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    RADIO FREQUENCY FILTERING CIRCUITRY WITH RESONATORS
    71.
    发明申请
    RADIO FREQUENCY FILTERING CIRCUITRY WITH RESONATORS 有权
    无线频率滤波电路与谐振器

    公开(公告)号：US20160126929A1

    公开(公告)日：2016-05-05

    申请号：US14931165

    申请日：2015-11-03

    Applicant: RF Micro Devices, Inc.

    Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Marcus Granger-Jones ,  Nadim Khlat ,  Baker Scott

    IPC: H03H7/46

    CPC classification number: H03H7/463 ,  H01F17/0006

    Abstract: RF multiplexer circuitry includes a first signal path coupled between a first intermediate node and a common node, a second signal path coupled between a second intermediate node and the common node, first resonator circuitry coupled between the first signal path and ground, and second resonator circuitry coupled between the second signal path and ground. The first resonator circuitry is configured to allow signals within a first frequency pass band to pass between the first intermediate node and the common node, while attenuating signals outside of the first frequency pass band. The first resonator circuitry includes a first LC resonator. The second resonator circuitry is configured to allow signals within a second frequency pass band to pass between the second intermediate node and the common node, while attenuating signals outside of the second frequency pass band.

    Abstract translation: RF多路复用器电路包括耦合在第一中间节点和公共节点之间的第一信号路径，耦合在第二中间节点和公共节点之间的第二信号路径，耦合在第一信号路径和地之间的第一谐振器电路和第二谐振器电路 耦合在第二信号路径和地之间。 第一谐振器电路被配置为允许在第一频率通带内的信号在第一中间节点和公共节点之间通过，同时衰减第一频率通带之外的信号。 第一谐振器电路包括第一LC谐振器。 第二谐振器电路被配置为允许在第二频带内的信号在第二中间节点和公共节点之间通过，同时衰减第二频带之外的信号。

    LOW NOISE AMPLIFIER
    72.
    发明申请
    LOW NOISE AMPLIFIER 有权
    低噪音放大器

    公开(公告)号：US20160126906A1

    公开(公告)日：2016-05-05

    申请号：US14931448

    申请日：2015-11-03

    Applicant: RF Micro Devices, Inc.

    Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott ,  Ralph Christopher Nieri

    IPC: H03F3/193 ,  H03F1/26 ,  H03F1/02

    CPC classification number: H03F3/193 ,  H03F1/0261 ,  H03F1/223 ,  H03F1/26 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2200/492 ,  H04B1/1036 ,  H04B7/08 ,  H04B2001/1063 ,  H04W72/04

    Abstract: Circuitry includes a floating-body main field-effect transistor (FET) device, a body-contacted cascode FET device, and biasing circuitry coupled to the floating-body main FET device and the body-contacted cascode FET device. The floating-body main FET device includes a gate contact, a drain contact, and a source contact. The body-contacted cascode FET device includes a gate contact, a drain contact coupled to a supply voltage, and a source contact coupled to the drain contact of the floating-body main FET device and to a body region of the body-contacted cascode FET device. The biasing circuitry is coupled to the gate contact of the floating-body main FET device and the gate contact of the body-contacted cascode FET device and configured to provide biasing signals to the floating-body main FET device and the body-contacted cascode FET device such that a majority of the supply voltage is provided across the body-contacted cascode FET device.

    Abstract translation: 电路包括浮体主场效应晶体管（FET）器件，体接触共源共栅FET器件和耦合到浮体主FET器件和体接触共源共栅FET器件的偏置电路。 浮体主FET器件包括栅极接触，漏极接触和源极接触。 身体接触的共源共栅型FET器件包括栅极接触，耦合到电源电压的漏极接触以及耦合到浮体主FET器件的漏极接触和与身体接触的共源共栅FET的体区的源极接触 设备。 偏置电路耦合到浮体主FET器件的栅极接触和体接触共源共栅FET器件的栅极接触，并且被配置为向浮体主FET器件和体接触的共源共栅FET提供偏置信号 器件，使得大部分电源电压被提供在身体接触的共源共栅型FET器件上。

    High Q factor inductor structure
    75.
    发明授权
    High Q factor inductor structure 有权
    高Q因子电感结构

    公开(公告)号：US09196406B2

    公开(公告)日：2015-11-24

    申请号：US14099007

    申请日：2013-12-06

    Applicant: RF Micro Devices, Inc.

    Inventor： Dirk Robert Walter Leipold ,  Danny W. Chang ,  George Maxim ,  Ruediger Bauder

    IPC: H01F5/00 ,  H01F27/29 ,  H01F27/28 ,  H01F17/00

    CPC classification number: H01F5/003 ,  H01F17/0013 ,  H01F2017/002 ,  H01F2017/0073

    Abstract: The present disclosure provides a vertical inductor structure in which the magnetic field is closed such that the magnetic field of the vertical inductor structure is cancelled in the design direction outside the vertical inductor structure, yielding a small, or substantially zero, coupling factor of the vertical inductor structure. In one embodiment, several vertical inductor structures of the present disclosure can be placed in close proximity to create small resonant circuits and filter chains.

    Abstract translation: 本公开提供了垂直电感器结构，其中磁场被闭合，使得垂直电感器结构的磁场在垂直电感器结构外部的设计方向上消除，产生垂直的垂直电感器结构的小的或基本为零的耦合因子 电感结构。 在一个实施例中，本公开的几个垂直电感器结构可以紧邻地设置，以产生小的谐振电路和滤波器链。

    Body bias switching for an RF switch
    76.
    发明授权
    Body bias switching for an RF switch 有权
    RF开关的体偏置开关

    公开(公告)号：US09048836B2

    公开(公告)日：2015-06-02

    申请号：US14449594

    申请日：2014-08-01

    Applicant: RF Micro Devices, Inc.

    Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

    IPC: H03K17/56 ,  H03K17/30 ,  H03K17/60 ,  H03K17/687 ,  H03K17/16

    CPC classification number: H03K17/302 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03K17/165 ,  H03K17/30 ,  H03K17/60 ,  H03K17/687

    Abstract: Embodiments of radio frequency (RF) switching circuitry are disclosed that include (at least) a first switch and a body switching network operably associated with the first switch. The first switch has a first control contact, a first switch contact and a first body contact. The body switching network includes a first switchable path and a second switchable path. The first switchable path is connected between the first body contact and the first control contact of the first switch. Additionally, the second switchable path is connected between the first body contact and the first switch contact. Accordingly, the first body contact is can be appropriately biased by the switchable paths without requiring a resistor network and thus there is less loading. This maintains the Q factor of the RF switching circuitry.

    Abstract translation: 公开了射频（RF）切换电路的实施例，其包括（至少）与第一开关可操作地相关联的第一开关和主体切换网络。 第一开关具有第一控制触点，第一开关触点和第一体接触。 身体切换网络包括第一切换路径和第二切换路径。 第一可切换路径连接在第一开关的第一主体接点和第一控制触点之间。 此外，第二可切换路径连接在第一主体接触件和第一开关触头之间。 因此，可以通过可切换路径适当地偏置第一体接触，而不需要电阻网络，因此具有较少的负载。 这维持了RF开关电路的Q因子。

    HIGH EFFICIENCY RADIO FREQUENCY POWER AMPLIFIER CIRCUITRY WITH REDUCED DISTORTION
    78.
    发明申请
    HIGH EFFICIENCY RADIO FREQUENCY POWER AMPLIFIER CIRCUITRY WITH REDUCED DISTORTION 有权
    具有降低失真的高效无线电频率放大器电路

    公开(公告)号：US20150145604A1

    公开(公告)日：2015-05-28

    申请号：US14554774

    申请日：2014-11-26

    Applicant: RF Micro Devices, Inc.

    Inventor： Baker Scott ,  George Maxim ,  Dirk Robert Walter Leipold

    IPC: H03F1/02 ,  H03F3/21 ,  H03F3/19

    CPC classification number: H03G3/3036 ,  H03F1/0211 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/32 ,  H03F1/523 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/24 ,  H03F3/45179 ,  H03F3/45394 ,  H03F3/68 ,  H03F2200/324 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2201/3236 ,  H03G3/3042 ,  H04B1/0475 ,  H04B2001/0408 ,  H04B2001/0416 ,  H04B2001/0425

    Abstract: Radio frequency power amplifier circuitry includes an amplifier element, power supply modulation circuitry, and bias modulation circuitry. The amplifier element is configured to amplify an RF input signal using a modulated power supply signal and a modulated bias signal to produce an RF output signal. The power supply modulation circuitry is coupled to the amplifier element and configured to provide the modulated power supply signal. The bias modulation circuitry is coupled to the amplifier element and the power supply modulation circuitry and configured to receive the modulated power supply signal and provide the modulated bias signal. Notably, the modulated bias signal is a function of the modulated power supply signal such that the modulated bias signal is configured to maintain a small signal gain of the amplifier element and the phase of the RF input signal at a constant value as the modulated power supply signal changes.

    Abstract translation: 射频功率放大器电路包括放大器元件，电源调制电路和偏置调制电路。 放大器元件被配置为使用调制的电源信号和调制的偏置信号来放大RF输入信号以产生RF输出信号。 电源调制电路耦合到放大器元件并且被配置为提供调制电源信号。 偏置调制电路耦合到放大器元件和电源调制电路，并被配置为接收经调制的电源信号并提供经调制的偏置信号。 值得注意的是，调制偏置信号是调制电源信号的函数，使得调制偏置信号被配置为将放大器元件的小信号增益和RF输入信号的相位保持在恒定值，作为调制电源 信号变化。

    BODY BIAS SWITCHING FOR AN RF SWITCH
    79.
    发明申请
    BODY BIAS SWITCHING FOR AN RF SWITCH 有权
    用于RF开关的身体偏置开关

    公开(公告)号：US20150035582A1

    公开(公告)日：2015-02-05

    申请号：US14449594

    申请日：2014-08-01

    Applicant: RF Micro Devices, Inc.

    Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

    IPC: H03K17/30 ,  H03K17/687 ,  H03K17/16 ,  H03K17/60

    CPC classification number: H03K17/302 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03K17/165 ,  H03K17/30 ,  H03K17/60 ,  H03K17/687

    Abstract: Embodiments of radio frequency (RF) switching circuitry are disclosed that include (at least) a first switch and a body switching network operably associated with the first switch. The first switch has a first control contact, a first switch contact and a first body contact. The body switching network includes a first switchable path and a second switchable path. The first switchable path is connected between the first body contact and the first control contact of the first switch. Additionally, the second switchable path is connected between the first body contact and the first switch contact. Accordingly, the first body contact is can be appropriately biased by the switchable paths without requiring a resistor network and thus there is less loading. This maintains the Q factor of the RF switching circuitry.

    Abstract translation: 公开了射频（RF）切换电路的实施例，其包括（至少）与第一开关可操作地相关联的第一开关和主体切换网络。 第一开关具有第一控制触点，第一开关触点和第一体接触。 身体切换网络包括第一切换路径和第二切换路径。 第一可切换路径连接在第一开关的第一主体接点和第一控制触点之间。 此外，第二可切换路径连接在第一主体接触件和第一开关触头之间。 因此，可以通过可切换路径适当地偏置第一体接触，而不需要电阻网络，因此具有较少的负载。 这维持了RF开关电路的Q因子。

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