公开(公告)号：USD858610S1

公开(公告)日：2019-09-03

申请号：US29619429

申请日：2017-09-29

申请人： Ming Fang

设计人： Ming Fang

公开(公告)号：US09444601B2

公开(公告)日：2016-09-13

申请号：US14364671

申请日：2012-04-18

申请人： Wei Zhang ,  Feng Wang ,  Dandan Guo ,  Ming Fang ,  Yao Wang

发明人： Wei Zhang ,  Feng Wang ,  Dandan Guo ,  Ming Fang ,  Yao Wang

IPC分类号： H04L5/00 ,  H04L25/06 ,  H04L1/18 ,  H04L29/08

CPC分类号： H04L5/0053 ,  H04L1/1812 ,  H04L1/1845 ,  H04L1/1874 ,  H04L1/1896 ,  H04L5/0007 ,  H04L25/067 ,  H04L67/2842

摘要： A method for Hybrid Automatic Repeat Request (HARQ) combination is disclosed. The method includes that: externally configured parameters relevant to HARQ combination are received, and an identifier ddr2switch of DDR2 switching is calculated to acquire addresses involved before and after the HARQ combination; it is determined, according to the parameters and the addresses involved before and after the HARQ combination, whether the HARQ combination is needed to be performed; and when it is determined that the HARQ combination is needed to be performed, data in a DDR2 are read and stored into a first data cache random access memory RAMA; and a HARQ combination calculation is performed, and the calculation result is stored into a second data cache random access memory RAMB. A device for HARQ combination is further disclosed. The technical solutions provided in the disclosure are based on a latest interference cancellation algorithm, greatly increase the success probability of decoding, saves the storage space of a DDR2 and improves the reading or writing efficiency.

摘要翻译： 公开了一种混合自动重传请求（HARQ）组合的方法。 该方法包括：接收与HARQ组合相关的外部配置参数，并且计算DDR2切换的标识符ddr2切换以获取HARQ组合之前和之后涉及的地址; 根据HARQ组合之前和之后的参数和地址确定是否需要执行HARQ组合; 并且当确定需要执行HARQ组合时，读取DDR2中的数据并将其存储到第一数据高速缓存随机存取存储器RAMA中; 并且执行HARQ组合计算，并且将计算结果存储到第二数据高速缓存随机存取存储器RAMB中。 还公开了一种用于HARQ组合的装置。 本公开提供的技术方案基于最新的干扰消除算法，大大提高了解码的成功概率，节省了DDR2的存储空间，提高了读写效率。

公开(公告)号：US09024408B2

公开(公告)日：2015-05-05

申请号：US12981383

申请日：2010-12-29

申请人： Ming Fang

发明人： Ming Fang

IPC分类号： H01L27/24 ,  B41J2/16 ,  B81C1/00 ,  G01P15/00

CPC分类号： H01L27/24 ,  B41J2/1601 ,  B41J2/1607 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1643 ,  B81C1/00246 ,  G01P15/00

摘要： A method of manufacturing double-sided semiconductor die by performing a first plurality of processes to a first side of a wafer and performing a second plurality of processes to a second side of the wafer, thereby forming at least a first semiconductor device on the first side of the wafer and at least a second semiconductor device on the second side of the wafer. The wafer may be cut to form a plurality of die having at least one semiconductor device on each side.

摘要翻译： 一种通过对晶片的第一面执行第一多个工艺并对晶片的第二侧执行第二多个工艺来制造双面半导体管芯的方法，从而在第一侧上形成至少第一半导体器件 以及晶片第二面上的至少第二半导体器件。 可以切割晶片以形成在每一侧具有至少一个半导体器件的多个裸片。

公开(公告)号：US20140376469A1

公开(公告)日：2014-12-25

申请号：US14364671

申请日：2012-04-18

申请人： Wei Zhang ,  Feng Wang ,  Dandan Guo ,  Ming Fang ,  Yao Wang

发明人： Wei Zhang ,  Feng Wang ,  Dandan Guo ,  Ming Fang ,  Yao Wang

IPC分类号： H04L5/00 ,  H04L1/18 ,  H04L29/08

CPC分类号： H04L5/0053 ,  H04L1/1812 ,  H04L1/1845 ,  H04L1/1874 ,  H04L1/1896 ,  H04L5/0007 ,  H04L25/067 ,  H04L67/2842

摘要： A method for Hybrid Automatic Repeat Request (HARQ) combination is disclosed. The method includes that: externally configured parameters relevant to HARQ combination are received, and an identifier ddr2switch of DDR2 switching is calculated to acquire addresses involved before and after the HARQ combination; it is determined, according to the parameters and the addresses involved before and after the HARQ combination, whether the HARQ combination is needed to be performed; and when it is determined that the HARQ combination is needed to be performed, data in a DDR2 are read and stored into a first data cache random access memory RAMA; and a HARQ combination calculation is performed, and the calculation result is stored into a second data cache random access memory RAMB. A device for HARQ combination is further disclosed. The technical solutions provided in the disclosure are based on a latest interference cancellation algorithm, greatly increase the success probability of decoding, saves the storage space of a DDR2 and improves the reading/writing efficiency.

摘要翻译： 公开了一种混合自动重传请求（HARQ）组合的方法。 该方法包括：接收与HARQ组合相关的外部配置参数，并且计算DDR2切换的标识符ddr2切换以获取HARQ组合之前和之后涉及的地址; 根据HARQ组合之前和之后的参数和地址确定是否需要执行HARQ组合; 并且当确定需要执行HARQ组合时，读取DDR2中的数据并将其存储到第一数据高速缓存随机存取存储器RAMA中; 并且执行HARQ组合计算，并且将计算结果存储到第二数据高速缓存随机存取存储器RAMB中。 还公开了一种用于HARQ组合的装置。 本公开提供的技术方案基于最新的干扰消除算法，大大提高了解码的成功概率，节省了DDR2的存储空间，提高了读写效率。

公开(公告)号：US20140232544A1

公开(公告)日：2014-08-21

申请号：US13840480

申请日：2013-03-15

申请人： Yannan Yang ,  Ming Fang ,  Yinghua Xu ,  Yunyue Yang ,  Ming-Ren Lian ,  Nen-Chin Liu ,  Hubert A. Patterson ,  Wing Kei Ho

发明人： Yannan Yang ,  Ming Fang ,  Yinghua Xu ,  Yunyue Yang ,  Ming-Ren Lian ,  Nen-Chin Liu ,  Hubert A. Patterson ,  Wing Kei Ho

IPC分类号： G08B13/24

CPC分类号： G08B13/2434

摘要： A security system tag. The security system tag includes a housing. The security system tag further includes an electronic article surveillance, EAS, element in which the EAS element is arranged to emit a detectable signal when introduced to an interrogation signal. The security system tag further includes a metal element in which the metal element is adapted to be heated. The security system tag further includes a first reversible adhesive proximate the metal element in which at least a portion of the first reversible adhesive de-bonds when thermally affected by the metal element when the metal element is heated.

摘要翻译： 安全系统标签。 安全系统标签包括壳体。 安全系统标签还包括电子物品监视EAS元件，其中EAS元件被布置成在被引入询问信号时发出可检测信号。 安全系统标签还包括其中金属元件适于被加热的金属元件。 所述安全系统标签进一步包括靠近所述金属元件的第一可逆粘合剂，其中当所述金属元件被加热时，所述第一可逆粘合剂的至少一部分在被所述金属元件热影响时解除粘合。

公开(公告)号：US07881594B2

公开(公告)日：2011-02-01

申请号：US12005862

申请日：2007-12-27

申请人： Ming Fang ,  Fuchao Wang

发明人： Ming Fang ,  Fuchao Wang

IPC分类号： F24H1/10

CPC分类号： B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/41 ,  Y10T29/49401 ,  Y10T29/49826

摘要： An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

摘要翻译： 集成半导体加热组件包括半导体衬底，形成在其中的腔室以及与腔室流体连通的出口，允许流体响应于加热室而离开腔室。 集成加热组件包括邻近腔室的第一加热元件，该第一加热元件可以产生高于选定阈值的热量，并将腔室中的流体朝向出口偏压。 第二加热元件邻近出口定位以产生高于所选阈值的热量，便于流体通过出口远离腔室的运动。 添加第二加热元件减少了每个加热元件发出的热量，并使吸热材料的厚度最小化到出口的开口端。 由于这样的材料是昂贵的，所以这降低了组件的制造成本和零售价格，同时提高了其效率和使用寿命。

公开(公告)号：US20080206919A1

公开(公告)日：2008-08-28

申请号：US12111061

申请日：2008-04-28

申请人： Fuchao Wang ,  Ming Fang

发明人： Fuchao Wang ,  Ming Fang

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  G02B3/00 ,  H01L31/02327 ,  H01L33/58

摘要： A semiconductor device includes a semiconductor material substrate, an opto-electric component formed on the substrate, and a first transparent layer formed on an upper surface of the substrate over the component, the layer having a planar upper surface with a cavity formed therein. The first transparent layer has a selected thickness and a first index of refraction. The semiconductor device further includes a lens having a second index of refraction, the lens being formed in the cavity by flowing a flowable dielectric over the substrate. An upper surface of the lens and the upper surface of the transparent layer may be coplanar, or alternatively, they may lie in separate planes. The semiconductor device may also include a second transparent layer formed over the first layer and lens, as a passivation layer.

摘要翻译： 半导体器件包括半导体材料基板，形成在基板上的光电部件和形成在该部件上的基板的上表面上的第一透明层，该层具有形成在其中的空腔的平面上表面。 第一透明层具有选定的厚度和第一折射率。 半导体器件还包括具有第二折射率的透镜，透镜通过使可流动电介质流过衬底而形成在空腔中。 透镜的上表面和透明层的上表面可以是共面的，或者可以位于分开的平面中。 半导体器件还可以包括形成在第一层和透镜上的第二透明层作为钝化层。

公开(公告)号：US07416980B2

公开(公告)日：2008-08-26

申请号：US11078611

申请日：2005-03-11

申请人： Ting Zhong ,  Valery Dubin ,  Ming Fang

发明人： Ting Zhong ,  Valery Dubin ,  Ming Fang

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  H01L21/7685 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01011 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2224/05099

摘要： Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer.

摘要翻译： 描述形成微电子结构的方法。 这些方法的实施例包括在衬底上形成阻挡层，其中阻挡层包含钼; 以及在阻挡层上形成无铅互连结构。

公开(公告)号：US07391112B2

公开(公告)日：2008-06-24

申请号：US11142971

申请日：2005-06-01

申请人： Jianxing Li ,  Ming Fang ,  Ting Zhong ,  Fay Hua ,  Kevin J. Lee

发明人： Jianxing Li ,  Ming Fang ,  Ting Zhong ,  Fay Hua ,  Kevin J. Lee

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1316 ,  H01L2224/13164 ,  H01L2224/13609 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/01028 ,  H01L2224/13099 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A structure including a substrate, a copper bump formed over the substrate, and a barrier layer comprising an alloy of at least one of iron and nickel, formed over the copper bump, and methods to make such a structure.

摘要翻译： 包括衬底，形成在衬底上的铜凸块，以及包含在铜凸块上形成的铁和镍中的至少一种的合金的阻挡层的结构以及制造这种结构的方法。

公开(公告)号：US07389013B2

公开(公告)日：2008-06-17

申请号：US10955891

申请日：2004-09-30

申请人： Ming Fang ,  Larry R. Tullos ,  Hai Ding

发明人： Ming Fang ,  Larry R. Tullos ,  Hai Ding

IPC分类号： G02B6/12 ,  G02B6/124 ,  G02B6/00

CPC分类号： G02B6/4204 ,  G02B6/4214

摘要： Connection between optical fibers and optical components within a semiconductor substrate. A lens is created at the front of a semiconductor substrate. A tapered hole is created in the back of the substrate exposing part or all of the surface of the lens. An optical component is formed or affixed at the front surface of the substrate. A volume of transparent adhesive is placed in the hole, followed by an optical fiber, which is thus coupled to the surface of the lens. A light guide is created on the front of the substrate overlying the lens to direct optical signals between the optical fiber inserted in the tapered hole and the optical component on the surface of the substrate.

摘要翻译： 半导体衬底内的光纤和光学部件之间的连接。 在半导体基板的前面形成透镜。 在基板的背面产生露出透镜的一部分或全部表面的锥形孔。 在基板的前表面上形成或固定光学部件。 将一定体积的透明粘合剂放置在孔中，随后是光纤，其由此耦合到透镜的表面。 在衬底的前面形成一个导光体，该导光体覆盖在透镜上，以将插入锥形孔中的光纤与基片表面上的光学部件之间的光信号引导。