公开(公告)号：US07901123B2

公开(公告)日：2011-03-08

申请号：US11805193

申请日：2007-05-22

申请人： Hitoshi Takeda ,  Tsukasa Tokida ,  Hiroyuki Ishida

发明人： Hitoshi Takeda ,  Tsukasa Tokida ,  Hiroyuki Ishida

IPC分类号： F21V7/04

CPC分类号： F21V19/001 ,  F21S41/147 ,  F21S41/32 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting module includes a semiconductor light emitting element disposed on a rectangular board, and a pair of plane-shaped electrode portions formed on the board and coupled to the semiconductor light emitting element. The pair of plane-shaped electrode portions is separated in first opposite directions, and a center of the semiconductor light emitting element is shifted from a center of the board in one of second opposite directions. End faces of the pair of plane-shaped electrode portions do not protrude in the one of the second opposite directions from an end face of the semiconductor light emitting element on a side facing toward the one of the second opposite directions. The first opposite directions are directions along which one pair of opposite sides of the board extend, and the second opposite directions are directions along which the other pair of opposite sides of the board extend.

摘要翻译： 发光模块包括设置在矩形板上的半导体发光元件和形成在板上并耦合到半导体发光元件的一对平面状电极部。 一对平面状电极部分在第一相反方向上分离，并且半导体发光元件的中心在第二相反方向之一上从板的中心偏移。 一对平面状电极部的端面从与半导体发光元件的朝向第二相反方向一侧的端面的第二相反方向的一方突出。 第一相反方向是板的一对相对侧延伸的方向，并且第二相对方向是板的另一对相对侧延伸的方向。

公开(公告)号：US07727873B2

公开(公告)日：2010-06-01

申请号：US11493542

申请日：2006-07-27

申请人： Hisao Sato ,  Hitoshi Takeda

发明人： Hisao Sato ,  Hitoshi Takeda

IPC分类号： H01L21/28

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06

摘要： An object of the present invention is to provide a method for producing a gallium nitride-based compound semiconductor multilayer structure useful for the production of a gallium nitride-based compound semiconductor light-emitting device which can ensure that the operating voltage is reduced, the light emission output is good and the light emission output is less changed due to aging.The inventive production method of a gallium nitride-based compound semiconductor multilayer structure comprises a substrate having thereon an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, the light-emitting layer being disposed between the n-type semiconductor layer and the p-type semiconductor layer, and the light-emitting layer having a multiple quantum well structure formed by alternately stacking a well layer and a barrier layer, wherein at least one well layer has a non-uniform thickness, at least a part of the barrier layer is grown at a higher temperature than the well layer, and the temperature difference between each growth temperature of the well layer, the barrier layer and the p-type semiconductor layer is adjusted to be in a specific range.

摘要翻译： 本发明的目的是提供一种用于生产氮化镓系化合物半导体发光装置的氮化镓系化合物半导体多层结构体的制造方法，该氮化镓系化合物半导体层叠结构能够确保工作电压降低，光 发射输出良好，光老化引起的发光量变化较小。 本发明的氮化镓系化合物半导体多层结构体的制造方法包括具有n型半导体层，发光层和p型半导体层的基板，所述发光层配置在n型半导体层之间， 型半导体层和p型半导体层，并且具有通过交替层叠阱层和阻挡层而形成的多量子阱结构的发光层，其中至少一个阱层具有不均匀的厚度，至少 阻挡层的一部分在比阱层高的温度下生长，将阱层，阻挡层和p型半导体层的各生长温度之间的温差调整到特定范围。

公开(公告)号：US07612363B2

公开(公告)日：2009-11-03

申请号：US11661757

申请日：2005-09-13

申请人： Hitoshi Takeda ,  Hisayuki Miki

发明人： Hitoshi Takeda ,  Hisayuki Miki

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/24 ,  H01L33/00

CPC分类号： H01L29/155 ,  B82Y20/00 ,  H01L24/73 ,  H01L29/2003 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An n-type Group III nitride semiconductor stacked layer structure including a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer containing n-type impurity atoms at a low concentration, a second n-type layer containing n-type impurity atoms at an average concentration smaller than that of the first n-type layer, the second n-type layer neighboring the layer containing n-type impurity atoms at a low concentration in the first n-type layer.

摘要翻译： 一种n型III族氮化物半导体层叠结构，包括：第一n型层，其包括含有高浓度的n型杂质原子的层和含有低浓度的n型杂质原子的层;第二n- 在第一n型层中平均浓度小于第一n型层的n型杂质原子的第二n型层与低浓度的n型杂质原子相邻。

公开(公告)号：US07501749B2

公开(公告)日：2009-03-10

申请号：US11262893

申请日：2005-11-01

申请人： Hitoshi Takeda ,  Osamu Kuboyama

发明人： Hitoshi Takeda ,  Osamu Kuboyama

IPC分类号： H01L33/00

CPC分类号： H01L33/504 ,  F21S41/00 ,  F21S43/14 ,  F21Y2115/10 ,  H01L33/58

摘要： A light-emitting device (2) including a light-emitting element (2a), a first phosphor (2b), and a second phosphor (2c). The light-emitting element (2a) emits light L1 having a wavelength range within the visible region. Upon receipt of the light L1, or light L3 originating from the second phosphor (2c), the first phosphor (2b) emits light L2 having a wavelength range, which differs from that of the first light L1 and the third light L3, but falls within the visible region. Upon receipt of a specific wavelength component (ultraviolet light, or the like) included in external light, the second phosphor (2c) generates the light L3 whose wavelength range is substantially the same as that of the light L1, thereby radiating the first phosphor (2b) with the light L3.

摘要翻译： 一种包括发光元件（2a），第一荧光体（2b）和第二荧光体（2c）的发光器件（2）。 发光元件（2a）发射波长范围在可见光区域内的光L1。 在接收到来自第二荧光体（2c）的光L1或光L3时，第一荧光体（2b）发射具有与第一光L1和第三光L3不同的波长范围的光L2，但是下降 在可见区域内。 在接收到外部光中包含的特定波长成分（紫外线等）的情况下，第二荧光体（2c）产生波长范围与光L1大致相同的光L3，从而照射第一荧光体 2b）与光L3。

公开(公告)号：US07456445B2

公开(公告)日：2008-11-25

申请号：US11597384

申请日：2005-05-20

申请人： Hitoshi Takeda ,  Syunji Horikawa

发明人： Hitoshi Takeda ,  Syunji Horikawa

IPC分类号： H01L29/20

CPC分类号： H01L33/325 ,  H01L33/305 ,  H01L33/32

摘要： A Group III nitride semiconductor light emitting device having a light emitting layer (6) bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized by comprising an n-type Group III nitride semiconductor layer (4) having germanium (Ge) added thereto and having a resistivity of 1×10−1 to 1×10−3 Ωcm. The invention provides a Ge-doped n-type Group III nitride semiconductor layer with low resistance and excellent flatness, in order to obtain a Group III nitride semiconductor light emitting device exhibiting low forward voltage and excellent light emitting efficiency.

摘要翻译： 一种III族氮化物半导体发光器件，其具有与由n型或p型III族氮化物半导体组成的晶体层结合的发光层（6），所述III族氮化物半导体发光器件的特征在于包括n 型（III）氮化物半导体层（4），其具有锗（Ge）并且具有1×10 -1至1×10 -3Ω电阻率的电阻率。 本发明提供了具有低电阻和优异的平坦度的Ge掺杂的n型III族氮化物半导体层，以便获得表现出低正向电压和优异的发光效率的III族氮化物半导体发光器件。

公开(公告)号：US07414524B2

公开(公告)日：2008-08-19

申请号：US11217200

申请日：2005-09-01

申请人： Masayasu Ito ,  Hitoshi Takeda

发明人： Masayasu Ito ,  Hitoshi Takeda

IPC分类号： B60Q1/26

CPC分类号： H05B33/0815 ,  B60Q1/28 ,  B60Q2400/30 ,  H05B33/0845

摘要： A higher voltage out of a battery voltage applied to an ignition voltage terminal or a control voltage applied to a control voltage terminal is supplied to a switching regulator via a diode. Then, a supply of current to an LED in the switching regulator is controlled in compliance with the control voltage while using an input voltage as energy. When a PWM signal is input into a control voltage terminal as the control voltage, transistors are turned off and on, whereby an instruction to turn on the LED in a dimmed lighting mode is issued to the switching regulator. Then, a current that is smaller than that supplied in a full lighting mode is supplied to the LED.

摘要翻译： 施加到点火电压端子的电池电压中的较高电压或施加到控制电压端子的控制电压通过二极管提供给开关稳压器。 然后，在使用输入电压作为能量的同时，根据控制电压来控制开关调节器中的LED电流供应。 当将PWM信号作为控制电压输入到控制电压端子时，晶体管被截止并导通，由此向开关调节器发出以浅灰色点亮模式接通LED的指令。 然后，将比在全照明模式下提供的电流小的电流提供给LED。

公开(公告)号：US07391046B2

公开(公告)日：2008-06-24

申请号：US11088909

申请日：2005-03-25

申请人： Yasuaki Tsutsumi ,  Hisayoshi Daicho ,  Hitoshi Takeda ,  Hidekazu Hayama ,  Hirokazu Yamaguchi

发明人： Yasuaki Tsutsumi ,  Hisayoshi Daicho ,  Hitoshi Takeda ,  Hidekazu Hayama ,  Hirokazu Yamaguchi

IPC分类号： H01L29/06

CPC分类号： C09K11/02 ,  C09K11/08 ,  H01L33/501 ,  H01L33/56 ,  H01L2224/73204 ,  H01L2933/0091 ,  H05B33/20

摘要： A light source module for generating light, including a semiconductor light-emitting element, nano-particles having a diameter smaller than half the wavelength of light generated by the light source module, a fluorescent substance for generating visible light in accordance with light generated by the semiconductor light-emitting element, and a binder formed stratiformly for covering a light-emitting surface of the semiconductor light-emitting element to hold the nano-particles and the fluorescent substance, wherein the refractive index of the nano-particles is higher than the refractive index of the binder.

摘要翻译： 一种用于产生包括半导体发光元件的光源的光源模块，其直径小于由光源模块产生的光的波长的一半的纳米颗粒，用于根据由所述光源模块产生的光产生可见光的荧光物质 半导体发光元件和层状物形成，用于覆盖半导体发光元件的发光面以保持纳米粒子和荧光物质，其中纳米粒子的折射率高于折射率 粘合剂的指数

公开(公告)号：US07385831B2

公开(公告)日：2008-06-10

申请号：US11144865

申请日：2005-06-03

申请人： Masayasu Ito ,  Kentarou Murakami ,  Hitoshi Takeda

发明人： Masayasu Ito ,  Kentarou Murakami ,  Hitoshi Takeda

IPC分类号： H02M3/335 ,  H02M7/122

CPC分类号： H05B33/0815

摘要： A power supply device includes: a regulator transformer; a primary switch for selectively supplying a current to the regulator transformer; a control circuit for reducing to 0, following each election made at the primary switch, the minimum value of a current output by the secondary side of the regulator transformer; and a coupling transformer for magnetically coupling routes along which a plurality of loads are connected in parallel to the secondary side of the regulator translator in a direction in which magnetic flux along each of the routes is offset by a current change. In this case, the control circuit increases the maximum value of the output current on the secondary side larger than twice of the target value of the current supplied to the loads.

摘要翻译： 电源装置包括：调压变压器; 用于选择性地向调压变压器供电的主开关; 在初级开关进行的每次选择之后，将减小为0的控制电路，由调节变压器的次级侧输出的电流的最小值; 以及用于磁耦合多个负载的路径的耦合变压器，沿着沿着每条路线的磁通量被电流变化偏移的方向并联连接到调节器转换器的次级侧的路径。 在这种情况下，控制电路将次级侧的输出电流的最大值增加到提供给负载的电流的目标值的两倍以上。

公开(公告)号：US07368885B2

公开(公告)日：2008-05-06

申请号：US11590021

申请日：2006-10-31

申请人： Hitoshi Takeda ,  Masayasu Ito

发明人： Hitoshi Takeda ,  Masayasu Ito

IPC分类号： H05B37/02

CPC分类号： H05B33/0815

摘要： A lighting controller for a lighting device for a vehicle includes a semiconductor light source; a power source for supplying electric power; and control circuitry for receiving the electric power from the power source and controlling a current supplied to the semiconductor light source. The control circuitry determines an amount of time the semiconductor light source is in a turned on state and an amount of time the semiconductor light source is in a turned off state. The control circuitry controls a value of the current supplied to the semiconductor light source based on both the determined amount of time the semiconductor light source is in a turned on state and the determined amount of time the semiconductor light source is in a turned off state. A method of controlling a lighting device for a vehicle includes receiving electric power from a power source; supplying a current to a semiconductor light source, determining an amount of time the semiconductor light source is in a turned on state and an amount of time the semiconductor light source is in a turned off state, and controlling a value of the current supplied to the semiconductor light source based on both the determined amount of time the semiconductor light source is in a turned on state and the determined amount of time the semiconductor light source is in a turned off state.

摘要翻译： 一种用于车辆照明装置的照明控制器，包括半导体光源; 用于供电的电源; 以及用于从电源接收电力并控制提供给半导体光源的电流的控制电路。 控制电路确定半导体光源处于导通状态的时间量和半导体光源处于关断状态的时间量。 控制电路基于半导体光源处于导通状态的所确定的时间量和半导体光源处于断开状态的确定的时间量来控制提供给半导体光源的电流的值。 一种控制车辆照明装置的方法包括从电源接收电力; 向半导体光源提供电流，确定半导体光源处于导通状态的时间量和半导体光源处于截止状态的时间量，以及控制提供给半导体光源的电流值 半导体光源基于确定的半导体光源处于导通状态的时间量以及所确定的半导体光源处于关闭状态的时间量。

公开(公告)号：US07309960B2

公开(公告)日：2007-12-18

申请号：US11090575

申请日：2005-03-24

申请人： Hitoshi Takeda ,  Masayasu Ito

发明人： Hitoshi Takeda ,  Masayasu Ito

IPC分类号： B60Q1/02

CPC分类号： B60Q1/486 ,  B60Q1/2603 ,  B60Q1/34 ,  B60Q2400/30

摘要： There is provided a vehicular lamp that can inform walkers or drivers in the other vehicles of the existence of the moving vehicle even where the circumference of the vehicle is bright by emitting a light amount larger than that of normal times when the circumference is bright. The vehicular lamp that is used for a vehicle includes a semiconductor light-emitting element, and a current controlling unit operable to increase an electric current flowing into the semiconductor light-emitting element according to a signal output from a sensor depending on a brightness of the circumference of the vehicle when the circumference of the vehicle is bright.

摘要翻译： 提供了一种车灯，其可以通过发射比周长明亮时的正常时间大的光量，即使在车辆的周边亮的情况下，也可以通知其他车辆中的步行者或驾驶员存在移动车辆的存在。 用于车辆的车灯包括半导体发光元件和电流控制单元，该电流控制单元可操作以根据从传感器输出的信号增加流入半导体发光元件的电流，这取决于 当车辆的圆周亮时，车辆的周长。