公开(公告)号：US20130288483A1

公开(公告)日：2013-10-31

申请号：US13766238

申请日：2013-02-13

申请人： S.M. Reza Sadjadi ,  Dmitry Lubomirsky ,  Hamid Noorbakhsh ,  John Zheng Ye ,  David H. Quach ,  Sean S. Kang

发明人： S.M. Reza Sadjadi ,  Dmitry Lubomirsky ,  Hamid Noorbakhsh ,  John Zheng Ye ,  David H. Quach ,  Sean S. Kang

IPC分类号： H01L21/02 ,  H01L21/3065

CPC分类号： H01L22/20 ,  C23C14/22 ,  C23C16/44 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32605 ,  H01J37/32642 ,  H01J37/32697 ,  H01J2237/334 ,  H01L21/02104 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6833 ,  H01L21/68735

摘要： A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the phyisical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.

摘要翻译： 提供了一种动态可调工艺套件，具有动态可调工艺套件的处理室以及使用动态可调工艺套件处理衬底的方法。 动态可调工艺套件允许改变工艺套件的电气和热状态，而不改变工艺套件的植物结构，从而允许容易地改变等离子体性能，因此处理结果而不需要更换过程 套件 具有可动态调节的处理套件的处理室包括腔室主体，其包括被配置为电控制的导电侧壁的一部分，以及处理套件。 处理室包括可操作以控制处理套件的电气和热状态中的一个或两个的第一控制系统和可操作以控制侧壁部分的电气状态的第二控制系统。

公开(公告)号：US08409355B2

公开(公告)日：2013-04-02

申请号：US12109187

申请日：2008-04-24

申请人： Muhammad M. Rasheed ,  Teruki Iwashita ,  Hiroshi Otake ,  Yuki Koga ,  Kazutoshi Maehara ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky

发明人： Muhammad M. Rasheed ,  Teruki Iwashita ,  Hiroshi Otake ,  Yuki Koga ,  Kazutoshi Maehara ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/4585 ,  C23C16/4581 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/68735

摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.

摘要翻译： 本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。 在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。 在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在 从内缘朝向外缘的径向向外方向。

公开(公告)号：US20120145079A1

公开(公告)日：2012-06-14

申请号：US13161371

申请日：2011-06-15

申请人： Dmitry Lubomirsky ,  Jay D. Pinson, II ,  Kirby H. Floyd ,  Adib Khan ,  Shankar Venkataraman

发明人： Dmitry Lubomirsky ,  Jay D. Pinson, II ,  Kirby H. Floyd ,  Adib Khan ,  Shankar Venkataraman

IPC分类号： C23C16/458

CPC分类号： H01L21/67178 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67757

摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.

摘要翻译： 一种用于以批处理模式处理多个晶片的衬底处理室。 在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

公开(公告)号：US07989365B2

公开(公告)日：2011-08-02

申请号：US12543245

申请日：2009-08-18

申请人： Soonam Park ,  Soo Jeon ,  Toan Q. Tran ,  Jang-Gyoo Yang ,  Qiwei Liang ,  Dmitry Lubomirsky

发明人： Soonam Park ,  Soo Jeon ,  Toan Q. Tran ,  Jang-Gyoo Yang ,  Qiwei Liang ,  Dmitry Lubomirsky

IPC分类号： H01L21/316

CPC分类号： C23C16/4404 ,  C23C16/401 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  Y10S438/905

摘要： Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.

摘要翻译： 描述了调制远程等离子体系统的方法。 这些方法包括将含硅前体流入远程等离子体区域以将含硅膜沉积在远程等离子体系统的内表面上的步骤。 该方法在沉积过程中减少了与经调节的壁的反应，从而提高了沉积速率，改善了沉积均匀性，并降低了后续沉积时的缺陷率。

公开(公告)号：US07964040B2

公开(公告)日：2011-06-21

申请号：US12265641

申请日：2008-11-05

申请人： Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

发明人： Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

IPC分类号： B08B5/00

CPC分类号： H01L21/67069 ,  C23C16/4412 ,  H01J37/32834 ,  H01J37/32862 ,  Y10S134/902 ,  Y10T137/85978 ,  Y10T137/87571

摘要： An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.

摘要翻译： 描述了用于从半导体制造室清洗流体的排气前沿。 前排可以包括独立地联接到室的第一，第二和第三端口。 还描述了包括具有第一，第二和第三接口端口的衬底室的半导体制造系统。 该系统还可以包括具有第一，第二和第三端口的多端口前级线，其中第一前级线路端口耦合到第一接口端口，第二前级线路端口耦合到第二接口端口，并且第三前级端口 耦合到第三接口端口。 该系统还可以包括耦合到多端口前级管线的排气真空。

公开(公告)号：US20110045676A1

公开(公告)日：2011-02-24

申请号：US12543245

申请日：2009-08-18

申请人： Soonam Park ,  Soo Jeon ,  Toan Q. Tran ,  Jang-Gyoo Yang ,  Qiwei Liang ,  Dmitry Lubomirsky

发明人： Soonam Park ,  Soo Jeon ,  Toan Q. Tran ,  Jang-Gyoo Yang ,  Qiwei Liang ,  Dmitry Lubomirsky

IPC分类号： H01L21/314

CPC分类号： C23C16/4404 ,  C23C16/401 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  Y10S438/905

摘要： Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.

摘要翻译： 描述了调制远程等离子体系统的方法。 这些方法包括将含硅前体流入远程等离子体区域以将含硅膜沉积在远程等离子体系统的内表面上的步骤。 该方法在沉积过程中减少了与经调节的壁的反应，从而提高了沉积速率，改善了沉积均匀性，并降低了后续沉积时的缺陷率。

公开(公告)号：US07789993B2

公开(公告)日：2010-09-07

申请号：US11670662

申请日：2007-02-02

申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/321

摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

公开(公告)号：US20100041207A1

公开(公告)日：2010-02-18

申请号：US12193162

申请日：2008-08-18

申请人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

发明人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

IPC分类号： H01L21/762

CPC分类号： H01L21/76224 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.

摘要翻译： 将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。 该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分， 的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

公开(公告)号：US20090280650A1

公开(公告)日：2009-11-12

申请号：US12210982

申请日：2008-09-15

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

IPC分类号： H01L21/31 ,  B08B6/00 ,  C23F1/02 ,  H01L21/311

CPC分类号： B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/509 ,  H01J37/32449

摘要： Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.

摘要翻译： 描述了在衬底上沉积和固化电介质材料的方法。 该方法可以包括以下步骤：提供分隔成第一等离子体区域和第二等离子体区域的处理室，以及将衬底输送到处理室，其中衬底占据第二等离子体区域的一部分。 所述方法可以进一步包括在第一等离子体区域中形成第一等离子体，其中第一等离子体不直接与衬底接触，并将电介质材料沉积在衬底上以形成电介质层。 在电介质材料的沉积中使用由第一等离子体激发的一种或多种反应物。 所述方法可以包括通过在第二等离子体区域中形成第二等离子体来固化介电层，其中从电介质层去除一个或多个含碳物质。

公开(公告)号：US20090034148A1

公开(公告)日：2009-02-05

申请号：US11888327

申请日：2007-07-31

申请人： Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

发明人： Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

IPC分类号： H02N13/00

CPC分类号： H02N13/00 ,  H01L21/6833 ,  Y10T29/49117 ,  Y10T29/49885

摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

摘要翻译： 一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。 此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。 将电介质层抛光至规定的厚度。 在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。 在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。 在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。