Wafer chuck for use in edge bevel removal of copper from silicon wafers
    72.
    发明授权
    Wafer chuck for use in edge bevel removal of copper from silicon wafers 有权
    用于从硅晶片去除铜的边缘斜面的晶片卡盘

    公开(公告)号:US06967174B1

    公开(公告)日:2005-11-22

    申请号:US10357999

    申请日:2003-02-03

    IPC分类号: H01L21/00 H01L21/302

    CPC分类号: H01L21/6708 H01L21/67051

    摘要: A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an alignment position when a robot arm places the wafer on the chuck. In this position, they guide the wafer into a proper alignment position with respect to the chuck. During rotation at a particular rotational speed, the alignment members move away from the wafer to allow liquid etchant to flow over the entire edge region of the wafer. At still higher rotational speeds, the wafer is clamped into position to prevent it from flying off the chuck. A clamping cam or other device (such as the alignment member itself) may provide the clamping.

    摘要翻译: 晶片卡盘包括对准部件,其允许半导体晶片在不使用单独的对准阶段的情况下适当地对准卡盘。 对准构件可以是凸轮,例如,附接到晶片卡盘的臂。 当机器人臂将晶片放置在卡盘上时,这些构件可以采取对准位置。 在这个位置上,它们将晶片引导到相对于卡盘的适当对准位置。 在以特定转速旋转期间,对准构件远离晶片移动以允许液体蚀刻剂流过晶片的整个边缘区域。 在更高的旋转速度下,晶片被夹紧就位以防止其从卡盘上飞走。 夹紧凸轮或其他装置(例如对准构件本身)可以提供夹紧。

    Uniform electroplating of thin metal seeded wafers using rotationally asymmetric variable anode correction
    73.
    发明授权
    Uniform electroplating of thin metal seeded wafers using rotationally asymmetric variable anode correction 有权
    使用旋转不对称可变阳极校正对薄金属种子晶片进行均匀电镀

    公开(公告)号:US06919010B1

    公开(公告)日:2005-07-19

    申请号:US10916374

    申请日:2004-08-10

    申请人: Steven T. Mayer

    发明人: Steven T. Mayer

    IPC分类号: C25D17/00 C25D17/12 C25D5/04

    摘要: A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. The current of a plating cell is provided from an azimuthally asymmetric anode, which is rotated with respect to the work piece (i.e., either or both of the work piece and the anode may be rotating). The azimuthal asymmetry provides a time-of-exposure correction to the current distribution reaching the work piece, whereby peripheral regions of the work piece see less current than central regions over the period of rotation. In some embodiments, the total current is distributed among a plurality of anodes in the plating cell in order to tailor the current distribution in the plating electrolyte over time. Focusing elements may be used to create “virtual anodes” in proximity to the plating surface of the work piece to further control the current distribution in the electrolyte during plating.

    摘要翻译: 将基本上均匀的金属层电镀在其上具有种子层的工件上。 电镀槽的电流由相对于工件旋转的方位不对称阳极(即,工件和阳极中的任一个或两者可以旋转)提供。 方位不对称性提供了到达工件的电流分布的曝光时间校正,从而在旋转周期内,工件的周边区域比中心区域看到更少的电流。 在一些实施例中,总电流分布在电镀单元中的多个阳极之间,以便随着时间的推移来调整电镀电解液中的电流分布。 可以使用聚焦元件在工件的电镀表面附近产生“虚拟阳极”,以进一步控制电镀期间电解液中的电流分布。

    Electroplanarization of large and small damascene features using diffusion barriers and electropolishing
    77.
    发明授权
    Electroplanarization of large and small damascene features using diffusion barriers and electropolishing 有权
    使用扩散屏障和电解抛光的大型和小型镶嵌特征的电平面化

    公开(公告)号:US06315883B1

    公开(公告)日:2001-11-13

    申请号:US09412837

    申请日:1999-10-05

    IPC分类号: C25D502

    摘要: A disclosed electroplanarization process involves “masking” certain regions of a wafer surface during electropolishing. The regions chosen for masking are features of relatively low aspect ratio (i.e., features that are wider than they are deep). The masking is accomplished with a material of relatively low ionic conductivity, which effectively slows or blocks transport of the metal ions produced during electropolishing. Examples of masking materials include concentrated phosphoric acid and certain polymers.

    摘要翻译: 所公开的电平面化方法涉及在电解抛光期间“掩蔽”晶片表面的某些区域。 选择用于掩蔽的区域是相对低的纵横比的特征(即,比它们更深的特征)。 掩蔽是用离子电导率相对较低的材料完成的,这有效地减慢或阻止了电解抛光过程中产生的金属离子的传输。 掩蔽材料的实例包括浓磷酸和某些聚合物。

    Edge bevel removal of copper from silicon wafers
    78.
    发明授权
    Edge bevel removal of copper from silicon wafers 有权
    从硅晶片去除铜的边缘斜面

    公开(公告)号:US06309981B1

    公开(公告)日:2001-10-30

    申请号:US09557668

    申请日:2000-04-25

    IPC分类号: H01L2100

    摘要: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems apply liquid etchant in a precise manner at the edge bevel region of the wafer under viscous flow conditions, so that the etchant is applied on to the front edge area and flows over the side edge and onto the back edge in a viscous manner. The etchant thus does not flow or splatter onto the active circuit region of the wafer.

    摘要翻译: 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 这些方法和系统在粘性​​流动条件下在晶片的边缘斜面区域以精确的方式施加液体腐蚀剂,使得蚀刻剂施加到前边缘区域上并且以粘性流过侧边缘并在后边缘上流动 方式。 因此,蚀刻剂不会流动或溅射到晶片的有源电路区域。

    Organic aerogel microspheres
    79.
    发明授权
    Organic aerogel microspheres 失效
    有机气凝胶微球

    公开(公告)号:US5908896A

    公开(公告)日:1999-06-01

    申请号:US586038

    申请日:1996-01-16

    摘要: Organic aerogel microspheres which can be used in capacitors, batteries, thermal insulation, adsorption/filtration media, and chromatographic packings, having diameters ranging from about 1 micron to about 3 mm. The microspheres can be pyrolyzed to form carbon aerogel microspheres. This method involves stirring the aqueous organic phase in mineral oil at elevated temperature until the dispersed organic phase polymerizes and forms nonsticky gel spheres. The size of the microspheres depends on the collision rate of the liquid droplets and the reaction rate of the monomers from which the aqueous solution is formed. The collision rate is governed by the volume ratio of the aqueous solution to the mineral oil and the shear rate, while the reaction rate is governed by the chemical formulation and the curing temperature.

    摘要翻译: 可用于电容器,电池,绝热,吸附/过滤介质和色谱填料的有机气凝胶微球,其直径范围为约1微米至约3毫米。 微球可以热解形成碳气凝胶微球。 该方法包括在升高的温度下在矿物油中搅拌含水有机相,直到分散的有机相聚合并形成不粘的凝胶球。 微球的大小取决于液滴的碰撞速率和形成水溶液的单体的反应速率。 碰撞率由水溶液与矿物油的体积比和剪切速率决定,反应速率由化学配方和固化温度决定。