公开(公告)号：US07776659B2

公开(公告)日：2010-08-17

申请号：US12627941

申请日：2009-11-30

申请人： Hiroyuki Ogawa ,  Hideyuki Kojima

发明人： Hiroyuki Ogawa ,  Hideyuki Kojima

IPC分类号： H01L21/82

CPC分类号： H01L27/10894 ,  H01L27/105 ,  H01L27/10897 ,  H01L28/40

摘要： A method of manufacturing a semiconductor device having a first memory cell array region and a second memory cell array region, the method includes forming an active region on a surface layer of a semiconductor substrate, forming a first word line extending in a first direction on the gate insulating film in the first memory cell array region, and forming a second word line extending in a second direction crossing the first direction on the gate insulating film in the second memory cell array region, wherein the ion implantation into the active region is performed from a direction that is inclined from a direction vertical to the surface of the semiconductor substrate and is oblique with respect to both the first direction and the second direction.

摘要翻译： 一种制造具有第一存储单元阵列区域和第二存储单元阵列区域的半导体器件的方法，所述方法包括在半导体衬底的表面层上形成有源区，形成在第一方向上延伸的第一字线 栅极绝缘膜，并且形成在第二存储单元阵列区域中的栅极绝缘膜上沿与第一方向交叉的第二方向延伸的第二字线，其中从有源区域的离子注入到 从与半导体衬底的表面垂直的方向倾斜并相对于第一方向和第二方向倾斜的方向。

公开(公告)号：US20100171199A1

公开(公告)日：2010-07-08

申请号：US12665173

申请日：2008-07-14

申请人： Seiichi Uchida ,  Hiroyuki Ogawa

发明人： Seiichi Uchida ,  Hiroyuki Ogawa

IPC分类号： H01L29/02 ,  H01L21/04 ,  H01L21/027 ,  G03B27/54

CPC分类号： H01L29/78636 ,  G03F7/094 ,  G03F7/2022 ,  H01L27/1248 ,  H01L27/1288

摘要： The present invention provides a production method of a semiconductor device, involving formation of a flattening layer and easy process for layers formed on a semiconductor layer, and also provides a semiconductor device preferably produced by such a production method.The present invention further provides an exposure apparatus preferably used in such a production method. The present invention is a production method of a semiconductor device including a semiconductor layer and a flattening layer on a substrate, the flattening layer surrounding the semiconductor layer when the substrate is viewed in plane, the production method comprising the steps of: forming the semiconductor layer on the substrate; forming a photosensitive organic film on the semiconductor layer, the photosensitive organic film having a photosensitive wavelength range overlapping with an absorption wavelength range of the semiconductor layer, and forming a flattening layer by exposing the photosensitive organic film from a side of the substrate to light having a wavelength range corresponding to the photosensitive wavelength range of the photosensitive organic film, thereby developing the photosensitive organic film.

摘要翻译： 本发明提供了一种半导体器件的制造方法，其包括形成平坦化层和在半导体层上形成的层的容易处理，并且还提供优选地通过这种制造方法制造的半导体器件。 本发明还提供一种优选用于这种制造方法的曝光装置。 本发明是一种半导体器件的制造方法，该半导体器件在衬底上包括半导体层和平坦化层，当在平面上观察衬底时，围绕半导体层的平坦化层，其制造方法包括以下步骤：形成半导体层 在基材上 在所述半导体层上形成感光性有机膜，所述感光性有机膜的感光波长范围与所述半导体层的吸收波长范围重叠，以及通过将所述感光性有机膜从所述基板的一侧曝光而形成平坦化层， 与感光性有机膜的感光波长范围对应的波长范围，从而显影感光性有机膜。

公开(公告)号：US20100118237A1

公开(公告)日：2010-05-13

申请号：US12445153

申请日：2007-06-21

申请人： Hiromi Katoh ,  Hiroyuki Ogawa ,  Christopher Brown ,  Benjamin James Hadwen

发明人： Hiromi Katoh ,  Hiroyuki Ogawa ,  Christopher Brown ,  Benjamin James Hadwen

IPC分类号： G02F1/1333 ,  G02F1/133

CPC分类号： G02F1/136209 ,  G02F2001/13312 ,  G02F2202/10 ,  H01L31/02164

摘要： The present invention provides a liquid crystal display device capable of preventing the occurrence of dark currents in photodiodes. Thus, the liquid crystal display device includes a liquid crystal display panel 1 including an active matrix substrate and a backlight 13 for illuminating the liquid crystal display panel. The active matrix substrate 1 includes a photodiode 7 formed by a silicon film and a light shielding film 8 for shielding the photodiode 7 against illumination light from the backlight 13. The photodiode 7 and the light shielding film 8 are provided on a base substrate 5. The light shielding film 8 is formed by a semiconductor or an insulator. Preferably, the photodiode 7 is made of, for example, polycrystalline silicon or continuous grain silicon so as to have a characteristic that its sensitivity increases as the wavelength of light entering the photodiode becomes shorter. The light-shielding film 8 is formed by a silicon film, for example amorphous silicon, that reduces the transmittance of light entering the light shielding film as the wavelength of the light becomes shorter.

摘要翻译： 本发明提供能够防止光电二极管中的暗电流发生的液晶显示装置。 因此，液晶显示装置包括：液晶显示面板1，其包括有源矩阵基板和用于照亮液晶显示面板的背光源13。 有源矩阵基板1包括由硅膜形成的光电二极管7和用于屏蔽来自背光源13的照明光的光电二极管7的遮光膜8.光电二极管7和遮光膜8设置在基底基板5上。 遮光膜8由半导体或绝缘体形成。 优选地，光电二极管7例如由多晶硅或连续晶粒硅制成，以具有随着进入光电二极管的光的波长变短的灵敏度而增加的特性。 遮光膜8由硅膜（例如非晶硅）形成，其随着光的波长变短而降低进入遮光膜的光的透射率。

公开(公告)号：US07518252B2

公开(公告)日：2009-04-14

申请号：US11509605

申请日：2006-08-25

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L23/28 ,  H01L29/04

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.

摘要翻译： 薄膜半导体衬底包括绝缘衬底，形成在绝缘衬底上的非晶半导体薄膜和位于半导体薄膜上并指示用于结晶的参考位置的多个对准标记。

公开(公告)号：US07405141B2

公开(公告)日：2008-07-29

申请号：US11679724

申请日：2007-02-27

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： H01L21/268

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲振荡准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测， 并且当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置，以进行结晶。

公开(公告)号：US07306541B2

公开(公告)日：2007-12-11

申请号：US11223968

申请日：2005-09-13

申请人： Hiroyuki Ogawa

发明人： Hiroyuki Ogawa

IPC分类号： B60W10/04

CPC分类号： B60W30/18054 ,  B60W30/1884 ,  F02D11/105 ,  Y10T477/675 ,  Y10T477/679

摘要： An ECT_ECU executes a program including the step of identifying the drive mode, the step of determining whether the engine is in an idling state or not, the step of detecting the speed of an automatic transmission when not in an idling state, the step of detecting an accelerator press-down rate of change, the step of detecting vehicle speed, the step of calculating a target acceleration rate of change of the vehicle based on the drive mode, speed of the automatic transmission, accelerator press-down rate of change, and vehicle speed, and the step of calculating the target acceleration by integrating the calculated target acceleration rate of change with respect to time.

摘要翻译： ECT_ECU执行包括识别驱动模式的步骤，确定发动机是否处于怠速状态的步骤的程序，在不处于怠速状态时检测自动变速器的速度的步骤，检测步骤 加速器按压变化率，车速检测步骤，基于驾驶模式，自动变速器的速度，加速器按压变化率等计算车辆的目标加速度变化的步骤，以及 以及通过将计算出的目标加速变化率相对于时间积分来计算目标加速度的步骤。

公开(公告)号：US07247813B2

公开(公告)日：2007-07-24

申请号：US11246265

申请日：2005-10-11

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： B23K26/00 ,  H01L21/268

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulseoscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲激光准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测，并且 当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置以进行结晶。

公开(公告)号：US20060043258A1

公开(公告)日：2006-03-02

申请号：US11178562

申请日：2005-07-12

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

IPC分类号： G02B7/04

CPC分类号： G02B27/40 ,  B23K26/705 ,  G01J1/04 ,  G01J1/0411 ,  G01J1/0448 ,  G01J1/4257 ,  G02B7/36

摘要： A knife edge is disposed at a height corresponding to a section on which a sectional image (light intensity distribution) is picked up in such a manner as to intercept a part of the section of the laser light. The knife edge is irradiated with the laser light, and the sectional image of the laser light is enlarged with an image forming optics, and is picked up by a CCD. While picking up the sectional image in this manner, focusing of the image forming optics is performed. Next, the knife edge is retracted from the optical path of the laser light, the laser light is allowed to enter the CCD via the image forming optics, and the sectional image of the laser light is picked up.

摘要翻译： 刀刃设置在与截面图像（光强度分布）被拾取的部分相对应的高度处，以截取激光的一部分的一部分。 用激光照射刀刃，用成像光学元件放大激光的截面图像，并用CCD拾取。 以这种方式拾取截面图像时，执行成像光学元件的聚焦。 接下来，刀刃从激光的光路缩回，允许激光经由图像形成光学器件进入CCD，并且拾取激光的截面图像。

公开(公告)号：US20060027809A1

公开(公告)日：2006-02-09

申请号：US11194607

申请日：2005-08-02

申请人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L29/76 ,  H01L23/544 ,  H01L29/04

CPC分类号： H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L23/544 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/78675 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

摘要翻译： 促进在非晶或多晶膜中形成的再结晶区域的精确取向。 形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。 此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。 因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记 在结晶区域上的预定位置。

公开(公告)号：US20050217571A1

公开(公告)日：2005-10-06

申请号：US11087619

申请日：2005-03-24

申请人： Yukio Taniguchi ,  Masayuki Jyumonji ,  Hiroyuki Ogawa

发明人： Yukio Taniguchi ,  Masayuki Jyumonji ,  Hiroyuki Ogawa

IPC分类号： C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B13/24 ,  C30B28/02 ,  H01L21/00

CPC分类号： C30B13/24 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012 ,  Y10T117/1016

摘要： A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.

摘要翻译： 第一光调制元件通过调制入射的第一光束的强度，将具有第一光强度分布的光束的非单晶物质照射在非单晶物质上，由此熔化物质。 第二光调制元件通过调制入射的第二光束的强度，从而使该物质熔化，从而将具有第二光强分布的光束照射在该物质上。 照射系统使得具有第二光强分布的光束在物质通过具有第一光强度分布的光束的照射而部分熔融的时段内进入物质的熔融部分。