公开(公告)号：US5747355A

公开(公告)日：1998-05-05

申请号：US455151

申请日：1995-05-31

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Takahiro Tsuji

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Takahiro Tsuji

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/786

CPC分类号： H01L29/78621 ,  H01L29/66757 ,  Y10S257/90

摘要： A method for producing a thin-film transistor (TFT) in which the gate electrode is offset from the source and drain without detriment to the characteristics of the device or to manufacturing yield, and a structure for such a TFT, are disclosed. A gate electrode is formed using a material capable of anodic oxidation, and a mask is formed on the gate electrode. Using a comparatively low voltage, a comparatively thick, porous anodic oxide film is formed on the sides of the gate electrode. The mask is then removed and using a comparatively high voltage a dense anodic oxide film is formed at least on the top of the gate electrode. Using the gate electrode having this anodic oxide on its top and sides as a mask, an impurity is introduced into the semiconductor film and an offset structure is obtained.

摘要翻译： 公开了一种制造薄膜晶体管（TFT）的方法，其中栅电极偏离源极和漏极而不损及器件的特性或制造成品率，以及这种TFT的结构。 使用能够进行阳极氧化的材料形成栅电极，在栅电极上形成掩模。 使用比较低的电压，在栅电极的侧面上形成比较厚的多孔阳极氧化膜。 然后去除掩模并且使用比较高的电压，至少在栅电极的顶部上形成致密的阳极氧化膜。 在其顶部和侧面使用具有该阳极氧化物的栅极作为掩模，将杂质引入到半导体膜中，并获得偏移结构。

公开(公告)号：US5619045A

公开(公告)日：1997-04-08

申请号：US677175

申请日：1996-07-09

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Takahiro Tsuji

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Takahiro Tsuji

IPC分类号： H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  Y10S257/90

摘要： A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided on the side and the upper face of said gate electrode, and the anodic oxide on the side of the gate electrode is formed thicker than the anodic oxide formed on the upper face. Also claimed is a process for fabricating the above thin film transistor improved in device characteristics and product yield, which comprises forming a gate electrode with an anodically oxidizable material having thereon a masking material, providing a relatively thick porous anodic oxide film on the side of the gate electrode by anodic oxidation effected under a relatively low voltage, then forming a dense anodic oxide film on at least the upper face of the gate electrode after removing the masking material, and introducing impurities into the semiconductor layer using the gate electrode portion having thereon the anodic oxide films as a mask.

摘要翻译： 一种薄膜晶体管，包括从源极和漏极偏移的栅电极，其包括在其上设置有栅电极的衬底，所述栅电极在设置在衬底上的有源区上制造，其中，构成栅电极的材料的阳极氧化物设置在侧 和栅电极的上表面，并且形成在上电极上的阳极氧化物形成在栅电极一侧的阳极氧化物。 还要求保护的是制造上述薄膜晶体管的方法，其改善了器件特性和产品产率，其包括用具有掩模材料的阳极氧化材料形成栅电极，在栅极侧提供相对较厚的多孔阳极氧化膜 通过阳极氧化在相对低的电压下进行栅极电极，然后在去除掩模材料之后在至少栅电极的上表面上形成致密的阳极氧化膜，并且使用其上具有栅极电极部分的栅极部分将杂质引入到半导体层中 阳极氧化膜作为掩模。

公开(公告)号：US5580800A

公开(公告)日：1996-12-03

申请号：US213060

申请日：1994-03-15

申请人： Hongyong Zhang ,  Yasuhiko Takemura ,  Hideki Uochi ,  Itaru Koyama ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Hongyong Zhang ,  Yasuhiko Takemura ,  Hideki Uochi ,  Itaru Koyama ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/49 ,  H01L21/306

CPC分类号： H01L21/02071 ,  H01L21/28079 ,  H01L21/32134 ,  H01L29/4908 ,  H01L29/66757 ,  Y10S148/051

摘要： A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb group element. Residues produced by the etching of the silicon-containing aluminum gate electrode are etched with a mixture solution of hydrofluoric acid, nitric acid and acetic acid. After contact holes have been formed in an interlayer insulating film, laser annealing is carried out, and metal electrodes are formed in the contact holes thereafter.

摘要翻译： 根据本发明的薄膜晶体管具有包括高纯度超过99.5％的低铝层的下电极和含有超过0.5％硅的上层铝的栅电极。 或者，其具有通过将IIIa族元素添加到IIIb族元素而制成的栅电极。 通过蚀刻含硅铝栅电极产生的残留物用氢氟酸，硝酸和乙酸的混合溶液进行蚀刻。 在层间绝缘膜中形成接触孔之后，进行激光退火，此后在接触孔中形成金属电极。

公开(公告)号：US5147469A

公开(公告)日：1992-09-15

申请号：US792248

申请日：1991-11-14

申请人： Toshihiro Kanzaki ,  Akira Sugawara ,  Isamu Amatsu ,  Kouichi Hatakeyama

发明人： Toshihiro Kanzaki ,  Akira Sugawara ,  Isamu Amatsu ,  Kouichi Hatakeyama

IPC分类号： C22C9/00 ,  C22C9/06 ,  C22F1/00 ,  C22F1/08 ,  H01L21/00 ,  H01L23/50

CPC分类号： H01L21/67144 ,  C22C9/00 ,  C22F1/08

摘要： Copper-based alloys suitable for use as materials in fabricating electric and electronic parts as typified by leadframes and having high strength and high electric conductivity can be produced by a process which comprises the steps of preparing a copper-based alloy consisting essentially of 0.01- 3.0 wt % Co and 0.01- 0.5 wt % P with the balance being Cu and incidental impurities, quenching said alloy from a temperature not lower than 750.degree. C. down to 450.degree. C. and below at a cooling rate of at least 1.degree. C./sec, heat treating the quenched alloy at a temperature of 480.degree.-600.degree. C. for 30-600 minutes, cold working said alloy for a working ratio of 20-80%, further heat treating the alloy at a temperature of 440.degree.-470.degree. C. for 30-600 minutes, and subsequently performing cold working for a working ratio of at least 50% and heat treatment at 380.degree. C. and below.

摘要翻译： 适合用作制造电子和电子部件的材料的铜基合金，以引线框架为代表，具有高强度和高导电性的方法可以通过包括以下步骤的方法制备：制备基本上由0.01-3.0组成的铜基合金 wt％Co和0.01-0.5wt％P，余量为Cu和偶然杂质，将所述合金从不低于750℃的温度淬火至450℃以下，冷却速度至少为1℃ ./sec，在480〜-600℃的温度下对淬火的合金进行热处理30-600分钟，冷加工所述合金的加工比为20-80％，在440℃的温度下进一步热处理合金 在-40〜600℃下进行30-600分钟，然后进行至少50％的加工率的冷加工和380℃以下的热处理。

公开(公告)号：US4877481A

公开(公告)日：1989-10-31

申请号：US200063

申请日：1988-05-27

申请人： Takeshi Fukuda ,  Shunpei Yamazaki ,  Akira Sugawara

发明人： Takeshi Fukuda ,  Shunpei Yamazaki ,  Akira Sugawara

IPC分类号： B23K26/18 ,  B41M5/24 ,  G02F1/1343 ,  G03F7/20 ,  H01L21/268 ,  H01L27/142 ,  H05K3/02 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

CPC分类号： B23K26/18 ,  B23K26/009 ,  B41M5/24 ,  G02F1/13439 ,  G03F7/2053 ,  H01L21/268 ,  H01L31/046 ,  H01L31/0463 ,  H05K3/027 ,  Y02E10/50

摘要： A laser scribing method is described. A laser beam is deprived of its tail which appears along a groove which is engraved by scribing. The scribing can be performed without forming protrusion along the edge of grooves engraved by the scribing. The depriving of the tail is accomplished by coating the film with a buffer film which is removed after the scribing.

摘要翻译： 描述了激光划线方法。 激光束被剥夺​​其沿着通过划线雕刻的凹槽出现的尾部。 可以进行划线，而不会沿着划线刻刻的凹槽的边缘形成突起。 通过用划片后去除的缓冲膜涂覆膜来实现尾部的剥夺。

公开(公告)号：US09284628B2

公开(公告)日：2016-03-15

申请号：US12671259

申请日：2009-05-21

申请人： Tomotsugu Aoyama ,  Akira Sugawara

发明人： Tomotsugu Aoyama ,  Akira Sugawara

IPC分类号： C22F1/08 ,  H01B1/02 ,  C22C9/02 ,  C22C9/06

CPC分类号： C22C9/02 ,  C22C9/06 ,  C22F1/08

摘要： A copper alloy sheet has a chemical composition containing 0.1 to 5 wt % of nickel, 0.1 to 5 wt % of tin, 0.01 to 0.5 wt % of phosphorus and the balance being copper and unavoidable impurities, and has a crystal orientation satisfying 2.9≦(f{220}+f{311)+f{420})/(0.27·f{220}+0.49·f{311}+0.49·f{420}) 4.0, assuming that the degree of orientation of a {hkl} crystal plane measured by the powder X-ray diffraction method on the rolled surface of the copper alloy sheet is f{hkl}.

摘要翻译： 铜合金板具有含有镍的0.1〜5重量％，锡0.1〜5重量％，磷0.01〜0.5重量％，铜和余量为不可避免的杂质的结晶取向的化学组成，其结晶取向为2.9＆lt; （f {220} + f {311）+ f {420}）/（0.27·f {220} + 0.49·f {311} + 0.49·f {420}）4.0，假设{ 通过粉末X射线衍射法在铜合金板的轧制表面上测得的hkl}晶面为f {hkl}。

公开(公告)号：US08871041B2

公开(公告)日：2014-10-28

申请号：US12624472

申请日：2009-11-24

申请人： Weilin Gao ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara

发明人： Weilin Gao ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara

IPC分类号： C22C9/06 ,  C22C9/00 ,  C22F1/08

CPC分类号： C22C9/00 ,  C22F1/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： A sheet material of a copper alloy has a chemical composition including 1.2 to 5.0 wt % of titanium, and the balance being copper and unavoidable impurities, the material having a mean crystal grain size of 5 to 25 μm and (maximum crystal grain size−minimum crystal grain size)/(mean crystal grain size) being 0.20 or less, and the material having a crystal orientation satisfying I{420}/I0{420}>1.0, assuming that the intensities of X-ray diffraction on the {420} crystal plane of the surface of the material and the standard powder of pure copper are I{420} and I0{420}, respectively.

摘要翻译： 铜合金的片材具有包含1.2〜5.0重量％的钛，余量为铜和不可避免的杂质的化学组成，该材料的平均结晶粒径为5〜25μm，（最大结晶粒径 - 最小值） 晶粒尺寸）/（平均晶粒尺寸）为0.20以下，并且具有满足I {420} / I0 {420}> 1.0的晶体取向的材料，假设{420}上的X射线衍射强度 材料表面的晶面和纯铜的标准粉末分别为I {420}和I0 {420}。

公开(公告)号：US07926543B2

公开(公告)日：2011-04-19

申请号：US11729221

申请日：2007-03-28

申请人： Akira Sugawara ,  Takayuki Takahashi

发明人： Akira Sugawara ,  Takayuki Takahashi

IPC分类号： B22D19/00

CPC分类号： B22D21/007 ,  B22D19/00 ,  H05K1/0306 ,  H05K3/101 ,  H05K2203/128

摘要： After a molten metal of aluminum or an aluminum alloy having a temperature, which is higher than the liquidus line temperature of aluminum or the aluminum alloy by 5 to 200° C., is injected into a mold, when the mold is cooled to solidify the molten metal, the molten metal injected into the mold is pressurized at a pressure of 1.0 to 100 kPa from a high-temperature side to a low-temperature side, and the mean cooling rate is set to be 5 to 100° C./minute while the mold is cooled from the liquidus line temperature to 450° C., the temperature gradient formed in the mold being set to be in the range of from 1° C./cm to 50° C./cm.

摘要翻译： 在铝或铝合金的熔融金属中，当将铝或铝合金的液相线温度高5〜200℃的温度注入模具时，当模具冷却固化时 熔融金属，注入模具中的熔融金属从高温侧至低温侧以1.0〜100kPa的压力加压，平均冷却速度设定为5〜100℃/分钟 当模具从液相线温度冷却到450℃时，模具中形成的温度梯度被设定在1℃/ cm到50℃/ cm的范围内。

公开(公告)号：USD607147S1

公开(公告)日：2009-12-29

申请号：US29339933

申请日：2009-07-10

申请人： Akira Sugawara

设计人： Akira Sugawara

公开(公告)号：US07569856B2

公开(公告)日：2009-08-04

申请号：US11078440

申请日：2005-03-14

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。