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    Display device
    76.
    发明授权
    Display device 有权

    公开(公告)号：US11796866B2

    公开(公告)日：2023-10-24

    申请号：US17949396

    申请日：2022-09-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroyuki Miyake ,  Makoto Kaneyasu

    IPC: H01L29/786 ,  H01L27/12 ,  G02F1/1343 ,  G09F9/30 ,  G09G3/36 ,  G02F1/1362 ,  G02F1/136 ,  G02F1/13357

    CPC classification number: G02F1/1343 ,  G02F1/136286 ,  G09F9/30 ,  G09G3/3648 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78696 ,  G02F1/13606 ,  G02F1/133602 ,  G09G2300/0439

    Abstract: A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided.
    The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.

    Light-emitting device
    77.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11741895B2

    公开(公告)日：2023-08-29

    申请号：US17388366

    申请日：2021-07-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiko Inoue ,  Hiroyuki Miyake

    IPC: G09G3/3233 ,  H01L27/12 ,  G09G3/3291

    CPC classification number: G09G3/3233 ,  H01L27/1225 ,  G09G3/3291 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/0233 ,  G09G2320/045

    Abstract: A light-emitting device in which variation in luminance of pixels is suppressed. A light-emitting device includes at least a transistor, a first wiring, a second wiring, a first switch, a second switch, a third switch, a fourth switch, a capacitor, and a light-emitting element. The first wiring and a first electrode of the capacitor are electrically connected to each other through the first switch. A second electrode of the capacitor is connected to a first terminal of the transistor. The second wiring and a gate of the transistor are electrically connected to each other through the second switch. The first electrode of the capacitor and the gate of the transistor are electrically connected to each other through the third switch. The first terminal of the transistor and an anode of the light-emitting element are electrically connected to each other through the fourth switch.

    Light-emitting device
    79.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11664391B2

    公开(公告)日：2023-05-30

    申请号：US16657243

    申请日：2019-10-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroyuki Miyake

    IPC: H01L27/12 ,  H01L29/786 ,  G09G3/3233 ,  H01L27/32

    CPC classification number: H01L27/1255 ,  G09G3/3233 ,  H01L27/1225 ,  H01L29/7869 ,  H01L27/3248 ,  H01L29/78648

    Abstract: To provide a light-emitting device in which variation in luminance among pixels caused by variation in threshold voltage of transistors can be suppressed. The light-emitting device includes a transistor including a first gate and a second gate overlapping with each other with a semiconductor film therebetween, a first capacitor maintaining a potential difference between one of a source and a drain of the transistor and the first gate, a second capacitor maintaining a potential difference between one of the source and the drain of the transistor and the second gate, a switch controlling conduction between the second gate of the transistor and a wiring, and a light-emitting element to which drain current of the transistor is supplied.

    Semiconductor device, light-emitting device, and electronic device
    80.
    发明授权
    Semiconductor device, light-emitting device, and electronic device 有权

    公开(公告)号：US11637129B2

    公开(公告)日：2023-04-25

    申请号：US17172213

    申请日：2021-02-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroyuki Miyake

    IPC: G09G3/3233 ,  G09G3/3275 ,  H01L27/06 ,  H01L33/62 ,  H01L27/12 ,  H01L27/32

    Abstract: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

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