(公告)日：2008-07-24

申请号：US11875777

申请日：2007-10-19

申请人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

发明人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/22 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

摘要翻译： 通过以下方法制造高亮度发光元件，该方法包括：在包括第一表面的GaP基板的第一表面和与第一表面相对的第二表面上形成发光层，并且具有小于第一区域的面积， 所述发光层发射允许通过所述GaP衬底的波长λ的光; 在所述GaP基板上形成多个侧表面，以相对于所述第二表面变窄的方式分别倾斜大致相同的角度; 并且在侧表面上形成高达0.1λ至3λ的多个凹陷和突起。

公开(公告)号：US20070086496A1

公开(公告)日：2007-04-19

申请号：US11357408

申请日：2006-02-21

申请人： Akira Tanaka ,  Chie Hongo ,  Yoshiyuki Harada ,  Hideto Sugawara ,  Masaaki Onomura ,  Hiroshi Katsuno

发明人： Akira Tanaka ,  Chie Hongo ,  Yoshiyuki Harada ,  Hideto Sugawara ,  Masaaki Onomura ,  Hiroshi Katsuno

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/3407 ,  H01L2924/00014

摘要： A semiconductor light emitting device comprises: a first cladding layer made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a well layer made of nitride semiconductor, the well layer being provided between the first barrier layer and the second barrier layer; and a second cladding layer provided on the active layer, the second cladding layer being made of nitride semiconductor of a second conductivity type. The first and second barrier layers and the well layer contain indium. At least one of the first barrier layer and the second barrier layer has a thickness of 30 nm or more.

摘要翻译： 一种半导体发光器件包括：由第一导电类型的氮化物半导体制成的第一覆层; 设置在所述第一包层上的有源层，所述有源层包括由氮化物半导体制成的第一势垒层，由氮化物半导体制成的第二阻挡层，以及由氮化物半导体制成的阱层，所述阱层设置在所述第一栅极 层和第二阻挡层; 以及设置在所述有源层上的第二覆层，所述第二覆层由第二导电类型的氮化物半导体制成。 第一和第二阻挡层和阱层含有铟。 第一阻挡层和第二阻挡层中的至少一个具有30nm以上的厚度。

公开(公告)号：US07180088B2

公开(公告)日：2007-02-20

申请号：US10731336

申请日：2003-12-09

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L29/06

CPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/32 ,  H01L33/387 ,  H01L2933/0016

摘要： Nitride based semiconductor light-emitting devices are provided with a sufficiently low contact resistance p-type electrode. The nitride based semiconductor light-emitting devices include a p-type GaN contact layer, protrusions with fine recesses (uneven portions) formed on a surface of the p-type GaN contact layer, and a p-type electrode formed on the uneven portions.

摘要翻译： 基于氮化物的半导体发光器件具有足够低的接触电阻p型电极。 氮化物类半导体发光器件包括p型GaN接触层，形成在p型GaN接触层的表面上的具有细小凹部（不平坦部分）的突起和形成在不平坦部分上的p型电极。

公开(公告)号：US20060223288A1

公开(公告)日：2006-10-05

申请号：US11439579

申请日：2006-05-24

申请人： Hideto Sugawara ,  Tsunenori Hiratsuka

发明人： Hideto Sugawara ,  Tsunenori Hiratsuka

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： H01L29/205 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/007

摘要： A group-III nitride semiconductor stack comprises a single-crystal substrate, a first group-III nitride layer formed on a principal surface of the single-crystal substrate, a graded low-temperature deposited layer formed on the group-III nitride layer and made of nitride in which group-III element composition is continuously changed, and a second group-III nitride layer formed on the graded low-temperature deposited layer.

公开(公告)号：US20050255615A1

公开(公告)日：2005-11-17

申请号：US11187072

申请日：2005-07-22

申请人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

发明人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

IPC分类号： H01L21/302 ,  H01L21/205 ,  H01L21/306 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L33/30 ,  H01L29/06

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/22 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

摘要翻译： 通过以下方法制造高亮度发光元件，该方法包括：在包括第一表面的GaP基板的第一表面和与第一表面相对的第二表面上形成发光层，并且具有小于第一区域的面积， 所述发光层发射允许通过所述GaP衬底的波长λ的光; 在所述GaP基板上形成多个侧表面，以相对于所述第二表面变窄的方式分别倾斜大致相同的角度; 并且在侧表面上形成高达0.1λ至3λ的多个凹陷和突起。